• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.221-225
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• 2003

The MFIS-FET(Field Effect Transistor) devices using $BLT/Y_2O_3$ buffer layer on p-Si(100) substrates were fabricated by the Sol-Gel method and conventional memory processes. The crystal structure, morphologies and electrical properties of prepared devices were investigated by using various measuring techniques. From the C-V(capacitance-voltage) data at 5V, the memory window voltage of the $Pt/BLT/Y_2O_3/si$ structure decreased from 1.4V to 0.6V with increasing the annealing temperature from $700^{\circ}C\;to\;750^{\circ}C$. The drain current (Ic) as a function of gate voltages $(V_G)$ for the $MFIS(Pt/BLT/Y_2O_3/Si(100))-FET$ devices at gate voltages $(V_G)$ of 3V, 4V and 5V, the memory window voltages increased from 0.3V to 0.8V as $V_G$ increased from 3V to 5V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.157-159
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• 2000

Vanadate glass in the $Li_2O-P_2O_5-V_2O_5$ system with 60mol% $V_2O_5$ was prepared by melting the bath in pt. crucible followed by quenching on the copper plate. We found that $Li_2O-P_2O_5-V_2O_5$ glass ceramics obtained from nucleation of $Li_2O-P_2O_5-V_2O_5$ glass showed significantly higher capacity and longer cycle life than conventionally made crystalline $LiV_3O_8$. In the present paper, We describe the charge/discharge properties during crystallization process and find the best crystallization condition of $Li_2O-P_2O_5-V_2O_5$ glass as cathode material. The Charge and discharge capacity of $Li_2O-P_2O_5-V_2O_5$ glass was about 220mAh/g for the cell heat-treated at $250^{\circ}C$ for 2.5hr.

• Journal of Mechanical Science and Technology
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• v.20 no.1
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• pp.1-12
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• 2006

This work reviews the effects of catalyst formulation and exhaust gas composition on soot oxidation in CDPF (Catalytic Diesel Particulate Filter). DOC's (Diesel Oxidation Catalysts) have been loaded with Pt catalyst (Pt/$Al_{2}O_3$) for reduction of HC and CO. Recent CDPF's are coated with the Pt catalyst as well as additives like Mo, V, Ce, Co, Fe, La, Au, or Zr for the promotion of soot oxidation. Alkali (K, Na, Cs, Li) doping of metal catalyst tends to increase the activity of the catalysts in soot combustion. Effects of coexistence components are very important in the catalytic reaction of the soot. The soot oxidation rate of a few catalysts are improved by water vapor and NOx in the ambient. There are only a few reports available on the mechanism of the PM (particulate matter) oxidation on the catalysts. The mechanism of PM oxidation in the catalytic systems that meet new emission regulations of diesel engines has yet to be investigated. Future research will focus on catalysts that can not only oxidize PM at low temperature, but also reduce NOx, continuously self-cleaning diesel particulate filters, and selective catalysts for NOx reduction.

• Journal of the Korean Chemical Society
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• v.38 no.9
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• pp.695-700
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• 1994

Hydrogenolysis reactions of CFC-113a catalyzed by various heterogeneous catalysts $(Rh/Al_2O_3,\;Pd/C,\;Ni,\;Al_2O_3,\;Active\;carbon)$ were investigated in the liquid and gas phases. In the liquid phase reaction, different catalysts showed different activities, but all catalysts used gave high selectivities toward HCFC-123 over 95%. It was noticeable that the neutral $Al_2O_3$ showed both a high activity and a selectivity in the liquid phase reaction. In the gas phase reaction, transition metals on carbon(Pd/C, Pt/C) were so active for hydrogenolysis of CFC-113a that they even catalyzed the production reaction of overhydrogenated compounds such as $HCFC-133a(CF_3CH_2Cl)\;and\;HFC-143a(CF_3CH_3)$. $Al_2O_3$, which showed the high activity in the liquid phase reaction, did not show a remarkable activity. When $Al_2O_3$ was used in the liquid phase reaction, the hydrogenolysis of CFC-113a proceeded without any side products in THF. However, the same reaction in MeOH produced side products, such as $CH_3OCH_3\;and\;CH_3CH_2OCH_3$ from solvent. Based on this result, including heterogeneous catalysts, it was concluded that the solvent played an important role in the liquid phase reaction.

