• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1244-1245
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• 2008

Recently, piezoelectric transformer is applied to wide fields. Multi layer piezoelectric transformer has the advantage of high step up ratio, electromechanical coupling coefficient(Kp) and mechanical quality factor(Qm), but is indicated of peeling-phenomenon of electrode, rising sintering temperature made price of costly electrode. So in this study, it discuss on method for fabrication of rosen type piezoelectric transformers. For the fabrication as rosen type piezoelectric transformers, synthesized the powder using 0.01Pb$(ni_{1/3}Nb_{2/3})O_3$ - 0.08Pb$(Mn_{1/3}Nb_{2/3})O_3$ - 0.91Pb$(Zr_{0506}Ti_{0496})O_3$ (abbreviated as PNN-PMN-PZT) ceramics. The density, microstructure, dielectric and piezoelectric properties as a function of sintering temperature were investigated. The results indicated that the optimized properties of ceramics were obtained at sintering temperature of 1200$^{\circ}C$, showed the value of $d_{33}$=273pC/N, $K_p$=0.60 $Q_m$=1585, ${\varepsilon}_r$=1454, density=7.917$g/cm^3$ and $tan{\delta}$=0.0064.

• Korean Journal of Materials Research
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• v.11 no.1
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• pp.39-43
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• 2001

Nanocrystalline Fe-Sm-O thin films were prepared by RF magnetron reactive sputtering method in $Ar+O_2$mixed atmosphere with the $O_2$content of 5%. The compositions of the thin films were changed by changing the number of $Sm_2O_3$ chips. The best soft magnetic properties of the thin film with the composition of $Fe_{83.4}Sm_{3.4}O_{13.2}$ were saturation flux density of 18 kG, coercivity of 0.82 Oe and effective permeability about 2,600 at 0.5~100 MHz, respectively. The electrical resistivity of Fe-Sm-O thin films was increased with increasing the amount of Sm and O elements which combined each other, the electrical resistivity of$Fe_{83.4}Sm_{3.4}O_{13.2}$ thin film was $130{\mu}{\Omega}cm$. In case of the small amount of Sm and O elements, the microstructures of Fe-Sm-O thin films showed a precipitated phase of $Sm_2O_3$ on the ${\alpha}-Fe$ phase. With the increase of the amount of Sm and O elements, the microstructures of the Fe- Sm-O thin films were changed into a mixed structure of ${\alpha}-Fe$ crystal-phase and Sm-oxide amorphous phase. The Fe-Sm-O thin films with Fe content in the range of 72~94 at% exhibited the quality factor (Q = $\mu$′/$\mu$") of 7~75 up to 50 MHz.

• Journal of the Korean Ceramic Society
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• v.54 no.2
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• pp.150-157
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• 2017

Three types of piezoelectric single crystals [PMN-PT (Generation I $[Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3]$), PMN-PZT (Generation II $[Pb(Mg_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3]$), PMN-PZT-Mn (Generation III)] were grown by the solid-state single crystal growth (SSCG) method, and their dielectric and piezoelectric properties were measured and compared. Compared to (001) PMN-PT and PMN-PZT single crystals, the (001) PMN-PZT-Mn single crystals exhibited a higher transition temperature between the rhombohedral and tetragonal phases ($T_{RT}=144^{\circ}C$), as well as a higher coercive electric field ($E_C=6.3kV/cm$) and internal bias field ($E_I=1.6kV/cm$). The (011) PMN-PZT-Mn single crystals showed the highest coercive electric field ($E_C=7.0kV/cm$), and the highest stability of $E_C$ and $E_I$ during 60 cycles of polarization measurement. These results demonstrate that both Mn doping (for higher electromechanical quality factor ($Q_m$)) and a (011) crystallographic orientation (for higher coercive electric field and stability) are necessary for high power transducer applications of these piezoelectric single crystals. Specifically, the (011) PMN-PZT-Mn single crystal (Gen. III) had the highest potential for application in the fields of SONAR transducers, high intensity focused ultrasound (HIFU), ultrasonic motors, and others.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.4
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• pp.515-523
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• 2012

