• Title/Summary/Keyword: Pulsed laser ablation

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Magnetic Properties of Heteroepitaxial $Y_{3}Fe_{5)O_{12}$ Films Grown by a Pulsed Laser Ablation Technique (펄스 레이저 증착기술에 의한 $Y_{3}Fe_{5)O_{12}$ 에피택셜 박막제조)

  • Yang, C.J.;Kim, S.W.
    • Journal of the Korean Magnetics Society
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    • v.5 no.2
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    • pp.128-133
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    • 1995
  • Yttrium Iron Garnet($Y_{3}Fe_{5)O_{12}$) films have been succsssfully grown on(111)GGG wafer by KrF excimer laser ablation of stoichiometric garnet target at the oxygen partial pressure, $P(O_{2}$, ranging 20 to 500 mTorr. During the deposition of the films the substrate temperature was maintained at $700^{\circ}C$ and the laser beam energy density at $7.75\;J/cm_{2}$. Microstructure, composition and magnetic properties of the films obtained were investigated as a function of oxygen pressure and thickness of the films. Epitaxial films with a dense and a smooth surface were reproducible at a low oxygen pressure. The films of $2.75\;{\mu}$ min thickness deposited at 20 mTorr of $P(O_{2})$ showed $4{\pi}M_{s}$ of 1500 Gauss and $H_{c}$ of 3 Oe after annealing at $800\;^{\circ}C$ for 20 minutes. As-deposited films of $0.8\;\mu\textrm{m}$ in thickness exhibited the $4{\pi}M_{s}$ of 1730 Gauss and $H_{c}$ of 7 Oe. The magnetic properties of the films obtained were almost identical to those of a single crystal YIG.

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Dielectric Characteristics of $Al_2O_3$ Thin Films Deposited by Reactive Sputtering

  • Park, Jae-Hoon;Park, Joo-Dong;Oh, Tae-Sung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.100-100
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    • 2000
  • Aluminium oxide (Al2O3) films have been investigated for many applications such as insulating materials, hard coatings, and diffusion barriers due to their attractive electrical and mechanical properties. In recent years, application of Al2O3 films for dielectric materials in integrated circuits as gates and capacitors has attracted much attention. Various deposition techniques such as sol-gel, metalorganic decomposition (MOD), sputtering, evaporation, metalorganic chemical vapor deposition (MOCVD), and pulsed laser ablation have been used to fabricate Al2O3 thin films. Among these techniques, reactive sputtering has been widely used due to its high deposition rate and easy control of film composition. It has been also reported that the sputtered Al2O3 films exhibit superior chemical stability and mechanical strength compared to the films fabricated by other processes. In this study, Al2O3 thin films were deposited on Pt/Ti/SiO/Si2 and Si substrates by DC reactive sputtering at room temperature with variation of the Ar/O2 ratio in sputtering ambient. Crystalline phase of the reactively sputtered films was characterized using X-ray diffractometry and the surface morphology of the films was observed with Scanning election microscopy. Effects of Th Ar/O2 ratio characteristics of Al2O3 films were investigated with emphasis on the thickness dependence of the dielectric properties. Correlation between the dielectric properties and the microstructure was also studied

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Photoelectric Properties of PbTe/CuPc Bilayer Thin Films (PbTe/CuPc 이층박막의 광전 특성)

  • Lee, Hea-Yeon;Kang, Young-Soo;Park, Jong-Man;Lee, Jong-Kyu;Jeong, Jung-Hyun
    • Journal of Sensor Science and Technology
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    • v.7 no.1
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    • pp.67-72
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    • 1998
  • The crystallized CuPc and PbTe films are formed by thermal evaporation and pulsed ArF excimer laser ablation. Structural and electrical properties of thin film is observed by XRD and current-voltage(I-V) curves. From XRD analysis, both PbTe and CuPc thin films show a-axis oriented structure. For the measurement of photovoltaic effect, the transverse current-voltage curve of CuPc/Si, PbTe/Si and PbTe/CuPc/Si junctions have been analyzed in the dark and under illumination. The PbTe/CuPc/Si junction exthibits a strong photovoltaic characteristics with short circuit current($J_{sc}$) of $25.46\;mA/cm^{2}$ and open-circuit voltage($V_{oc}$) of 170 mV. Quantum efficiency and power conversion efficiency are calculated to be 15.4% and $3.46{\times}10^{-2}$, respectively. Based on the results of QE and ${\eta}$, the photocurrent process of PbTe/CuPc/Si junction can be explained as following three effective steps; photocarrier generation in the CuPc layer, carrier separation at PbTe/CuPc interface, and finally a transportation of electrons through the PbTe layer.

