• Korean Journal of Metals and Materials
• /
• v.56 no.12
• /
• pp.900-909
• /
• 2018

A $ZnO/TiO_2$ photocatalyst decorated with PbS quantum dots (QDs) was synthesized to achieve high photocatalytic efficiency for the decomposition of dye in aqueous media. A $TiO_2$ porous layer, as a precursor photocatalyst, was fabricated using micro-arc oxidation, and exhibited irregular porous cells with anatase and rutile crystalline structures. Then, a ZnO-deposited $TiO_2$ catalyst was fabricated using a zinc acetate solution, and PbS QDs were uniformly deposited on the surface of the $ZnO/TiO_2$ photocatalyst using the successive ionic layer adsorption and reaction (SILAR) technique. For the PbS $QDs/ZnO/TiO_2$ photocatalyst, ZnO and PbS nanoparticles are uniformly precipitated on the $TiO_2$ surface. However, the diameters of the PbS particles were very fine, and their shape and distribution were relatively more homogeneous compared to the ZnO particles on the $TiO_2$ surface. The PbS QDs on the $TiO_2$ surface can induce changes in band gap energy due to the quantum confinement effect. The effective band gap of the PbS QDs was calculated to be 1.43 eV. To evaluate their photocatalytic properties, Aniline blue decomposition tests were performed. The presence of ZnO and PbS nanoparticles on the $TiO_2$ catalysts enhanced photoactivity by improving the absorption of visible light. The PbS $QDs/ZnO/TiO_2$ heterojunction photocatalyst showed a higher Aniline blue decomposition rate and photocatalytic activity, due to the quantum size effect of the PbS nanoparticles, and the more efficient transport of charge carriers.

• Journal of Integrative Natural Science
• /
• v.1 no.3
• /
• pp.250-253
• /
• 2008

New issues arise as to surface characterization, quantification and interface formation. Surface and interface control of CdSe nanocrystal systems, one of the most studied and useful nanostructures. Semiconductor quantum dots (QDs) have been the subject of much interest for both fundamental reseach and technical applications in recent years, due mainly to their strong size dependent properties and excellent chemical processibility. In this dissertation, the synthesis of CdSe quantum dots were synthesized by pyrolysis of high-temperature organometallic reagents. In order to modify the size and quality of quantum dots, we controlled the growth temperature and the relative amount of precursors to be injected into the coordinating solvent. Moreover, an effective surface passivation of monodisperse nanocrystals was achieved by overcoating them with a higher-band-gap material. Synthesized CdSe quantum dots were studied to evaluate the optical, electronic and structural properties using UV-absorption, and photoluminescence measurement.

• Korean Journal of Materials Research
• /
• v.31 no.1
• /
• pp.16-22
• /
• 2021

In this study, quantum dot-sensitized solar cells (QDSSC) using CdSe/ZnS quantum dots (QD) of various sizes with green, yellow, and red colors are developed. Quantum dots, depending their different sizes, have advantages of absorbing light of various wavelengths. This absorption of light of various wavelengths increases the photocurrent production of solar cells. The absorption and emission peaks and excellent photochemical properties of the synthesized quantum dots are confirmed through UV-visible and photoluminescence (PL) analysis. In TEM analysis, the average sizes of individual green, yellow, and red quantum dots are shown to be 5 nm, 6 nm, and 8 nm. The J-V curves of QDSSC for one type of QD show a current density of 1.7 mA/㎠ and an open-circuit voltage of 0.49 V, while QDSSC using three type of QDs shows improved electrical characteristics of 5.52 mA/㎠ and 0.52 V. As a result, the photoelectric conversion efficiency of QDSSC using one type of QD is as low as 0.53 %, but QDSSC using three type of QDs has a measured efficiency of 1.4 %.

• Journal of the Korean Magnetic Resonance Society
• /
• v.23 no.2
• /
• pp.51-55
• /
• 2019

Quantum dot (QD) is an emerging novel nanomaterial that has wide applicability and superior functionality with relatively low cost. Nuclear magnetic resonance (NMR) spectroscopy has been contributed to elucidate various features of QDs and to improve their overall performance. In particular, NMR spectroscopy becomes an essential analytical tool to monitor and analyze organic ligands on the QD surface. In the present mini-review, application of NMR spectroscopy as a superb methodology to appreciate organic ligands is discussed. In addition, it was recently noted that ligands exert rather greater influence on diverse features of QDs than our initial anticipation, for which contribution of NMR spectroscopy is briefly reviewed.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2003.12a
• /
• pp.109-116
• /
• 2003

Amorphous GaN Quantum dots(a-GaN QDs) with particle diameters less than bohr radius(~11nm) were successfully fabricated at room temperature by a laser ablation of high densified GaN target. Transmission electron microscopy, SAED diffraction pattern and X-ray photoelectron spectroscopy confirmed the presence of a-GaN QDs with particle size of 7.9, 6.9, 4.4nm under the Ar gas pressures of 50, 100 and 200 Pa, respectively. The room temperature PL and absorbance spectra showed a strong band emission centered at 3.9 eV in a-GaN QDs made under the gas pressures of 100 and 200 Pa, which is nearly 0.5eV blueshifted with respect to the bulk crystal band gap.

