• Korean Journal of Materials Research
• /
• v.19 no.7
• /
• pp.356-361
• /
• 2009

The optical characterization of self-assembled InAs/AlAs Quantum Dots(QD) grown by MBE(Molecular Beam Epitaxy) was investigated by using Photoluminescence(PL) spectroscopy. The influence of thin AlAs barrier on QDs were carried out by utilizing a pumping beam that has lower energy than that of the AlAs barrier. This provides the evidence for the tunneling of carriers from the GaAs layer, which results in a strong QD intensity compared to the GaAs at the 16 K PL spectrum. The presence of two QDs signals were found to be associated with the ground-states transitions from QDs with a bimodal size distribution made by the excitation power-dependent PL. From the temperature-dependent PL, the rapid red shift of the peak emission that was related to the QD2 from the increasing temperature was attributed to the coherence between the QDs of bimodal size distribution. A red shift of the PL peak of QDs emission and the reduction of the FWHM(Full Width at Half Maximum) were observed when the annealing temperatures ranged from 500 $^{\circ}C$ to 750 $^{\circ}C$, which indicates that the interdiffusion between the dots and the capping layer was caused by an improvement in the uniformity size of the QDs.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.215-215
• /
• 2014

Red color light emitting diodes (LEDs) were fabricated using CdSe/CdZnS quantum dots (QDs). During the device fabrication process, oxygen plasma treatment on the ITO surface was performed to improve the interfacial contact between ITO anode and the hole injection layer. CdSe/CdZnS quantum dots were cross-linked to remove their surrounded organic surfactants. The device shows red emission at 622 nm, which is consistent with the dimension of the QDs (band gap=1.99 eV). The luminance shows 6026% improvement compared with that of LEDs fabricated without oxygen plasma treatment and quantum dots cross-linking process. This approach would be useful for the fabrication of high-performance QLEDs with ITO electrode and PEDOT:PSS hole injection layers.

• Journal of the Korean Vacuum Society
• /
• v.8 no.4A
• /
• pp.450-455
• /
• 1999

We present Photoluminescence (PL) and Atomic Force Microscopy (AFM) image on InAs quantum dots (QDs) having different size which grown by Molecualr Beam Epitaxy (MBE). For different size QDs, analysis of the AFM profiles show that the density of QDs was the maximum value $(1.1\times10^{11}\textrm{/cm}^2)$ at 2.0 ML. In the spectra of QDs, it is found that the peak energy decreases with increasing dot size due to the effect of quantum confinement. Temperature dependence of PL intensities show that the PL is quenching and Red shift as the temperature increase. The FWHM range of 20K~180K is narrowing with increasing temperature. When temperature is over 180K, the line-width starts to in creases with increasing temperature. At last, temperature dependence of the integrated intensities were fit using the Arrehenius-type function for the activation energy. Fit value of the activation energy was increased with increasing QDs-size.

• Bulletin of the Korean Chemical Society
• /
• v.35 no.2
• /
• pp.457-465
• /
• 2014

Size-controlled lead sulfide (PbS) quantum dots were synthesized by the typical hot injection method using oleic acid (OA) as the stabilizing agent. Subsequently, the ligand exchange reaction between OA and thioacetic acid (TAA) was employed to obtain TAA-capped PbS quantum dots (PbS-TAA QDs). The condensation reaction of the TAA ligands on the surfaces of the QDs enhanced the conductivity of the PbS-TAA QDs thin films by about 2-4 orders of magnitude, as compared with that of the PbS-OA QDs thin films. The electron transport mechanism of the PbS-TAA QDs thin films was investigated by current-voltage (I-V) measurements at different temperatures in the range of 293 K-473 K. We found that the charge transport was due to sequential tunneling of charge carriers via the QDs, resulting in the thermally activated hopping process of Arrhenius behavior.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.6
• /
• pp.527-531
• /
• 2005

Fully coherent self-assembled InAs quantum dots(QDs) grown on Si (100) substrates by atmospheric pressure metalorganic chemical vapor deposition(APMOCVD) were grown and the effect of growth conditions such as growth rate and growth time on quantum dots' morphology such as densities and sizes was investigated. InAs QDs of 30 - 80 nm in diameters with densities in the range of (0.6 - 1.7) x $10^{10}\;cm^{-2}$ were achieved on Si substrates and InAs layer was changed from 2 dimensional growth to 3 dimensional one at a nominal thickness less than 0.48 ML. This is attributed to the higher ambient pressure of APMOCVD suppressing of In segregation from the 2 dimensional InAs layer. This In segregation looked to disturb the dot formation especially when the growth rate was low so that the dots became less dense and bigger as the growth rate was lower.