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EFFECTS OF ER:YAG LASER ABLATION ON THE DENTIN (Er:YAG 레이저를 이용한 치아삭제 효과)

  • Choi, Nam-Ki;Yang, Kyu-Ho;Park, Sang-Won;Kim, Ok-Joon
    • Journal of the korean academy of Pediatric Dentistry
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    • v.28 no.4
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    • pp.683-693
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    • 2001
  • The purpose of this study was to evaluate the effects of Er:YAG laser on cutting efficacy and its histologic findings. Dentin specimens of human premolars and molars were used and irradiated by Er:YAG laser with noncontact handpiece type delivery system under different treatment condition of irradiation time. Cavity pattern and volume were evaluated to determine the cutting efficacy and following results were obtained. 1. Cutting volume of sound dentin was getting larger with time immersed in water increase 2. With the condition of irradiation (150mJ, 10Hz, 30sec), surface irregularity was more increased in sound dentin comparing to carious dentin. For the light microscopic examination, dentinal tubules were opened and ash flecks and cracks were noted with inconsistence of dentinal tubules. 3. In case of 30 sec. irradiation in carious dentin, dark zone was limited to small focus whereas 1 min. irradiation, more wider, and cracks were noted in the perpendicular to direction of dentinal tubules. For the 2 min. irradiation, cavity was the widest and more cracks were found.

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High-Performance Amorphous Multilayered ZnO-SnO2 Heterostructure Thin-Film Transistors: Fabrication and Characteristics

  • Lee, Su-Jae;Hwang, Chi-Sun;Pi, Jae-Eun;Yang, Jong-Heon;Byun, Chun-Won;Chu, Hye Yong;Cho, Kyoung-Ik;Cho, Sung Haeng
    • ETRI Journal
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    • v.37 no.6
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    • pp.1135-1142
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    • 2015
  • Multilayered ZnO-$SnO_2$ heterostructure thin films consisting of ZnO and $SnO_2$ layers are produced by alternating the pulsed laser ablation of ZnO and $SnO_2$ targets, and their structural and field-effect electronic transport properties are investigated as a function of the thickness of the ZnO and $SnO_2$ layers. The performance parameters of amorphous multilayered ZnO-$SnO_2$ heterostructure thin-film transistors (TFTs) are highly dependent on the thickness of the ZnO and $SnO_2$ layers. A highest electron mobility of $43cm^2/V{\cdot}s$, a low subthreshold swing of a 0.22 V/dec, a threshold voltage of 1 V, and a high drain current on-to-off ratio of $10^{10}$ are obtained for the amorphous multilayered ZnO(1.5nm)-$SnO_2$(1.5 nm) heterostructure TFTs, which is adequate for the operation of next-generation microelectronic devices. These results are presumed to be due to the unique electronic structure of amorphous multilayered ZnO-$SnO_2$ heterostructure film consisting of ZnO, $SnO_2$, and ZnO-$SnO_2$ interface layers.

