• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.301-304
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• 2002

We investigated the structural and electrical properties of Ce-doped Ba($Zr_{0.2}Ti_{0.8}$)$O_3$(BCZT) thin films with a mole fraction of x=0.2 and a thickness about 100 nm. BCZT films were prepared on Pt/Ti/$SiO_2$/Si substrate by a RF magnetron sputtering system. We have measured the thickness profile with Ar/$O_2$ ratio and the surface roughness. It was observed that the oxygen gas, which introduced during the film deposition, have an influence on the roughness of the film and the film roughness was reduced by annealing from 2.33 nm to 2.02 m (RMS at $500^{\circ}C$, Ar:6 scrim, $O_2$:6 sccm). We have found that annealing procedure after top electrode deposit can reduce the dissipation factor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.274-280
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• 1998

Polycrystalline $Sr_2Nb_2O_7$ ceramics with very high Curie temperature were sintered using the powder derived by the chemical coprecipitation method (CCP). The phase evolution and grain-orientation of sintered samples were examined by XRD, while sintering behavior, dielectric properties and polarization were studied by SEM and ferroelectric tester. Extremely high degree of grain-orientation was observed along the (0k0) direction, which resulted in anisotropic dielectric properties of the sintered samples, with the dielectric constant values approaching those for single crystal. Thin film fabrication of $Sr_2Nb_2O_7$ in the pyroniobate family was also attempted on $SiO_2$/Si(100), Pt/$SiO_2$/Si(100), Pt/Ti/$SiO_2$/Si(100) and Pt/$ZrO_2/SiO_2/Si_2(100)$ substrates, using metalorganic decomposition (MOD) process. Neodecanoate precursor solution was prepared by mixing strontium neodecanoate with niobium neodecanoate synthesized from niobium ethoxide. It was found that $Sr_2Nb_2O_7$ single phase appeared in XRD patterns the samples annealed above $950^{\circ}C$. The effect of substrate type on film microstructure and dielectric properties was observed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.361-364
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• 2003

It was investigated that the structural and electrical Properties of Ce-doped Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$ (BCZT) thin films with a mole fraction of x=0.2 and a thickness about 100 nm. BCZT films were prepared on Pt/Ti/SiO$_2$/Si substrate by a RF magnetron sputtering system. We have measured the thickness profile with Ar/O$_2$ ratio and the surface roughness. It was observed that the oxygen gas, which introduced during the film deposition, have an influence on the roughness of the film and the film roughness was reduced by annealing from 2.33 nm to 2.02 nm (RMS at 500 $^{\circ}C$, Ar:6 sccm, $O_2$:6 sccm). It was found that annealing procedure after top electrode deposit can reduce the dissipation factor.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.12
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• pp.2436-2440
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• 2009

In this work, TCO-less dye-sensitized solar cells (DSCs) using Ti-mesh layer is fabricated for high-efficient low-cost solar cell application. The Ti-mesh metal can replace TCO in the photo-electrode part of DSCs, thus the cell structure is composed of a glass/dye sensitized TiO2 particle/ Ti-mesh layer/electrolyte/Pt sputtered counter electrode/ glass. The Ti-mesh electrode with high conductivity can collect electrons from the $TiO_2$ layer and allows the ionic diffusion of $I^-/I_3^-$ through the mesh hole. Thin Ti-mesh ($\sim40{\mu}m$ in thickness) electrode material is processed using rapid prototype method. The efficiency of prepared TCO-less DSCs sample is about 1.45 % ((ff: 0.5, Voc: 0.52V, Jsc: 5.55 $mA/cm^2$).

• Korean Journal of Materials Research
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• v.7 no.7
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• pp.547-558
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• 1997

Pb(Mg$_{1}$3/Nb$_{2}$3)O$_{3}$[PMN]-PbTiO$_{3}$[PT]계 고용체의 상경계조성(MPB)영역에 대해 La을 첨가하여 변성시킨 La변성 (1-x)PMN-xPT(x=0.35) 고용체를 만들어 온도-유전율 특성, 전계유기 분극특성 및 변위특성을 조사하였다. PMN-PT의 상경영역의 조성인 x=0.35에 대해 La함량을 0-10at%까지 변화시켰다. PMN-PT계 고용체에서 PT 의 함량이 증가함에 따라 전계유기변위 및 히스테리시스 특성이 모두 증가하였다. 전계유기변위 값 $\varepsilon$ 는 능면정과 정방정의 공존영역인 MPB(x=0.35)조성에서 가장 높은 값($\varepsilon$ = 2 x $10^{-3}$)을 보여 주었다. MPB조성에 대해 La을 첨가한 계의 전계유기변위를 조사한 결과 La의 첨가량이 적을 때 (La=0-5at%)는 La의 함량이 증가함에 따라 히스테리시스 특성이 감소하였고 $\varepsilon$ 은 증가하여 고성능의 액튜에이터 재료에 적합한 조성물로 기대된다.

