• Applied Microscopy
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• v.29 no.4
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• pp.471-477
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• 1999

Microstructural observations on the pyrochlore-type $Lu_2Ti_2O_7$ and the similar type of compounds, $In_2(Ti_{1.7}Zn_{0.3})O_{6.7}$ and $In_2(Ti_{1.7}Mg_{0.3})O_{6.7}$ which were made by the isothermal heat-treatment at 1623K for 18 days in Pt tube, were carried out using a top-entry HRTEM working at 200 kV. The modulated structures were found in both compounds, however, not in $Lu_2Ti_2O_7$. From the electron diffraction pattern analysis, the modulated superlattices are incommensurate and are 2.69 times of sublattices along (220) direction. The high resolution TEM images have shown that the superlattices consist of alternate superlattices which are composed of two or three sublattices, resulting in the average of 2.7 times of sublattices in accordance with the analysis of electron diffraction patterns. The crystal structures of both compounds are found to quite similar to those of pyrochlore, however the evidence that the cubic axes are slightly deviated from right angle. The modulated structure has gradually changed to the unmodulated structure induced by electron irradiation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.185-186
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• 2008

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/SiO2/Si) using RF sputtering method at various substrate temperature. The optimum conditions of RF power and Ar/O2 ratio were 60[W] and 70/30, respectively. The rougness showed about 4.33[nm]. Deposition rate of SBN thin films was about 4.17[nm/min]. The capacitance of SBN thin films were increased with the increase of substrate temperature.

• Journal of Korean Society for Atmospheric Environment
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• v.23 no.6
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• pp.699-707
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• 2007

This study was carried out to investigate the reaction characteristics of corona/catalyst hybrid $DeNO_x$ process. The experiments were performed by using the multi-staged pin-to-hole type corona reactor which is enable to control the pin-to-hole gap and to insert the catalyst. Also, used for this study, were catalysts which commercially used Pt, Pd and $TiO_2$, and oxygen and hydrocarbon ($C_2H_4$) as reagents. In the syn-gas test, at high temperatures in the range of $100{\sim}200^{\circ}C$, the corona-only $DeNO_x$ process did not reduce the $NO_x$ concentration effectively. However in the presence of ethylene and oxygen as reagents, the $NO_x$ removal efficiency was better at these high temperatures than corona-only $DeNO_x$ process. In addition, coronal catalyst hybrid process with $TiO_2$ showed more efficiency of $NO_x$ removal than Pt and Pd catalyst, because the $TiO_2$ catalyst was more active than Pt and Pd catalyst to converse the $NO_2$ to $HNO_3$. Furthermore, at the condition of real diesel exhaust gas, the $DeNO_x$ efficiency of corona/catalyst hybrid process was not good at higher reaction temperature and plasma density.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.63-67
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• 1996

In this paper, effect of MnO$_2$ addition(0, 0.1, 0.2, 0.3, 0.5wt%) on the microstructure, dielectric and piezoelectric properties of [xPMW - (0.15-x) PNN] - [yPT-(0.85-y)PZ] (x=0, 0.01, 0.02, 0.03, 0.05, y = 0.35, 0.40, ().425, 0.45, 0.5) were investigated. When Ti/Zr ratio was 1.0, dielectric and piezoelectric properties were highest value. With PMW 2mol%, dielectric constant, dielectric constant (d$\_$33/, d$\_$31/) and electromechanical coupling factor (kp, k$\_$31/) were highest values of 1995, 479, 186(x10$\^$-12/C/N), 0.61, 0.36, respectively. With the addition of MnO$_2$, dielectric constant, electromechanical coupling factor (kp, k$\_$31/) were decreased, but with 0.3wt% MnO$_2$, eletromechanical coupling factor was highest value of 0.63. With the addition of MnO$_2$, mechanical quality(Q$\_$m/ was increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.865-870
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• 2000

In this paper, catalytic combustible gas sensor was fabricated and tested under flammable gases such as CH$_4$and $C_4$H$_{10}$by using Pt coil as a heater and/or temperature sensing element. Fine $Al_2$O$_3$powder was used for a bead and Pt, Pd noble metal powder for a catalyst. Resistance variation of Pt wire was traced by the changes of the gas concentrations in a chamber. Output voltage was then monitored to obtain the gas concentration from the resistance variation. In this experiment, MgO was used to protect cracks in the based and TiO$_2$to increase the sensitivity of the sensors. Water glass was also added to enhance the selectivity to the combustible gases.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.346-349
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• 2002