• Polymer(Korea)
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• v.28 no.2
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• pp.143-148
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• 2004

${\alpha}$,$\omega$-Hydrogen polyorganosiloxane(HPMDMS) prepolymer was prepared from equilibrium polymerization ofoctamethylcyclotetrasiloxane, 1,3,5-trimethylcyclotrisiloxane, 1,3,5,7-tetravinyl-1,3,5,7-tetramethyl-cyclotetrasiloxane, and 1,1,3,3-tetramethyl disiloxane as an end-blocker in the presence of tetramethylammonium siloxanolate as a catalyst. Polyorganosiloxane modified with dimethylacrylamide(APMDMS) was prepared by hydrosilylation of HPMDMS with dimethylacrylamide in the presence of Pt catalyst, and followed by coordination of metal oxide (APMDMS-MO), such as NiO and FeO, to the amide moieties of the resulting polymer. The chemical structures of HPMDMS and APMDMS were confirmed by FT-IR and $^1$H-NMR analysis. Liquid silicone rubber containing metal oxide composite (LSRMO) was prepared by compounding APMDMS-MO, ${\alpha}$,$\omega$-vinylpolydimethylsiloxane, and a catalyst in a high speed dissolver. The thermal conductivity of LSRMO composite was determined to be 0.29 W/mK, and the volume resistivity exhibited a lower value than that of LSR composite. The mechanical and thermal properties of LSRMO and LSR composite were measured by UTM and TGA.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.145-150
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• 1995

PZT thin films were fabricated on Pt/Ti/SiO2/Si substrates at $500^{\circ}C$ by ECR-PECVD for the application to the charge storage capacitor of ULSI DRAMs. Perovskite single phase PZT films were obtained by controling the film compositional ratio Pb/(Zr+Ti) close to 1. The anion concentrations in the PZT films were successfully controlled by adjusting the flow rates of each MO sources. Capacitance of a typical 94 nm thick PZT film prepared at $500^{\circ}C$ in this work was about 5.3 uF/$\textrm{cm}^2$, which corresponds to the equivalent SiO2 thickness of 0.65nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.295-298
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• 2000

Vanadate glasses in the Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$ system containing 10~20mo1% glass former, P$_2$O$_{5}$ were prepared by melting the batch in pt. crucible followed by quenching on the copper plate. We found that Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$ g1ass-ceramics obtained from crystallization of glass showed significantly higher capacity and longer cycle life than Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$ g1ass. In the present paper, we describe electro-chemical properties during crystallization process and find the best crystallization condition of Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$ g1ass as cathod material. Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$ glass-ceramics shows superior rechargeable capacity of 220 mAh/g in the cycling between 2.0 and 3.9V. between 2.0 and 3.9V.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.150-150
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• 2012

