• Title/Summary/Keyword: Pulse plasma

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Effects of Nitrogen Contents on the Nitriding Characteristics of the Micro-Pulse Plasma and Post Oxidation Treated SCM440 Steel (SCM440강의 마이크로 펄스 플라즈마 질화 및 후산화처리시 질소농도에 따른 특성변화)

  • Lee, S.K.;Chung, I.S.;Lee, J.S.
    • Journal of the Korean Society for Heat Treatment
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    • v.12 no.2
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    • pp.117-128
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    • 1999
  • This study was carried out to investigate the surface characteristics of SCM440 steel nitrided with various nitrogen contents for 7 hours at $520^{\circ}C$ by using micro-pulse plasma nitriding apparatus of hot wall type. The effects of oxidation treatment was also investigated on plasma nitrided in 30% nitrogen and post oxidized SCM440 steel at $500^{\circ}C$ in $H_2O$ atmosphere. The ${\gamma}^{\prime}-Fe_4N$ and ${\varepsilon}-Fe_{2-3}N$ phases were detected in compound layer of the nitrided steel. As the content of nitrogen in plasma gas increased with 30, 50, 70% on the micro-pulse plasma nitriding for SCM440 steel, the thickness of compound, diffusion layer and the surface hardness were increased. From the wear test results, the best wear resistance was appeared in the condition of ductile ${\gamma}^{\prime}-Fe_4N$ phase formed specimen at 30% nitrogen, whereas that of the treated with 50% and 70% nitrogen decreased owing to the exfoliation of brittle ${\varepsilon}-Fe_{2-3}N$ phase in the compound layer. On the nitrided and subsequently oxidized SCM440 steel, the surface layer consisted of $Fe_3O_4$, ${\gamma}^{\prime}-Fe_4N$, and ${\varepsilon}-Fe_{2-3}N$ phases. In these treatments, the dissolution of nitrides affect hardness and hardening depth in compound and diffusion layers. For the nitrided in 30% nitrogen and post oxidized specimen at $500^{\circ}C$ for 1 hour, the wear resistance was lower than that of the only nitrided one in 30% nitrogen but higher than those of the nitrided ones in 50 and 70% nitrogen.

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The Study on the Mutual Characteristics Between Transmitting Efficiency of Pulse Energy and Wall Plug Consumed Power of Non-Thermal Plasma (저온 플라즈마의 펄스에너지 전송효율과 Wall Plug 소비전력과의 상호 특성에 관한 연구)

  • Jeong, Jong-Han;Jeong, Hyeon-Ju;Kim, Hwi-Yeong;Jeong, Yong-Ho;Song, Geum-Yeong;Kim, Geun-Yong;Kim, Hui-Je
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.10
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    • pp.506-510
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    • 2002
  • In this paper, we study on the mutual characteristics between transmitting efficiency of pulse energy and wall plug consumed power of non-thermal Plasma for removing environmental pollutive gas of coal plant. To obtain high pulse energy of our system, we used MPC(magnetic pulse compressor) of power switch and tested their characteristics by adjusting electrode length of reactor and charging voltage in capacitor. As a result, we obtained consumed power of wall plug and a compressed pulse of voltage 110kV, rising time 500ns. Impedance of load on increasing electrode length was decreased, but electrical efficiency was increased. These results indicate we can control critical voltage of pulse corona and electrical efficiency of economic cost in power plant.

Analysis of a modulated pulse plasma system by a triple probe and ICCD-OES (삼중 프로브와 ICCD-OES를 이용한 modulated pulse plasma의 분석)

  • Choe, Ji-Seong;Yang, Won-Gyun;Ju, Jeong-Hun;Jang, Dong-Su;Lee, Jeong-Jung
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.11a
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    • pp.192-193
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    • 2012
  • 2차 플라즈마를 사용하지 않고도 스퍼터링된 입자의 높은 이온화율을 얻을 수 있는 고전력 마그네트론 스퍼터링 기술은 최대 $MW/cm^2$의 높은 투입 전력을 이용하지만 타겟 재료의 높은 열전도 요구때문에 실제로 사용할 수 있는 재료가 Cu를 비롯한 몇가지 금속에 제한된다. 수 백 $kW/cm^2$의 중간 전력 밀도를 가질 수 있도록 펄스를 다중 부분 세트로 제어하는 modulated pulse plasma 시스템을 구축하고 전자 온도, 밀도를 고속으로 계측할 수 있는 삼중 프로브와 고증폭 CCD를 이용하여 공정 진단을 한 결과 전자 온도는 최고 15.9 eV, 전자 밀도는 $4.25{\times}10^{12}{\sharp}/cm^3$였으며 weak ionization 조건과 strong ionization 조건에서 Ar I (811.5 nm)의 방출광 세기가 6배 증가하는 것으로 분석되었다.

