• Bulletin of the Korean Chemical Society
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• v.34 no.5
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• pp.1414-1420
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• 2013

Five novel spiro[benzo[c]fluorene-7,9'-fluorene] based dyes, including 5-[spiro[benzo[c]fluorene-7,9'-fluoren]-5-yl] spiro[benzo[c]fluorene-7,9'-fluorene] (7), 5-[spiro[benzo[c]fluorene-7,9'-fluoren]-9-yl] spiro[benzo[c]fluorene-7,9'-fluorene] (8), 5-[spiro[benzo[c]fluorene-7,9'-fluoren]-2'-yl] spiro[benzo[c]fluorene-7,9'-fluorene] (9), 9-[spiro[benzo[c]fluorene-7,9'-fluoren]-9-yl] spiro[benzo[c]fluorene-7,9'-fluorene] (10), and 2'-[spiro[benzo[c]-fluorene-7,9'-fluoren]-2'-yl] spiro[benzo[c]fluorene-7,9'-fluorene] (11) were successfully prepared from the corresponding halogen and boronic acid derivatives through the Suzuki coupling reaction, respectively. Chemical structures were confirmed by $^1H$ nuclear magnetic resonance (NMR), $^{13}C$ NMR, Fourier transforminfrared spectrscopy, mass spectroscopy, and elemental analysis. The thermal properties were determined by differential scanning calorimetry and thermal gravimetric analysis. The relationships between the optical and electrochemical properties and the combined positions between these dimers were systematically investigated using UV-vis, photoluminescence (PL), and photoelectron spectroscopy. These five dimers exhibited high fluorescent quantum yields and good morphological stability with high glass transition states > $174^{\circ}C$. Dimer 7 showed a UV absorbance peak at 353 nm, emission PL peak at 424 nm, and quantum efficiency of 0.62 in a cyclohexane solution.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.129-132
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• 2000

Perdeuterated hexaflouroacetyIacetonato-ytterbium $[Yb(HFA-D)_3]$ complexes were synthesized by the keto-en01 tautomerism reaction of $Yb(HFA-D)_3$ in methanol-$d_4$ in order to reduce the radiationless transition to the ligands. The luminescence properties of $Yb(HFA-D)_3$ complex were measured in the following anhydrous deuterated organic solvents ; Acetone-$d_6$, Methanol -$d_4$, THF-$d_6$, PO$(OHC_3)_3$ and DMSO-$d_6$. The intensity, lifetime and quantum efficiency of the luminescence in DMSO-$d_6$ were superior to those in other deuterated solvents. It was suggested that the anhydrous DMSO-$d_6$ might be the most appropriate solvent for the liquid laser material of $Yb(HFA-D)_3$ complex.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.640-643
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• 2001

Perdeuterated hexaflouroacetylacetonato-ytterbium [Yb(SOL-D)$_3$] complexes were synthesized by the keto-enol tautomerism reaction of Yb(SOL-H)$_3$in methanol-d$_4$in order to reduce the radiationless transition to the ligands. The luminescence properties of Yb(SOL-D)$_3$complex were measured in the following anhydrous deuterated organic solvents ; Methanol-d$_4$, THF-d$_{8}$, PO(O$CH_3$)$_3$and DMSO-d$_{6}$. The intensity, lifetime and quantum efficiency of the luminescence in DMSO-d$_{6}$ were superior to those in other deuterated solvents. It was suggested that the anhydrous DMSO-d$_{6}$ might be the most appropriate solvent for the liquid laser material of Yb(SOL-D)$_3$complex.complex.

• Journal of Magnetics
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• v.17 no.1
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• pp.13-18
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• 2012

Starting with Kubo's formula and using the projection operator technique introduced by Kawabata, EPR lineprofile function for a $Mn^{2+}$-doped wurtzite structure GaN semiconductor was derived as a function of temperature at a frequency of 9.49 GHz (X-band) in the presence of external electromagnetic field. The line-width is barely affected in the low-temperature region because there is no correlation between the resonance fields and the distribution function. At higher temperature the line-width increases with increasing temperature due to the interaction of electrons with acoustic phonons. Thus, the present technique is considered to be more convenient to explain the resonant system as in the case of other optical transition systems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.129-132
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• 2000

Perdeuterated hexafluoroacetylacetonato -ytterbium [$Yb (HFA -D)$_3$_3$] complexes were synthesized by the koto-enol tautomerism reaction of $Yb(HFA-H)_3$ in methanol-$d_4$, in order to reduce the radiationless transition to the ligands. The luminescence properties of $Yb(HFA-D)_3$ complex were measured in the following anhydrous deuterated organic solvents : Acetone-$d_6$, Methanol-$d_4$, THF-$d_8$, $PO(OC$H_3$)_3$ and DMSO-$d_6$. The intensity, lifetime and quantum efficiency of the luminescence in DMSO-$d_6$ were superior to those in other deuterated solvents. It was suggested that the anhydrous DMSO-d$_{6}$ might be the most appropriate solvent for the liquid laser material of $Yb(HFA-D)_3$ complex.x.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.788-796
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• 1996

