• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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• pp.139-139
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• 2011

DC magnetron sputtering과 DC pulsed magnetron sputtering을 이용하여 공정 압력별, $O_2$ 분압별, 온도등의 증착조건에 따른 IGZO 박막의 특성을 조사하였다. Working pressure 따른 deposition rate 측정한 결과 동일 파워 적용 시 DC magnetron sputtering 대비하여 DC pulsed magnetron sputtering 은 약 84% 수준에 머물렀으며, IGZO 박막 내에 $O_2$의 분압비가 증가함에 따라 투과도는 단파장 영역에서 장파장 영역으로 갈수록 상승 경향을 보였다. 캐리어 농도와 이동도 등 전기적 특성도 증가하는 경향을 보였다. 온도에 따른 전기적 특성을 비교 해 본 결과 상온과 $150^{\circ}C$ 영역에서는 유의차가 없었으며, DC pulsed magnetron sputtering의 경우 $50^{\circ}C$ 영역에서 변곡점이 형성됨을 알수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.256-256
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• 2013

기존에 사용되어 오던 DCMS (DC magnetron sputtering)과 HPPMS (high-power pulsed magnetron sputtering)에 비해 MPP를 이용한 magnetron sputtering은 높은 증착률을 가지고 있으며, 증착된 박막의 특성도 우수하다고 알려져 있다. 본 연구에서는 최대 출력 700 V, 12.5 A, 100 kHz)의 사양을 가지는 DC, pulse DC, modulated pulsed DC의 세 종류로 변환이 가능한 Power supply를 제작하여 Cr 박막을 증착하였다. 증착시 혼합기체 Ar/$N_2$를 사용하였으며, 박막의 특성을 sputtering power 종류별로 비교 평가하였다. 실험 결과얻어진 박막을 SEM과 XRD를 이용하여 분석하였다.

• 한국표면공학회지
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• 제47권4호
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• pp.168-173
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• 2014

The paper presents the comparative results of TiAlN coatings deposited by DC and pulsed DC asymmetric bipolar magnetron sputtering systems. The results show that, with the decreasing duty cycle and increasing pulse frequency, the coating morphology changes from a columnar to a dense structure, with finer grains. Pulsed sputtered TiAlN coatings showed higher hardness, higher residual stress, and smaller grain sizes than dc prepared TiAlN coatings. Moreover residual stress of pulsed sputtered TiAlN coatings increased on increasing pulse frequency. Meanwhile, the surface roughness decreased continuously with increasing pulsed DC frequency up to 50 kHz.

• 한국표면공학회지
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• 제48권4호
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• pp.136-141
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• 2015

The paper presents the comparative results of NbN coatings deposited by DC and pulsed DC asymmetric bipolar magnetron sputtering systems. The results show that, with the decreasing duty cycle and increasing pulse frequency, the coating morphology changes from a columnar to a dense structure, with finer grains. The Pulsed sputtered NbN coatings showed higher hardness, higher residual stress, and smaller grain sizes than those of DC prepared NbN coatings. Moreover residual stress of pulsed sputtered NbN coatings increased on increasing pulse frequency. Meanwhile, the surface roughness decreased continuously with increasing pulsed DC frequency up to 50 kHz.

• 한국표면공학회지
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• 제52권4호
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• pp.211-226
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• 2019

Optical thin films were deposited by using a reactive pulsed DC magnetron sputtering method with a high density plasma(HDP). In this study, the effect of sputtering process conditions on the microstructure and optical properties of $SiO_2$, $TiO_2$, $Nb_2O_5$ thin films was clarified. These thin films had flat and dense microstructure, stable stoichiometric composition at the optimal conditions of low working pressure, high pulsed DC power and RF power(HDP). Also, the refractive index of the $SiO_2$ thin films was almost constant, but the refractive indices of $TiO_2$ and $Nb_2O_5$ thin films were changed depending on the microstructure of these films. Antireflection films of $Air/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/Glass$ structure designed by Macleod program were manufactured by our developed sputtering system. Transmittance and reflectance of the manufactured multilayer films showed outstanding value with the level of 95% and 0.3%, respectively, and also had excellent durability.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2017년도 춘계학술대회 논문집
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• pp.103.2-103.2
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• 2017

Nanocrystalline HfN coatings were prepared by reactively sputtering Hf metal target with N2 gas using a magnetron sputtering system operated in DC and ABPP (asymmetric bipolar pulsed plasma) condition with various duties and frequencies. The effects of duty and frequency, ranging from 75 to 100 % and 5 to 50 kHz, on the coating microstructure, crystallographic and mechanical properties were systematically investigated with FE-SEM, AFM, XRD and nanoindentation. The results show that pulsed plasma has a significant influence on coating microstructure and mechanical properties of HfN coatings. Coating microstructure evolves from the columnar structure to a highly dense one as duty decreases. Average grain size and nano hardness of HfN coatings were also investigated with various pulsed conditions.