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The Removal of Flue Gas by Using Bidirectional Pulse Generator (양방향 펄스 전원에 의한 배기가스의 제거)

  • Jeon, Jae-Ryong;Seong, Ki-Bum;Ko, Kwang-Cheol;Kang, Hyung-Boo
    • Proceedings of the KIEE Conference
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    • 1999.07e
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    • pp.2224-2226
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    • 1999
  • Non-thermal plasma techniques is applied in many fields. Recently acid rain, global warming, ozone depletion, and smog are preeminent environmental problems. The cause for this environmental problems is the flue gas. Non-thermal plasma techniques has an attention for the solution of flue gas. Non-thermal plasma is used for the removal of flue gas composed of NOx, etc. This field has grown dramatically. This experiment is performed by using cylinder type reactor under the condition of room temperature and atmosphere pressure. NO gas is used instead of flue gas. Bidirectional pulse generator is used instead of the unidirectional pulse generator to increase the efficiency.

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Development of High Flux Metal Ion Plasma Source for the Ion Implantation and Deposition

  • Kim, Do-Yun;Lee, Eui-Wan
    • Journal of Korean Vacuum Science & Technology
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    • v.7 no.2
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    • pp.45-56
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    • 2003
  • A high flux metal plasma pulse ion source, which can simultaneously perform ion implantation and deposition, was developed and tested to evaluate its performance using the prototype. Flux of ion source was measured to be 5 A and bi-polar pulse power supply with a peak voltage of 250 V, repetition of 20 Hz and width of 100 ${\mu}\textrm{s}$ has an output current of 2 kA and average power of 2 kW. Trigger power supply is a high voltage pulse generator producing a peak voltage of 12 kV, peak current of 50 A and repetition rate of 20 Hz. The acceleration column for providing target energy up to ion implantation is carefully designed and compatible with UHV (ultra high vacuum) application. Prototype systems including various ion sources are fabricated for the performance test in the vacuum and evaluated to be more competitive than the existing equipments through repeated deposition experiments.

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A Study on ther Water Plasma Chemical Process Discharge by Pulse Power Supply (펄스전원을 이용한 수중플라즈마 방전에 관한 연구)

  • Shin, Wan-Ho;Hong, Won-Seok;Yoo, Hyo-Yol;Park, Sun-Soon;Choi, Jae-Ho
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.2179-2181
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    • 2005
  • An experimental study on the water plasma characteristics of removal efficiency for organic contaminants in dye waste water has been investigated. In this study, dielectric barrier discharging electrodes with round shape have disposed cross each other in reactor, and pulse power was supplied to between each electrodes. Its output pulse voltage range is from 0[V] to 30[kV] and output frequency range is from 100[Hz] to 2[kHz]. Using proposed system, High frequency discharge is tested in the mixed Tone(air and water) and the space distribution of streamer corona plasma is observed. In spite of the increasement of voltage and frequency, the proposed system have a stable operation characteristics. It is verified by the experimental results.

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Pulse Plasma Assisted Atomic Layer deposition 장치의 제작과 특성

  • 박지호;김희준;이창우;김용태
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2005.09a
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    • pp.78-82
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    • 2005
  • 펄스 플라즈마 원자층 증착 방법 (PPALD : Pulse Plasma Atomic Layer Deposition)을 이용하여 삼원계 박막인 W-C-N 박막을 ILD layer인 TEOS 위에 제조하였다. 실험은 $WF_6,\;N_2.\;CH_4$ 가스의 순차적 주입과 $N_2$를 이용한 퍼징으로 이루어지며 $N_2$$CH_4$ 가스 주입 시에 pulse plasma가 적용되었다. 일반적인 ALD 증착 기구를 그대로 따르는 PPALD 방법에 의해 제조된 W-C-N 박막은 $H_2/N_2$ 플라즈마 초기 표면 처리에 의해 incubation cycles 없이 초기 cycles부터 0.2 nm/cycle의 일정한 증착율을 가지고 증착되므로 정확한 두께의 control이 가능하며 $300\;{\mu}{\Omega}-cm$의 매우 낮은 비저항 특성을 나타내었다.

