• 제목/요약/키워드: Pt$TiO_{2}$

검색결과 984건 처리시간 0.029초

MOCVD로 증착된 $Bi_4Ti_3O_{12}$ 박막의 미세구조와 강유전성에 Cerium 첨가가 미치는 영향 (The Effect of Ce Substitution on Microstructure and Ferroelectric Properties of $Bi_4Ti_3O_{12}$ Thin Films Prepared by MOCVD)

  • 강동균;박원태;김병호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.12-13
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    • 2006
  • Ferroelectric Cerium-substituted $Bi_4Ti_3O_{12}$ thin films with a thickness of 200 nm were deposited using the liquid delivery metal organic chemical vapor deposition process onto a Pt(111)/Ti/$SiO_2$/Si(100) substrate. At annealing temperature above $600^{\circ}C$, the BCT thin films became crystallized and exhibited a polycrystalline structure. The BCT thin film annealed at $720^{\circ}C$ showed a large remanent polarization ($2P_r$) of $44.56\;{\mu}C/cm^2$ at an applied voltage of 5V. The BCT thin film exhibits a good fatigue resistance up to $1{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied electric field of ${\pm}5\;V$.

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화학 용액 증착법으로 얻어진 $Bi_{4-x}Pr_{0.7}Ti_3O_{12}$ 박막의 강유전성과 미세구조에 관한 연구 (Ferroelectric Properties and Microstructure of Pr-Substituted Bismuth Titanate Prepared by Chemical Solution Deposition)

  • 강동균
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.290-291
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    • 2006
  • The effect of praseodymium substitution on the ferroelectric properties of $Bi_4Ti_3O_{12}$ thin films have been investigated. Ferroelectric Pr-substituted $Bi_4Ti_3O_{12}$ thin films were fabricated by chemical solution deposition onto Pt/Ti/$SiO_2$/Si substrates. The structure and morphology of the films were analyzed using Xray diffraction, and scanning electron microscopy, respectively. About 200-nm-thick BPT films grown at $720^{\circ}C$ exhibited a polycrystalline structure and showed excellent ferroelectric properties with a remanent polarization ($2P_r$) of $28.21\;{\mu}C/cm^2$ at an applied voltage of 5 V. The films a1so demonstrate fatigue-free behavior up to $10^{11}$ read/write switching cycles with 1 MHz bipolar pulses at an electric field of ${\pm}5\;V$.

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(Bi,La)FeO3-PbTiO3 세라믹스의 자전효과 (Magnetoelectric Effects in (Bi,La)FeO3-PbTiO3 Ceramics)

  • 이은구;이종국;장우양;김선재;이재갑
    • 한국재료학회지
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    • 제15권2호
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    • pp.121-125
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    • 2005
  • Magnetoelectric (ME) effects for lanthanum modified $BiFeO_3-PbTiO_3\;(BE-_xPT)$ solid solutions have been investigated. The value of magnetoelectric polarization coefficient, up is 10 times greater than that of $Cr_2O_3$. The results also show that up is due to a linear coupling between polarization and magnetization, and that up is independent of do magnetic bias and ac magnetic field. The ME effect is believed to be significantly enhanced due to breaking of the cycloidal spin state of a long-period spiral spin structure, via randomly distributed charged imperfections.

$Fe_2O_3$$Nb_2O_5$가 첨가된 0.57Pb$(Sc_{1/2}Nb_{1/2})O_3-0.43PbTiO_3$계 세라믹스의 유전특성 (Dielectric Properties of 0.57Pb$(Sc_{1/2}Nb_{1/2})O_3-0.43PbTiO_3$ Ceramics with $Fe_2O_3,\;Nb_2O_5$ Additions)

  • 김창석;이능헌;지승한;김진수;이상훈;전석환
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 D
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    • pp.1713-1716
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    • 1999
  • PSN-PT 2성분계 압전세라믹스의 상도로부터 유전적, 압전적 특성이 양호한 MPB (Morphotropic phase boundary)부근의 조성을 선택하여 도너 도펀트인 $Nb_2O_5$와 억셉터 도펀트인 $Fe_2O_3$를 각각 $0{\sim}9wt%$ 첨가하여 유전특성을 비교, 연구해보았다 시편모두 $1250^{\circ}C$이상에서 이론밀도의 96%이상의 값을 얻을 수 있었고 상온, 1kHz에서 $Fe_2O_3$의 경우 0.1wt% 첨가된 시편에서 ${\varepsilon}_r=2054$의 최대 비유전율이 나타났으며, 0.7wt% 첨가된 시편에서는 $tan{\delta}$=0.49%의 최소 유전 손실값을 얻었다. 도펀트가 첨가됨에 따라 ${\varepsilon}_r$는 점점 감소하는 경향을 보였으며 큐리온도 Tc는 $Fe_2O_3$의 경우에서 더 큰 값이 나타났다. $Nb_2O_5$의 경우 도펀트의 증가에 따라 완만한 Relaxor의 형태로 나타났다.