In this paper, the resonance characteristics and radiation characteristics of a spherical patch on a dielectric sphere are analyzed. Resonance characteristics can be obtained from the resonant frequency and the quality factor. Radiation characteristics can be also analyzed from the E-field in the far region. In order to calculate these parameters, spectral domain analysis method is applied. Algebraic equation can be obtained in spectral domain through Vector Legendre transform pair and Galerkin's method. So, efficient calculation is possible numerically. It is investigated that radius, curvature of a spherical patch, and dielectric constant of a dielectric sphere have an effect on characteristics of a spherical patch.

• Journal of the Korean Magnetics Society
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• v.6 no.6
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• pp.367-374
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• 1996

The developmement of electronic machine industries requires miniature of size as well as increasement of driving frequency in electronic parts, recently. To realize micro-struture of magnetic devices, in this study, we fabricated thin film inductors by using thin film manufacturing techniques such as photolithography and wet etching process, and these devices are measured at high frequency range of 1 MHz~1 GHz. The results are as follows. The accurate measuring technique by using network analyzer system having microstrip line was established. The manufactured inductors are fabricated with several ten micrometers by means of wet etching process known as easier and more economic than dry etching process. VVhen the device size of two types (spiral, meander) is the same, inductance value L and quality factor Q of spiral type devices are larger than those of meander type, but driving frequency of spiral type is lower than that of meander type due to increasement of inductance L. It is necessary to decrease resistance value R by increasing cross section of the conductor film coil. Thus high frequency measuring method would be a very useful for another measuring fields of the range over several hundreds MHz.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.9-19
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• 1990

A theoretical analysis and measurement technique to determine the complex permittivity and permeability of cylindrical and ring type dielectric resonators is given. The resonant frequency, unloaded quality factor and physical dimensions of dielectric resonator placed between two parallel conducting plates are used to evaluate the complex permittivity and permeability. This process is repeated for other higher-order modes to expand the evaluation at higher resonant frequencies. The nature of each mode is identified by measuring the variations of field strength along the azimuthal and longitudinal direction. An error analysis taking into account various error sources reveals that $TE_{0np}$ or quasi-TE modes yield the least amount of measurement error, which is less than $0.5{\%}$for the real part, $4{\%}$for the imaginary part of complex permittivity.

• Korean Journal of Materials Research
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• v.16 no.11
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• pp.705-709
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• 2006

Nb was doped to Pb-free $(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) by a solid state mixing process to form $(Bi_{0.5}Na_{0.5})Ti_{1-x}Nb_xO_3\;(x=0{\sim}0.05)$ (BNTNb) and its doping effects on ferroelectric and piezoelctric properties of BNT were investigated. The BNTNb solid solutions were formed up to x=0.01 with no apparent second phases while grain sizes decreased. As x increased, coercive field ($E_c$) and mechanical quality factor ($Q_m$) decreased but piezoelectric constant ($d_{33}$) increased, which indicates Nb acts as a donor for BNT.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.11-18
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• 2021

A novel microwave dielectric composite material for ultra-low temperature co-fired ceramics (ULTCC) with (1-x)BaWO₄-xBaV₂O₆ (x=0.54~0.85) composition was prepared by firing a mixture of BaWO₄ and BaV₂O₆. Shrinkage tests showed that the ceramic composite begins to densify at a temperature as low as 550℃ and can be sintered at 650℃ with 98% of relative density under the influence of BaV₂O₆. X-ray diffraction analysis showed that BaWO₄ and BaV₂O₆ coexisted and no secondary phase was detected in the sintered bodies, implying good chemical compatibility between the two phases. Near-zero temperature coefficients of the resonant frequency (𝛕_f) could be achieved by controlling the relative content of the two phases, due to their positive and negative 𝛕_f values, respectively. With increasing BaV₂O₆ (x from 0.53 to 0.85), the 𝛕_f value of the composites increased from -7.54 to 14.49 ppm/℃, ε_r increased from 10.08 to 11.17 and the quality factor (Q×f value) decreased from 47,661 to 37,131 GHz. The best microwave dielectric properties were obtained for x=0.6 samples with ε_r=10.4, Q×f=44,090 GHz, and 𝛕_f=-2.38 ppm/℃. Chemical compatibility experiments showed the developed composites are compatible with aluminum electrode during co-firing process.

