• Proceedings of the Optical Society of Korea Conference
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• 2003.02a
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• pp.38-39
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• 2003

The GaAs semiconductor whispering gallery modes, produced in the peripheral Rayleigh band region of W／sub Rayleigh／ ＝ (${\Phi}$／2)( 1-n／sub eff／n), exhibit novel properties of ultralow thresholds open to nano-ampere regime associated with photonic quantum ring (PQR) production (Fig 1 (a)). The PQR phenomena are associated with a photonic field-driven phase transition of quantum well(QW)-to-quantum wire (QWR) and hence the photonic (non-de Broglie) quantum corral effects, on the Rayleigh cavity confined carriers in dynamic steady state, occur as schematically shown in Fig 1. (omitted)

• Journal of IKEEE
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• v.23 no.2
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• pp.502-507
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• 2019

We investigated theoretically the quantum optical transition properties of qusi 2-Dinensinal Landau splitting system, in Si. We apply the Quantum Transport theory (QTR) to the system in the confinement of electrons by square well confinement potential. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on two transition processes, namely, the phonon emission transition process and the phonon absorption transition process. Through the analysis of this work, we found the increasing properties of QTLW and QTLS of Si with the temperature and the magnetic fields. We also found the dominant scattering processes are the phonon emission transition process.

• Applied Science and Convergence Technology
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• v.24 no.5
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• pp.167-171
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• 2015

Quantum-confined nanostructures open up additional perspectives in engineering materials with different electronic and optical properties. We have fabricated unique cation-exchanged CdS and CdS/CdSe quantum dots and measured their first four exciton transitions. We demonstrate that the relationship between electronic transitions and charge-carrier distributions is generalized for a broad range of core-shell nanostructures. These nanostructures can be used to further improve the performance in the fields of bio-imaging, light-emitting devices, photovoltaics, and quantum computing.

• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.7-12
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• 2013

We fabricated ZnO-ZnMgO single quantum well (SQW) samples having different well-widths by using the atomic layer deposition technique. The QW samples exhibit different optical transition behaviors with different QW widths. We confirm that when the well-width of 1.5 nm does not have a confined quantum energy level due to the Mg diffusion into the well caused by after-thermal treatment whereas the QWs wider than 1.5 nm show optical transitions between the confined energy levels.

• Bulletin of the Korean Chemical Society
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• v.16 no.2
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• pp.96-101
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• 1995

The optical properties of individual 3-to 14-micron diameter CdS crystalline spheres embedded in poly(methyl methacrylate) were studied using elastic scattering. The presence of well defined sharp peaks in the 550 to 600 nm elastic scattering spectra confirmed that each microcrystal acts as an optical cavity with cavity quality factors exceeding 104. Such natural resonator microcrystals should lead to greatly enhanced local field effects near the surface of CdS, quantum electrodynamic modification of optical transition rates of nearby species and altered photochemistry. Absorptive heating following high intensity laser irradiation was found to induce a transient washout of the high Q modes.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.332.1-332.1
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• 2016

Application of magnetic fields is important to characterize the carrier dynamics in semiconductor quantum structures. We performed photoluminescence (PL) measurements from an InGaP-AlInGaP single quantum well under pulsed magnetic fields to 50 T. The zero field interband PL transition energy matches well with the self-consistent Poisson-Schr?dinger equation. We attempted to analyze the dimensionality of the quantum well by using the diamagnetic shift of the magnetoexciton. The real quantum well has finite thickness that causes the quasi-two-dimensional behavior of the exciton diamagnetic shift. The PL intensity diminishes with increasing magnetic field because of the exciton motion in the presence of magnetic field.

• Journal of Powder Materials
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• v.27 no.2
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• pp.154-163
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• 2020

Fluorescent nanoparticles are characterized by their unique properties such as luminescence, optical transparency, and sensitivity to various chemical environments. For example, semiconductor nanocrystals (quantum dots), which are nanophosphors doped with transition metal or rare earth ions, can be classified as fluorescent nanoparticles. Tuning their optical and physico-chemical properties can be carried out by considering and taking advantage of nanoscale effects. For instance, quantum confinement causes a much higher fluorescence with nanoparticles than with their bulk counterparts. Recently, various types of fluorescent nanoparticles have been synthesized to extend their applications to other fields. In this study, State-of-the-art fluorescent nanoparticles are reviewed with emphasis on their analytical and anti-counterfeiting applications and synthesis processes. Moreover, the fundamental principles behind the exceptional properties of fluorescent nanoparticles are discussed.

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.329-330
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• 2007

Today some many types of 3D display are developed but that are not possibly multiviewer, multiview and full parallax. Our new research work uses the Quantum optic to develop 3D display. Quantum mechanically, we can think of the first photon making a virtual transition to the second state. If the second photon appears within the lifetime of that state, the absorption sequence to the third level can be completed. When the electron, located in the third state, shifts to the first state, that electron emits one visible photon. We controlled the two invisible lights to draw a pixel in volume.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.468-472
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• 1997

The effect of the surface state on the quantum efficiency of underlying GaAs/AlGaAs multi-quantum well(MQW) structures consisting of three GaAs quantum wells with different thickness, is studied by low temperature photoluminescence(PL). The structure was grown by molecular beam epitaxy(MBE) on (100) GaAs substrate. The thickness of three GaAs quantum wells was 3, 6 and 9 nm, respectively. The MQWs were placed apart from 50 nm AlGaAs edge-barriers including two inner-barriers with 15 nm in thickness. The samples used in this study were prepared with different growth temperatures. Particularly, the hydrogen passivation effect to the 9 nm quantum well located at near surface appeared much stronger than any others. Transition energy and optical gain related to the hydrogen passivation effects on the multi-quantum well structure was calculated by transfer matrix method.

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.390-395
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• 2007

We systematically investigated the effects of InAs coverage variation, two-step annealing and an asymmetric InGaAs quantum well (QW) on the structural and optical characteristics of InAs quantum dots (QDs) by using atomic force microscopy (AFM), transmission electron microscopy (TEM) and photoluminescence (PL) measurement. The transition of size distribution of InAs QDs from bimodal to multi-modal was noticeably observed with increasing InAs coverage. By means of two-step annealing, it is found that significant narrowing of the luminescence linewidth (from 132 to 31 meV) from the InAs QDs occurs together with about 150 meV blueshift, compared to as-grown InAs QDs. Finally, the InAs QDs emitting at longer wavelength of $1.3\;{\mu}m$ with narrow linewidth were grown by an asymmetric InGaAs QW. The excited-state transition for the InAs QDs with an asymmetric InGaAs QW was not noticeably observed due to the large energy-level spacing between the ground states and the first excited states. The InAs QDs with an asymmetric InGaAs QW will be promising for the device applications such as $1.3\;{\mu}m$ optical-fiber communication.