• Transactions of the Korean Society of Mechanical Engineers B
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• v.32 no.11
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• pp.832-840
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• 2008

Ablation occurs at irradiance beyond $10^9\;W/cm^2$ with nanosecond and short laser pulses focused onto any materials. Phenomenologically, the surface temperature is instantaneously heated past its vaporization temperature. Before the surface layer is able to vaporize, underlying material will reach its vaporization temperature. Temperature and pressure of the underlying material are raised beyond their critical values, causing the surface to explode. The pressure over the irradiated surface from the recoil of vaporized material can be as high as $10^5\;MPa$. The interaction of high power nanosecond laser with a thin metal in air has been investigated. The nanosecond pulse laser beam in atmosphere generates intensive explosions of the materials. The explosive ejection of materials make the surrounding gas compressed, which form a shock wave that travels at several thousand meters per second. To understand the laser ablation mechanism including the heating and ionization of the metal after lasing, the temporal evolution of shock waves is captured on an ICCD camera through laser flash shadowgraphy. The expansion of shock wave in atmosphere was found to agree with the Sedov's self-similar spherical blast wave solution.

• Laser Solutions
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• v.6 no.2
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• pp.35-41
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• 2003

In this study, manufacturing of polymer master and mold insert for micro injection molding was investigated. Ablation by excimer laser radiation could be used successfully to make 3-D microstructure of PET. The mechanism for ablative decomposition of PET with KrF excimer laser(λ: 248nm, pulse duration: 5ns) was explained by photochemical process. And this process showed PET to be adopted in polymer master for nickel mold insert. Nickel electroforming by using laser ablated PET master was preferable for replication method. Finally, it was shown that excimer laser ablation can substitute for X-ray lithography of LIGA process in microstructuring.

• Laser Solutions
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• v.8 no.2
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• pp.7-12
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• 2005

The material processing of UV nanosecond pulse laser cannot be avoided the material shape change and contamination caused by interaction of base material and laser beam. Nowadays, ultra short pulse laser shorter than nanosecond pulse duration is used to overcome this problem. The advantages of this laser are no heat transfer, no splashing material, no left material to the adjacent material. Because of these characteristics, it is so suitable for micro material processing. The processing of sapphire wafer was done by UV 355nm, green 532nm, IR 1064nm. X-Y motorized stage is installed to investigate the proper laser beam irradiation speed and cycles. Also, laser beam fluence and peak power are calculated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.1
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• pp.33-36
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• 2004

Amorphous GaN film was deposited using a laser ablation of the highly densified GaN target. Through the surface morphological and compositional analysis of films deposited under various laser energies and Ar gas pressures, the film deposited under the pressure of 10 Pa were found to be amorphous GaN with the smooth surface. In particular, the film at 200 mJ/pulse showed the enhanced crystallinity and stoichiometric composition, compared with those of the films at relatively lower laser energy. The strong band-gap emission at 2.8 eV was observed from amorphous GaN film in the room temperature photoluminescence spectra, showing the highest efficiency in the film at 200 mJ/pulse under 10 Pa.

• Journal of the Optical Society of Korea
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• v.12 no.1
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• pp.38-41
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• 2008

Precise micropatterning of polypropylene film, which is highly transparent in the wavelength range over 250 nm has been demonstrated by 355 nm nano/picosecond laser and 785 nm femtosecond laser. Increments of both the pulse energy and the shot number of pulses lead to cooccurrence of photochemical and thermal effects, demonstrated by the spatial expansion of rim on the surface of PP. The shapes of the laser-ablated polypropylene films were imaged by optical microscope and measured by a 3D optical measurement system. And, the ablation depth and width of polypropylene film ablated by femtosecond laser at various pulse energy and pulse number were characterized. Our results demonstrate that a femtosecond pulsed laser is an efficient tool for fabricating micropatterns of polypropylene films, where the micropatterns are specifically tailored in size, location and number easily controlled by laser processing conditions.

