• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.1-7
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• 2008

In this work, a two dimensional, self-consistent Poisson-$Schr{\ddot{o}}dinger$ solver has been implemented to study C-V characteristics in nanometer scale MuGFETs with considering quantum effects. The quantum-mechanical effects on gate-channel capacitance for different device dimension and gate configurations of nanometer scale MuGFETs have been analyzed. It has been found that 4he gate-channel capacitance per unit gate area is increased as the device dimension decreases. For different gate configurations, the gate-channel capacitance is decreased with increase of effective gate number. Those resu1ts have been explained by the distribution profile of electron concentration in the silicon surface and inversion capacitance. The length of inversion-layer centroid has been calculated from inversion capacitance with device dimension and gate configurations.

• ETRI Journal
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• v.32 no.4
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• pp.530-539
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• 2010

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, quantum mechanical effects are expected to become more and more important. Accurate quantum transport simulators are required to explore the essential device physics as a design aid. However, because of the complexity of the analysis, it has been necessary to simulate the quantum mechanical model with high speed and accuracy. In this paper, the modeling of double gate MOSFET based on an adaptive neuro-fuzzy inference system (ANFIS) is presented. The ANFIS model reduces the computational time while keeping the accuracy of physics-based models, like non-equilibrium Green's function formalism. Finally, we import the ANFIS model into the circuit simulator software as a subcircuit. The results show that the compact model based on ANFIS is an efficient tool for the simulation of nanoscale circuits.

• ETRI Journal
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• v.44 no.3
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• pp.504-511
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• 2022

Monte Carlo simulations show that, as temperature increases, the average kinetic energy of channel electrons in a GaN transistor first decreases and then increases. According to the calculations, the relative energy change reaches 40%. This change leads to a reduced barrier height due to quantum coupling among the three-dimensional motions of channel electrons. Thus, an analysis and physical model of the gate leakage current that includes drift velocity is proposed. Numerical calculations show that the negative and positive temperature dependence of gate leakage currents decreases across the barrier as the field increases. They also demonstrate that source-drain voltage can have an effect of 1 to 2 orders of magnitude on the gate leakage current. The proposed model agrees well with the experimental results.

• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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• v.7 no.3
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• pp.291-300
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• 2017

Quantum-dot cellular automata(QCA) is a computing model designed to be similar to cellular automata, and an alternative technology for next generation using high performance and low power consumption. QCA is undergoing various studies with recent experimental results, and it is one of the paradigms of transistors that can solve device density and interconnection problems as nano-unit materials. An XOR gate is a gate that operates so that the result is true when either one of the logic is true. The proposed XOR gate consists of five layers. The first layer consists of OR gates, the third and fifth layers consist of AND gates, and the second and fourth layers are designed as passages in the middle. The half adder consists of an XOR gate and an AND gate. The proposed half adder is designed by adding two cells to the proposed XOR gate. The proposed half adder consists of fewer cells, total area, and clock than the conventional half adder.

• ETRI Journal
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• v.36 no.1
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• pp.89-98
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• 2014

The integration of digital circuits has a tight relation with the scaling down of silicon technology. The continuous scaling down of the feature size of CMOS devices enters the nanoscale, which results in such destructive effects as short channel effects. Consequently, efforts to replace silicon technology with efficient substitutes have been made. The carbon nanotube field-effect transistor (CNTFET) is one of the most promising replacements for this purpose because of its essential characteristics. Various digital CNTFET-based circuits, such as standard logic cells, have been designed and the results demonstrate improvements in the delay and energy consumption of these circuits. In this paper, a new CNTFET-based 5-input XOR gate based on a novel design method is proposed and simulated using the HSPICE tool based on the compact SPICE model for the CNTFET at the 32-nm technology node. The proposed method leads to improvements in performance and device count compared to the conventional CMOS-style design.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.6
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• pp.1027-1034
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• 2017

In this paper, we propose a new function embedding method that can measure mathematical projections of probability amplitude, probability, average expectation and matrix elements of stationary-state unit matrix at all control operation points of quantum gates. The function embedding method in this paper is to embed orthogonal normalization condition of probability amplitude for each control operating point into a binary scalar operator by using Dirac symbol and Kronecker delta symbol. Such a function embedding method is a very effective means of controlling the arithmetic power function of a unitary gate in a unitary transformation which expresses a quantum gate function as a tensor product of a single quantum. We present the results of evolutionary operation and projective measurement when we apply the proposed function embedding method to the ternary 2-qutrit cNOT gate and compare it with the existing methods.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.73-76
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• 2020

The physics-based compact gate leakage current noise models in nanoscale MOSFETs are developed in such a way that the models incorporate important physical effects and are suitable for circuit simulators, including QM (quantum-mechanical) effects. An emphasis on the trap-related parameters of noise models is laid to make the models adaptable to the variations in different process technologies and to make its parameters easily extractable from measured data. With the help of an accurate and generally applicable compact noise models, the compact noise models are successfully implemented into BSIM (Berkeley Short-channel IGFET Model) format. It is shown that the noise models have good agreement with measurements over the frequency, gate-source and drain-source bias ranges.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.691-694
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• 2003

Density gradient method is used to analyze the quantum effect in MOSFET, Quantization effect in the poly gate leads to a negative threshold voltage shift, which is opposed to the positive shift caused by quantization effect in the channel. Quantization effects in the poly gate are investigated using the density gradient method, and the impact on the short channel effect of double gate device is more significant.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.47 no.1
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• pp.29-34
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• 2010

This paper proposes a new parity-preserving reversible logic gate. It is a parity-preserving reversible logic gate, that is, the party of the outputs matches that of the inputs. In recent year, reversible logic gate has emerged as one of the important approaches for power optimization with its application in low CMOS design, quantum computing and nono-technology. We show that our proposed parity-preserving reversible logic gate is much better in terms of number of reversible logic gates, number of garbage-outputs and hardware complexity with compared ti the exiting counterpart.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.87-96
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• 2021

Quantum computers will be a game-changer in various fields, such as cryptography and new materials. Quantum computer is quite different from the classical computer by using quantum-mechanical phenomena, such as superposition, entanglement, and interference. The main components of a quantum computer can be divided into quantum-algorithm, quantum-classical control interface, and quantum processor. Universal quantum computing, which can be applied in various industries, is expected to have more than millions of qubits with high enough gate accuracy. Currently, It uses general-purpose electronic equipment, which is placed in a rack, at room temperature to make electronic signals that control qubits. However, implementing a universal quantum computer with a low error rate requires a lot of qubits demands the change of the current control system to be an integrated and miniaturized system that can be operated at low temperatures. In this study, we explore the fundamental units of the control system, describe the problems and alternatives of the current control system, and discuss a future quantum control system.