• KIEAE Journal
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• v.16 no.6
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• pp.109-114
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• 2016

Purpose: The underground air is the warm air discharged from the porous volcano bedrock 30-50m underground in Jeju, including excessive humidity. The temperature of the underground air is $15-20^{\circ}C$ throughout the year. In Jeju, the underground air was used for heating greenhouses by supplying into greenhouses directly. This heating method by supplying the underground air into greenhouses directly had several problems. The study was conducted to develop the heat pump system using underground air as heat source for resolving excessive humidity problem of the underground air, adopting the underground air as a farm supporting project by Ministry of Agriculture, Food and Rural Affairs(MAFRA) and saving heating cost for agricultural facilities. Method: 35kW scale(10 RT) heat pump system using underground air installed in a greenhouse of area $330m^2$ in Jeju-Special Self-Governing Province Agricultural Research & Extension Services, Seogwipo-si, Jeju. The inlet and outlet water temperature of the condenser, the evaporator and the thermal storage tank and the underground air temperature and the air temperature in the greenhouse were measured by T type thermocouples. The data were collected and saved in a data logger(MV200, Yokogawa, Japan). Flow rates of water flowing in the condenser, the evaporator and the thermal storage tank were measured by an ultrasonic flow meter(PT868, Panametrics, Norway). The total electric power that consumed by the system was measured by a wattmeter(CW240, Yokogawa, Japan). Heating COP, rejection heat of condenser, extraction heat of evaporator and heating cost were analyzed. Result: The underground air in Jeju was adopted as a farm supporting project by Ministry of Agriculture, Food and Rural Affairs(MAFRA) in 2010. From 2011, the heat pump systems using underground air as a heat source were installed in 12 farms(16.3ha) in Jeju.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.93-98
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• 2001

YMnO$_3$ films are excellent gate dielectric materials of ferroelectric random access memories (FRAMs) with MFSFET (metal -ferroelectric-semiconductor field effect transistor) structure because YMnO$_3$ films can be deposited directly on Si substrate and have a relatively low permittivity. Although the patterning of YMnO$_3$ thin films is the requisite for the fabrication of FRAMs, the etch mechanism of YMnO$_3$ thin films has not been reported. In this study, YMnO$_3$thin films were etched with Cl$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ film is 285$\AA$/min under Cl$_2$/(Cl$_2$+Ar) of 1.0, RF power of 600 W, dc-bias voltage of -200V, chamber pressure of 15 mTorr and substrate temperature of $25^{\circ}C$. The selectivities of YMnO$_3$ over CeO$_2$ and $Y_2$O$_3$ are 2.85, 1.72, respectively. The selectivities of YMnO$_3$ over PR and Pt are quite low. Chemical reaction in surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) surface of the selected YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scaning electron microscopy(SEM)

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.875-881
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• 2004

Fundamental results obtained from an atomic force microscope (AFM) chemically-induced direct nano-lithography process are presented, which is regarded as a simple method for fabrication nm-scale devices such as superconducting flux flow transistors (SFFTs) and single electron tunneling transistors (SETs). Si cantilevers with Pt coating and with 30 nm thick TiO coating were used as conducting AFM tips in this study. We observed the surfaces of superconducting strip lines modified by AFM anodization' process. First, superconducting strip lines with scan size 2 ${\mu}{\textrm}{m}$${\times}$2 ${\mu}{\textrm}{m}$ have been anodized by AFM technology. The surface roughness was increased with the number of AFM scanning, The roughness variation was higher in case of the AFM tip with a positive voltage than with a negative voltage in respect of the strip surface. Second, we have patterned nm-scale oxide lines on ${YBa}-2{Cu}_3{O}_{7-x}$ superconducting microstrip surfaces by AFM conductive cantilever with a negative bias voltage. The ${YBa}-2{Cu}_3{O}_{7-x}$ oxide lines could be patterned by anodization technique. This research showed that the critical characteristics of superconducting thin films were be controlled by AFM anodization process technique. The AFM technique was expected to be used as a promising anodization technique for fabrication of an SFFT with nano-channel.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.960-964
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• 2004

[ $Ba_2NaNb_5O_{15}$ ](BNN) thin films have been prepared by the ion beam sputter deposition (IBSD) method on Pt coated Si substrate at temperature as low as $600^{\circ}C$ XRD, SEM were used to investigate the crystallization and microstructure of the films. It was found that the films were crack-free and uniform in microstructure. The electric properties of thin films were carried out by observation of D-E hysteresis loop, dielectric constant and leakage current. It was found the deposition rate strongly influenced the phase formation of the films, where the phase of $BaNb_2O_6$ was always formed when the deposition rate was high. However, the single phase (tungsten bronze structure ) BNN thin film was obtained with the deposition rate as low as $22{\AA}/min$. The remanent polarization Pr and dielectric constant are about 1-2 ${\mu}C/cm^2$ and $100\sim200$, respectively. It was also founded the electric properties of thin films were influenced by the deposition rate. The Pr and dielectric constant of films increased with the decrease of deposition rate. The effects of annealing temperature and annealing time to the crystallization behavior of films were studied. The crystallization of thin film started at about $600^{\circ}C$. The adequate crystallization was gotten at the temperature of $650^{\circ}C$ when the annealing time is 0.5 hour or at the temperature of $600^{\circ}C$ when the annealing time is long as 6 hours.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• Journal of Oriental Neuropsychiatry
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• v.23 no.1
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• pp.83-92
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• 2012