본 연구는 1차원 나노 구조의 합성과 기초적 분석에 관한 연구로써 특히 무기 산화물 나노재료를 그 대상으로 하였다. 내용으로는 첫째, 1차원 코어 나노와이어의 합성을 하였고 Thermal evaporation, substrate의 가열, 그리고 MOCVD 를 사용한 결과들을 나열한다. 둘째, 코어-쉘 나노와이어를 제작하기 위하여 특히 쉘층의 제작방법을 연구하였는데 PECVD, ALD, 그리고 sputtering에 의한 결과들을 나열하고 간단히 설명한다. Thermal evaporation에 의한 1차원 나노와이어 합성의 경우는 MgO의 예를 들었는데 MgO 나노와이어는 Au가 증착된 기판을 열처리하여 Au dot를 형성하고 이의 morphology를 조절하여 최적의 나노와이어 합성조건을 선정하였다. 이로써 기판 morphology가 나노선의 성장및 형상에 영향을 준다는 사실을 알게 되었다. 이 사실은 In2O3기판을 사용하고 이의 표면거칠기를 열처리로 조절하므로써 역시 나노와이어의 성장을 촉진하는 방법을 찾아내었다. 또한 thermal evaporation공법은 source분말의 선택에 따라 다양한 소재를 제작가능하다는 결과를 제시하였다. 예를 들면 SiOx 층이 precoating된 chamber내에서 MgO 나노선을 합성하는 것과 동일한 조건으로 실험을 진행하면 Mg2SiO4 나노와이어가 형성된 것을 확인하였다. 또한 Sn과 MgB2 분말을 함께 적용할 경우 Sn tip을 가진 MgO 나노와이어를 얻을 수 있었다. 이는 Sn이 동시에 촉매의 역할을 하였기 때문일 것으로 추정된다. 한편 Sn과 Bi 혼합분말을 적용한 경우 Bi2Sn2O7 신소재 tip을 포함한 SnO2 나노와이어를 얻을 수 있었다. 이 경우 Bi원자가 적절한 촉매의 역할을 수행한 것으로 사료된다. Substrate의 가열공법에서는 Si wafer상에 각종 금속 즉 Au, Ag, Cu, Co, Mo, W, Pt, Pd등 초박막을 DC sputter 로 형성한후 annealing하는 기술을 사용하였다. 특기할 만한 것은 Co를 사용한 경우 나노와이어의 spring구조를 얻을 수 있었다는 점이다. MOCVD에 의하여는 Ga2O3및 Bi2O3 나노와이어를 비교적 저온에서 합성하였고 In2O3의 경우는 독특한 나노구조를 형성하였고 이의 결정학적 특성에 대하여 조사하였다.

• Korean Journal of Organic Agriculture
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• v.23 no.3
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• pp.509-522
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• 2015

Organic ginseng farming has rapidly increased in response to consumer demand for a safe product which improves health. Differences in soil nutrient concentration and ginsenoside content between organic and conventional ginseng farming have, however, not yet been properly studied. Therefore the aim of the present study was to compare soil nutrient concentration and ginsenoside content between these two farming systems. $NO_3-N$, $P_2O_5$, and K were significantly different between organic and conventional ginseng farming. The total content of ginsenoside and individual ginsenoside components were higher in organically grown ginseng than in ginseng from conventional farming, although there is no significant difference. Particularly, protopanaxadiol saponins were higher than protopanaxatriol saponins in ginseng from organic farming compared to ginseng produced by conventional farming. $NO_3-N$ content in soils showed a negative correlation with the content of ginsenosides $Rb_2$ and Rd. In addition, $P_2O_5$ showed a negative correlation with ginsenosides $Rb_1$, Rc, and PD/PT ratio. Organic matter showed a positive crrelation with ginsenosides Re. To increase the ginsenoside content of ginseng, we recommend increasing organic matter and decreasing $NO_3-N$ and $P_2O_5$ contents in the soil.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.12
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• pp.1008-1015
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• 2002

The fabricated La-modified lead titanate (PLT) thin film without poling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{l-x}La_{x}Ti_{l-x/4}O_3$(x=0.1) (PLT(10)) thin film haying 10 mol% La content was deposited on a Pt/$TiO_{x}$/$SiO_2$/Si substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is 6.6 x $10^{-9}C$$textrm{cm}^2$$.$K without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03 x $10^{-11}C$.cm/J and 1.46 x $10^{-10}C$.cm/J, respectively The PLT(10) thin film has voltage responsivity (RV) of 5.IS V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity ($D^{*}$) of the PLT(10) thin film are 9.93 x $10^{-8}$W/$Hz^{1/2}$ and 1.81 x $10^{6}$cm.$Hz^{1/2}$/W at the same frequency of 100 Hz,, respectively The results means that PLT thin film having 10 mol% La content is suitable for the sensing materials of pyroelectric IR sensors.