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Indium Tin Oxide (ITO) Nano Thin Films Deposited by a Modulated Pulse Sputtering at Room Temperature (모듈레이티드 펄스 스퍼터링으로 상온 증착한 Indium-Tin-Oxide (ITO) 나노 박막)

  • You, Younggoon;Jeong, Jinyong;Joo, Junghoon
    • Journal of the Korean institute of surface engineering
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    • v.47 no.3
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    • pp.109-115
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    • 2014
  • High power impulse magnetron sputtering (HIPIMS), also known as the technology is called peak power density in a short period, you can get high, so high ionization sputtering rate can make. Higher ionization of sputtered species to a variety of coating materials conventional in the field of improving the characteristics and self-assisted ion thin film deposition process, which contributes to a superior being. HIPIMS at the same power, but the deposition speed is slow in comparison with DC disadvantages. Since recently as a replacement for HIPIMS modulated pulse power (MPP) has been developed. This ionization rate of the sputtered species can increase the deposition rate is lowered and at the same time to overcome the problems to be reported. The differences between the MPP and the HIPIMS is a simple single pulse with a HIPIMS whereas, MPP is 3 ms in pulse length is adjustable, with the full set of multi-pulses within the pulse period and the pulse is applied can be micro advantages. In this experiment, $In_2O_3$ : $SnO_2$ composition ratio of 9 : 1 wt% target was used, Ar : $O_2$ flow rate ratio is 4.8 to 13.0% of the rate of deposition was carried out at room temperature. Ar 40 sccm and the flow rate of $O_2$ and then fixed 2 ~ 6 sccm was compared against that. The thickness of the thin film deposition is fixed at 60 nm, when the partial pressure of oxygen at 9.1%, the specific resistance value of $4.565{\times}10^{-4}{\Omega}cm$, transmittance 86.6%, mobility $32.29cm^2/Vs$ to obtain the value.

A study on development of plasma-arc cutting system with computer-numerical control (컴퓨터수치제어(CNC) 플라즈마 아아크 절단장치 개발에 관한 연구)

  • 노태정;나석주;나규환
    • Journal of Welding and Joining
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    • v.8 no.3
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    • pp.60-69
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    • 1990
  • Plasma arc cutting is a fusion cutting process in which a gas-constricted arc is employed to produce a high-temperature, high-velocity plasma jet on the workpiece. This process provides some advantages such as increased cutting velocity, excellent working accuracy and the ability to cut special materials (widely used stainless steels and Al-alloys, for example), when compared with iconventional oxyfuel gas cutting. From the view point of price and reliability of the power source, plasma arc cutting has also some distinct advantages over laser beam cutting. High-speed machines with NC or CNC systems are needed for the plasma arc or laser beam cutting process, while for oxyfuel gas cutting, low-speed machines with copying templates or optical-shape tracking sensors can be applied. The low price and high flexibility of the microprocessor arc contributing more and more the application of CNC system in the plasma arc cutting process, as in other manufacturing fields. From these points of view, a microprocessor-based plasma arc cutting system was developed by using a reference-pulse system, and its performance was tested. The interpolating routines were programmed in the assembly language for saving the memory volume and improving the compouting speed, which has an intimate relationship with the available cutting velocity.

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Simulation of Photon Acceleration with Plasma Wake Fields (플라즈마 항적장을 이용한 광자 가속 시뮬레이션)

  • Lee, Hae-June;Kim, Guang-Hoon;Kim, Changbum;Kim, Jong-Uk;Hyyong Suk
    • Proceedings of the Optical Society of Korea Conference
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    • 2002.07a
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    • pp.242-243
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    • 2002
  • From the dispersion relation of an electromagnetic (EM) wave propagating through plasmas, w$\^$2/ = w$\sub$p/$\^$2/+c$\^$2/k$\^$2/ the phase velocity (w/k) of the wave is large at high density where w$\sub$p/ is large, and small at low density Therefore, when a laser pulse is located on a downward density gradient of a plasma wave, the phase velocity of the back of the pulse becomes faster than that of the front of the pulse and the pulse wavelength decreases. (omitted)

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