• 대한전자공학회논문지SD
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• 제45권2호
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• pp.125-129
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• 2008

본 논문에서는 Q값(Q-factor)을 증가시킬 수 있는 저전압 능동(active) CMOS 인덕터를 제안하고 설계하였다. Q값을 증가시키기 위한 방법으로 저전압 능동 CMOS 인덕터에 피드백 저항을 삽입하여 등가적인 인덕턴스와 Q값을 증가시켰다. 저전압 능동 CMOS 인덕터는 0.18um 표준 CMOS 공정으로 설계하였으며 모의실험은 애질런트사의 ADS 시뮬레이터를 이용하였다. 모의 실험결과 설계된 피드백 저항을 삽입한 저전압 능동 CMOS 인덕터는 4GHz에서 1.5nH의 인덕턴스와 최대 3000이상의 Q값을 가졌고 소비전력은 5.4mW였다.

• Transactions on Electrical and Electronic Materials
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• 제10권4호
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• pp.121-124
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• 2009

In this study, in order to develop compositions of ceramics suitable for piezoelectric actuator and ultrasonic vibrator applications using low temperature sintering, multilayer, PMN-PNN-PZT ceramics were fabricated using $Li_2CO_3$ and $Na_2CO_3$ as sintering aids. Their structural, piezoelectric and dielectric characteristics were investigated according to the Zr/Ti ratio. As the Zr/Ti ratio increased, the electromechanical coupling factor $k_p$, and piezoelectric constant $d_{33}$ and the mechanical quality factor $Q_m$ all increased with Zr/Ti ratio and then decreased after the ratio exceeded 50/50. At the ratio of Zr/Ti =49/51 and sintering temperature of $900^{\circ}C$; the density, electromechanical coupling factor $k_p$, dielectric constant ${\varepsilon}_r$ piezoelectric $d_{33}$ constant and mechanical quality factor $Q_m$ all showed the optimum values of 7.900 $g/cm^3$, 0.576, 856, 312 pC/N, 1,326, respectively. These property values are very suitable for multilayer ceramics actuator applications.

• 한국전기전자재료학회논문지
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• 제21권3호
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• pp.232-235
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• 2008

In this study, in order to develop the composition ceramics for multilayer piezoelectric actuator, PMN-PNN-PZT ceramics were fabricated using $Li_2CO_3$, $Na_2CO_3$, ZnO as sintering aids and their piezoelectric and dielectric properties were investigated according to the Bi substitution, Bi substitution induced grain growth and increase of sinterablity, And also, Bi substitution suppress secondary phase due to the liquid phase sintering effect. Bi substitution enhanced electromechanical coupling factor ($k_p$) and dielectric constant ($\varepsilon_r$), However, mechanical quality factor($Q_m$) was deteriorated, At the sintering temperature of 870 $^{\circ}C$ and Bi substitution of 1 mol%, density, electromechanical coupling factor ($k_p$), mechanical quality factor ($Q_m$), Dielectric constant ($\varepsilon_r$) and piezoelectric constant ($d_{33}$) of specimen showed the optimum values of 7,878 $g/cm^3$, 0,608, 835, 1603 and 397 pC/N, respectively for multilayer piezoelectric actuator application.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권3호
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• pp.156-156
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• 2000

The piezoelectric properties and the doping effect for $0.95Pb(Zr_xTi_{l-x})O_3+0.O5Pb(Mn_{1/3}Nb_{2/3})O_3$compositions were studied. Also, the heat generation and the change of electromechanical characteristics, the important problem in practical usage, were investigated under high electric field driving. As a experiment results under low electric field, the value of $k_p$ and ${\varepsilon}_{33}^T$ were maximized, but $Q_m$ was minimized $(k_p=0.57, Q_m=1550)$ in the composition of x=0.51. In order to increase the values of $Q_m$, $Nb_2O_5$ was used as a dopant. As the result of that, the grain size was suppressed and the uniformity of grain was improved. Also, the values of $k_p$ decreased, and the values of $Q_m$ increased with doping concentration of $Nb_2O_5$ . As a experiment results under high electric field driving, when vibration velocity was ower than 0.6[m/s], the temperature increase was 20[℃], and the change ratio of mechanical quality factor was less than 10[%]. So, its electromechanical characteristics was very stable. Conclusively, piezoelectric ceramic composition investigated at this paper is suitable for application to high power piezoelectric devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.145-149
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• 2004