• Proceedings of the KAIS Fall Conference
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• 2009.05a
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• pp.894-897
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• 2009

$\gamma-Al_2O_3$, $TiO_2$, ZrO에 Pt, Pd, Rh, Ru의 귀금속촉매를 분산하였으며, 촉매 분산은 과잉용액함침법으로 제조하였다. 저온에서 높은 산화능을 지닌 최소화된 귀금속의 함침량을 도출하기 위하여 연구를 수행하였다. 귀금속 촉매의 조성에 대한 영향을 도출하기 위하여 Rh, Pt, Pd, Ru에 대하여 조성과 함침량에 대하여 연구를 수행하였다. 충전층 반응기 및 모노리스 반응기를 이용한 촉매산화반응 실험결과 50% 전환온도 및 90% 전환온도를 측정한 결과 최적의 조성은 Pt-Rh /$Al_2O_3$ 촉매로 판명되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.403-406
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• 2000

The piezoelectric properties and the doping effect of N $b_2$ $O_{5}$ and Mn $O_2$for 0.95PbZ $r_{x}$ $Ti_{x}$ $O_3$+0.05Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$ compositions have been investigated. In the composition of 0.95PbZ $r_{0.54}$ $Ti_{0.46}$ $O_3$+0.05Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$the Values Of $k_{p}$ find and $\varepsilon$$_{33}$ $^{T}$ are maximized, but $Q_{m}$ Was minimized ( $k_{p}$ =0.51, $Q_{m}$ =1750). The grain size was suppressed and the uniformity of grain was improved with doping concentration of N $b_2$ $O_{5}$ for 0.95PbZ $r_{0.54}$ $Ti_{0.46}$ $O_3$+0.005Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$sample. The values of $k_{p}$ increased and the values of $Q_{m}$ slightly decreased when 0.5 wt% of N $b_2$ $O_{5}$ is doped. And the values of $k_{p}$ was the same formation of the N $b_2$ $O_{5}$ dopant when 0.5 wt% of M $n_2$ $O_{5}$ is doped. But the values of $Q_{m}$ was deeply decreased when 0.5 wt% of Mn $O_2$is doped. As a experiment results under high electric field driving, this piezoelectric ceramics are very stable. Conclusively, piezoelectric ceramic compsiton investigated at this paper is suitable for application to high power piezoelectric devices.. devices..ices.. devices..

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1552-1554
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• 2004

The modeled resonant frequency and electrical properties of Pb(Zr, Ti)$O_3$ (PZT) film with various thicknesses have been investigated in film bulk acoustic wave resonators (FBARs). PZT films and Pt electrodes were fabricated by rf-magnetron sputtering. Fabrication process of electrodes and PZT were patterned by simple lift-off process and then back side of silicon was etched by 45wt% KOH. The crystal structure of PZT films with 0.5, 1 and 2 ${\mu}m$ thickness was investigated by x-ray deflection (XRD) and scanning electron microscopy (SEM). The dielectric constant and performance characteristics of PZT FBAR strongly depended on the film thickness. The resonant frequency of PZT films decreased with increasing film thickness. These sputtered PZT FBAR with simple lift-off process enable us to fabricate high Q values with resonant frequencies. (0.71 - 1.48 GHz).

• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.51-56
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• 2005

Ferroelectric Bi$_{3.35}$Sm$_{0.65}$Ti$_{3}$O$_{12}$(BSmT) thin films were synthesized using a sol-gel process. Bi(TMHD)$_{3}$, Sm$_{5}$(O$^{i}$Pr)13, Ti(O$^{i}$Pr)4 were used as the precursors, which were dissolved in 2­methoxyethanol. The BSmT thin films were deposited on Pt/TiO$_{x}$/SiO$_{2}$/Si substrates by spin­coating. The electrical properties of the thin films were enhanced using rapid thermal annealing process (RTA) at 600 $^{circ}$C for 1 min in O$_{2}$. Thereafter, the thin films were annealed from 600 to 720 $^{circ}$C in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The remanent polarization value of the BSmT thin films annealed at 720 $^{circ}$C after the RTA treatment was 35.31 $\mu$C/cmz at an applied voltage of 5 V.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.123-124
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• 2006

The sandwiched PZT/$BaTiO_3$/PZT thick films were fabricated by two different methods thick films of the PZT by screen printing method on alumina substrateselectrodes with Pt, thin films of $BaTiO_3$ by the spin-coating method on the PZT thick films and once more thick films of the PZT by the screen printing method on the $BaTiO_3$ layer. The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel prepared $BaTiO_3$ coating solution at interface of the PZT thick films, The insertion of BaTi03 interlayer yielded the PZT thick films with homogeneous and dense grain structure with the number of $BaTiO_3$ layers. The leakage current density of the $PZT/BaTiO_3-1$ film is less that $4.41{\times}10^{-9}A/cm^2$ at 5 V.