• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.4
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• pp.341-345
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• 2003

ZnWO$_4$shows excellent frequency selectivity due to its high quality factor(Q${\times}$f) at microwave frequencies. However, in order to use ZnWO$_4$as multilayered wireless communication components, its other properties such as sintering temperature(105$0^{\circ}C$). $$\tau$_f$(-70ppm/$^{\circ}C$) and $$\varepsilon$_r$(15.5) should be modified. In present study, TiO$_2$and LiF were used to improve the microwave dielectric and sintering properties of ZnWO$_4$. TiO$_2$ additions to ZnWO$_4$changed $\tau$$_{f}$ from negative to positive value, and also increased $$\varepsilon$_r$, due to its high $$\tau$_f$(＋400ppm$^{\circ}C$) and $$\varepsilon$_r$(100). At 20 mol% TiO$_2$ addition, $$\tau$_f$was controlled to near zero ppm/$^{\circ}C$ with $$\varepsilon$_r$=19.4 and Q${\times}$ f=50000GHz. However, the sintering temperature was 110$0^{\circ}C$. LiF addition to the ZnWO$_4$＋TiO$_2$ mixture greatly reduced the sintering temperature from 110$0^{\circ}C$ to 85$0^{\circ}C$ due to liquid phase formation. Also LiF addition decreased the $$\tau$_f$value due to its high negative $$\tau$_f$ value. Therefore, by controlling the TiO$_2$and LiF amount. temperature stable LTCC(Low Temperature Cofired Ceramics) material with low loss in the ZnWO$_4$-TiO$_2$-LiF system could be fabricated.d.d.

• Journal of the Korean Ceramic Society
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• v.40 no.10
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• pp.954-960
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• 2003

To develop mobile phone antenna modules, glass-ceramics composites that are 20∼80 dielectric constant materials which has been fabricated. The glass-ceramics composites were based in the BNT (BaO-Nd$_2$O$_3$-TiO$_2$), and properties-a sintering and dielectric property-were investigated in its composites according to the $K_2$O-CaO-P$_2$O$_{5}$ system glass frits. The prepared ceramics were sintered at 900∼120$0^{\circ}C$ with the glass frit contents ranging from 10 to 40 wt%. The shrinkage and relative density grew into increasing glass frits and sintering temperature. Sintered composites showed the tendency that the dielectric constant ($\varepsilon$$_{r}$) and quality factor (Q${\times}$f) decreased in increasing glass frits and sintering temperature.

• Asian Pacific Journal of Cancer Prevention
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• v.16 no.10
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• pp.4451-4456
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• 2015

Background: The aim of our present study was to compare quality of life (QoL) between intermediate-stage (BCLC-B) HCC patients who had undergone either liver resection or transcatheter arterial chemoembolization (TACE). Materials and Methods: A total of 102 intermediate-stage HCC patients participated in our study, including 58 who had undergone liver resection and 44 who had undergone TACE. Baseline demographic characteristics, tumor characteristics, and long-term outcomes, such as tumor recurrence, were compared and analyzed. QoL was assessed using the Short Form (SF)-36 health survey questionnaire with the mental and physical component scales (SF-36 MCS and PCS). This questionnaire was filled out at HCC diagnosis and 1, 3, 6, 12, 24 months after surgery. Results: For the preoperative QoL evaluation, the 8 domains related to QoL were comparable between the two groups. The PCS and MCS scores were significantly decreased in both the TACE and resection groups at1 month after surgery, and this decrease was greater in the resection group. These scores were significantly lower in the resection group compared with the TACE group (P<0.05). However, these differences disappeared at 3 and 6 months following surgery. One year after surgery, the resection group showed much higher PCS scores than the TACE patients (P=0.018), and at 2 years after surgery, the PCS and MCS scores for the resection group were significantly higher than those for the TACE group (P<0.05). Eleven patients (19.0%) in the resection group and 17 (38.6%) in the TACE group suffered HCC recurrence (P<0.05). Univariate and multivariate analyses indicated that tumor recurrence (HR=1.211, 95%CI: 1.086-1.415, P=0.012) was a significant risk factor for poorpostoperative QoL in the HCC patients.Conclusions: Due to its effects on reducing HCC recurrence and improving long-term QoL, liver resection should be the first choice for the treatment of patients with intermediate-stage HCC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.210-211
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• 2009

