• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.1001-1007
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• 2001

In this study, high dielectric materials, (Pb,La)Ti $O_3$ thin films were fabricated by PLD (Pulsed Laser Deposition) method and investigated in terms of structural and electrical characteristics in order to develope the dielectric materials for the use of new capacitor layers of Giga bit-level DRAM. The deposition conditions were examined in order to fabricate uniform thin films through systematic changes of oxygen pressures and substrate temperature. The uniform thickness and smooth morphology of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were obtained at the conditions of substrate-target distance 5.5[cm], laser energy density 2.1[J/$\textrm{cm}^2$], oxygen pressure 200[mTorr] and substrate temperature 500[$^{\circ}C$]. After the (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were fabricated under the above conditions, they were post-annealed by RTA process in order to increase the dielectric constant. The film thickness of 1200 [$\AA$] had dielectric constant 821. Assuming that operating voltage is 2V, leakage current density of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films would result into 10$^{-7}$ [A/$\textrm{cm}^2$] and satisfied the specification of 256M DRAM planar capacitor, 4$\times$10$^{-7}$ [A/$\textrm{cm}^2$]m}^2$]

• 한국자기학회지
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• 제4권3호
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• pp.214-218
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• 1994

페리마그넷(Ferrimagnetic) $Y_{3}Fe_{5}O_{12}$(Garnet) 박막 또는 후막은 초고주파 대역에서 사용하는 통신부품의 소자로서 핵심 역할을 하고 있다. 본 연구에서는 요즘 신기술로 소개된 펄스 레이저 증착기술(Laser Ablation Technique)에 의하여 가넷의 표준조성인 $Y_{3}Fe_{5}O_{12}$ 후막을 에피성장 시키는데 성공하였다. KrF 가스를 사용한 Eximer 레이저를 10 Hz의 펄스주파수로 $Al_{2}O_{3}$(1102) 면에서 거의 집합조직의 에피후막을 성장시켰다. 후막의 자기특성 및 성장 양상은 사용한 기판 및 기판온도와 산소분압에 따라 결정되지만 본 연구에서 얻어진 최적의 자기특성은 가넷두께 $4.1\;\mu\textrm{m}$에서 $4{\pi}M_{s}=1300$ Gauss, $H_{c}=37.5$ Oe 의 값을 산소분압 100 mTorr 및 기판온도 $600^{\circ}C$에서 증착한 후 $700^{\circ}C$에서 2시간 소둔처리하여 최적값을 얻을 수가 있었다. 이러한 가넷후막은 협대역 주파수 범위에서 Magnetostatic Spin Wave 원리를 이용한 Filter로 사용 가능하다.

• 대한소아치과학회지
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• 제23권4호
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• pp.954-967
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• 1996

Laser application to modify healthy permanent dentin to improve microhardness and caries resistence has been previously reported but the physical modification and ablation thresholds of carious and sclerotic dentin has yet to be identified. This study determined the energy density required by modify (physical modification threshold, PMT) and remove (ablation threshold, AT) infected carious, affected and selerotic dentin compared to healthy permanent dentin. $1{\pm}0.25mm$ thick dentin sections(n=272) from extracted human teeth were used. Smear layer was removed 0.5M EDTA for 2 minutes. Utilizing three pulsed fiberopitc delivered contact lasers with different emission wavelengths($1.06{\mu}m$=Nd : YAG, $2.10{\mu}m$=Ho : YAG and $2.94{\mu}mEr$ : YAG). The energy density($J/cm^2$) was incrementally increased and the resulting tissue interaction classified on a scale from 0-6. A minimum of 5 repetitions/energy density were completed. Light microscopy(10-25X) was used to verify the physical modification(scale=3) and ablation thresholds(scale=4) of the various forms of dentin and the data were analyzed by logistic regression at the 95 % confidence interval. PMT and AT by the laser and the dentin types were: PMT and AT was lower in infected dentin than in sound dentin for all lasers. PMT and AT induced by Nd : YAG>Ho : YAG>Er : YAG for all forms of dentin. Microhardness was increased in sound dentin at PMT. Morphology of crater examined by light microscopy showed Nd : YAG was safe and effective for removing carious dentin and Er: YAG was effective for removing sound dentin. The PMT and AT for YAG lasers are different as a function of dentin type which may be utilized for selective modification and removal of dentin.

• 한국세라믹학회지
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• 제28권12호
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• pp.1005-1011
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• 1991

Y-Ba-Cu-O thin films were in-situ fabricated on LaAlO3(100) substrates using the second harmonics of a pulsed Nd:YAG laser. Thin films were deposited under 200 (mtorr) of oxygen atmosphere, when the substrate temperature was changed between 67$0^{\circ}C$ and 82$0^{\circ}C$. After deposition, the films were in-situ annealed at 50$0^{\circ}C$ under 2/3 bar of oxygen pressure. We showed that the deposition temperature affects the formation of superconducting phase, the resistance, and the surface morphology. The Y-Ba-Cu-O thin films deposited at 76$0^{\circ}C$ show the zero resistance critical temperature of 85 K.

