• Journal of information and communication convergence engineering
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• v.3 no.3
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• pp.137-141
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• 2005

The paper presents some methods to improve characteristics of film bulk acoustic resonator (FBAR) devices. The FBAR devices were fabricated on Bragg reflectors. Thermal treatments were done by sintering and/or annealing processes. The measurement showed a considerable improvement of return loss $(S_{11})$ and quality factor $(Q_{s/p}).$ These thermal treatment techniques seem very promising for enhancing FBAR resonance performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.397-403
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• 2003

Microwave dielectric properties of (1-x)ZnW $O_4$-xTi $O_2$ ceramic systems were investigated with calcination temperatures and Ti $O_2$ contents. The ZnW $O_4$ ceramic could be suitably sintered at 1075$^{\circ}C$ and showed the dielectric constant of 13.6, quality factor(Q$\times$ $f_{O}$value) of 22,000 and temperature coefficient of resonant frequency($\tau$$_{f}$) of -65$\pm$2ppm/$^{\circ}C$. Increasing the amount of Ti $O_2$ in the range of 0.25 to 0.45 mol, the dielectric constant and $\tau$$_{f}$ increased due to the role of Ti $O_2$ but the quality factor decreased due to the increase of phase boundaries. The 0.7ZnW $O_4$-0.3Ti $O_2$ ceramic showed the dielectric constant of 19.8, qualify factor(Q$\times$ $f_{0}$) of 20,000 and $\tau$$_{f}$ of -3$\pm$1ppm/$^{\circ}C$.>.EX>.>.>.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.413-417
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• 1998

In this paper, we investigate frequency dependance of inductance of FeCoB amorphous magnetic films. $(Fe_{1-x}Co_x)_{79}Si_2B_{19}$ was used as the basic composition of amorphous magnetic film having near zero magnetostriction. The amorphous magnetic films were fabricated with x=0.94 and x=0.95 by using sputtering method at high frequency. The films were anneald under non-magnetic field and near crystallization temperatures(30min at $280^{\circ}C$, 30min and 1hr at $400^{\circ}C$, respectively). As the results of the experiments with the fabricated films, the lowest coercive force was 0.084[Oe] at 400[W] of the input power and the crystallization temperature was $360^{\circ}C$ . In the case 30min at 40$0^{\circ}C$ the inductance value in the low frequency with x=0.95 was higher by 488% than that with x=0.94. The quality factor Q was below 0.7 for all samples. We obtained the highest quality value at 400[KHz] with 30min at $280^{\circ}C$ and x=0.94. The value was about 0.62. Also, the quality factor value was about 0.35 at 1[MHz] with 30min at $280^{\circ}C$ and x=0.95.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.4
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• pp.613-619
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• 1994

Dielectric properties of Ba(ZnS11/3TTaS12/3T)OS13T+x ZnO(x=0, 0.4, 0.8, 1.0 wt%) ceramics have been investigated at microwave frequencies. With excess ZnO, the sinterability was improved and the dielectric constant($\varepsilon$S1rT) and the unloaded quality factor(QS1UT) were increased. The structure changed into hexagonal from pseudocubic as being annealed at 140$0^{\circ}C$ in excess ZnO composition. Also, the temperature coefficient of the resonant frequency ($\tau$S1fT) turned into (-)ppm/$^{\circ}C$ when sintered at 155$0^{\circ}C$ for 2 hours. But the specimen sintered in ZnO muffling showed increased density and $\varepsilon$S1rT but lowerde QS1uT. Among the specimen investigated, expecially the composition added with 0.4wt% excess ZnO showed the most optimum dielectric values ($\varepsilon$S1rT=28, QS1uT x f=120000GHz) better than those of original Ba(ZnS11/2T TaS12/3T)OS13T ceramics.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.350-353
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• 2003

Millimeter-wave dielectric ceramics have been used like applications for ultrahigh speed wireless LAN because it reduces the resources of electromagnetic wave, and Intelligent Transport System (ITS) because of straight propagation wave. For millimeterwave, the dielectric ceramics with high quality factor (Q$.$f), low dielectric constant($\varepsilon$), and nearly zero temperature coefficient of resonant frequency ($\tau$) are needed. No microwave dielectric ceramics with these three properties exist except Ba(Mg$\_$1/3/Ta/sub1/3/)O$_3$ (BMT), which has a little high s: In this paper, alumina (Al$_2$O$_3$) and fosterite (Mg$_2$SiO$_4$), candidates for millimeter-wave applications, were studied with an objective to get high q$.$f and nearly zero $\tau$$\_$f/ For alumina ceramics, q$.$f more than 680,000 GHz was obtained but it was difficult to obtain nearly zero Qf. On the other hand, for forsterite ceramics, q$.$f was achieved from 10,000 GHz of commercial for sterite to 240,000 GHz of highly purified MgO and SiO$_2$ raw materials, and $\tau$$\_$f/ was reduced a few by adding TiO$_2$ with high positive $\tau$$\_$f/.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.83-87
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• 2004

