• Title/Summary/Keyword: Pulsed load

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Enhancement of Surface Hardness and Corrosion Resistance of AISI 310 Austenitic Stainless Steel by Low Temperature Plasma Carburizing Treatment

  • Lee, Insup
    • Journal of the Korean institute of surface engineering
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    • v.50 no.4
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    • pp.272-276
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    • 2017
  • The response of AISI 310 type austenitic stainless steel to the novel low temperature plasma carburizing process has been investigated in this work. This grade of stainless steel shows better corrosion resistance and high temperature oxidation resistance due to its high chromium and nickel content. In this experiment, plasma carburizing was performed on AISI 310 stainless steel in a D.C. pulsed plasma ion nitriding system at different temperatures in $H_2-Ar-CH_4$ gas mixtures. The working pressure was 4 Torr (533Pa approx.) and the applied voltage was 600 V during the plasma carburizing treatment. The hardness of the samples was measured by using a Vickers micro hardness tester with the load of 100 g. The phase of carburized layer formed on the surface was confirmed by X-ray diffraction. The resultant carburized layer was found to be precipitation free and resulted in significantly improved hardness and corrosion resistance.

Surface hardening and enhancement of Corrosion Resistance of AISI 310S Austenitic Stainless Steel by Low Temperature Plasma Nitrocarburizing treatment.

  • Lee, Insup
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.11a
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    • pp.175-177
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    • 2012
  • A corrosion resistance and hard nitrocarburized layer was distinctly formed on 310 austenitic stainless steel substrate by DC plasma nitrocarburizing. Basically, 310L austenitic stainless steel has high chromium and nickel content which is applicable for high temperature applications. In this experiment, plasma nitrocarburizing was performed in a D.C. pulsed plasma ion nitriding system at different temperatures in $H_2-N_2-CH_4$ gas mixtures. After the experiment structural phases, micro-hardness and corrosion resistance were investigated by the optical microscopy, X-ray diffraction, scanning electron microscopy, micro-hardness testing and Potentiodynamic polarization tests. The hardness of the samples was measured by using a Vickers micro hardness tester with the load of 100 g. XRD indicated a single expanded austenite phase was formed at all treatment temperatures. Such a nitrogen and carbon supersaturated layer is precipitation free and possesses a high hardness and good corrosion resistance.

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Novel Compact Current Type Pulse Power Generator

  • Min, B.D.;Kim, J.H.;Pavlov, E.;Yoo, D.W.;Rim, G.H.
    • Proceedings of the KIPE Conference
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    • 2005.07a
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    • pp.529-531
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    • 2005
  • This paper proposes a compact pulse generator fur NOx removal application for diesel automotive. The rising time is important factor to increase NOx removal efficiency in pulsed corona discharge method. Manufacturing cost and compactness of the pulse power generator should be satisfied for automotive application. The proposed pulse power uses a low voltage thyristor, a pulse transformer with the function of saturated magnetic switch, and series connected general diodes as opening switch to satisfy that requirements. With 200 resistor load, the experiment results show that the output voltage is 21kV, the rising time is about 21ns, and the pulse width (FWHM) is about 42ns.

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Mechanical Characteristics of ZnO Thin Films on Si Substrates by Nano Indentation Technology (나노인덴테이션기법을 이용한 ZnO/Si 박막의 기계적 특성)

  • Yoon, Han-Ki;Jung, Hun-Chae;Sohn, Jong-Yoon;Yu, Yun-Sik
    • Proceedings of the KSME Conference
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    • 2004.04a
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    • pp.138-143
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    • 2004
  • Recently there has been a great world-wide interest in developing and characterizing new nano-structured materials. These newly developed materials are often prepared in limited quantities and shapes unsuitable for the extensive mechanical testing. The development of depth sensing indentation methods have introduced the advantage of load and depth measurement during the indentation cycle. In the present work, ZnO thin films are prepared on Si(111), Si(100) substrates at different temperatures by pulsed laser deposition(PLD) method. Because the potential energy in c-axis is low, the films always show c-axis orientation at the optimized conditions in spite of the different substrates. Thin films are investigated by X-ray diffractometer and Nano indentation equipment. From these measurements it is possible to get elastic modulus and hardness of ZnO thin films on Si substrates.