• Journal of the Korean Ceramic Society
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• v.41 no.9
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• pp.709-714
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• 2004

The additive of low temperature sintering in Mn-doped PMN-PZT known as high piezoelectric materials was studied in this experiment. B$_2$O$_3$ was used for the additive of low temperature sintering. The effects of sintering temperature in dielectric, and piezoelectric properties were investigated with the amounts of B$_2$O$_3$. Sintered density was increased in comparison with no addition and under 2wt％ B$_2$O$_3$ and lower sintering temperature than 100$0^{\circ}C$. Therefore, in the low sintering temperature, the densification was improved by the addition of the B$_2$O$_3$. However, the sintering density was lower than that of the main composition in the case of the sintered at over 10$50^{\circ}C$. Dielectric constant with the addition of B$_2$O$_3$ was evaluated. The dielectric constant was 1000 2 wt％ of B$_2$O$_3$ and sintered at 100$0^{\circ}C$. Under 2wt％ of B$_2$O$_3$, the electromechanical coupling factor and the piezoelectric constant were not so much decreased. The electromechanical coupling factor and the piezoelectric constant were 50％ and 300(${\times}$10$^{-12}$ C/N) respectively. The mechanical quality factor was increased with B$_2$O$_3$. The mechanical quality factor was 1700 at 0.5wt％ B$_2$O$_3$ and sintered at 110$0^{\circ}C$. Dielectric loss was less than 0.5％ regardless of the amount of B$_2$O$_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.189-189
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• 2008

Due to the environmental issue vast research is going on to replace the widely used lead contented piezoelectric materials. Bismuth sodium titanate (abbreviated as BNT) based bismuth sodium titanate-barium titanate (abbreviated as BNBT) ceramic was prepared by using modified method rather than conventional mixed oxide method. This modification was made to improve the properties of BNT based ceramic. In this procedure $BaTiO_3$ (abbreviated as BT) was prepared using conventional mixed oxide method. Analytical grade raw materials of $BaCO_3$ and $TiO_2$ were weighted and ball milled using ethanol medium. The mixed slurry was dried and sieved under 80 mesh. Then the powder was calcined at $1100^{\circ}C$ for 2 hours. This calcined BT powder was used in the preparation of BNBT. Stoichiometric amount of $Bi_2O_3$, $Na_2CO_3$, $TiO_2$ and BT were weighted and mixed by using ball mill. The used calcination temperature was $850^{\circ}C$ for 2 hours. Calcined powder was taken for another milling step. BNBT disks were pressed to 15 mm of diameter and then cold isostatical press (CIP) was used. Pressed samples were sintered at $1150^{\circ}C$ for 2 hours. The SEM microstructure analysis revealed that the grain shape of the sintered ceramic was polyhedral and grain boundary was well matched where as the sample prepared by conventional method showed irregular arrangement and grain boundary not well matched. And sintered density was better (5.78 g/cc) for the modified method. It was strongly observed that the properties of BNBT ceramic near MPB composition was found to be improved by the modified method compare to the conventional mixed oxide method. The piezoelectric constant dB of 177.33 pC/N, electromechanical coupling factor $k_p$ of 33.4%, dielectric constant $K_{33}^T$ of 688.237 and mechanical quality factor $Q_m$ of 109.37 was found.