Phase noise performance and current consumption of Radio Frequency (RF) Voltage-Controlled Oscillator (VCO) are largely dependent on the Quality (Q) factor of inductor-capacitor (LC) tank. Because the Q-factor of LC tank is determined by on-chip spiral inductor, we designed, analyzed, and modeled on-chip differential inductor to enhance differential Q-factor, reduce current consumption and save silicon area. The simulated inductance is 3.3 nH and Q-factor is 15 at 2 GHz. Self-resonance frequency is as high as 13 GHz. To verify its use to RF applications, we designed 2 GHz differential LC VCO. The measurement result of phase noise is -112 dBc/Hz at an offset frequency of 100 kHz from a 2GHz carrier frequency. Tuning range is about 500 MHz (25%), and current consumption varies from 5mA to 8.4 mA using bias control technique. Implemented in $0.35-{\mu}m$ SiGe BiCMOS technology, the VCO occupies $400\;um{\times}800\;um$ of silicon area.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.126-129
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• 2010

(1-X) $(Na_{0.5}K_{0.5})NbO_3-X$ $K_4CuNb_8O_{23}$ (NKN-X KCN) ceramics were produced using the conventional solid state sintering method, and their sinterability and electric properties were investigated. The density, dielectric constant (${\varepsilon}_r$), piezoelectric constant $d_{33}$, electromechanical coupling factor $k_p$ and mechanical quality factor $Q_m$ value of the NKN ceramics depended upon the KCN content and the sintering temperature. In particular, the KCN addition to the NKN greatly improved the mechanical quality factor $Q_m$ value. The ceramic with X = 2.0 mol% sintered at $1,150^{\circ}C$ possesses the optimum properties (${\varepsilon}_r=241$, $d_{33}=78$, $k_p=0.34$ and $Q_m=1,121$). These results indicate that the ceramic is a promising candidate material for applications in lead free piezoelectric transformer and filter materials.

• Transactions on Electrical and Electronic Materials
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• v.13 no.6
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• pp.283-286
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• 2012

(1-X)$(Na_{0.5}K_{0.5})NbO_3-XK_{5.4}Cu_{1.3}Ta_{10}O_{29}$ (NKN-KCT) lead-free piezoelectric ceramics have been synthesized by the conventional solid state sintering method, and their sinterability and piezoelectric properties were investigated. Typically, this material is sintered between 1,025 and $1,100^{\circ}C$ for 2 hours to achieve the required densification. Crystalline structures and Microstructures were analyzed by X-ray diffraction and scanning electron microscope. The density, dielectric constant (${\varepsilon}_r$), piezoelectric constant $d_{33}$, electromechanical coupling factor $k_p$ and mechanical quality factor $Q_m$ value of the NKN ceramics depended upon the KCT content and the sintering temperature. In particular, the KCT addition to NKN greatly improved the mechanical quality factor $Q_m$ value. The ceramic with X = 1.0 mol% sintered at $1,050^{\circ}C$ exhibited optimum properties (${\varepsilon}_r$=246, $d_{33}$=95, $k_p$=0.38 and $Q_m$=1,826). These results indicate that the ceramic is a promising candidate material for applications in lead free piezoelectric transformer and filter materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.481-485
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• 2004

0.91 (PSN-PZT) －0.05BF －0.04PNW＋0.3wt%MnO$_2$＋0.6wt%CuO＋xwt%CeO$_2$ ceramics were fabricated with the variations of CeO$_2$addition at the sintering temperature of 95$0^{\circ}C$ and their microstructure, dielectric and piezoelectric characteristics were investigated. As the amount of CeO$_2$ addition increased, the grain size, density and electromechanical coupling factor(k$_{p}$) were increased and the mechanical quality factor(Q$_{m}$ ) was decreased. At the 0.3 wt% CeO$_2$, the density, grain size, electromechanical coupling factor(k$_{p}$), and pizoelectric constants(d$_{33}$, g$_{33}$) showed the maximum value of 7.87 g/㎤, 3.22 $\mu\textrm{m}$, 0.5, 289 pC/N, and 22.2 ㎷ㆍm/N, respectively. However, mechanical quality factor(Q$_{m}$ ) showed the minimum value of 807 at the 0.5 wt% CeO$_2$.$.EX>.EX>.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.124-129
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• 2007

Dielectric and piezoelectric properties of $0.57Pb(Sc_{1/2}Nb_{1/2})O_{3}-0.43PbTiO_{3}$, which is the morphotropic phase boundary composition for the PSN-PT system, were investigated as a function of $Fe_{2}O_{3},\;Nb_{2}O_{5}\;and\;MnO_{2}$ addition 0 wt% to 0.9 wt%. The maximum dielectric constant of ${\varepsilon}_{33}/{\varepsilon}_{o}=2054$ and the minimum dielectric loss of $tan{\delta}=0.37\;%$ at room temperature were obtained at 0.1 wt% of $Fe_{2}O_{3}$ and 0.5 wt% of $MnO_{2}$ addition, respectively. With addition of 0.5 wt% $Nb_{2}O_{5}$ and $0.5\;wt%\;MnO_{2}$, the electromechanical coupling factor $k_{p}$ and mecanical quality factor $Q_{m}$ were significantly increased, respectively. The maximum electromechanical coupling factor $k_{p}=61.5\;%$ was obtained by addition of $Nb_{2}O_{5}$ and high mechanical quality factor $Q_{m}=919$ was obtained by addition of $MnO_{2}$. The $Q_{m}(=919)$ value is 3.3 times larger than that of non-doped 0.57PSN-0.43PT ceramics.