• 전력전자학회논문지
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• 제18권6호
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• pp.593-600
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• 2013

The asymmetric pulsed DC reactive magnetron sputtering system is widely used for the high quality plasma sputtering process such as a thin film deposition. In asymmetric pulsed DC power supply a reverse voltage is applied to the target periodically to minimize arc discharging effect. When sputtering in the mid-frequency range (20-350 kHz), the periodic target voltage reversals suppress arc formation at the target and provide long-term process stability. Thus, high quality, defect-free coatings of these materials can now be deposited at competitive rates. In this paper, a new style asymmetric pulsed DC power supply including mid-transformer is presented. In the proposed, an energy recovery circuit is adopted to reduce the mutual inductance of the transformer. As a result, the system dynamics of the voltage control loop is increased highly and the non-linear voltage boosting effect of the conventional system is removed. This work was proved through simulation and laboratory based experimental study.

• 한국세라믹학회지
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• 제48권5호
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• pp.342-347
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• 2011

Nanocrystalline TiN films were deposited on Si(100) substrate using asymmetric pulsed DC reactive magnetron sputtering. We investigated the growing behavior and the structural properties of TiN films with change of duty cycle and pulsed frequency. Grain size of TiN films were decreased from 87.2 nm to 9.8 nm with decrease of duty cycle. The $2{\theta}$ values for (111) and (200) crystallographic planes of the TiN films were also decreased with decrease of duty cycle. This shift in $2{\theta}$ could be attributed to compressive stress in the TiN coatings. Thus, the change of plasma parameter has a strong influence not only on the microstructure but also on the residual stresses of TiN films.

• 한국표면공학회지
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• 제52권6호
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• pp.342-349
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• 2019

Titanium nitride(TiN) thin films have been deposited on PEN(Polyethylene naphthalate) substrate by reactive RF(13.56 MHz) magnetron sputtering in a 25% N₂/Ar mixed gas atmosphere. The pulsed DC bias voltage of -50V on substrates was applied with a frequency of 350 kHz, and duty ratio of 40%(1.1 ㎲). The effects of pulsed DC substrate bias voltage on the crystallinity, color, electrical properties of TiN_x films have been investigated using XRD, SEM, XPS and measurement of the electrical properties such as electrical conductivity, carrier concentration, mobility. The deposition rates of TiN_x films was decreased with application of the pulsed DC substrate bias voltage. The TiN_x films deposited without and with pulsed bias of -50V to substrate exhibits gray and gold colors, respectively. XPS depth profiling revealed that the introduction of the substrate bias voltage resulted in decreasing oxygen concentration in TiN_x films, and increasing the electrical conductivities, carrier concentration, and mobility to about 10 times, 5 times, and 2 times degree, respectively.

• 한국전기전자재료학회논문지
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• 제26권1호
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• pp.44-48
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• 2013

Niobium oxide($Nb_2O_5$) films were deposited on p-type Si wafers at room temperature using in-line pulsed-DC magnetron sputtering system with various frequencies. The different duty ratios were obtained by varying the frequency of pulsed DC power from 100 to 300 kHz at the fixed reverse time of $1.5{\mu}s$. From the thickness of the sputtered $NbO_x$ films, it was possible to obtain much higher deposition rate in case of pulsed-DC sputtering than RF sputtering. However, the similar leakage currents and structural characteristics were obtained from the metal-insulator-semiconductor(MIS) structure fabricated with the $NbO_x$ films and the x-ray photoelectron spectroscopy(XPS) results in spite of the different deposition rates. From the experimental results, the $NbO_x$ films sputtered by pulsed-DC sputtering are expected to be used in the fabrication process instead of RF sputtering.