• 제목/요약/키워드: Quantum Dots(QD)

검색결과 116건 처리시간 0.027초

파장대역폭이 넓은 고휘도 발광소자를 위한 Chirped 양자점 구조의 광/전기 특성 분석 (Optical and Electrical Characteristics of Chirped Quantum Dot Structures for the Superluminescent Diodes with Wide Spectrum Bandwidth)

  • 한일기
    • 한국진공학회지
    • /
    • 제18권5호
    • /
    • pp.365-371
    • /
    • 2009
  • 크기가 다른 양자점 (chirped 양자점) 구조에 대하여 전기발광 (Electroluminescence, EL) 특성과 광발광 (Photoluminescence, PL) 특성을 측정하고 비교 분석하였다. PL 특성에서는 양자점의 기저준위에 의한 피이크가 우세하게 나타난 반면, EL 특성에서는 여기준위에 의한 특성이 우세하게 나타났다. 이와 같은 특성비교로부터 기저준위도 EL 특성에 영향을 미칠 수 있도록 chirped 양자점 구조를 설계하면 파장대역폭이 더욱 넓은 고휘도 발광소자 개발이 가능할 것임을 제안하였다.

NMR analysis of organic ligands on quantum-dots

  • Kim, Jin Hae
    • 한국자기공명학회논문지
    • /
    • 제23권2호
    • /
    • pp.51-55
    • /
    • 2019
  • Quantum dot (QD) is an emerging novel nanomaterial that has wide applicability and superior functionality with relatively low cost. Nuclear magnetic resonance (NMR) spectroscopy has been contributed to elucidate various features of QDs and to improve their overall performance. In particular, NMR spectroscopy becomes an essential analytical tool to monitor and analyze organic ligands on the QD surface. In the present mini-review, application of NMR spectroscopy as a superb methodology to appreciate organic ligands is discussed. In addition, it was recently noted that ligands exert rather greater influence on diverse features of QDs than our initial anticipation, for which contribution of NMR spectroscopy is briefly reviewed.

Energy separation and carrier-phonon scattering in CdZnTe/ZnTe quantum dots on Si substrate

  • 만민탄;이홍석
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
    • /
    • pp.191.2-191.2
    • /
    • 2015
  • Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.

  • PDF

Evaluation of Toxicity and Gene Expression Changes Triggered by Quantum Dots

  • Dua, Pooja;Jeong, So-Hee;Lee, Shi-Eun;Hong, Sun-Woo;Kim, So-Youn;Lee, Dong-Ki
    • Bulletin of the Korean Chemical Society
    • /
    • 제31권6호
    • /
    • pp.1555-1560
    • /
    • 2010
  • Quantum dots (QDs) are extensively employed for biomedical research as a fluorescence reporter and their use for various labeling applications will continue to increase as they are preferred over conventional labeling methods for various reasons. However, concerns have been raised over the toxicity of these particles in the biological system. Till date no thorough investigation has been carried out to identify the molecular signatures of QD mediated toxicity. In this study we evaluated the toxicity of CdSe, $Cd_{1-x}Zn_xS$/ZnS and CdSe/ZnS quantum dots having different spectral properties (red, blue, green) using human embryonic kidney fibroblast cells (HEK293). Cell viability assay for both short and long duration exposure show concentration material dependent toxicity, in the order of CdSe > $Cd_{1-x}Zn_xS$/ZnS > CdSe/ZnS. Genome wide changes in the expression of genes upon QD exposure was also analyzed by wholegenome microarray. All the three QDs show increase in the expression of genes related to apoptosis, inflammation and response towards stress and wounding. Further comparison of coated versus uncoated CdSe QD-mediated cell death and molecular changes suggests that ZnS coating could reduce QD mediated cytotoxicity to some extent only.

자기조립단분자막을 이용한 양자점 발광다이오드의 전하 균형도 개선 (Improved charge balance in quantum dot light-emitting diodes using self-assembled monolayer)

  • 박상욱;정운호;배예윤;임재훈;노정균
    • 전기전자학회논문지
    • /
    • 제27권1호
    • /
    • pp.30-37
    • /
    • 2023
  • 양자점 발광 다이오드(QD-LED)의 효율과 안정성 향상을 위해서 QD 발광층에 주입되는 전하의 균형을 이루는 것은 필수이다. 산화 아연(ZnO)은 최신 QD-LED에서 전자수송층(electron transport layer, ETL)을 구성하기 위해 가장 많이 사용되고 있으나, ZnO의 자발적인 전자 주입은 QD-LED의 성능을 크게 열화시키는 과도한 전자 주입을 유발한다. 본 연구에서는 자기조립단분자막(self-assembled monolayer, SAM) 처리를 통해 ZnO의 전자 주입 특성을 조절하여 QD-LED의 성능을 향상시켰다. 전하 균형도를 향상시킨 결과, SAM을 처리한 QD-LED는 SAM을 처리 안한 소자와 비교하여 내부 양자 효율(external quantum efficiency, EQE)이 25%, 최대 휘도는 200% 향상되었다.

