• 대한기계학회논문집
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• 제18권8호
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• pp.2113-2122
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• 1994

The 3-D FEM analysis for simulating the stamping operation of planar anisotropic sheet metals with arbitrarily-shaped tools is introduced. An implicit, incremental, updated Lagrangian formulation with a rigid-viscoplastic constitutive equation is employed. Contact and friction are considered through the mesh-normal, which compatibly describes arbitrary tool surfaces and FEM meshes without depending on the explicit spatial derivatives of tool surfaces. The consistent full set of governing relations, comprising equilibrium equation and mesh-normal geometric constraints, is appropriately linearized. The linear triangular elements are used for depicting the formed sheet, based on membrane approximation. Barlat's non-quadratic anisotropic yield criterion(strain-rate potential) is employed, whose in-plane anisotropic properties are taken into account with anisotropic coefficients and non-quadratic function parameter. The planar anisotropic finite element formulation is tested with the numerical simulations of the stamping of an automotive hood inner panel and the drawing of a hemispherical punch. The in-plane anisotropic effects on the formability of both mild steel and aluminum alloy sheet metals are examined.

• 한국해양공학회지
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• 제34권3호
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• pp.155-166
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• 2020

Ductile fracture prediction is critical for the reasonable damage extent assessment of ships and offshore structures subjected to accidental loads, such as ship collisions and groundings. A fracture model combining the Hosford-Coulomb ductile fracture model with the domain of solid-to-shell equivalence model (HC-SDDE), was used in fracture simulations based on shell elements for the punching fracture experiments of unstiffened and stiffened panels. The flow stress and ductile fracture characteristics of JIS G3131 SPHC steel were identified through tension tests for flat bar, notched tension bar, central hole tension bar, plane strain tension bar, and pure shear bar specimens. Punching fracture tests for unstiffened and stiffened panels are conducted to validate the presented HC-DSSE model. The calibrated fracture model is implemented in a user-defined material subroutine. The force-indentation curves and final damage extents obtained from the simulations are compared with experimental results. The HC-DSSE fracture model provides reasonable estimations in terms of force-indentation paths and residual damage extents.

• 대한두개안면성형외과학회지
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• 제11권1호
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• pp.58-61
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• 2010

Purpose: Sebaceous carcinoma is a rare malignant tumor that occurs mostly in head and neck regions. Early diagnosis and treatment are necessary because it tends to be locally aggressive and goes through distal metastasis with fast progression. This study presents reliable surgical methods for sebaceous carcinoma in head and neck regions. Methods: Three patients were included in this study. First, a 61-year-old woman visited the hospital with a yellow-colored, slowly growing mass on the left ala. A 54-year-old woman had a brown-colored mass on her right preauricle. Last case was a 62-year-old man who had a yellow-colored mass on his scalp. CT scan and punch biopsy were done. All cases were diagnosed as sebaceous carcinoma. The lesions were resected with 10 mm safety margin and various regional flaps were used for reconstruction. Results: Histological examination revealed sebaceous differentiation and local invasions. Postoperatively, all patients did not suffer from complication and no recurrence was found. Conclusion: We recommend early wide excision with an enough safety margin, and a regional flap as a treatment of sebaceous carcinoma.

• 센서학회지
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• 제26권3호
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• pp.214-222
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• 2017

In this study, the effects of internal heat treatment associated sintering temperatures were simulated by the Finite Element Method (FEM). The sintering mechanism of pulsed current activated sintering process (PCAS) is still unclear because of some unexplainable heat transfer phenomena in coupled multi-physical fields, as well as the difficulty in measuring the interior temperatures of metal powder. We have carried out simulation study to find out thermal distributions between graphite mold and Ruthenium powder prior to PCAS process. For PCAS process, heating rate was maintained at $100^{\circ}C/min$ the simulation indicates that the sintering temperature range was between $1000^{\circ}C$ to $1300^{\circ}C$ under 60 MPa. The heat transfer inside the Ruthenium sintered-body sample was modelled through the whole process in order to predict the minimum interior temperature. Thermal simulation shows that the interior temperature gradient decreased by graphite punch length and calculation results well agreed with the PCAS field test results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.267-270
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• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10$\mu\textrm{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sifted conventional LTIGBT and the conventional LTIGBT which has the width of 17$\mu\textrm{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17$\mu\textrm{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field in the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1096-1099
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• 2001

The basic design structure of RC-GCTs (Reserve-Conducting Gate-Commutated Thyristors) is firstly given in this paper. The bulk of wafer is punch-through (PT) type with high resistivity and narrow N-base width. The photo-mask was designed upon the turn-off characteristics of GCT and solution of separation between GCT and diode part. The center part of Si wafer is free-wheeling diode (FWD) and outer is GCT part which has 240 fingers totally. The switching performance of GCT was investigated by Dessis of ISE. The basic manufacture process of 2500V-4500V RC-GCTs was given in this work. Additionally, the local carrier lifetime control by 5Mev proton irradiation was adopted so as to not only to have the softness of reverse recovering for FWD but for reduction of turn-off losses of GCT as well.