• Laser Solutions
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• v.6 no.1
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• pp.33-40
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• 2003

The ablative decomposition mechanism of PMMA(polymethyl methacrylate) and PET(polyethylene terephthalate) with KrF excimer laser(λ : 248nm, pulse duration: 5㎱) is investigated. The UV/Vis spectrometer analysis showed that PMMA is a weak absorber and PET is a strong absorber at the wavelength of 248nm. The results(surface debris, melt, etch depth, etching shape) from drilling and direct writing experiments imply that ablation mechanism of PMMA is dominated by photothermal process, while that of PET is dominated by photochemical process.

• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1039-1042
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• 2013

Polyynes were prepared by liquid laser ablation of a graphite target in deionized water at various physical conditions such as laser power (20 and 40 mJ/pulse) and ablation wavelengths (355, 532, and 1064 nm). The effects of physical parameters on the linear carbon chain length were examined by analyzing the densities of polyynes with different carbon numbers ($C_6H_2$, $C_8H_2$, and $C_{10}H_2$) as well as their branching ratios. We concluded the photophysical processes turned out to play a more significant role than thermal ones in the formation of polyynes.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.217-221
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• 2004

[ $CO_2$ ]laser ablation rates for bulk 4H-SiC substrates and GaN/AIN/SiC templates in the range 229-870 ${\mu}m.min^{-1}$ were obtained for pulse energies of 7.5-30 mJ over diameters of 50·500 ${\mu}m$ with a Q-switched pulse width of ${\sim}30$ nsec and a pulse frequency of 8 Hz. The laser drilling produces much higher etch rates than conventional dry plasma etching (0.2 - 1.3 ${\mu}m/min$) making this an attractive maskless option for creating through-wafer via holes in SiC or GaN/AlN/SiC templates for power metal-semiconductor field effect transistor applications. The via entry can be tapered to facilitate subsequent metallization by control of the laser power and the total residual surface contamination can be minimized in a similar fashion and with a high gas throughput to avoid redeposition. The sidewall roughness is also comparable or better than conventional via holes created by plasma etching.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.3
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• pp.25-31
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• 2009

Femto-second laser ablation with the various feed velocities of the Invar alloy and the micro surface milling for the processing condition were studied. We used a regenerative amplified Ti:sapphire laser with a 1kHz repetition rate, 184fs pulse duration time and 785nm wavelength. Femto-second laser pulse was irradiated on the Invar alloy with the air blowing at the condition of various laser peak powers and feed velocities. An ablation characteristic according to feed velocity of the Invar alloy was appeared as the non-linear type at different zone of energy fluence. The micro surface milling of the Invar alloy using a mapping method was investigated. The optimal condition of micro surface milling was laser peak power of 22.8mW, feed velocity of 1 mm/s, beam gap of $1{\mu}m$. With the optimal processing condition, the fine rectangular shape without burr and thermal damage was achieved. Using the femto-second laser system, it demonstrates excellent tool for micro surface milling of the Invar alloy without heat effects and poor edge.

• Bulletin of the Korean Chemical Society
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• v.23 no.2
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• pp.309-314
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• 2002

The ablation dynamics and cluster formation of $C_n^+$ ions ejected from 355 nm laser ablation of a graphite target in vacuum are investigated using a reflectron time-of-flight (RTOF) mass spectrometer. At low laser fluence, odd-numbered cluster ions with $3{\leq}n{\leq}15$ are predominantly produced. Increasing the laser fluence shifts the maximum size distribution towards small cluster ions, implying the fragmentation of larger clusters within the hot plume. The temporal evolution of $C_n^+$ ions was measured by varying the delay time of the ion extraction pulse with respect to the laser irradiation, providing significant information on the characteristics of the ablated plume. Above a laser fluence of $0.2J/cm^2$ , large cluster ions ($n{\geq}30$) are produced at relatively long delay times, indicating that atoms or small carbon clusters aggregate during plume propagation. The dependence of the intensity of ablated $C_n^+$ ions on delay time after laser irradiation shows that the most probable velocity of each cluster ion decreases with cluster size.