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Oxygen-deficient Reduced TiO2-X: Surface Properties and Photocatalytic Activity

  • Sinhamahapatra, Apurba;Jeon, Jong-Pil;Yu, Jong-Sung
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2016년도 추계학술대회 논문집
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    • pp.59-75
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    • 2016
  • Reduced or black $TiO_{2-x}$ materials with oxygen-deficiency have been achieved by creating oxygen vacancies and/or defects at the surface using different methods. Fascinatingly, they exhibited an extended absorption in VIS and IR instead of only UV light with bandgap decrease from 3.2 (anatase) to ~1 eV. However, despite the dramatic enhancement of optical absorption in black $TiO_{2-x}$ materials, they have failed to show expected visible light-assisted water splitting efficiency. This was ascribed to the high concentration of the surface defects and/or oxygen vacancies, considered as an electron donor to enhance donor density and improve the charge transportation in black $TiO_2$ can also act as charge recombination centers, which eventually decrease photocatalytic activity. Therefore, a black ot reducd $TiO_2$ material with optimized properties would be highly desired for visible light photocatalysis. In this report, a new controlled magnesiothermic reduction has been developed to synthesize reduced black $TiO_{2-x}$ in the presence $H_2/Ar$ for photocatalytic $H_2$ production from methanol-water system. The material possesses an optimum band gap and band position, oxygen vacancies, and surface defects and shows significantly improved optical absorption in the visible and infrared region. The synergistic effects enable the reduced $TiO_{2-x}$ material to show an excellent hydrogen production ability along with long-term stability under the full solar wavelength range of light and visible light, respectively, in the methanol-water system in the presence of Pt as a co-catalyst. These values are superior to those of previously reported black $TiO_2$ materials. On the basis of all the results, it can be realized that the outstanding activity and stability of the reduced of $TiO_{2-x}$ NPs suggest that a balanced combination of different factors like $Ti^{3+}$, surface defects, oxygen vacancy, and recombination center is achieved along with optimized bandgap and band position during the preparation employing magnesiothermic reduction in the presence of $H_2$. The controlled magnesiothermic reduction in the presence of $H_2$ is one of the best alternative ways to produce active and stable $TiO_2-based$ photocatalyst for $H_2$ production.

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Investigation on Etch Characteristics of FePt Magnetic Thin Films Using a $CH_4$/Ar Plasma

  • Kim, Eun-Ho;Lee, Hwa-Won;Lee, Tae-Young;Chung, Chee-Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.167-167
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    • 2011
  • Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

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증착조건에 따른 SBN 세라믹 박막의 영향 (Influence of SBN Ceramic Thin Film with Deposition Conditions)

  • 김진사;조춘남;배덕권;신철기;최운식;송민종;소병문;김충혁
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.173-174
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    • 2009
  • The SBN thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2/Si$) using RF sputtering method at various deposition conditions. The optimum conditions of RF power and $Ar/O_2$ ratio were 60[W] and 70/30, respectively. Also, The surface rougness showed about 4.33[nm] in RF power 60[W] and $Ar/O_2$ ratio 70/30.

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Effect of Debinding Conditions on the Microstructure of Sintered Pb(Mg1/3Nb2/3)O3-PbTiO3

  • Yun Jung-Yeul;Jeon Jae-Ho;L.Kang Suk-Joong
    • 한국분말재료학회지
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    • 제12권4호
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    • pp.261-265
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    • 2005
  • In order to fabricate complex-shaped polycrystalline ceramics by sintering, organic binders are usually pre-mixed with ceramic powders to enhance the formability during the shape forming process. These organic binders, however, must be eliminated before sintering so as to eliminate the possibilities of poor densification and unusual grain growth during sintering. The present work studies the effect of binder addition on grain growth behavior during sintering of $92(70Pb(Mg_{1/3}Nb_{2/3})O_3-30PbTiO_3))$-8PbO(mol%) piezoelectric ceramics. The microstructures of the sintered samples were examined for various heating profiles and debinding schedules of the binder removal process. Addition of Polyvinyl butyral(PVB) binder promoted abnormal grain growth especially in incompletely debinded regions. Residual carbon appears to change the grain shape from comer-rounded to faceted and enhance abnormal grain growth.

The Effect of a Sol-gel Formed TiO2 Blocking Layer on the Efficiency of Dye-sensitized Solar Cells

  • Cho, Tae-Yeon;Yoon, Soon-Gil;Sekhon, S.S.;Kang, Man-Gu;Han, Chi-Hwan
    • Bulletin of the Korean Chemical Society
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    • 제32권10호
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    • pp.3629-3633
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    • 2011
  • The effect of a dense $TiO_2$ blocking layer prepared using the sol-gel method on the performance of dye-sensitized solar cells was studied. The blocking layer formed directly on the working electrode, separated it from the electrolyte, and prevented the back transfer of electrons from the electrode to the electrolyte. The dyesensitized solar cells were prepared with a working electrode of fluorine-doped tin oxide glass coated with a blocking layer of dense $TiO_2$, a dye-attached mesoporous $TiO_2$ film, and a nano-gel electrolyte, and a counter electrode of Pt-deposited FTO glass. The gel processing conditions and heat treatment temperature for blocking layer formation affected the morphology and performance of the cells, and their optimal values were determined. The introduction of the blocking layer increased the conversion efficiency of the cell by 7.37% for the cell without a blocking layer to 8.55% for the cell with a dense $TiO_2$ blocking layer, under standard illumination conditions. The short-circuit current density ($J_{sc}$) and open-circuit voltage ($V_{oc}$) also were increased by the addition of a dense $TiO_2$ blocking layer.