• 소성∙가공
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• 제6권5호
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• pp.446-455
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• 1997

A Combined extrusion operation consists of forward and backward extrusion forming and it is possible to make the process be simple by employing it. But the metal flow pattern induced by the operation is hard to analyze accurately because the flows are non-steady, which have at least two directions dependent upon each other. So engineers in the industrial factories had conducted the two extrusion operations separately. A new process was designed by the industrial expert for forming of an alu-minum preform using the combined extrusion operation. In this study, experiments and finite element analysis was carried out to determine the process parameters. Through the preliminary experiment, it was shown that warm forming condition was more desirable than cold or hot ones. And optimal shape of initial billet could be also determined. From the compatibility test, bonde-lube was chosen as the optimal lubricant and 20$0^{\circ}C$ as the material temperature by the inspection of micro-structure. The operation was simulated by the rigid-plastic finite element method to examine the metal flow. Disap-pearing of dead metal zone was observed as the punch fell down and desirable shape was obtained from the one operation. As a result of this study, 7 operations could be reduced and 225% of material saved.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2003년도 The 8th Asian Symposium on Precision Forging ASPF
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• pp.26-30
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• 2003

Since the dimension of cold forged part is larger than the cavity size of forging die, the difference results from the various features, such as, the elastic characteristics of die and workpiece, thermal influences, and machine-elasticity. All of these factors should be considered to get more accurate prediction of the dimension of forged part. In this paper, severe FE techniques are proposed to improve the prediction accuracy of dimension for cold forged part. To validate the importance of the above mentioned factors, and the estimated results are compared with the experimental results. The used model is a closed die upsetting of cylindrical billet. The calculated dimensions are well coincided with .the measured values based on the proposed techniques. The proposed techniques have put two simple but important points into Fe simulation. One is the separation of forging stages into 3 steps, from a loading through punch retraction to ejecting stage. The other is the dimensional change, according to the temperature changes due to the deformation. The FE analysis could predict the dimension of cold forged part within the $10{\mu}m$, based on the more realistic consideration.

• ETRI Journal
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• 제14권1호
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• pp.52-65
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• 1992

전자선 직접묘사 (E-beam direct writing lithography) 방법을 이용하여 $0.2\mum$ 과 $0.3\mum$ 의 게이트길이를 가지는 NMOS 트랜지스터를 제작하였다. 게이트만 전자선 직접묘사 방법으로 정의하고 나머지는 optical stepper를 이용하는 Mix & Match 방식을 사용하였다. 게이트산화막의 두께는 최소 6nm까지 성장시켰으며, 트랜지스터구조로서는 lightly-doped drain(LDD) 구조를 채택하였다. 짧은 채널효과 및 punch through를 줄이기 위한 방안으로 채널에 깊이 붕소이온을 주입하는 방법과 well을 고농도로 도핑하는 방법 및 소스와 드레인에 $p^-$halo를 이온주입하는 enhanced lightly-doped drain(ELDD) 방법을 적용하였으며, 제작후 성능을 각각 비교하였다. 제작된 $0.2\mum$의 게이트길이를 가지는 소자에서는 문턱전압과 subthreshold기울기는 각각 0.69V 및 88mV/dec. 이었으며, Vds=3.3V에서 측정한 포화 transconductance와 포화 드레인전류는 각각 200mS/mm, 0.6mA/$\mum$이었다. $0.3\mum$소자에서는 문턱전압과 subthreshold 기울기는 각각 0.72V 및 82mV/dec. 이었으며, Vds=3.3V에서 측정한 포화 transconductance는 184mS/mm이었다. 이러한 결과는 전원전압이 3.3V일 때 실제 ULSI에 적용가능함을 알 수 있다.

• Journal of information and communication convergence engineering
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• 제16권1호
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• pp.43-47
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• 2018

The existing modeling of avalanche dominated breakdown in double gate MOSFETs (DGMOSFETs) is not relevant for 10 nm gate lengths, because the avalanche mechanism does not occur when the channel length approaches the carrier scattering length. This paper focuses on the punch through mechanism to analyze the breakdown characteristics in 10 nm DGMOSFETs. The analysis is based on an analytical model for the thermionic-emission and tunneling currents, which is based on two-dimensional distributions of the electric potential, obtained from the Poisson equation, and the Wentzel-Kramers-Brillouin (WKB) approximation for the tunneling probability. The analysis shows that corresponding flat-band-voltage for fixed threshold voltage has a significant impact on the breakdown voltage. To investigate ambiguousness of number of dopants in channel, we compared breakdown voltages of high doping and undoped DGMOSFET and show undoped DGMOSFET is more realistic due to simple flat-band-voltage shift. Given that the flat-band-voltage is a process dependent parameter, the new model can be used to quantify the impact of process-parameter fluctuations on the breakdown voltage.