• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.88-88
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• 2009

$BiFeO_3$(BFO), when forming a solid solution with $BaTiO_3$(BTO), shows structural transformations over the entire compositional range, which not only gives a way to increase structural stability and electrical resistivity but also applies a means to have better ferromagnetic ordering. In this respect, we have prepared and studied 0.7BFO-0.3BTO thin films on $Pt(111)/TiO_2/SiO_2/Si$ substrates by pulsed laser deposition. Various deposition parameters, such as deposition temperature and oxygen pressure, have been optimized to get better quality films. Based on the X-ray diffraction results, thin films were successfully deposited at the temperature of $600^{\circ}C$ and an oxygen partial pressure of 10mTorr. The dielectric, ferroelectric, and magnetic properties have then been characterized. It was found that the films deposited under lower oxygen pressure corresponded to lower leakage current. Magnetism measurement showed an induced ferromagnetism. The microstructures associated with. the magnetic and dielectric properties of this mixed-perovskite solid solutions were observed by transmission electron. microscopy, which revealed the existence of complicated ferroelectric domains, suggested that the weak spontaneous magnetization was closely associated with the decrease in the extent of rhombohedral distortion by a partial substitution of $BaTiO_3$ for $BiFeO_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.836-839
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• 2001

Ba(Zr$_{x}$Ti$_{l-x}$)O$_3$(BZT) thin films of x=0.2 and 150nm thickness were prepared on Pt/SiO$_2$/Si substrate by RF Magnetron Sputtering deposition at several temperature (40$0^{\circ}C$, 50$0^{\circ}C$, $600^{\circ}C$). As the substrates temperature increase, crystallization of the films and high dielectric constants can be obtained. Capacitance of the film deposited at high temperature is more sensitive to the applied voltage than that of the film deposited at low temperature, and the film's breakdown voltage is higher in low temperature.ure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04b
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• pp.3-5
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• 2008

The $SrBi_2Ta_2O_9$ thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing temperatures were studied. Through the x-ray diffraction analysis and the scanning electron microscopy (SEM), it could be observed that crystallization of the SBT thin film started around $650^{\circ}C$ and complete crystallization was accomplished around $750^{\circ}C$ and grains grew from a small spheric form to rod-like. For the leakage current density of the SBT capacitor depending upon various annealing atmospheres, capacitor annealed in the oxygen atmosphere showed the most excellent characteristic, and they were respectively about $2.13\times10^{-9}[A/cm^2]$ at 5V and 340.

• Journal of Convergence for Information Technology
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• v.7 no.5
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• pp.123-128
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• 2017

Nanostructured materials have received attention due to their unique electronic, optical, optoelectrical, and magnetic properties as a results of their large surface-to-volume ratio and quantum confinement effects. Thermal chemical vapor deposition process has attracted much attention due to the synthesis capability of various structured nanomaterials during the growth of nanostructures. In this study, silicon oxide nanowires were grown on Si\$SiO_2$(300 nm)\Pt(5~40 nm) substrates by two-zone thermal chemical vapor deposition with the source material $TiO_2$ powder via vapor-liquid-solid process. The morphology and crystallographic properties of the grown silicon oxide nanowires were characterized by field-emission scanning electron microscope and transmission electron microscope. As results of analysis, the morphology, diameter and length, of the grown silicon oxide nanowires are depend on the thickness of the catalyst films. The grown silicon oxide nanowires exhibit amorphous phase.

• Proceedings of the Korea Crystallographic Association Conference
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• 2003.05a
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• pp.21-21
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• 2003

Pb(Zn/sub 1/3/Nb/sub 2/3/)O₃(PZN)은 전형적인 완화형 강유전체로서 급격하게 상전이를 일으키는 것이 아니라 온도에 따라 완만하게 변화하는 물질이다. 완화형 강유전체의 경우, 저온에서는 ㎛ 이상의 거시분역이 존재하고 일반적인 강유전체와 유사한 특성을 가지지만, 온도가 증가하면서 거시분역이 불안정해 지고 크기가 자가져서 수 nm 크기의 미소 극성 영역으로 나뉘는데, 이때 결정구조, 유전율, 유전 손실등의 온도와 주파수에 따른 변화를 관찰하여 강유전 상전이 현상의 특징을 살펴보고자 하였다. 이를 위해 본 연구에서는 융제법에 의해 PZN-xPT 단결정을 성장시킨 후 온도에 따른 결정구조를 변화를 측정하고, 이러한 결정구조의 변화가 강유전 특성에 미치는 영향에 대해 알아보았다. 순수한 PZN은 전형적인 완화형 강유전체의 상전이거동을 나타내었으며, PT의 함량이 증가하면서 점차 일반적인 강유전체로 전이하는 것이 관찰되었다. 그러나 PZN-0.12PT의 경우도 완전한 일반적 강유전체는 아니었으며 완화형거동을 일부 나타내었다. 모든 조성에서 온도가 감소하면서 국부적인 응력의 증가가 관찰되었으며, 응력의 인가 정도는 H 함량에 따라 증가하였다. 이상의 변화는 순수한 PEW에서 나타나는 미소분역들이 온도의 감소와 H 양의 증가에 따라 정전기적 상호작용을 일으키면서 강유전분역으로 성장하기 때문이었으며, Vogel-fulture식에 따른 유전율 최대온도와 측정주파수간의 관계는 분역들간의 상호작용을 됫받침해주었다.