• Journal of Magnetics
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• 제1권1호
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• pp.46-50
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• 1996

Highly oriented ${BaFe_{12}{O_{19}$ films were obtained by a KrF excimer laser ablation technique using (110)$(012){Al_2}{O_3}$(001)$(012){Al_2}{O_3}$ and $(012){Al_2}{O_3}$ substrates, respectively.The degree of alignment of more than 95% were achieved for (100) on (110)$(012){Al_2}{O_3}$ and (001)$(001){Al_2}{O_3}$ planes, and heteroepitaxial films of (114) on (012)$(012){Al_2}{O_3}$were possible to be grown with a lasing energy density of 6.67 J/$cm^2$ at an oxygen partial pressure ${PO_2}$ of 900 mTorr. The best magnetic properties were obtained from the as-deposited films at the substrate temperature of $700^{\circ}C$, and post annealing treatment was not needed to enhance the magnetic properties. Experimentally saturated magnetization ($4_pi M_S$) of 3600~3800 Gauss and coercivities $(H_c)$ of 3050~3080 Oe, which approach 85% of those of Ba-ferrite bulk composed of single domain particles, were obtained in this study.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.901-904
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• 2001

For the c-axis oriented epitaxial YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on r-cut sapphire substrate it is necessary to deposit buffer layers. The CeO$_2$buffer layer was deposited on sapphire substrate using RF magnetron sputtering system. We investigated XRD pattern of CeO$_2$thin films at various sputtering conditions such as sputtering gas ratio, sputtering power, target to substrate distance, sputtering pressure and substrate temperature. The optimum condition was 15 mTorr with deposition pressure, 1:1.2 with $O_2$and Ar ratio and 9cm with target to substrate distance. The CeO$_2$(200) peak was notable for a deposition temperature above 75$0^{\circ}C$. The YBa$_2$Cu$_3$O$_{7-{\delta}}$ was deposited on CeO$_2$buffered r-cut sapphire substrate using pulsed laser ablation. The YBa$_2$Cu$_3$O$_{7-{\delta}}$CeO$_2$(200)/A1$_2$O$_3$thin film was exhibited a critical temperature of 89K.xhibited a critical temperature of 89K.

• 한국전기전자재료학회논문지
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• 제17권1호
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• pp.112-117
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• 2004

$Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$(x=0.0, 0.3, 0.6, 1.0, 1.4) luminescent thin films have been grown on Si (100) substrates using pulsed laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity, the surface morphology and photoluminescence (PL) of the films are highly dependent on the amount of Gd. The photoluminescence (PL) brightness data obtained from $Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$ films grown under optimized conditions have indicated that Si (100) is one of promised substrates for the growth of high quality $Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$ thin film red phosphor. In particular, the incorporation of Gd into $Y_2$ $O_3$ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with $Y_{1.35}$G $d_{0.60}$ $O_3$: $E^{3+}$, whose brightness was increased by a factor of 1.95 in comparison with that of $Y_2$ $O_3$:E $u^{3+}$ films.3+/ films.films.lms.

• 한국추진공학회지
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• 제12권3호
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• pp.1-8
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• 2008

본 연구에서는 고출력 레이저에 의한 고에너지 물질의 점화 현상 모델을 제시하였다. 본 모델에서는 강판에 긴 조사 시간을 가진 펄스 레이저를 조사하여 발생한 어블레이션에 의한 열 확산을 고려하였고, 수 kW의 continuous 레이저를 폭약에 조사하여 폭약이 열에 의하여 점화하는 현상을 실험 결과와 비교를 통해 검증하였다. 여기서는 매우 짧은 조사 시간(femto- 혹은 pico-second)을 가진 펄스 레이저에서 나타나는 전자에 의한 효과는 무시 되었다. 본 연구에 사용된 폭약은 RDX, TATB 그리고 HMX이며, 제시한 모델은 실험 결과와 흡사한 결과를 도출하였다.

• 한국재료학회지
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• 제10권12호
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• pp.807-811
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• 2000

MFISFET (Metal-ferroelectric-nsulator-semiconductor-field effect transistor)에의 적용을 위해 CeO$_2$와 SrBi$_2$Ta$_2$O$_{9}$ 박막을 각각 r.f. sputtering 및 pulsed laser ablation법으로 제조하였다. CeO$_2$ 박막은 증착시 스퍼터링개스비 (Ar:O$_2$)에 따른 특성을 고찰하였다. Si(100) 기판 위에 $700^{\circ}C$에서 증착된 CeO$_2$ 박막들은 (200)방향으로 우선방향성을 가지고 성장하였고 $O_2$ 개스량이 증가함에 따라 박막의 우선방향성, 결정립도 및 표면거칠기는 감소하였다. C-V특성에서는 Ar:O$_2$가 1 : 1인 조건에서 제조된 박막이 가장 양호한 특성을 보였다. 제조된 박막들의 누설전류값은 100kV/cm의 전계에서 $10^{-7}$ ~$10^{-8}$ A의 차수를 보였다. CeO$_2$/Si 기판위에 성장된 SBT는 다결정질상의 치밀한 구조를 가지고 성장을 하였다 80$0^{\circ}C$에서 열처리된 SBT박막으로 구성된 MFIS구조의 C-V 특성에서 memory window 폭은 0.9V를 보였으며 5V에서 4$\times$$10^{-7}$ A/$\textrm{cm}^2$의 누설전류밀도를 보였다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 춘계학술대회논문집D
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• pp.348-353
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• 2001

Experimental schemes that enable characterization of phase-change phenomena in the micro scale regime is essential for understanding the phase-change kinetics. Particularly, monitoring rapid vaporization on a submicron length scale is an important yet challenging task in a variety of laser-processing applications, including steam laser cleaning and liquid-assisted material ablation. This paper introduces a novel technique based on Michelson interferometry for probing the liquid-vaporization process on a solid surface heated by a KrF excimer laser pulse (${\lambda}=248nm,\;FWHM=24\;ns$) in water. The effective thickness of a microbubble layer has been measured with nanosecond time resolution. The maximum bubble size and growth rate are estimated to be of the order of $0.1{\mu}m\;and\;1\;m/s$, respectively. The results show that the acoustic enhancement in the laser induced vaporization process is caused by bubble expansion in the initial growth stage, not by bubble collapse. This work demonstrates that the interference method is effective for detecting bubble nucleation and microscale vaporization kinetics.