• Journal of the Korean Electrochemical Society
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• v.8 no.4
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• pp.149-154
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• 2005

Fuel cell performance evaluation logic was developed using G-language (LabVIEW) to measure performance stability. Degree of stability and reliability of performance data were improved with averaged value and standard deviation method. Water injection system was introduced and the performance using this method was comparable to that of conventional humidification method. Water injection system has advantage of lowering operation energy consumption, reducing the number of parts needed in humidification, therefore increasing efficiency of fuel cell system. Fuel cell performance was decreased in case of low temperature operation such as sub freezing condition. Air purge method was tested to reduce the water content in cell fixture before sub freezing condition. The performance degradation due to low temperature operation was minimized by air purge method in medium size cell fixture ($25cm^2$) case.

• Korean Journal of Food Science and Technology
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• v.30 no.2
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• pp.260-265
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• 1998

In this study, volatile flavor compounds in sesame oils were analyzed by using pure-and-trap method and a gas chromatography. 2-ethoxy-3-ethylpyrazine was used as an internal standard and retention index (Kovat's number) for the volatiles were determined through the use of a n-paraffin $(C_5-C_{25})$ standards. A total of 33 volatile compounds including 14 pyrazines, 7 thiazoles, 4 pyridines, 2 oxazoles and 6 others were identified in the sesame oils. By comparing the total yields of volatile flavor compounds, the pyrazines are the most abundant compounds all of the oil samples and considered as good contributor to characteristic flavor of sesame oil. The oil from the seeds roasted in the electric pan at $200^{\circ}C$ and $230^{\circ}C$ for 10 minutes generated 277.06 ppm, 264.81 ppm in pyrazine and 15.16 ppm, 13.19 ppm in thiazole, respectively. The sensory evaluation of oil samples was also investigated. The sesame oil obtained from the sesame seeds roasted at $200^{\circ}C$ for 10 minutes with electric pan showed good flavor scores and quality among the all of samples.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.110-115
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• 2007

A plasma enhanced atomic layer deposition(PEALD) system has been constructed adopting an inductively coupled plasma(ICP) source with an ALD system, and its plasma generation was carried out. Cobalt thin films were deposited on a p-type Si(100) wafer at $230^{\circ}C$. $Co_{2}(CO)_{6}$ was used as a cobalt precursor, $NH_{3}$ as a reactant, and Ar as a carrier and purge gas. The properties of the thin films were investigated using field emission scanning electron microscopy(FESEM) and auger electron spectroscopy(AES). Large amounts of impurities were found in both the ALD film and the PEALD film, however, the amount of impurities in the PEALD film was reduced to about 50 % compared to that in the ALD film. It was found that $NH_{3}$ plasma, very effectively, induces the reaction with carbon in a cobalt precursor.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.23-27
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• 2023

Organic light-emitting diode(OLED) is very thin organic films which are hundreds of nanometers. Unlike bottom-emission OLED(BEOLED), top-emission OLED(TEOLED) emits light out the front, opaque moisture absorbents or metal foils can't be used to prevent moisture and oxygen. And it is difficult to have flexible characteristics with glass encapsulation, so thin film encapsulation which can compensate for those two disadvantages is mainly used. In this study, Al₂O₃ thin films by atomic layer deposition(ALD) were examined by changing the argon gas purge flow rate and we applied this Al₂O₃ thin films to the encapsulation of TEOLED. Ag / ITO / N,N'-Di-[(1-naphthyl)-N,N'-diphenyl]-1,1'-biphenyl-4,4'-diamine / tris-(8-hydroxyquinoline) aluminum/ LiF / Mg:Ag (1:9) were used to fabricate OLED device. The characteristics such as brightness, current density, and power efficiency are compared. And it was confirmed that with a thickness of 40 nm Al₂O₃ thin film encapsulation process did not affect OLED properties. And it was enough to maintain a proper OLED operation for about 9 hours.

• Journal of Hydrogen and New Energy
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• v.17 no.1
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• pp.8-20
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• 2006

For large scale separation hydrogen from different mixing ratio(60/40 and 80/20 vol.%) of hydrogen and methane $1Nm^3/hr$ and $4Nm^3/hr$ 2bed-6step pressure swing adsorption(PSA) process was used, respectively. The effects of the feed gas pressure, adsorption time, the feed flow rate and the P/F(purge to feed) ratio on the process performance were evaluated. In the $1Nm^3/hr$ PSA results, 11 atm adsorption pressure and 0.10 P/F ratio might be optimal values to obtain more than 75 % recovery and 99 % purity hydrogen in these processing. The optimum feed flowrate was 22 LPM and 17 LPM in the ratio 60/40 and 80/20, respectively. In the $4Nm^3/hr$ PSA results, 10 atm adsorption pressure might be simulated values to obtain more than 80 % recovery and 99 % purity hydrogen in these processing.