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Harmonic Compensation by A Flywheel System Based on Stator Flux-Oriented Vector Control of WRIM(Wound Rotor Induction Machine) (권선형 유도전동기의 고정자 자속기준 벡터제어에 의한 전원선의 고조파 보상)

  • Kim Yoon-Ho;Cho Yong-Hyun;Park Kyung-Soo;Jeong Yeon-Suk
    • Proceedings of the KIPE Conference
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    • 2001.07a
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    • pp.256-259
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    • 2001
  • An increase of pulsed power demand and load variation produce bad effect to power system. This causes power factor decrease. This paper proposes the excitation of the secondary side of wound rotor induction machine as one of harmonic compensation systems. In this paper, a harmonic compensation scheme based on stator flux-oriented vector control is proposed. By using the flux-oriented vector control, a voltage source PWM(Pulse Width Modulation) control scheme can be applied with fast dynamic response time. The designed control scheme is verified through simulation.

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High voltage Pulsed Power modulator for medical LINAC applications (의료용 선형가속기 응용분야를 위한 고전압 펄스 전원 모듈레이터)

  • Jo, Hyun-Bin;Song, Seung-Ho;Lee, Seung-Hee;Park, Su-Mi;Jang, Sung-Roc;Ryoo, Hong-Je
    • Proceedings of the KIPE Conference
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    • 2018.11a
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    • pp.101-103
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    • 2018
  • This paper describes -40kV high voltage solid state pulse power modulator (SSPPM) for driving a magnetron, which is used as a RF power source of LINAC for cancer treatment systems. In case of the medical LINAC, small size and light weight are required. The SSPPM is 92 liters in size and weighs 50 kg. In this paper, S-band 2.6 MW magnetron load experiment is conducted and impedance matching was applied to obtain a smooth output current. Finally, the experimental results is discussed and the reliability of SSPPM is verified.

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Fabrication of 5,000V, 4-Inch Light Triggered Thyristor using Boron Diffusion Process and its Characterization (Boron 확산공정을 이용한 5,000V, 4인치 광 사이리스터의 제작 및 특성 평가)

  • Park, Kun-Sik;Cho, Doohyung;Won, Jongil;Lee, Byungha;Bae, Youngseok;Koo, Insu
    • The Transactions of the Korean Institute of Power Electronics
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    • v.24 no.6
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    • pp.411-418
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    • 2019
  • Light-triggered thyristors (LTTs) are essential components in high-power applications, such as HVDC transmission and several pulsed-power applications. Generally, LTT fabrication includes a deep diffusion of aluminum as a p-type dopant to form a uniform p-base region, which needs careful concern for contamination and additional facilities in silicon semiconductor manufacturing factories. We fabricated 4-inch 5,000 V LTTs with boron implantation and diffusion process as a p-type dopant. The LTT contains a main cathode region, edge termination designed with a variation of lateral doping, breakover diode, integrated resistor, photosensitive area, and dV/dt protection region. The doping concentration of each region was adjusted with different doses of boron ion implantation. The fabricated LTTs showed good light triggering characteristics for a light pulse of 905 nm and a blocking voltage (VDRM) of 6,500 V. They drove an average on-state current (ITAVM) of 2,270 A, peak nonrepetitive surge current (ITSM) of 61 kA, critical rate of rise of on-state current (di/dt) of 1,010 A/㎲, and limiting load integral (I2T) of 17 MA2s without damage to the device.