Si 도핑이 InAs 자기조립 양자점 적외선 소자 특성에 미치는 효과 (Effect of Si Doping in Self-Assembled InAs Quantum Dots on Infrared Photodetector Properties)

  • 서동범;황제환;오보람;김준오;이상준;김의태
    • 한국재료학회지
    • /
    • 제29권9호
    • /
    • pp.542-546
    • /
    • 2019
  • We investigate the characteristics of self-assembled quantum dot infrared photodetectors(QDIPs) based on doping level. Two kinds of QDIP samples are prepared using molecular beam epitaxy : $n^+-i(QD)-n^+$ QDIP with undoped quantum dot(QD) active region and $n^+-n^-(QD)-n^+$ QDIP containing Si direct doped QDs. InAs QDIPs were grown on semi-insulating GaAs (100) wafers by molecular-beam epitaxy. Both top and bottom contact GaAs layer are Si doped at $2{\times}10^{18}/cm^3$. The QD layers are grown by two-monolayer of InAs deposition and capped by InGaAs layer. For the $n^+-n^-(QD)-n^+$ structure, Si dopant is directly doped in InAs QD at $2{\times}10^{17}/cm^3$. Undoped and doped QDIPs show a photoresponse peak at about $8.3{\mu}m$, ranging from $6{\sim}10{\mu}m$ at 10 K. The intensity of the doped QDIP photoresponse is higher than that of the undoped QDIP on same temperature. Undoped QDIP yields a photoresponse of up to 50 K, whereas doped QDIP has a response of up to 30 K only. This result suggests that the doping level of QDs should be appropriately determined by compromising between photoresponsivity and operating temperature.

Eco-Friendly Emissive ZnO-Graphene QD for Bluish-White Light-Emitting Diodes

  • Kim, Hong Hee;Son, Dong Ick;Hwang, Do-Kyeong;Choi, Won Kook
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
    • /
    • pp.627-627
    • /
    • 2013
  • Recently, most studies concerning inorganic CdSe/ZnS quantum dot (QD)-polymer hybrid LEDs have been concentrated on the structure with multiple layers [1,2]. The QD LEDs used almost CdSe materials for color reproduction such as blue, green and red from the light source until current. However, since Cd is one of six substances banned by the Restriction on Hazardous Substances (RoHS) directive and classified into a hazardous substance for utilization and commercialization as well as for use in life, it was reported that the use of CdSe is not suitable to fabricate a photoelectronic device. In this work, we demonstrate a novel, simple and facile technique for the synthesis of ZnO-graphene quasi-core.shell quantum dots utilizing graphene nanodot in order to overcome Cd material including RoHS materials. Also, We investigate the optical and structural properties of the quantum dots using a number of techniques. In result, At the applied bias 10 V, the device produced bluish-white color of the maximum brightness 1118 cd/$m^2$ with CIE coordinates (0.31, 0.26) at the bias 10 V.

  • PDF

Bandgap Tuning and Quenching Effects of In(Zn)P@ZnSe@ZnS Quantum Dots

  • Sang Yeon Lee;Su Hyun Park;Gyungsu Byun;Chang-Yeoul Kim
    • 한국분말재료학회지
    • /
    • 제31권3호
    • /
    • pp.226-235
    • /
    • 2024
  • InP quantum dots (QDs) have attracted researchers' interest due to their applicability in quantum dot light-emitting displays (QLED) or biomarkers for detecting cancers or viruses. The surface or interface control of InP QD core/ shell has substantially increased quantum efficiency, with a quantum yield of 100% reached by introducing HF to inhibit oxide generation. In this study, we focused on the control of bandgap energy of quantum dots by changing the Zn/(In+Zn) ratio in the In(Zn)P core. Zinc incorporation can change the photoluminescent light colors of green, yellow, orange, and red. Diluting a solution of as-synthesized QDs by more than 100 times did not show any quenching effects by the Förster resonance energy transfer phenomenon between neighboring QDs.

The Current Status and Future Outlook of Quantum Dot-Based Biosensors for Plant Virus Detection

  • Hong, Sungyeap;Lee, Cheolho
    • The Plant Pathology Journal
    • /
    • 제34권2호
    • /
    • pp.85-92
    • /
    • 2018
  • Enzyme-linked immunosorbent assay (ELISA) and polymerase chain reaction (PCR), widely used for the detection of plant viruses, are not easily performed, resulting in a demand for an innovative and more efficient diagnostic method. This paper summarizes the characteristics and research trends of biosensors focusing on the physicochemical properties of both interface elements and bioconjugates. In particular, the topological and photophysical properties of quantum dots (QDs) are discussed, along with QD-based biosensors and their practical applications. The QD-based Fluorescence Resonance Energy Transfer (FRET) genosensor, most widely used in the biomolecule detection fields, and QD-based nanosensor for Rev-RRE interaction assay are presented as examples. In recent years, QD-based biosensors have emerged as a new class of sensor and are expected to open opportunities in plant virus detection, but as yet there have been very few practical applications (Table 3). In this article, the details of those cases and their significance for the future of plant virus detection will be discussed.

구리 이온 도핑된 카드뮴 셀레나이드 양자점 전자수송층을 갖는 나노와이어 광전변환소자의 효율 평가 (Enhancing the Efficiency of Core/Shell Nanowire with Cu-Doped CdSe Quantum Dots Arrays as Electron Transport Layer)

  • 이종환;황성원
    • 반도체디스플레이기술학회지
    • /
    • 제19권4호
    • /
    • pp.94-98
    • /
    • 2020
  • The core/shell of nanowires (NWs) with Cu-doped CdSe quantum dots were fabricated as an electron transport layer (ETL) for perovskite solar cells, based on ZnO/TiO2 arrays. We presented CdSe with Cu2+ dopants that were synthesized by a colloidal process. An improvement of the recombination barrier, due to shell supplementation with Cu-doped CdSe quantum dots. The enhanced cell steady state was attributable to TiO2 with Cu-doped CdSe QD supplementation. The mechanism of the recombination and electron transport in the perovskite solar cells becoming the basis of ZnO/TiO2 arrays was investigated to represent the merit of core/shell as an electron transport layer in effective devices.