Objectives: The purpose of this study was to examine the psychological factors of Sasang constitutions which are classified by QSCC II(Questionnaire for Sasang Constitution Classification II) using major personality tests which are based on western psychological theory. Methods: 151 college students completed the MMPI-2, MBTI, NEO-PI-R, TCI-RS, and QSCC II. The data were analyzed by ANOVA and post hoc testing to find which personality scale significantly differentiated each Sasang constitution style. Results: MMPI-2, scale 2(D), 5(Mf), 7(Pt), 0(Si) and introversion scale(INTR) showed significant differences between Soeumin and Soyangin. Also, on the dimension of introversion-extraversion in MBTI, and neuroticism(N) and extraversion(E) in NEO-PI-R, there were differences between Soeumin and the other two constitutions(Soyangin and Taeeumin). Finally, in TCI-RS, there were differences between Soeumin and Soyangin on the scale of novelty seeking(NS) and reward dependence(RD), and with regards to the harm avoidance scale(HA), Soeumin received a higher score than any other constitutions. Conclusions: The analysis demonstrates that the classification of QSCC II is most consistent between Soeumin and Soyangin across 4 major personality tests.

• Korean Journal of Materials Research
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• v.17 no.11
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• pp.574-579
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• 2007

Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.133-133
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• 1998

In the thin film alloy formation of the transition metals ion-beam-mixing technique forms a metastable structure which cannot be found in the arc-melted metal alloys. Sppecifically it is well known that the studies about the electronic structure of ion-beam-mixed alloys pprovide the useful information in understanding the metastable structures in the metal alloy. We studied the electronic change in the ion-beam-mixed ppt-Ct alloys by XppS and XANES. These analysis tools pprovide us information about the charge transfer in the valence band of intermetallic bonding. The multi-layered films were depposited on the SiO2 substrate by the sequential electron beam evapporation at a ppressure of less than 5$\times$10-7 Torr. These compprise of 4 ppairs of ppt and Cu layers where thicknesses of each layer were varied in order to change the alloy compposition. Ion-beam-mixing pprocess was carried out with 80 keV Ae+ ions with a dose of $1.5\times$ 1016 Ar+/cm2 at room tempperature. The core and valence level energy shift in these system were investigated by x-ray pphotoelectron sppectroscoppy(XppS) pphotoelectrons were excited by monochromatized Al K ａ(1486.6 eV) The ppass energy of the hemisppherical analyzer was 23.5 eV. Core-level binding energies were calibrated with the Fermi level edge. ppt L3-edge and Cu K-edge XANES sppectra were measured with the flourescence mode detector at the 3C1 beam line of the ppLS (ppohang light source). By using the change of White line(WL) area of the each metal sites and the core level shift we can obtain the information about the electrons pparticippating in the intermetallic bonding of the ion-beam-mixed alloys.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.135-136
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• 1998

By the ion bombardment the original discrete layered structure is damaged and a uniformly mixed layer is formed by the intermixing of the films. Immediately after this dynamic cascade mixing a structure of this mixed layer is likely to be a mixture of randomly distributed atoms. Subsequently the mixed layered structure becomes a non-equilibrium structure such as the metastable pphase because the kinetic energies of the incident ions rappidly dissippate and host atoms within the collision cascade region are quenched from a highly energetic state. The formation of the metastable transition metal alloys using ion-beam-mixing has been extensively studied for many years because of their sppecific ppropperties that differ from those of bulk materials. in ion-beam-mixing the alloy or comppound is formed due to the atomic interaction between different sppecies during ion bombardment. in this study the metastable pphase formed by ion-beam-mixing pprocess is comppared with equilibrium one by arc-melting method by GXRD and XAS. Therfore we studied the fundamental characteristics of charge redistribution uppon alloying and formation of intermetallic comppounds. The multi-layer films were depposited on a wet-oxidized Si(100) substrate by sequential electron beam evapporation at a ppressure of less than 5$\times$10-7 Torr during depposition. These compprise 4 ppairs of Co and ppt layers where thicknesses of each layer were varied in order to change the alloy compposition.

• Korean Journal of Head & Neck Oncology
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• v.27 no.1
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• pp.3-11
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• 2011

Hepatocyte growth factor(HGF) and c-Met play an important role in the control of tumor growth and invasion, and they are known to be good prognostic indicators of patient outcome. Epigallocatechin-3-gallate (EGCG) has been shown to have chemopreventive and therapeutic properties by modulating multiple signal pathways regarding the control of proliferation and invasion of cells. In this study, we evaluated the role of c-Met in EGCG-induced inhibition of invasion and apoptosis in an oral cancer cell line. In KB cells where c-Met was knocked down with siRNA, we performed invasion assay and FACS with Annexin V-FITC/PT staining. In addition, we checked the change of mitochondrial membrane potential(MMP) and the generation of reactive oxygen species(ROS). EGCG-induced inhibition of invasiveness was significantly decreased after the knock-down of c-Met. EGCG-induced apoptosis, MMP change and ROS generation was also reduced in c-Met knock-ed-down KB cells. These results suggest that c-Met is involved in EGCG-induced apoptosis and inhibition of invasiveness of oral cancer cell line.