• Korean Journal of Materials Research
• /
• v.18 no.7
• /
• pp.379-383
• /
• 2008

We report on the light-emitting diode (LED) characteristics of core-shell CdSe/ZnS nanocrystal quantum dots (QDs) embedded in $TiO_2$thin films on a Si substrate. A simple p-n junction could be formed when nanocrystal QDs on a p-type Si substrate were embedded in ${\sim}5\;nm$ thick $TiO_2$ thin film, which is inherently an n-type semiconductor. The $TiO_2$ thin film was deposited over QDs at $200^{\circ}C$ using plasma-enhanced metallorganic chemical vapor deposition. The LED structure of $TiO_2$/QDs/Si showed typical p-n diode currentvoltage and electroluminescence characteristics. The colloidal core-shell CdSe/ZnS QDs were synthesized via pyrolysis in the range of $220-280^{\circ}C$. Pyrolysis conditions were optimized through systematic studies as functions of synthesis temperature, reaction time, and surfactant amount.

• Applied Chemistry for Engineering
• /
• v.33 no.5
• /
• pp.451-458
• /
• 2022

Semiconductor quantum dots (QDs) are optical probes with excellent fluorescence properties. Therefore, they have been applied to various bio-medical imaging techniques and biosensors. Due to the unique optical characteristics of wide absorption and narrow fluorescence energy bands, multiple types of signals can be generated by the combination of fluorescence wavelengths from different QDs, which enables the simultaneous detection of more than two biomarkers. In this review, the advantages and applications of QDs and QD nanobeads (QBs) in multiple biomarker assays were described, and new developments or improvements in multiplexed biomarker detection techniques were summarized. In particular, recent reports were summarized, focusing on the design strategies in immunoassay construction and signal transducing materials for fluorescence-linked immunosorbent assays using QDs and immunochromatographic assays using QBs. New detection platforms will be developed for early diagnosis of diseases and other fields if multiplexed detection technologies of excellent accuracy and sensitivity are combined with artificial intelligence algorithms.

• Journal of the Korean Vacuum Society
• /
• v.21 no.6
• /
• pp.342-347
• /
• 2012

The optical properties of InAs quantum dots (QDs) grown on a GaAs substrates by migration enhanced molecular beam epitaxy method have been investigated by using photoluminescence (PL) and time-resolved PL measurements. The luminescence properties of InAs/GaAs QDs have been studied as functions of temperature, excitation laser power, and emission wavelength. The PL peak of InAs QDs capped with $In_{0.15}Ga_{0.85}As$ layer (QD2) measured at 10 K is redshifted about 80 nm compared with that of InAs QDs with no InGaAs layer (QD1). This redshift of QD2 is attributed to the increase in dot size due to the diffusion of In from the InGaAs capping layer. The PL decay times of QD1 and QD2 at 10 K are 1.12 and 1.00 ns taken at the PL peak of 1,117 and 1,197 nm, respectively. The reduced decay time of QD2 can be explained by the improved carrier confinement and enhanced wave function overlap due to increased QD size. The PL decay times for both QD1 and QD2 are independent on the emission wavelength, indicating the uniformity of dot size.

• Korean Journal of Materials Research
• /
• v.17 no.7
• /
• pp.390-395
• /
• 2007

We systematically investigated the effects of InAs coverage variation, two-step annealing and an asymmetric InGaAs quantum well (QW) on the structural and optical characteristics of InAs quantum dots (QDs) by using atomic force microscopy (AFM), transmission electron microscopy (TEM) and photoluminescence (PL) measurement. The transition of size distribution of InAs QDs from bimodal to multi-modal was noticeably observed with increasing InAs coverage. By means of two-step annealing, it is found that significant narrowing of the luminescence linewidth (from 132 to 31 meV) from the InAs QDs occurs together with about 150 meV blueshift, compared to as-grown InAs QDs. Finally, the InAs QDs emitting at longer wavelength of $1.3\;{\mu}m$ with narrow linewidth were grown by an asymmetric InGaAs QW. The excited-state transition for the InAs QDs with an asymmetric InGaAs QW was not noticeably observed due to the large energy-level spacing between the ground states and the first excited states. The InAs QDs with an asymmetric InGaAs QW will be promising for the device applications such as $1.3\;{\mu}m$ optical-fiber communication.

• Applied Chemistry for Engineering
• /
• v.22 no.3
• /
• pp.328-331
• /
• 2011

ZnSe quantum dots (QDs) were prepared by employing water-containing Dioctyl sodium sulfosuccinate (AOT) reversed micelles (microemulsions) and the silica-encapsulated ZnSe QDs were obtained by a direct injection of tetraethyl orthosilicate (TEOS) into the microemulsion system. When the QDs were coated by silica, well-defined spherical shapes were formed and the average size of the QDs was near 7 nm. In addition, the photoluminescence (PL) efficiency of the QDs was reduced from 8.0 to 1.1% as they were encapsulated by silica. However, the solid layers of the silica-encapsulated ZnSe QDs on gold surfaces showed the excellent photostability. In particular, they are cadmium free and thus, less toxic. Moreover, the present method does not require a hot reaction temperature or extremely toxic H2Se gas as a Se precursor. Accordingly, the method can be a safer and more economical process for producing silica-encapsulated ZnSe QDs, which may be a potential media for biosensors.