열분해법을 이용한 실리콘 나노입자 형성과정 수치해석 연구

  • U, Dae-Gwang;Ha, Su-Hyeon;Kim, Myeong-Jun;Hang, Zhang;Kim, Tae-Seong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.117-117
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    • 2010
  • 나노입자 제조 기술이 점차 발전하면서 금속산화물, 반도체용 및 태양전지용, 신소재 등 다양한 응용분야에 사용하고 있다. 따라서 이와 같은 나노입자 제조방법으로는 펄스 레이저 용사법(pulsed laser ablation), 플라즈마 아크 합성법(plasma arc synthesis), 열분해법(pyrolysis), plasma-enhanced chemical vapor deposition (PECVD)법 등과 같은 기상공정이 많이 사용되고 있다. 기상공정은 기존의 공정에 비해 고순도 입자의 대량 생산, 다성분 입자의 화학적 균질성 유지, 비교적 간단하고 깨끗한 공정 등의 장점을 가지고 있다. 기상공정에서 일반적인 입자 형성 메커니즘은 기체 상태의 화학 물질이 물리적 공정 혹은 화학 반응에 의해 과포화상태에 도달하게 되며, 이 때 동질 핵생성(homogeneous nucleation)이 일어나고 생성된 핵(nuclei)에 기체가 응축되고 충돌, 응집하면서 입자는 성장하게 된다. 열분해법은 실리콘 나노입자를 생산하는 기상공정 중 하나이다. 일반적으로 열분해 공정은 지속적으로 열이 가해지는 반응기 내에 반응기체인 $SiH_4$을 주입하고, 운반기체는 He, $H_2$, Ar, $N_2$ 등을 사용하였을 때, 높은 열로 인해 $SiH_4$가 분해되며, 이 때 가스-입자 전환 현상(gas to particle conversion)이 일어나 실리콘 입자가 형성된다. 그러나 입자 형성과정은 $SiH_4$ 농도, 유량, 작동 압력, 온도 등 매우 다양한 요소에 영향을 받는다. 고, 복잡한 화학반응 메커니즘에 의해 명확히 규명되지는 못하고 있다. 이에 본 연구에서는 복잡한 화학반응을 해석하는 상용코드 CHEMKIN 4.1.1을 이용하여 열분해 반응기 내에서의 실리콘 입자 형성, 성장, 응집, 전송 모델을 만들고 이를 수치해석하였다. 표면 반응, 응집, 전송에 의한 입자 성장 메커니즘을 포함하고 있는 aerosol dynamics model을 method of moment법으로 해를 구하였으며, 이를 실험 결과와 비교하여 모델링을 검증하였다. 또한 반응기의 온도, 압력, 가스 농도, 유량 등의 요소를 고려하여 실리콘 나노입자를 형성하는 최적의 조건을 연구하였다.

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Comparative Study of the Ablation Rates of Single-pulsed Er:YAG Laser Irradiation on Dentin and Enamel (상아질과 법랑질에 대한 Er:YAG 레이저의 일회 조사시 다양한 에너지 수준에 따른 삭제율에 관한 연구)

  • Yang, Seung-Jae;Kim, Ki-Suk
    • Journal of Oral Medicine and Pain
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    • v.24 no.4
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    • pp.411-420
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    • 1999
  • 과거 수십년간 여러 가지 다른 레이저를 이용한 치아경조직에 대한 몇 가지의 생체외적 실험이 이루어졌다. 그러나 그 결과는 좋지 못하였다. 그러한 주 문제는 열작용이었다. 미국 식품의약국(FDA)에서 사용하도록 허가된 Er:YAG 레이저는 인간의 생체 치아를 삭제할 수 있는 최초의 레이저이다. 치아 삭제가 열작용의 원리에 의해 이루어지기는 하지만, 경조직의 미세폭발에 의하기 때문에 주변의 경조직과 연조직에 미치는 열작용은 거의 없다. 본 연구에서는 최근 국내에서 최초로 개발된 Er:YAG 레이저를 사용하여, 상아질과 법랑질에 일회 조사시 다양한 에너지 수준에 따른 삭제율을 연구하였다. 건조된 10개의 치아가 선택되었으며, 각각은 에폭시 레진에 포매되어 경화되었다. 그 후 다섯 개의 치아는 저속회전 다이아몬드 휠로써 교합면 삭제를 통해 상아질이 노출되었으며, 나머지 다섯 개의 치아는 협측 혹은 설측을 삭제하여 평평한 표면의 법랑질을 만들도록 하였다. 준비된 상아질과 법랑질 치아의 표면은 각각의 에너지 수준의 레이저를 조사할 6개의 구획으로 나누어 표본으로 삼았다. 상아질과 법랑질 표본은 에너지 수준에 따른 5개의 실험군(40 mJ, 80 mJ, 120 mJ, 160 mJ, 200 mJ)으로 나누어 그 삭제율을 분석하였다. 삭제된 부피는 삼차원 영상 표면분석기로 측정하였으며, 통계적으로 분석하였으며, 그 결과는 다음과 같다. 1. 상아질과 법랑질간의 삭제율의 차이는 통계적으로 유의한 차이가 있었다(p<0.0001). 2. 에너지 수준에 따른 삭제율의 차이는 통계적으로 유의한 차이가 있었다(p<0.0001). 3. 각각의 에너지 수준에서 상아질과 법랑질간의 삭제율의 차이는 통계적으로 유의한 차이가 있었으나(p<0.05), 40 mJ과 80 mJ에서는 유의한 차이를 보이지 않았다. 4. 상아질에서 각각의 에너지 수준 간의 삭제율이 유의한 차이를 보였으나(p<0.01), 160 mJ과 200 mJ간에는 삭제율의 유의한 차이가 없었으며, 법랑질에서도 각각의 에너지 수준 간의 삭제율이 유의한 차이를 보였으나(p<0.01), 120 mJ, 160 mJ, 200 mJ 간에 유의한 차이를 보이지 않았다. 본 연구에서는 건조된 치아에 다양한 에너지 수준의 Er:YAG 레이저를 적용했을 경우 상아질과 법랑질의 삭제 부피를 연구하여 정량화 및 통계적 분석을 하였다. 그 결과, Er:YAG 레이저는 치아경조직의 삭제에 매우 유용하였으며, 앞으로도 이를 임상적으로 널리 이용하기까지 좀더 다양하고 심화된 연구가 필요할 것으로 사료된다.

