• Journal of the Korean Chemical Society
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• v.40 no.4
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• pp.264-272
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• 1996

Cluster models of the Υ-Al2O3(111) and the Pt(111) surfaces have been used in an atom superposition and electron delocalization molecular orbital study of interfacial bond strengths between them. The reduced extents for Al3+ are due to the ratio of oxygen to aluminum atoms. The greater the reduced extent for Al3+ is, the stronger the binding energy is to Pt atoms in a cluster. The oxygen-covered surfaces of Υ-Al2O3(111) are shown to bind more weakly to Pt atoms, while the binding to the oxygen-covered surface formed under oxidizing conditions of Pt atoms is strong. The interfacial bond of platinum-alumina may be possible by a charge-transfer mechanism from the platinum surface to the partially empty O-2p band and Al3+ dangling surface orbital.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.460-463
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• 2002

$MoO_3$ thin films were deposited on electrode and heater screen-printed alumina substrates in $O_2$ atmosphere by RF reactive sputtering using Molybdenum metal target. The deposition was performed at $300^{\circ}C$ with 350W of a forward power in an $Ar-O_2$ atmosphere. The working pressure was maintained at $3{\times}10^{-2}mtorr$ and all deposited films were annealed at $500^{\circ}C$ for 5hours. To investigate gas sensing characteristics of the addition doped $MoO_3$ thin film, Co, Ni and Pt were used as adding dopants. The sensing properties were investigated in tenn of gas concentration under exposure of reducing gases such as $H_2$, $NH_3$ and CO at optimum working temperature. Co-doped $MoO_3$ thin film shows the maximum 46.8% of sensitivity in $NH_3$ and Ni-doped $MoO_3$ thin film exhibits 49.7% of sensitivity in $H_2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.705-710
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• 2003

MoO$_3$thin films were deposited on electrode of alumina substrates in $O_2$atmosphere by RF reactive sputtering using molybdenum metal target. The deposition was performed at 30$0^{\circ}C$ with 350 W of a forward power in an Ar-O$_2$atmosphere. The working pressure was maintained at 3$\times$10$^{-2}$ torr and all deposited films were annealed at 50$0^{\circ}C$ for 5 hours. The surface morphology of films was observed by using a SEM and crystalline phases were analyzed by using a XRD. To investigate gas sensing characteristics of the doped MoO$_3$thin film, Co, Ni and Pt were used as dopants. The sensing properties were investigated in term of gas concentration under exposure of reducing gases such as H$_2$, NH$_3$and CO at optimum working temperature. Co-doped MoO3 thin film shows the maximum 46.8 % of sensitivity in NH$_3$ and Ni-doped MoO$_3$thin film exhibits 49.7 % of sensitivity in H$_2$.

• Journal of the Korean Chemical Society
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• v.37 no.7
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• pp.635-641
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• 1993

Electrochemical cell, $Pt|air(PO_2=5.3{\times}10^{-3}atm)|Zr_{0.85}Ca_{0.15}O_{1.85}|air(PO_2= 0.21atm)|Pt$, has been designed to characterize the solid electrolyte and the temperature dependence of the electromotive force (EMF) has been measured in a temperature range of 600∼1000${\circ}$C. Solid electrolyte shows pure ionic conduction of the oxygen anion. The Fe-FexO, Co-CoO, Ni-NiO, and Cu2O-CuO electrodes have been prepared by mixing the 1 : 1 mole ratio of each metal and metal oxide and then by heating at 800${\circ}$C for 6 hours. Electrochemical cells, Pt│M(s), $MO(s)|Zr_{0.85}Ca_{0.15}O_{1.85}|air(PO_2=0.21atm)|Pt$, have been designed and the temperature dependence of the EMF has also been measured in the same temperature range. The changes of the thermodynamic state functions for the formation of the metal oxides are calculated from the electromotive forces and their temperature dependences. The material properties of the oxide systems are also discussed with the function changes.

• Journal of the Korean Chemical Society
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• v.32 no.5
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• pp.495-500
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• 1988

The trans effect has been interpreted for a series of trans-[PtNH$_3$Cl$_2$2L] (L = H$_2$O, NH$_3$, Cl$^-$, Br$^-$, I$^-$, CH$_3$ and PH$_3$) and PtCl$_4^{-2}$ by means of our modified-EHMO method. The calculation shows that reduced overlap population(ROP) of Pt-N bond trans to L is decreased with a better trans director. That is, the trans effect has been found to be enhanced with a better trans director. Accordingly, it could be interpreted quantum chemically the trans effect for a general trans-PtTL$_2$X complex.

