• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.12 s.354
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• pp.75-82
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• 2006

In this paper, we design the meander line inductors with high sensitivity and high quality factor(Q) using high characteristic impedance of aperture ground plate. Sensitivity as a frequency is new defined by variation of effective inductance per analysis frequency range instead of self resonance frequency (SRF). An equivalent lumped circuit is derived to explain the characteristic of high frequency inductor. The 4 nH meander line inductor with aperture ground plate has 0.45 nH/GHz of good sensitivity and 86 of Q at 0.7 GHz.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.403-408
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• 1994

Dielectric and structural properties of $Ba_{1-x}$(Z $n_{1}$3/T $a_{2}$3/) $O_{3}$+1 mol% Mn $O_{2}$ (x=0, 0.01, 0.02, 0.03, 0.04) ceramics was investigated at microwave frequencies. With $Ba_{+2}$ shortage, the sinterability and the unloaded Q( $Q_{u}$) were much improved, and the ordering in B site and the lattice distortion was greatly enhanced and the structure approached the completely ordered structure. $Q_{u}$ was strongly correlated with these factors such as ordering ratio, lattice distortion and sinterability, and had the maximum value of 7500 at x=0.01. The dielectric constant was near 30 and the temperature coefficient of the resonant frequency was 2 ppm/.deg. C at x=0.01.1.1.1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.46-50
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• 2003

Crystal structure and microwave dielectric properties of $Ba(Mg_{1/3-x}Nb_{2/3})O_3$ (BMN) ceramics were investigated. $Ba(Mg_{1/3}Nb_{2/3})O_3$ has the 1:2 ordered hexagonal structure. The 1:2 ordering and relative density of specimens increased with small Mg deficiency(x). The variation of Q-value with Mg deficiency is very similar to that of 1:2 ordering and relative density. The highest $Q{\times}f_0$ achieved in this investigation is about 96,000 for $Ba(Mg_{1/3-0.02}Nb_{2/3})O_3$. The improvement of Q-value with Mg-deficiency is related to the increase of degree of ordering and relative density of the specimen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.838-842
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• 2006

0.03Pb$(Sb_{0.5}Nb_{0.5})O_{3}-0.03Pb(Mn{1/3}Nb{2/3)O_{3}-(0.94-x)PbTiO_{3}-xPbZrO_{3}$ ceramics doped with $CeO_{2}$ were synthesized by conventional bulk ceramic processing technique. Phases analysis, microstructures and piezoelectric properties were investigated as a function of $CeO_{2}$ content (0.03, 0.05, 0.1 0.3, 0.5 and 0.7 wt%). Microstructures and phases information were characterized using a scanning electron microscope (SEM) and an X-ray diffractometer (XRD). Mechanical quality factor ($Q_{m}$) and coupling factor(kp) were obtained from the resonance measurement method. Both $Q_{m}$ and $k_{p}$ were shown to reach to the maximum at 0.1 wt% $CeO_{2}$. In order to evaluate the stability of resonance frequency and effective electromechanical coupling factor ($K_{eff}$) as a function of $CeO_{2}$, the variation of resonance and anti-resonance frequency were also measured using a high voltage frequency response analyzer under various alternating electric fields from 10 V/mm to 80 V/mm. It was shown that the stability of resonance frequency and effective electromechanical coupling factor were increased with increasing the $CeO_{2}$ contents.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.11 no.5
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• pp.89-96
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• 2012

In this paper, a low phase noise oscillator is designed using an interdigital hairpin resonator for UTIS (Urban Traffic Information Systems). The interdigital hairpin resonator has several characteristics compared with a conventional hairpin resonator, which are 70% size reduction and improvement of harmonic characteristics. In addition, Q (Quality factor) of the interdigital hairpin resonator is about 132, which is suitable for the design of a low phase noise oscillator. The oscillator suggested in this paper shows the output power of 12 dBm and the phase noise characteristic of -100.8 dBc/Hz at 100 kHz offset frequency from the center frequency of 5.75 GHz. The phase noise is improved by about 12 dB compared with a conventional oscillator using an interdigital hairpin resonator.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.6
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• pp.231-237
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• 2016

This paper presents a multiband low phase noise CMOS VCO with wide frequency tunability using switched bondwire inductor bank. The combination of bondwire inductor and CMOS switch transistor enhances frequency tunability and improves phase noise characteristics. The proposed multiband VCO operates from 2.3GHz to 6.3GHz with phase noise of -136dBc/Hz and -122dBc/Hz at 1 MHz offset frequency, respectively. Switched bondwire inductor bank shows high quality factor(Q) at each frequency band, which allows better tradeoff between phase noise and power consumption. The proposed VCO is designed in TSMC 0.18um CMOS process and consumes 7.2 mW power resulting in figure of merit(FOM) of -189.3dBc/Hz at 1 MHz offset from 6GHz carrier frequency.

