• 분석과학
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• 제9권3호
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• pp.221-234
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• 1996

흔적량 금속이온인 Ag(I), Pd(II), Au(III) 및 Pt(IV)의 dibenzylammonium dibenzyldithiocarbamate(DBADBDC) 착물을 용매추출하기 위한 기초적인 연구를 수행하였다. 클로로포름으로 리간드 및 금속착물을 추출하기 위한 pH의 영향을 조사한 결과, DBADBDC는 pH 2~9에서 일정하게 추출되었으며 금속착물의 경우 Ag(I)는 산성용액에서, Pd(II) 는 pH 4 이상에서, Au(III)는 모든 pH 영역에서, Pt(IV)는 pH 3 이상에서 일정하게 추출되었다. 금속-DBDC 착물의 수용액과 용매간 분배 및 추출평형에서 분포비와 추출률은 Ag(I)의 경우 pH 0에서 log D=4.226 : E(%)=99.9%, Pd(II)는 pH 4~7에서 log D=1.804 ; E(%)=98.5%, Au(III)는 pH 2~10에서 log D=3.755: E(%)=99.9%, Pt(IV)는 pH 8에서 log D=0.165 : E(%)=57.2%의 최대값을 나타내었다. 몰비법으로 금속이온과 리간드가 착물을 형성할 때의 결합비를 조사해 보았다. Ag(I)는 1 : 1, Pd(II), Au(III) 및 Pt(IV)는 1 : 2의 착물을 형성하였으며, Au(III) 와 Pt(IV)는 착물내에 염화이온이 포함되어 있었다. 수용액에 염화이온이 존재할 때의 금속-클로로 착물의 추출반응을 규명할 수 있었으며, 각 금속이온을 착화제인 DBADBDC로보 추출할 때 각각의 추출반응과 상수식을 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.110-110
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• 1999

Polyvinylidenefluoride (PVDF) is most used in piezoelectric polymer industry. Electrode effect on the electrical properties of PVDF has been investigated. al has been used due to fair adhesion for PVDF. Work function of metal plays an important role on the electrical properties of ferroelectrics for top and /or bottom electrode. However, Al has much lower work function than Pt or Au and so leakage current of Al/PVDF/Al may be large. Pt or Au has not been used for electrode of PVDF system due to poor adhesion. PVDF irradiated by Ar+ ion beam with O2 environment takes good adhesion to inert metal. Contact angle of PVDF to triple distilled water was reduced from 75$^{\circ}$ to 31$^{\circ}$ at 1$\times$1015 Ar+/cm2. Working pressure was 2.3$\times$10-4 Torr and base pressure was 5$\times$10-6 Torr. Pt was deposited by ion beam sputtering and thickness of pt film was about 1000$\AA$. in previous study, enhancing adhesion of Pt on PVDF was shown. in this study, effect of electrode on PVDF will be represented.

• 전기화학회지
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• 제7권1호
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• pp.16-20
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• 2004

플러렌 이온$(full^-)$으로 수식된 피를 고분자 피막을 전기화학법으로 중합하기 위하여 사용된 전지는 Au/5mM pyrrole, 1mM fullerene, 0.1M $TBABF_4,\; CH_2C1_2/Pt$이었으며 이 전지로 $electrode/ppy(full^-)ppy(full^-){\ldots}$와 같은 웨이퍼형의 전극을 제작하였다. 이 전극을 사용한 Au(quartz crystal analyzer; QCA)/ppy$(full^-)$, 0.01M metal ion(aq.)/Pt형의 전지로 알카리 금속이온을 포집하였다. $Li^+,\;Na^+,\;K^+,\;Rb^+$ 및 $Cs^+$이온의 포집에 대한 속도상수는 일차반응 속도식으로 계산한 결과 그 값이 각각 $1.60\times10^{-8},\;3.13\times10^{-11},\;1.38\times10^{-9},\;2.71\times10^{-11}$ 및 $2.98\times10^{-12}mo1.s^{-1}$이였다. 이 전극을 수정판 미량저울(QCM)을 적용하여 결정한 각 이온의 화학양론은 $Li_7C_{60},\;Na_4C_{60},\;K_3C_{60},\;Rb_1C_{60}$ 및 $Cs_1C_{60}$이었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.41-41
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• 1998

Rare earth metal films have been used as a buffer layer for growing ferroelectric t thin film or a seed layer for magnetic multilayer. But when it was deposited on s semiconductor substrates for the application of magneto-optic (MO) storage media, it i is difficult to exactly measure magnetic cons떠nts due to shunting current, and so it n needs to grow metal films on insulator substrate to reduce such effect. Recently, it w was reported that ultra-thin Pt layer were epitaxially grown on A12O:J by ion beam s sputtering in 비떠 high vacuum and it can be used as a seed layer for the growth of C Co-contained magnetic multilayer. In this stu$\phi$, Pt thin film were epi떠xially grown on AI2D3 ($\alpha$)OJ) by RF magnetron s sputtering. The crystalline structure was analyzed by transmission electron microscope ( (TEM) and Rutherford Back Scattering (RBS)/Ion Channeling. In TEM study, Pt was b believed to be twinned on AI잉3($\alpha$)01) su$\pi$ace about Pt(ll1) plane.Moreover, RBS c channeling spectra showed that minimum scattering yield of Pt(111)/AI2O:J(1$\alpha$)OJ) was 4 4% and Pt(11J)/AI2D3($\alpha$)OJ) had 3-fold symmetry.