In this study, we propose characteristics improvement methods according to via hole plating method for FBAR Duplexer with US PCS($T_x$:1850MHz~1910MHz, $R_x$:1930MHz~1990MHz) bandwidth which is used for wireless systems. Also, we designed and fabricated 3.8*3.8*1.8mm size microminiature FBAR Duplexer based on this proposal. First of all, in this study, we fabricated pentagon shape resonators by different size to make filter combination, and their quality factor(Q) are 687 with 6.6% of $k_{eff}^2$. Using this resonators, designed 3*2Type $T_x$ filter and 3*4Type $R_x$ filter. The transmission line, which works as phase shifter, is designed with $210{\mu}m$ in width and 18mm in length Stripline type. Inductor, which is used for matching component, is designed with width of $75{\mu}m$, a technically achievable minimum width. And adopted plating method of filling via hole with conductive epoxy for improved grounding and thermal conductivity. Using these configuration with all of the matching component values, we found Duplexer characteristics of -1.57dB ~ -1.73dB in insertion loss, -56dB in attenuation at 1850MHz~1910MHz of $T_x$ band. Also, found -2.71 dB ~ -3.23dB in insertion loss, -58dB in attenuation at 1930MHz~1990MHz of $R_x$ band.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.485-492
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• 2000

The sintering characteristics and the effects of density on dielectric properties in 0.2Ba(Mg$_{1}$3(Nb$_{2}$3/)O$_3$-0.8Ba(Mg$_{1}$3//Ta$_{2}$3/)O$_3$ceramics were investigated. The samples were made by the powder mixing techniques with the two step calcining conditions. When the 1st and the 2nd calcining temperatures were 120$0^{\circ}C$ and the sintering temperature was 155$0^{\circ}C$the density of samples showed the highest value (7.45 g/cm$^3$, 98.5% of theoretical density) among them. The dielectric constant of samples was nearly independent of density but the tan $\delta$ and the temperature coefficient of dielectric constant decreased linearly with increasing of the density. The quality factor(Q$\times$f), the temperature coefficient of resonance frequency and the dielectric constant of Ba[Mg$_{1}$3(Nb$_{0.2}$/Ta$_{0.8}$)sub 2/3/]O$_3$ceramic were 79,548 GHz, +1.5 ppm/$^{\circ}C$ and 26 in the microwave range, respectively.ely.

• Journal of the Korean Ceramic Society
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• v.52 no.1
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• pp.77-82
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• 2015

The effect of the electrode type on the dielectric and piezoelectric properties of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbZrO_3-PbTiO_3$ (PMN-PZT) single crystals was investigated in an effort to improve their properties for various piezoelectric applications. First, three different types of PMN-PZT single crystals [PMN-PZT-A (piezoelectrically soft type; dielectric constant ~ 10,000), PMN-PZT-B (piezoelectrically soft type; phase-transition temperature between the rhombohedral and tetragonal phases ($T_{RT}$) ~ $145^{\circ}C$), PMN-PZT-C (piezoelectrically hard type; high mechanical quality factor ($Q_m$) ~ 1,000)] were fabricated using the solid-state single crystal growth (SSCG) method. Then, four different types of electrodes [sputtered Au, sputtered Cr/Au, sputtered Ti/Au, and fired Ag] were formed on the single crystals, and their dielectric and piezoelectric properties were measured. The single crystals with a sputtered Ti/Au electrode showed the highest dielectric and piezoelectric constants but the lowest coercive electric field ($E_C$). The single crystals with a fired Ag electrode showed the lowest dielectric and piezoelectric constants but the highest coercive electric field ($E_C$). This dependence on the type of electrode was most significant in the piezoelectrically hard PMN-PZT-C single crystals. However, the effects of the electrode type on the phase transition temperatures ($T_C$, $T_{RT}$) and dielectric loss were negligible. These results clearly demonstrate that it is important to select an appropriate electrode so as to maximize the dielectric and piezoelectric properties of single crystals in each type of piezoelectric application.