$TiO_2$ films prepared by RF magnetron sputtering, electron beam evaporation, ion assisted deposition (IAD) and sol-gel method are prepared on c-Si substrate and vitreous silica substrate respectively. From the transmission spectra of $TiO_2$ films on vitreous silica substrate in the spectral region from 190 nm to 900 nm, k($\lambda$) of $TiO_2$ is obtained. Using k($\lambda$) in the interband transition region the coefficients of the quantum mechanical dispersion relation of an amorphous $TiO_2$ and hence n($\lambda$) including the optically opaque region of above fundamental transition energy are obtained. The spectroscopic ellipsometry spectra of $TiO_2$ films in the spectral region of 1.5-5.0eV are model analyzed to get the film packing density variation versus i) substrate material, ii) film thickness and iii) film growth technique. The complex refractive index change of these $TiO_2$ films versus water condensation is also studied. Film micro-structures by SE modelling results are compared with those by atomic force microscopy images and X-ray diffraction data.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.8
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• pp.24-30
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• 1998

A blue LED of $In_{x}Ga_{1-x}N$ multiple quantum well structure which had the blue emission spectrum of donor-acceptor pair transition generated form Si-Zn co-doped $In_{x}Ga_{1-x}N$ active layer, was fabricated. The $In_{x}Ga_{1-x}N$ MQW heterojunction LED structure was grown by MOCVD on the sapphire substrate with (0001) surface orientation at 800.deg. C. The fabricated LED exhibited forward cut-in voltage of 4~4.5V and reverse breakdown voltage of -13V. Its optical chracteristics showed that the center wavelength of peak emission occurred at 460nm and the optical intensity was increased linearly with respect to the injected electrical current above 5mA.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.15-19
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• 1998

Structural and optical properties of $In_xGa_{1-X}N$ as well as $In_{0.1}Ga_{0.9}N$/GaN single quantum we11 (SQW) grown on sapphire (0001) substrate with an based GaN using rf-plasma assisted MBE have been investigated. The quality of the InXGal.,N fdm was improved as the growth temperature increased. In PL measurements at low temperatures, the band edge emission peaks of $In_xGa_{1-X}N$ was shifted to red region as an indium cell and substrate temperature increased. For $In_{0.1}Ga_{0.9}N$/GaN SQW, the optical emission energy has blue shift about 15meV in PL peak, due to the confined energy level in the well region. And, the FWHM of the $In_{0.1}Ga_{0.9}N$/GaN SQW was larger than that of the bulk Ino,la.9N films. The broadening of FWHM can be explained either as non-uniformity of Indium composition or the potential fluctuation in the well region. Photoconductivity (PC) decay measurement reveals that the optical transition lifetimes of the SQW measured gradually increased with temperatures.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.293-294
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• 2011

It is known that semiconductor quantum-dot (QD) heterostructures have superior zero-dimensional quantum confinement, and they have been successfully applied to semiconductor laser diodes (QDLDs) for optical communication and infrared photodetectors (QDIPs) for thermal images [1]. The self-assembled QDs are normally formed at Stranski-Krastanov (S-K) growth mode utilizing the accumulated strain due to lattice-mismatch existing at heterointerfaces between QDs and cap layers. In order to increase the areal density and the number of stacks of QDs, recently, sub-monolayer (SML)-thick QDs (SQDs) with reduced strain were tried by equivalent thicknesses thinner than a wetting layer (WL) existing in conventional QDs (CQDs) by S-K mode. Despite that it is very different from CQDs with a well-defined WL, the SQD structure has been successfully applied to QDIP[2]. In this study, optical characteristics are investigated by using photoluminescence (PL) spectra taken from self-assembled InAs/GaAs QDs whose coverage are changing from submonolayer to a few monolayers. The QD structures were grown by using molecular beam epitaxy (MBE) on semi-insulating GaAs (100) substrates, and formed at a substrate temperature of 480$^{\circ}C$ followed by covering GaAs cap layer at 590$^{\circ}C$. We prepared six 10-period-stacked QD samples with different InAs coverages and thicknesses of GaAs spacer layers. In the QD coverage below WL thickness (~1.7 ML), the majority of SQDs with no WL coexisted with a small amount of CQDs with a WL, and multi-peak spectra changed to a single peak profile. A transition from SQDs to CQDs was found before and after a WL formation, and the sublevel of SQDs peaking at (1.32${\pm}$0.1) eV was much closer to the GaAs bandedge than that of CQDs (~1.2 eV). These revealed that QDs with no WL could be formed by near-ML coverage in InAs/GaAs system, and single-mode SQDs could be achieved by 1.5 ML just below WL that a strain field was entirely uniform.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.121-121
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• 2010

ZnO is a promising material for the application of high efficiency light emitting diodes with short wavelength region for its large bandgap energy of 3.37 eV which is similar to GaN (3.39 eV) at room temperature. The large exciton binding energy of 60 meV in ZnO provide provides higher efficiency of emission for optoelectronic device applications. Several ZnO/ZnMgO multiple quantum well (MQW) structures have been grown on various substrates such as sapphire, GaN, Si, and so on. However, the achievement of high quality ZnO/ZnMgO MQW structures has been somehow limited by the use of lattice-mismatched substrates. Therefore, we propose the optical properties of ZnO/ZnMgO multiple quantum well (MQW) structures with different well widths grown on lattice-matched ZnO substrates by molecular beam epitaxy. Photoluminescence (PL) spectra show MQW emissions at 3.387 and 3.369 eV for the ZnO/ZnMgO MQW samples with well widths of 2 and 5 nm, respectively, due to the quantum confinement effect. Time-resolved PL results show an efficient photo-generated carrier transfer from the barrier to the MQWs, which leads to an increased intensity ratio of the well to barrier emissions for the ZnO/ZnMgO MQW sample with the wider width. From the power-dependent PL spectra, we observed no PL peak shift of MQW emission in both samples, indicating a negligible built-in electric field effect in the ZnO/$Zn_{0.9}Mg_{0.1}O$ MQWs grown on lattice-matched ZnO substrates.