• Journal of Oral Medicine and Pain
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• 제43권4호
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• pp.131-135
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• 2018

Purpose: To investigate the correlation between the amount of salivary metal ions released from fixed prostheses and the period of restoration insertion, and to evaluate the correlation between the type and amount of metal ions in saliva and oral lesions (OL). Methods: Based on the oldest prosthesis, we divided patients into two groups: more than 5 years (n=19) and less than 5 years (n=10). Patients were also divided into two groups by another criteria: the one with the presence (n=15), and the one with absence (n=14) of OL, and the amounts of metal ions were examined. Metal ions-gold (Au), copper, cobalt (Co), chromium (Cr), nickel, zinc, aluminum, palladium (Pd), tin, and platinum (Pt)-were measured using laser ablation microprobe inductively coupled plasma mass spectrometry. Results: Significantly higher quantities of Co, Pt, and Pd ions were released in patients with fixed prosthesis of more than 5 years (p<0.05). Measurement of the average amount of salivary metal ions was performed on patients with and without OL - Significantly higher amounts of Cr, Pd and Au ions were released in patients with OL (p<0.05). Conclusions: Old prostheses (${\geq}5years$) released metal ions, and among them were Co, Pt and Pd ions more than others. Patients with OL showed significantly higher levels of ion release, especially Cr, Pd and Au. There was a positive correlation between the amount of a certain kind of released metal ions, especially Pd, and the development of OL. Salivary Pd ion released from old prostheses could affect the pathogenesis of OL; therefore, long-term follow-up is important.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.408-408
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• 2012

It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of $O_2$ gas on the etching characteristics of FePt thin films were investigated. FePt thin films were etched using ICPRIE in $CH_4/O_2/Ar$ gas mix. The etch rate and the etch selectivity were investigated in various $O_2$ concentrations. The etch profiles were studied in varying etch parameters such as coil rf power, dc-bias voltage, and gas pressure. TiN was employed as a hard mask. For observation etch profiles, field emission scanning electron microscopy (FESEM) was used.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.167-167
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• 2011

Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

• Macromolecular Research
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• 제16권3호
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• pp.204-211
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• 2008

A platinum-catalyzed polyelectrolyte porous membrane was prepared by solid-state compression of electrospun polystyrene (PS) fibers and in-situ metallization of counter-balanced ionic metal sources on the polymer surface. Using this ion-exchange metal-polymer composite system, fiber entangled pores were formed in the interstitial space of the fibers, which were surrounded by sulfonic acid sites ($SO_3^-$) to give a cation-selective polyelectrolyte porous bed with an ion exchange capacity ($I_{EC}$) of 3.0 meq/g and an ionic conductivity of 0.09 S/cm. The Pt loading was estimated to be 16.32 wt% from the $SO_3^-$ ions on the surface of the sulfonated PS fibers, which interact with the cationic platinum complex, $Pt(NH_3)_4^{2+}$, at a ratio of 3:1 based on steric hindrance and the arrangement of interacting ions. This is in good agreement with the Pt loading of 15.82 wt% measured by inductively coupled plasma-optical emission spectroscopy (ICP-OES). The Pt-loaded sulfonated PS media showed an ionic conductivity of 0.32 S/cm. The in-situ metallized platinum provided a nano-sized and strongly-bound catalyst in robust porous media, which highlights its potential use in various electrochemical and catalytic systems.

• 세라미스트
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• 제21권4호
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• pp.388-405
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• 2018

In this paper, we review about current development of electrode materials for Li-ion batteries and catalysts for fuel cells. We scrutinized various electrode materials for cathode and anode in Li-ion batteries, which include the materials currently being used in the industry and candidates with high energy density. While layered, spinel, olivine, and rock-salt type inorganic electrode materials were introduced as the cathode materials, the Li metal, graphite, Li-alloying metal, and oxide compound have been discussed for the application to the anode materials. In the development of fuel cell catalysts, the catalyst structures classified according to the catalyst composition and surface structure, such as Pt-based metal nanoparticles, non-Pt catalysts, and carbon-based materials, were discussed in detail. Moreover, various support materials used to maximize the active surface area of fuel cell catalysts were explained. New electrode materials and catalysts with both high electrochemical performance and stability can be developed based on the thorough understanding of earlier studied electrode materials and catalysts.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1532-1534
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• 2003

We attempted to fabricate a dendrimer Langmuir-Blodgett(LB) films containing 48 pyridinepropanol functional end group. As the pyridinepropanol functional group could form a complex structure with metal ions. In this study the samples for electrical measurement were fabricated to two types metal complexes with $Pt^{4+}$ ions by LB method. And we have investigated the surface activity at the air-water interface as well as the electrical properties for the monolayers of G4-48PyP dendrimer complex with metal ions($Pt^{4+}$ ions) by different method. In the surface pressure-area(${\pi}$-A) isotherms of the dendrimers, the stable condensed films formed at the air-water interface and the different method of metal complex showed the difference on molecular behavior. We have studied the electrical properties of the ultra thin dendrimer LB films investigated by the current-voltage (I-V) characteristics of metal/dendrimer LB films/metal(MIM) structure. In conclusion, it is demonstrated that the metal ion around G4-48PyP dendrimer can contribute to make formation of network structure among dendrimers and it result from the change of electrical properties.