• Analytical Science and Technology
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• v.13 no.3
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• pp.277-281
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• 2000

The solid phase microextrction (SPME) fiber which contains $100{\mu}m$ polydimethyl siloxane of a stationary phase was used for the analysis of volatile organic compounds contained in aqueous solution. sixteen volatile organic compounds, which were spiked in blank water and extracted by the headspace SPME techique, were analyzed by gas chromatography/mass spectrometry (GC/MS). Analytical results showed that the percent of average recoveries and relative standard deviations were 97% and 4.7%, respectively. The value of detection limit was ranged from 0.01 to $0.5{\mu}g/l$. These results are more accurate than those obtained by the other methods such as purge and trap and headspace methods.

• Journal of the Korean Society of Safety
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• v.12 no.4
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• pp.161-168
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• 1997

Most plants producing semiconductors use a lot of chemicals, hazardous materials, and explosive gases. Though those materials are hazardous too much, some works still have to be done manually by human workers. However, according to a historical survey, more than half industrial accidents of those plants resulted from human errors or malfunctions. Thus, this research aimed 1) to diagnose shifting hazardous materials of semiconductor plants, 2) to estimate failure probability of human workers through human reliability analysis, and 3) to find out the tasks on which educational emphasis should be put. Through personal interview and visiting working spots, shifting tasks were analyzed, and modelled into a 24-step work, and after that, THERP and ETA was applied. During the shifting work, estimated human failure probability under the assumption of independency, 2.3004E-05, underestimated that probability 8. l008E-05 which could be calculated under the assumption of dependency. And this analysis showed that gas leakage from an old cylinder occupies 78.27% in the case of independent failures whereas gas leakage from a new cylinder occupies 75.06% in the case of dependent failures. So it was concluded that dependency assumption may gloss real situations. In addition, confirming gauge of regulators and closing valves turned out to be the most important tasks than purge tasks.

• Transactions of the Korean Society of Automotive Engineers
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• v.11 no.2
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• pp.40-47
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• 2003

This paper presents a new evaporative system monitoring method using a virtual HC sensor for an automotive on-board diagnosis. A development was made at providing mathematical expressions from the lambda control information to estimate the HC mass flow purged into the intake manifold from the canister for implementing a virtual HC sensor. The change of the lambda averagevalue reflected the influence of the additional fuel from purging results the sensor estimation of the purged HC amount. Based on this virtual HC sensor, a new evaporative system monitoring method was proposed comparing the amount of purged HC amount with the amount of the HC gas evaporated from the fuel tank and absorbed into the canister. Finally, the method was validated with a simulation using the data logged from the retail car.

• Metals and materials international
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• v.24 no.6
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• pp.1293-1302
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• 2018

Nanocrystalline (NC) Ni electrodeposits (EDs) with a mean grain size of $34{\pm}12nm$ has been investigated, from room temperature to $800^{\circ}C$ under a purge gas of argon, by both non-isothermal and isothermal differential scanning calorimetry measurements, in combination with characterization of temperature-dependent microstructural evolution. A significant exothermic peak resulting from superimposition of recrystallization and surface oxidation occurs between 340 and $745^{\circ}C$ at a heating rate of $10^{\circ}C/min$ for the NC Ni EDs. The temperatures for recrystallization and oxidation increase with increasing the heating rate. In addition, recrystallization leads to a profound brittle-ductile transition of the Ni EDs in a narrow range around the peak temperature for the recrystallization.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.538-543
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• 2008

Recently a nano-scale diamond is possible to manufacture forms of powder(below 100 nm) by new processing of explosion or deposition method. Using a sintering of nano-scale diamond is possible to manufacture of grinding tools. We have need of a processing development of coated uniformly inorganic to prevent an abnormal grain growth of nano-crystal and bonding obstacle caused by sintering process. This paper, in order to improve the sintering property of nano-scale diamond, we coated ZnO thin films(thickness: $20{\sim}30\;nm$) in a vacuum by ALD(atomic layer deposition) Economically, in order to deposit ZnO all over the surface of nano-scale diamond powder, we used a new modified fluidized bed processing replaced mechanical vibration effect or fluidized bed reactor which utilized diamond floating owing to pressure of pulse(or purge) processing after inserted diamond powders in quartz tube(L: 20 mm) then closed quartz tube by porosity glass filter. We deposited ZnO thin films by ALD in closed both sides of quartz tube by porosity glass filter by ALD(precursor: DEZn($C_4H_{10}Zn$), reaction gas: $H_2O$) at $10^{\circ}C$(in canister). Processing procedure and injection time of reaction materials set up DEZn pulse-0.1 sec, DEZn purge-20 sec, $H_2O$ pulse-0.1 sec, $H_2O$ purge-40 sec and we put in operation repetitive 100 cycles(1 cycle is 4 steps) We confirmed microstructure of diamond powder and diamond powder doped ZnO thin film by TEM(transmission electron microscope) Through TEM analysis, we confirmed that diamond powder diameter was some $70{\sim}120\;nm$ and shape was tetragonal, hexagonal, etc before ALD. We confirmed that diameter of diamond powders doped ZnO thin film was some $70{\sim}120\;nm$ and uniform ZnO(thickness: $20{\sim}30\;nm$) thin film was successfully deposited on diamond powder surface according to brightness difference between diamond powder and ZnO.