• Bulletin of the Korean Chemical Society
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• v.9 no.4
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• pp.256-257
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• 1988

• Korean Journal of Materials Research
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• v.10 no.10
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• pp.684-690
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• 2000

In order to study effects of interfacial layers between $Pb(Zr,Til)Q_3(PZT)$ films and electrodes for Metal-Ferroelectric-MetaI(MFM) structure capacitors, we have fabricated the capacitors with the Pt/PZT/interfacial-layer/Pt/$TiO_2/SiO_2$/Si structure. $PbTiO_3(PT)$ interfacial layers were formed by sol-gel deposition and PbO, ZrO, and $TiO_2$ thin layers were deposited by reactive sputtering. $TiO_2$ interface layers result in the finest grains of PZT(crystalline Temp. $600^{\circ}C$) films compare to $PbO_2\;and\;ZrO_2$ layers. However, as the thickness of $TiO_2$ layer increases. PZT thin films become rough and electrical characteristics were deteriorated due to remained anatase phase. On the other hand. PT interface layers result in improved morphology of PZT films and do not significantly change ferroelectric properties. It is a also observed that seed layers at the middle and top of PZT films do not give significant effects on grain size but the PT seed layer at the interface between the bottom electrode and the PZT films results in the small grain size.

• Korean Chemical Engineering Research
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• v.49 no.2
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• pp.168-174
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• 2011

Various La-based perovskite catalysts were prepared by a Pechini method, and they were applied to the low-temperature oxidation of odor compounds exhausted from waste food treatment process for effective deodorization. Quantitative and qualitative analyses of exhausted gas were conducted to measure the amount of major odor compounds with respect to operation time. A standard odor sample composed of major odor compounds was then prepared for use as a feed for oxidation reaction system. Various transition metal(M)-substituted La-based perovskite catalysts ($LaMO_{3}$: M=Cr, Mn, Fe, Co, and Ni) were prepared and applied to the oxidation of odor compounds in order to investigate the $LaNiO_3$ catalyst showed the best catalytic performance. Pt-substituted perovskite catalysts ($LaNi_{1-x}Pt_{x}O_{3}$: x=0, 0.03, 0.1, and 0.3) were then prepared for enhancing the catalytic performance. It was found that $LaNi_{0.9}Pt_{0.1}O_{3}$ catalyst served as the most efficient catalyst. Supported perovskite catalysts ($XLaNi_{0.9}Pt_{0.1}O_{3}/Al_{2}O_{3}$: X=perovskite content(wt%), 0, 10, 20, 30, 40, 50, and 100) were finally applied for the purpose of maximizing the catalytic performance of perovskite catalyst in the low-temperature oxidation reaction. Catalytic performance of $XLaNi_{0.9}Pt_{0.1}O_{3}/Al_{2}O_{3}$ catalysts showed a volcano-shaped curve with respect to perovskite content. Among the catalysts tested, $20LaNi_{0.9}Pt_{0.1}O_{3}$/$Al_{2}O_{3}$ catalyst exhibited the highest conversion of odor compounds of 88.7% at $180^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.41-41
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• 1998

Rare earth metal films have been used as a buffer layer for growing ferroelectric t thin film or a seed layer for magnetic multilayer. But when it was deposited on s semiconductor substrates for the application of magneto-optic (MO) storage media, it i is difficult to exactly measure magnetic cons떠nts due to shunting current, and so it n needs to grow metal films on insulator substrate to reduce such effect. Recently, it w was reported that ultra-thin Pt layer were epitaxially grown on A12O:J by ion beam s sputtering in 비떠 high vacuum and it can be used as a seed layer for the growth of C Co-contained magnetic multilayer. In this stu$\phi$, Pt thin film were epi떠xially grown on AI2D3 ($\alpha$)OJ) by RF magnetron s sputtering. The crystalline structure was analyzed by transmission electron microscope ( (TEM) and Rutherford Back Scattering (RBS)/Ion Channeling. In TEM study, Pt was b believed to be twinned on AI잉3($\alpha$)01) su$\pi$ace about Pt(ll1) plane.Moreover, RBS c channeling spectra showed that minimum scattering yield of Pt(111)/AI2O:J(1$\alpha$)OJ) was 4 4% and Pt(11J)/AI2D3($\alpha$)OJ) had 3-fold symmetry.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.21-26
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• 2005

The field effect transistors (FETs) were fabricated ell $Y_2O_3/Si(100)$ substrates by the conventional memory processes and sol-gel process using $(Bi,La)Ti_3O_{12}(BLT)$ ferroelectric gate materials. The remnant polarization ($2Pr = Pr^+-Pr^-$) int Pt/BLT/Pt/Si capacitors increased from $22 {\mu}C/cm^2$ to $30{\mu}C/ cm^2$ at 5V as the annealing temperature increased from $700^{\circ}C$ to $750^{\circ}C$. There was no drastic degradation in the polarization values after applying the retention read pulse for $10^{5.5}$ seconds. The capacitance-voltage data of $Pt/BLT/Y_2O_3/Si$ capacitors at 5V input voltage showed that the memory window voltage decreased from 1.4V to 0.6V as the annealing temperature increased from $700^{\circ}C$ to $750^{\circ}C$. The leakage current of the $Pt/BLT/Y_2O_3/Si$ capacitors annealed at $750^{\circ}C$ was about $510^{-8}A/cm^2$ at 5V. From the drain currents versus gate voltages ($V_G$) for $Pt/BLT/Y_2O_3/Si(100)$ FET devices, the memory window voltages increased from 0.3V to 0.8V with increasing tile $V_G$ from 3V to 5V.