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Trend in Research and Application of Hard Carbon-based Thin Films (탄소계 경질 박막의 연구 및 산업 적용 동향)

  • Lee, Gyeong-Hwang;Park, Jong-Won;Yang, Ji-Hun;Jeong, Jae-In
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2009.05a
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    • pp.111-112
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    • 2009
  • Diamond-like carbon (DLC) is a convenient term to indicate the compositions of the various forms of amorphous carbon (a-C), tetrahedral amorphous carbon (ta-C), hydrogenated amorphous carbon and tetrahedral amorphous carbon (a-C:H and ta-C:H). The a-C film with disordered graphitic ordering, such as soot, chars, glassy carbon, and evaporated a-C, is shown in the lower left hand corner. If the fraction of sp3 bonding reaches a high degree, such an a-C is denoted as tetrahedral amorphous carbon (ta-C), in order to distinguish it from sp2 a-C [2]. Two hydrocarbon polymers, that is, polyethylene (CH2)n and polyacetylene (CH)n, define the limits of the triangle in the right hand corner beyond which interconnecting C-C networks do not form, and only strait-chain molecules are formed. The DLC films, i.e. a-C, ta-C, a-C:H and ta-C:H, have some extreme properties similar to diamond, such as hardness, elastic modulus and chemical inertness. These films are great advantages for many applications. One of the most important applications of the carbon-based films is the coating for magnetic hard disk recording. The second successful application is wear protective and antireflective films for IR windows. The third application is wear protection of bearings and sliding friction parts. The fourth is precision gages for the automotive industry. Recently, exciting ongoing study [1] tries to deposit a carbon-based protective film on engine parts (e.g. engine cylinders and pistons) taking into account not only low friction and wear, but also self lubricating properties. Reduction of the oil consumption is expected. Currently, for an additional application field, the carbon-based films are extensively studied as excellent candidates for biocompatible films on biomedical implants. The carbon-based films consist of carbon, hydrogen and nitrogen, which are biologically harmless as well as the main elements of human body. Some in vitro and limited in vivo studies on the biological effects of carbon-based films have been studied [$2{\sim}5$].The carbon-based films have great potentials in many fields. However, a few technological issues for carbon-based film are still needed to be studied to improve the applicability. Aisenberg and Chabot [3] firstly prepared an amorphous carbon film on substrates remained at room temperature using a beam of carbon ions produced using argon plasma. Spencer et al. [4] had subsequently developed this field. Many deposition techniques for DLC films have been developed to increase the fraction of sp3 bonding in the films. The a-C films have been prepared by a variety of deposition methods such as ion plating, DC or RF sputtering, RF or DC plasma enhanced chemical vapor deposition (PECVD), electron cyclotron resonance chemical vapor deposition (ECR-CVD), ion implantation, ablation, pulsed laser deposition and cathodic arc deposition, from a variety of carbon target or gaseous sources materials [5]. Sputtering is the most common deposition method for a-C film. Deposited films by these plasma methods, such as plasma enhanced chemical vapor deposition (PECVD) [6], are ranged into the interior of the triangle. Application fields of DLC films investigated from papers. Many papers purposed to apply for tribology due to the carbon-based films of low friction and wear resistance. Figure 1 shows the percentage of DLC research interest for application field. The biggest portion is tribology field. It is occupied 57%. Second, biomedical field hold 14%. Nowadays, biomedical field is took notice in many countries and significantly increased the research papers. DLC films actually applied to many industries in 2005 as shown figure 2. The most applied fields are mold and machinery industries. It took over 50%. The automobile industry is more and more increase application parts. In the near future, automobile industry is expected a big market for DLC coating. Figure 1 Research interests of carbon-based filmsFigure 2 Demand ratio of DLC coating for industry in 2005. In this presentation, I will introduce a trend of carbon-based coating research and applications.

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