• Progress in Superconductivity
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• v.11 no.2
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• pp.106-111
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• 2010

Sapphire resonators with $YBa_2Cu_3O_{7-\delta}$ (YBCO) endplates have provided a way to realize extremely high quality factor due to the extremely low dielectric loss of sapphire and conductive loss of YBCO films, which enables to measure the low surface resistance of superconductor films at microwave frequencies. We present microwave properties of HTS sapphire resonators designed for measuring the surface resistance of HTS films at millimeter-wave frequencies by using the two-resonance mode dielectric resonator method. Despite enhanced surface resistance ($R_S$) of YBCO films due to the quadratic frequency dependence of the $R_S$, the unloaded quality factor ($Q_0$) of the $TE_{021}$ mode sapphire resonator still appears to be well above $1\;{\times}\;10^6$ at a mm-wave frequency of 38 GHz at 10 K. However, it appears that the $TE_{012}$ mode $Q_0$ is unexpectedly low despite that the corresponding resonance peak looks uncoupled with parasitic modes. We discuss possible reasons for the unexpected results using the surface resistance at the $TE_{021}$, $TE_{012}$, and $TE_{011}$ mode frequencies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.284-287
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• 2002

The $BaTi_{4}O_{9}$ ceramics with CoO(0.5wt%) were prepared by the conventional mixed oxide method. The sintering temperature and time were $1350^{\circ}C$, 3hr., respectively. The structural properties were investigated with sintering temperature by XRD. Also the microwave dielectric properties of the $BaTi_{4}O_{9}$ ceramics were studied. According to the X -ray diffraction patte구 of the $BaTi_{4}O_{9}$ ceramics with CoO(0.5wt%), the orthorhombic $BaTi_{4}O_{9}$ structure was appeared. In the case of $BaTi_{4}O_{9}$ ceramics with CoO(0.5wt%), dielectric constant $(\varepsilon_{r})$, quality factor$(Q{\times}f_r)$ and temperature coefficient of resonant frequency$(\tau_{f})$ were 40.8, 43,270 and $2.5ppm/^{\circ}C$, respectively.ࠀࠀ Ѐ耀
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• Journal of the Korean Magnetics Society
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• v.8 no.4
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• pp.241-248
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• 1998

In accordance with tendency to miniaturization and high frequency operation of electronic products, extensive efforts of miniaturizing magnetic devices such as inductors, transformers and magnetic sensors are being made. In order to study on fabrication and characteristic of micro-magnetic devices, we carried out two sets of experiments. One is to develop a magnetic film that is suitable for high frequency operation, and the other is to develop the fabrication processes for realizing the micro-coil with meander shape. Magnetic films were composed of FeTa(N,C) fabricated by DC magnetron sputtering system. Their microstructures were nanocrystalline structure and magnetic properties showed Bs:13~17 kG, Hc:0.1~0.2 Oe and $\mu$':2000~4000. Cu coil pattern fabricated by selective electroplating process showed good electrical conductivity. In the case of air core inductors, inductance (L) of 50 nH, resonance frequency $(f_R)$ of 700 MHz, and quality factor (Q) of 30 at 200 MHz could be obtained. In the case of close type magnetic inductors, inductance (L) of 150 nH, resonance frequency $(f_R)$ of 100 MHz, and quality factor (Q) of 4 at 10~30 MHz could be obtained.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.5 s.120
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• pp.530-538
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• 2007

An inductor library for efficient low cost RFIC design has been developed based on a standard digital 0.18 ${\mu}m$ CMOS process. The developed library provides four structural variations that are most popular in RFIC design; standard spiral structure, patterned ground shield(PGS) structure to enhance quality factor, stacked structure to enable high inductance values in a given silicon area, multilayer structure to lower series resistance. Electromagnetic simulation, equivalent circuit, and parameter extraction processes have been verified based on measurement results. The extensive measurement and simulation results of the inductor library can be a great asset for low cost RFIC design and development.