• Journal of the Korean Ceramic Society
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• v.55 no.2
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• pp.166-173
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• 2018

In order to investigate the effect of Mn on the dielectric and piezoelectric properties of PMN-PT [$Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$], four different types of 71PMN-29PT samples were prepared using the solid-state single crystal growth (SSCG) method: (1) Undoped single crystals, (2) undoped polycrystalline ceramics, (3) Mn-doped single crystals, and (4) Mn-doped polycrystalline ceramics. In the case of single crystals, the addition of 0.5 mol% Mn to PMN-PT decreased the dielectric constant ($K_3{^T}$), piezoelectric charge constant ($d_{33}$), and dielectric loss (tan ${\delta}$) by about 50%, but increased the coercive electric field ($E_C$) by 50% and the electromechanical quality factor ($Q_m$) by 500%, respectively. The addition of Mn to PMN-PT induced an internal bias electric field ($E_I$) and thus specimens changed from piezoelectrically soft-type to piezoelectrically hard-type. This Mn effect was more significant in single crystals than in ceramics. These results demonstrate that Mn-doped 71PMN-29PT single crystals, because they are piezoelectrically hard and simultaneously have high piezoelectric and electromechanical properties, have great potential for application in fields of SONAR transducers, high intensity focused ultrasound (HIFU), and ultrasonic motors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.131-134
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• 2002

The effect of the addition on the densification, low temperature sintering, and microwave dielectric properties of the Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$/(CLNT) was investigated. $Bi_2O_3$ additives improved the dencification and reduced the sintering temperature from $1150^{\circ}C$ to $900^{\circ}C$ of CLNT microwave dielectric ceramics. As increasing $Bi_2O_3$ contents, the dielectric constants and bulk density were increased. The quality factor, however, was decreased slighty. The temperature coefficients of the resonant frequency shifted positive value as increasing $Bi_2O_3$ contents. The dielectric properties of Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$ and Ca[($Li_{1/3}Nb_{2/3}$)$_{0.8}Ti_{0.2}$]$O_{3-{\delta}}$ with 5wt% $Bi_2O_3$ sintered at $900^{\circ}C$ for 3h were $\varepsilon_{r}$=20, 35 Q.$f_{0}$=6500, 11,000 GHz, $\tau_{f}$=4, 13 ppm/$^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.388-396
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• 2010

In this study, we propose characteristics improvement methods according to via hole plating method for FBAR Duplexer with bandwidth($T_x4: 1850 MHz ~ 1910 MHz, $R_x$:1930 MHz ~ 1990 MHz) which is used for wireless systems. Also, we designed and fabricated $3.8{\times}3.8{\times}1.8mm$ size microminiature FBAR Duplexer based on this proposal. First of all, in this study, we fabricated pentagon shape resonators by different size to make filter combination, and their quality factor(Q) are 687 with 6.6% of ${k_{eff}}^2$. Using this resonators, we designed $3{\times}2$ Type $T_x$ filter and $3{\times}4$ Type $R_x$ filter. The transmission line, which works as phase shifter, is designed with 210 ${\mu}m$ in width and 18 mm in length Stripline type. Inductor, which is used for matching component, is designed with width of 75 ${\mu}m$, a technically achievable minimum width. And adopted plating method of filling via hole with conductive epoxy for improved grounding and thermal conductivity. Using these configuration with all of the matching component values, we found Duplexer characteristics of -1.57 dB ~ -1.73 dB in insertion loss, -56 dB in attenuation at 1850 MHz ~ 1910 MHz of $T_x$ band. Also, found -2.71 dB ~ -3.23 dB in insertion loss, -58 dB in attenuation at 1930 MHz ~ 1990 MHz of $R_x$ band.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.125-129
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• 2000

In this paper, We designed and fabricated C-band bandpass filter using dielectric resonators. From waveguide cutoff frequency which applied the region between adjacent dielectric resonators, the height of cavity is determined. The cavity's diameter is determined to the twice of dielectric resonator's diameter considering the conductor loss. The resonant frequency of the DR-cavity is calculated with travelling wave mode analysis. Conventionally, circular cylindrical dielectric resonator is analysed by Cohn's model which use the evanescent mode in the region between dielectric resonator wall and circular cavity wall, which is an approximated method. The external quality factor, Q$_{ex}$ has found with simulation result using Ansoft's Maxwell simulation tool. The designed filter using dielectric resonators with dielectric constant of 45 has the passband center at 5.065GHz. The bandpass filter using dielectric resonators have about 1dB insertion loss. 20MHz bandwidth and more than 30dB attenuation at f$_{0}$$\pm$15MHz.z.z.