Ferroelectric $Bi_{4-x}Nd_{x}Ti_{3}O_{12}(BNdT)$ thin films with the composition(x=0.75) were prepared on $Pt/Ti/SiO_{2}/Si(100)$ substrate by metal-organic deposition. The films were annealed by various temperatures from 550 to $650^{\circ}C$ and then the electrical and structural characteristics of BNdT films were investigated for the application of FRAM. Electrical properties such as dielectirc constant, 2Pr and capacitance were quite dependent on the thermal heat treatment. The measured 2Pr value on the BNdT capacitor annealed at $650^{\circ}C$ was $56{\mu}C/cm^{2}$ at an applied voltage of 5V. In fatigue characteristics value remained costant up to $8{\times}10^{10}$ read/write switching cycles at a frequency of 1Mhz regardless of annealing temperatures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.599-603
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• 2003

Ferroelectric B $i_4$$_{-x}$N $d_{x}$ $Ti_3$ $O_{12}$ (BNdT) thin films with the composition(x=0.75) were prepared on Pt/Ti/ $SiO_2$(100) substrate by metal-organic deposition. The films were annealed by various temperatures from 550 to $650^{\circ}C$ and then the electrical and structural characteristics of BNdT films were investigated for the application of FRAM. Electrical properties such as dielectric constant, 2Pr and capacitance were quite dependent on the thermal heat treatment. The measured 2Pr value on the BNdT capacitor annealed at $650^{\circ}C$ was 56$\mu$C/$\textrm{cm}^2$ at an applied voltage of 5V. In fatigue characteristics value remained constant up to 8$\times$10$^{10}$ read/write switching cycles at a frequency of 1Mhz regardless of annealing temperatures.

• Korean Journal of Materials Research
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• v.13 no.4
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• pp.259-265
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• 2003

For the aim of thin microwave absorbers used in mobile telecommunication frequency band, this study proposed a high permittivity dielectrics(λ/4 spacer) coated with ITO thin films of 377 $\Omega$/sq(impedance transformer). High frequency dielectric properties of ferroelectric ceramics, electrical properties of ITO thin films and microwave absorbing properties of ITO/dielectrics were investigated. Ferroelectric materials including $BaTiO_3$(BT), 0.9Pb($Mg_{1}$3/Nb$_{2}$3/)$O_3$-0.1 $PbTiO_3$(PMN-PT), 0.8 Pb (Mg$_{1}$3/$Nb_{2}$3/)$O_3$-0.2 Pb($Zn_{1}$3$_Nb{2}$3/)$O_3$(PMN-PZN) were prepared by ceramic processing for high permittivity dielectrics,. The ferroelectric materials show high dielectric constant and dielectric loss in the microwave frequency range. The microwave absorbance (at 2 ㎓) of BT, 0.9PMN-0.1PT, and 0.8PMN-0.2PZN were found to be 60%(at a thickness of 3.5 mm), 20% (2.5 mm), and 30% (2.5 mm), respectively. By coating the ITO thin films on the ferroelectric substrates with λ/4 thickness, the microwave absorbance is greatly improved. Particularly, when the surface resistance of ITO films is closed of 377 $\Omega$/sq, the reflection loss is reduced to -20 ㏈(99% absorbance). This is attributed to the wave impedance matching controlled by ITO thin films at a given thickness of high permittivity dielectrics of λ/4 (3.5 mm for BT, 2.5 mm for PMN-PT and PMN-PZN at 2 ㎓). It is, therefore, successfully proposed that the ITO/ferroelectric materials with controlled surface resistance and high dielectric constant can be useful as a thin microwave absorbers in mobile telecommunication frequency band.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1248_1249
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• 2009

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method with RF power and Ar/$O_2$ ratio. The size of grain of SBN thin films were increased with the increase of Ar/$O_2$ ratio and RF power respectively. Also, the crystallinity of SBN thin films were increased remarkably at RF power and Ar/$O_2$ ratio were 80[W] and 80/20, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.11a
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• pp.5.1-5.1
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• 2008