In this study, leed-free piezoelectric ceramics were investigated for pressure sensor applications as a function of the amount of $La_2O_3$ addition at BNKT system. With increasing amount of $La_2O_3$ addition, density and dielectric constant were increased up to 0.9wt% addition and decreased after 0.9wt% addition, electromechanical coupling factor$(k_p)$ and mechanical quality factor$(Q_m)$ showed the maximum values at 0.2wt% addition and decreased after 0.2wt% addition. The $k_p$, density, dielectric constant and $Q_m$ were showed the optimum values of 0.40, $5.71g/cm^3$, 768 and 118 at $La_2O_3$ 0.2wt% addition, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.277-278
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• 2007

In this study, in order to develop multilayer piezo-actuator, PMN-PNN-PZT ceramics were fabricated using $Li_2CO_3,\;Na_2CO_3$, ZnO as sintering aids and their piezoelectric and dielectric properties were investigated according to the Bi substitution. Bi substitution enhanced electromechanical coupling factor$(k_p)$ and dielectric constant$({\varepsilon}_r)$. However, mechanical quality factor was deteriorated. At the sintering temperature of $870^{\circ}C$ and Bi substitution of 1mol%, density, electromechanical coupling factor$(k_p)$, mechanical quality factor$(Q_m)$, Dielectric constant$({\varepsilon}_r)$ and piezoelectric constant$(d_{33})$ of specimen showed the optimum value of $7.878g/cm^3$, 0.608, 835, 1603 and 397pC/N, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권2호
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• pp.83-87
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• 2004

Phase noise performance and current consumption of Radio Frequency (RF) Voltage-Controlled Oscillator (VCO) are largely dependent on the Quality (Q) factor of inductor-capacitor (LC) tank. Because the Q-factor of LC tank is determined by on-chip spiral inductor, we designed, analyzed, and modeled on-chip differential inductor to enhance differential Q-factor, reduce current consumption and save silicon area. The simulated inductance is 3.3 nH and Q-factor is 15 at 2 GHz. Self-resonance frequency is as high as 13 GHz. To verify its use to RF applications, we designed 2 GHz differential LC VCO. The measurement result of phase noise is -112 dBc/Hz at an offset frequency of 100 kHz from a 2GHz carrier frequency. Tuning range is about 500 MHz (25%), and current consumption varies from 5mA to 8.4 mA using bias control technique. Implemented in $0.35-{\mu}m$ SiGe BiCMOS technology, the VCO occupies $400\;um{\times}800\;um$ of silicon area.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.93-93
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• 2009

In this study, in order to develop excellent lead-free composition ceramics for piezoelectric transformer, $(K_{5.4}Cu_{1.3}Ta_{10}O_{29})$ added $(K_{0.5}Na_{0.5}](Nb_{0.97}Sb_{0.03})O_3$ were fabricated using conventional mixed oxide method. At the 0.9mol% KCT added specimen, electromechanical coupling factor(kp) and mechanical quality factor ($Q_m$) showed the optimal values of 0.437 and 727.07, respectively, for piezoelectric transformer application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.959-962
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• 2001

In this study, the piezoelectric and dielectric properties and Temperature stability of resonant frequency with MnO$_2$doped 0.36Pb(Sc$_{1}$2/Nb$_{1}$2/)O$_3$- 0.25Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_3$-0.39PbTiO$_3$(hereafter PSNNT) were investigated. The tetagonality of crystal structure was developed with increasing MnO$_2$additive content. With increasing MnO$_2$additive content, the electromechanical coupling factor and quality factor were increased. Electromechanical coupling k$_{p}$ and quality factor Q$_{m}$ at MnO$_2$doped with 2.0mol% were showed highest value of 55.6% and 252. In the case of specimen for MnO$_2$doped with 2mol%, temperature dependance of resonant frequency had a good properties.ies.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.492-496
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• 2004

In this study, (0.96 －x)(PSN-PZT)－xBF－0.04 PNW＋0.3wt%MnO$_2$＋0.6wt%CuO ceramics were fabricated with the variations of the amount of BiFeO$_3$substitution and sintering temperature for the development of modified ceramics which can be sintered in the low temperature($\leq$100$0^{\circ}C$ ), and their microstructural, dielectric and piezoelectric characteristics were investigated. As the amount of BiFeO$_3$ substitution was increased, the density, mechanical quality factor(Q$_{m}$) and electromechanical coupling factor(k$_{p}$) showed the maximum value at each of sintering temperature. At sintering temperature of 98$0^{\circ}C$ and BiFeO$_3$substitution of 2 mol%, the density, dielectric constant and electromechanical coupling factor(k$_{p}$) showed the maximum value of 7.84 g/㎤, 1415 and 0.49, respectively. And at sintering temperature of 95$0^{\circ}C$ and BiFeO$_3$substitution of 3mol%, mechanical quality factor showed the maximum value of 1062. 1062.