Design of Low-Noise and High-Reliability Differential Paired eFuse OTP Memory (저잡음 · 고신뢰성 Differential Paired eFuse OTP 메모리 설계)

  • Kim, Min-Sung;Jin, Liyan;Hao, Wenchao;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.10
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    • pp.2359-2368
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    • 2013
  • In this paper, an IRD (internal read data) circuit preventing the reentry into the read mode while keeping the read-out DOUT datum at power-up even if noise such as glitches occurs at signal ports such as an input signal port RD (read) when a power IC is on, is proposed. Also, a pulsed WL (word line) driving method is used to prevent a DC current of several tens of micro amperes from flowing into the read transistor of a differential paired eFuse OTP cell. Thus, reliability is secured by preventing non-blown eFuse links from being blown by the EM (electro-migration). Furthermore, a compared output between a programmed datum and a read-out datum is outputted to the PFb (pass fail bar) pin while performing a sensing margin test with a variable pull-up load in consideration of resistance variation of a programmed eFuse in the program-verify-read mode. The layout size of the 8-bit eFuse OTP IP with a $0.18{\mu}m$ process is $189.625{\mu}m{\times}138.850{\mu}m(=0.0263mm^2)$.

Design of High Average Power Pulse Transformer for 30-MW Klystron of L-Band Linac Application (산업용 선형가속기 시스템 적용을 위한 30-MW 클라이스트론용 고 평균전력 펄스 트랜스포머의 설계)

  • Jang, S.D.;Son, Y.G.;Gwon, S.J.;Oh, J.S.;Bae, Y.S.;Lee, H.G.;Moon, S.I.;Kim, S.H.;Cho, M.H.;NamKung, W.
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1550-1551
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    • 2006
  • An L-band linear accelerator system for e-beam sterilization is under design for bio-technology application. The klystron-modulator system as RF microwave source has an important role as major components to offer the system reliability for long time steady state operation. A PFN line type pulse generator with a peak power of 71.5-MW, $7{\mu}s$, 285 pps is required to drive a high-power klystron. The high power pulse transformer has a function of transferring pulse energy from a pulsed power source to a high power load. The pulse transformer producing a pulse with a peak voltage of 275 kV is required to produce 30-MW peak and 60 kW average RF output power at the frequency of 1.3-GHz. We have designed the high power pulse transformer with 1:13 step-up ratio. The peak and average power capability is 71.5-MW (275 kV, 260 A at load side with $7{\mu}s$ pulse width) and 130 kW, respectively. In this paper, we present a system overview and initial design results of the high power pulse transformer.

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Parameter Evaluation of High-Power Pulse Transformer for L-Band 30-MW Klystron (L-band 30-MW 클라이스트론용 고출력 펄스트랜스포머의 파라미터 평가)

  • Jang, S.D.;Son, Y.G.;Kwon, S.J.;Oh, J.S.;Kim, S.H.;Yang, H.R.;Moon, S.I.;Kwon, B.H.;Cho, M.H.;NamKung, W.
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1079-1081
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    • 2007
  • An L-band Linear Accelerator System for E-beam sterilization is under construction for bio-technology application. The klystron-modulator system as an RF microwave source has an important role as major components to offer the system reliability for long time steady-state operations. A PFN line type pulse generator with a peak power of 71.5-MW, $7\;{\mu}s$, 285 pps is required to drive a high-power klystron. The high power pulse transformer has a function of transferring pulse energy from a pulsed power source to a high power load. The pulse transformer producing a pulse with a peak voltage of 275 kV is required to produce 30-MW peak and 60 kW average RF output power at the frequency of 1.3-GHz. We have designed the high power pulse transformer with 1:13 step-up ratio. The peak and average power capability is 71.5-MW (275 kV, 260 A at load side with $7\;{\mu}s$ pulse width) and 130 kW, respectively. In this paper, we present measurements and its analysis on the design parameters, and an initial test result as well as a design concept on the high-power pulse transformer.

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