• Journal of the Semiconductor & Display Technology
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• v.4 no.1 s.10
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• pp.55-59
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• 2005

The ($Sr_{1-x}Ca_{x})Ti_{3}$(SCT) thin film are deposited on Pt-coated electrode (Pt/TiN/$SiO_{2}$/Si) using RF sputtering method. The maximum dielectric constant of SCT thin film is obtained by annealing at 600[$^{\circ}C$]. The temperature properties of the dielectric loss have a value within 0.02 in temperature lunges of -80 $\∼$ +90[$^{\circ}C$]). The capacitance characteristics had a stable value within ${\pm}4\%$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz).

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1477-1479
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• 2000

The annealing treatments on rf magnetron sputtered PZT($Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$) thin films(4000${\AA}$) have been investigated for a structure of PZT/Pt/Ti/ITO coated glass. Crystallization properties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature and time. We were able to obtain a perovskite structure of PZT at 650$^{\circ}C$ and 10min. P-E curves of Pd/PZT/Pt capacitor demonstrate typical hysteresis loops. The measured values of $P_r$, $E_c$ were 15.8[${\mu}C/cm^2$], 95[kV/cm] respectively. Polarization value decrease about 10% after $10^9$ cycles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.136-139
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• 1999

The post-annealing treatments on RF (Radio Frequency) magnetron sputtered PZI(Pb$\_$1.05/(Zr$\_$0.52/, Ti$\_$0.48/)O$_3$thin films(4000${\AA}$) have been investigated. for a structure of PZT/Pt/Ti/SiO$_2$/Si Crystallization pproperties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature. We were able to obtain a perovskite structure of PZT at a low temperature of 600$^{\circ}C$. P-E curves of Pd/PZT/Pt capacitor annealed at 700$^{\circ}C$ demonstrate typical hysteresis loops. The measured values of P$\_$r/, E$\_$c/, by post annealed at 700$^{\circ}C$ were 12.1 ${\mu}$C/$\textrm{cm}^2$, 120KV/cm respectively.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.176-178
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• 2005

Ferroelectric $Bi_{3.25}Nd_{0.75}Ti_{3}O_{12}(BNdT)$ thin films were proposed for capacitor of FeRAM. The BNdT thin films were grown on Pt/Ti $SiO_2/P-Si(100)$ substrates by the RF magnetron sputtering deposition. The dielectric properties of the BNdT were investigated by varying deposition temperatures. Increasing deposition temperature, the (117) peak was increased. An increase of columnar and recrystalline structure of BNdT films with increasing deposition temperature was observed by the Field Emission Scanning Electron Microscopy(FE-SEM). The dielectric constant and dielectric loss of the BNdT thin films with deposition temperature of $600^{\circ}C$ were 319 and 0.05, respectively.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1835-1837
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• 2005

$Bi_{3.25}Y_{0.75}Ti_3O_{12}$[BYT] ferroelectric thin films were deposited by RF-Sputtering method on the $Pt/Ti/SiO_2/Si$. We investigated the effects of processing condition (especially post-annealing) on the structural and dielectric properties of the BYT thin films. The BYT thin films were crystallized well at annealing temperature of $750^{\circ}C$ for 30min. Increasing the annealing temperature, the peak intensity of (117) and c-axis orientation were increased. The calculated lattice constants of BYT thin films were a=0.539nm, b=0.536nm, c=3.288nm. The thickness of the BYT thin films were 350nm. The dielectric constant and dielectric loss at a frequency of 100KHz were 73.3 and 0.021, respectively. The BYT thin films can be used as capacitors in the Ferroelectric Random Access Memory device.