• Journal of the Korean Vacuum Society
• /
• v.17 no.5
• /
• pp.455-460
• /
• 2008

In recent years, there has been highly interestedin pulsed laser deposition (PLD) method for fabrication of the organic thin films, as an alternative to conventional fabrication method such as vacuum evaporation and spin coating techniques. In this study, organic thin films of $Alq_3$ (aluminato-tris-8-hydroxyquinolate) and TPD for organic light emitting diodes (OLED) were deposited by PLD using KrF excimer ($\lambda$=278 nm) laser in nitrogen atmosphere. Deposited films were evaluated by photoluminescence(PL), Fourier-transform Infrared Spectroscopy (FT-IR) to study the effect of the laser and $N_2$ atmosphere parameters on the structural and optical properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.362-364
• /
• 2001

The pulsed laser deposition(PLD) technology was used for the deposition of phosphor substance, Gd$_2$O$_3$on commercial glass. An Nd:YAG laser was employed for the deposition (wavelength 266nm, energy up to 100mJ/pu1se, pulse duration is 5ns and repetition rate 10 Hz). With respect to films grown by conventional PLD, this study exhibited the condition at normal temperature. Experiments were done without any reactive gas at a pressure of 10$^{-5}$ ~10$^{-6}$ Torr using second harmonic(λ=532 nm) and fourth harmonic(λ=266 nm) Nd:YAG laser. Analyses of the deposited material grown are performed by EDX, AFM, SEM, PL meseurements.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.6
• /
• pp.231-234
• /
• 2003

ZnO thin films on (100) p-type silicon substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. The influence of the deposition parameters, such as oxygen pressure, substrate temperature and laser energy density variation on the properties of the grown film, was studied. The experiments were performed for oxygen gas flow rate of 100~700 sccm and substrate temperatures in the range of 200~$500^{\circ}C$. We investigated the structural and morphological properties of ZnO thin films using X-ray diffraction(XRD), scanning electron microscopy(SEM) and atomic force microscopy(AFM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.1030-1033
• /
• 2002

ZnO thin films on (100)p-type silicon substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YGA laser with a wavelength of 266nm. The influence of the deposition parameters, such as oxygen pressure, substrate temperature and laser energy density variation on the properties of the grown film, was studied. The experiments were performed for substrate temperatures in the range of $200{\sim}500^{\circ}C$ and oxygen pressure in the range of $10^{-2}{\sim}10^2mTorr$. We investigated the structural, morphological and optical properties of ZnO thin films using X-ray diffraction(XRD), atomic force microscopy(AFM), photoluminescence(PL).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.3
• /
• pp.246-250
• /
• 2001

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of355 nm. In order to investigate the emission properties of ZnO thin films, Pl measurements with an Ar ion laser a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited Pl bands centers around 390, 510 and 640 nm, labeled near ultra-violet(UV), green and orange bands. Structural properties of ZnO thin films are analyzed with X-ray diffraction(XRD).

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.54 no.3
• /
• pp.103-108
• /
• 2005

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. Before post-annealing treatment in the oxygen ambient, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $300\~450^{\circ}C$ and oxygen gas flow rate of $100\~700\;sccm$. In order to investigate the effect of post-annealing treatment of ZnO thin films, films have been annealed at various temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM) and the optical properties of the ZnO were characterized by photoluminescence(PL).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.532-534
• /
• 2000

Si thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was varied from 1 to 3 Torr. After deposition, Si thin film has been annealed again at nitrogen ambient. Strong violet-indigo photoluminescence have been observed from Si thin film annealed in nitrogen ambient gas. As increasing environmental gas pressure, weak green and red emissions from annealed Si thin films also observed by photoluminescence.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.6
• /
• pp.403-409
• /
• 1999

We fabricated diamond like carbon (DLC) thin films using pulsed laser deposition (PLD) method. Among many deposition parameters, the effects of the deposition temperature and the laser energy density were investigated. Structural properties of the films were studied by Raman spectroscopy. The surface morphologies and cross-section imagies of the films were investigated by atomic force microscopy (AFM) and scanning electron microscopy (SEM) respctively. DLC thin films fabricated at $12 J/cm^2$ of a laser energy density and $300^{\circ}C$ of a deposition temperature showed the best quality.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.59 no.1
• /
• pp.113-115
• /
• 2010

In this study, ZnO films have been grown on PES(polyethersu]fone) substrate by PLD(pulsed laser deposition) and characterized as a change of laser density and substrate temperature. Growing conditions were changed with substrate temperatures ranging from 50 to $200^{\circ}C$ and laser densities ranging from $0.2\sim0.4 J/cm^2$. Optical and structural properties were measured by XRD, SEM, AFM, PL measurement.

• Journal of the Korean Magnetics Society
• /
• v.22 no.4
• /
• pp.147-156
• /
• 2012

Recently, there have been considerable interests in various thin film growth techniques with atomically controllable thickness. Among them, atomically controlled pulsed laser deposition (PLD) technique is quite popular. We have developed advanced thin film growth technique using PLD and Reflection high energy electron diffraction (RHEED). Using the technique, the growth of oxide thin films with the precisely controllable thickness has been demonstrated. In addition, our technique can be applied to high quality thin film growth with minimal defect and bulk chemical composition. In this paper, our recent progresses as well as the current research trend on oxide thin films will be summarized.