• Biotechnology and Bioprocess Engineering:BBE
• /
• v.11 no.5
• /
• pp.449-454
• /
• 2006

Here we present a sensitive DNA detection protocol using quantum dots (QDs) and magnetic beads (MBs) for large volume samples. In this study, QDs, conjugated with streptavidin, were used to produce fluorescent signals while magnetic beads (MBs) were used to isolate and concentrate the signals. The presence of target DNAs leads to the sandwich hybridization between the functionalized QDs, the target DNAs and the MBs. In fact, the QDs-MBs complex, which is bound using the target DNA, can be isolated and then concentrated. The binding of the QDs to the surface of the MBs was confirmed by confocal microscopy and Cd elemental analysis. It was found that the fluorescent intensity was proportional to concentration of the target DNA, while the presence of non-complementary DNA produced no significant fluorescent signal. In addition, the presence of low copies of target DNAs such as 0.5 pM in large volume samples up to 40mL was successfully detected by using a magnet-assisted concentration protocol which consequently results in the enhancement of the sensitivity more than 100-fold.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.84-87
• /
• 2003

HgTe quantum dots(QDs) were synthesized in aqueous solution by colloidal method. The absorption and photoluminescence(PL) spectrum of the synthesized HgTe QDs revealed the strong exitonic peak in the IR region. And the photocurrent measurement of colloidal QDs are performed using IR light source. The lineshape of the wavelength dependent intensity of photocurrent was very similar to the absorption spectrum, indicating the charges generated by the absorption of photons give direct contribution to photocurrent. The channels of dark current are supposed $H_2O$ containing in thiol by the remarkable drop of current at the state of vacuum. It was thought that the proper passivation layer on the top of HgTe film reduce the dark current and the adequate choice of capping material improves the efficiency of the photocurrent in the HgTe QDs. This study suggests that HgTe QDs are very prospective materials for optoelectronics including photodetectors in the IR range.

• Korean Journal of Materials Research
• /
• v.14 no.2
• /
• pp.146-151
• /
• 2004

We investigated the effects of high potential barriers on the optical characteristics of InAs quantum dots (QDs) by using photoluminescence (PL) and photoreflectance (PR) spectroscopy. A sample with regular InAs quantum dots on GaAs was grown by molecular beam epitaxy (MBE) as a reference. Another InAs QDs sample was embedded in single AlGaAs barriers. On the other hand, a sample with GaAs/AlGaAs superlattice barriers was adopted for comparison with a sample with a single AlGaAs layer. In results, we found that the emission wavelength of QDs was effectively tailored by using high potential barriers. Also, it was found that the optical properties of a sample with QDs embedded in GaAs/AlGaAs superlattices were better than those of a sample with QDs embedded in a single layer of AlGaAs barriers. We believe that GaAs/AlGaAs superlattice could effectively prevent the generation of defects.

• Journal of Powder Materials
• /
• v.24 no.1
• /
• pp.1-5
• /
• 2017

We have investigated the washing method of as-synthesized CdSe/ZnS core/shell structure quantum dots (QDs) and the effective surface passivation method of the washed QDs using PMMA. The quantum yield (QY%) of as-synthesized QDs decreases with time, from 79.3% to 21.1%, owing to surface reaction with residual organics. The decreased QY% is restored to the QY% of as-synthesized QDs by washing. However, the QY% of washed QDs also decreases with time, owing to the absence of surface passivation layer. On the other hand, the PMMA-treated QDs maintained a relatively higher QY% after washing than that of the washed QDs that were kept in toluene solution for 30 days. Formation of the PMMA coating layer on CdSe/ZnS QD surface is confirmed by HR-TEM and FT-IR. It is found that the PMMA surface coating, when combined with washing, is useful to be applied in the storage of QDs, owing to its long-term stability.

• Journal of Sensor Science and Technology
• /
• v.32 no.6
• /
• pp.391-402
• /
• 2023

Low-dimensional (zero-dimensional (0-dim), 2-dimensional (2-dim)) nanoparticles, such as chalcogenide compound semiconductors, III-V semiconductors, transition metal dichalcogenides (TMDs), II-VI semiconductors, nanocarbons, hybrid quantum dots (QDs), and perovskite QDs (PQDs), for which blue light emission has been observed, are reviewed. Current synthesis and device fabrication technologies as well as their prospective applications on next-generation quantum-dot-based light-emitting diodes are discussed.