• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.94.2-94.2
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• 2007

• 전자공학회논문지A
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• 제31A권12호
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• pp.56-63
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• 1994

The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.

• Bulletin of the Korean Chemical Society
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• 제29권3호
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• pp.599-603
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• 2008

The complexes Pd(nbmtp)Cl2 and Pt(nbmtp)Cl2 (nbmptp = 1-nonyl-3,4-bis(methylthio)pyrrole) were prepared and their x-ray structures were determined at room temperature. The four-coordinated metal unit and the pyrrole ring formed a nearly planar geometry. The free ligand dissolved in CH2Cl2 produced two luminescence bands associated with the lone-pair electron of S (l max = 525 nm) and the pyrrole p electron (l max = 388 nm). When the two complexes were dissolved in CH2Cl2, these two luminescence bands were also observed, although the low-energy band was blueshifted. For the crystalline Pt(II) complex, only the strong charge transfer band (l max = 618 nm) from the d* orbital of Pt resulted from excitation of the lone-pair electron of S.

• E2M - 전기 전자와 첨단 소재
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• 제5권2호
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• pp.198-206
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• 1992

(P $b_{1-x}$L $a_{x}$)[(S $b_{1}$2/S $n_{1}$2/) $Ti_{y}$ Z $r_{1-y}$] $O_{3}$(0.leq.x.leq.0.04, 0.25.leq.y.leq.0.40) 세라믹을 1250[.deg.C]에서 2시간동안 유지시켜 일반 소성법으로 제작하였으며 조성 및 L $a_{2}$ $O_{3}$첨가량에 따른 구조적, 압전적 특성을 관찰하였다. L $a_{2}$ $O_{3}$의 첨가량이 3-4[mol%]인 경우 La-rich의 pyrochlore상이 형성되었다. 시편의 평균결정립 크기는 1-2[.mu.n]의 크기를 나타내었으며 PbTi $O_{3}$조성이 증가함에 따라 다소 감소하는 경향을 나타내었다. 각 조성의 시편에 대해 PbTi $O_{3}$ 및 L $a_{2}$ $O_{3}$의 첨가량이 증가할수록 유전상수는 증가하는 경향을 나타내었으며 상전이 온도인 큐리온도는 PbTi $O_{3}$조성이 감소할수록 L $a_{2}$ $O_{3}$첨가량이 증가할수록 감소하는 경향을 나타내었다. 압전 전하계수 및 전기기계 결합계수는 L $a_{2}$ $O_{3}$첨가량 및 PbTi $O_{3}$조성에 따라 증가하였으며 L $a_{2}$ $O_{3}$가 4[mol%]첨가된 0.10PSS-0.40PT-0.50PZ 시편에서 각각 250x$10^{-12}$[C/N], 29.7[%]의 최대값을 나타내었다. 기계적 품질계수는 L $a_{2}$ $O_{3}$첨가량 및 PbTi $O_{3}$조성이 증가할수록 감소하는 경향을 나타내었으며 0.10PSS-0.25PT-0.65PZ 시편에서 138의 최대값을 나타내었다.다.

• East Asian mathematical journal
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• 제25권2호
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• pp.179-196
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• 2009

Let E be a uniformly convex Banach space and K a nonempty closed convex subset which is also a nonexpansive retract of E. For i = 1, 2, 3, let $T_i:K{\rightarrow}E$ be an asymptotically nonexpansive mappings with sequence ${\{k_n^{(i)}\}\subset[1,{\infty})$ such that $\sum_{n-1}^{\infty}(k_n^{(i)}-1)$ < ${\infty},\;k_{n}^{(i)}{\rightarrow}1$, as $n{\rightarrow}\infty$ and F(T)=$\bigcap_{i=3}^3F(T_i){\neq}{\phi}$ (the set of all common xed points of $T_i$, i = 1, 2, 3). Let {$a_n$},{$b_n$} and {$c_n$} are three real sequences in [0, 1] such that $\in{\leq}\;a_n,\;b_n,\;c_n\;{\leq}\;1-\in$ for $n{\in}N$ and some ${\in}{\geq}0$. Starting with arbitrary $x_1{\in}K$, define sequence {$x_n$} by setting {$$x_{n+1}=P((1-a_n)x_n+a_nT_1(PT_1)^{n-1}y_n)$$ $$y_n=P((1-b_n)x_n+a_nT_2(PT_2)^{n-1}z_n)$$ $$z_n=P((1-c_n)x_n+c_nT_3(PT_3)^{n-1}x_n)$$. Assume that one of the following conditions holds: (1) E satises the Opial property, (2) E has Frechet dierentiable norm, (3) $E^*$ has Kedec -Klee property, where $E^*$ is dual of E. Then sequence {$x_n$} converges weakly to some p${\in}$F(T).

• 대한전기학회논문지
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• 제41권5호
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• pp.517-524
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• 1992

In this study, 0.10Pb(SbS11/2TSnS11/2T)OS13T-(0.90-x)PbZrOS13T (0.25 x 0.40) ceramics were fabricated by the atmospheric method. The sintering temperature and time were 1250[$^{\circ}C$] and 2[2hr], respectively. The structureal, dielectric and piezoelectric properties with composition of PbTiOS13T were studied. As the results of XRD ans SEM, the crystal structure of a specimen was rhombohedral, lattice constant and average grain size were decreased with increasing the contents of PbTiOS13T. Relative dielectric constant and Curie temperature were increased with increasing the contents of PbTiOS13T, 0.10PSS-0.40PT-0.50PZ specimen had the highest values of 904 and 265[$^{\circ}C$], respectively. In increasing of PbTiOS13T contents form 25[mol%] to 40[mol%], piezoelectric charge constant and electromechanical coupling factors were increased form 114[pC/N] to 142[pC/N], 17[%] to 24[%] and mechanical quality factor were decreased with increasing the contents of PbTiOS13T. In the 0.10PSS-0.40PT-0.50PZ specimens, those values were 14.2[kV/cm] and 9.43[x10S0-6TC/cmS02T], resectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.403-406
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• 2000

The piezoelectric properties and the doping effect of N $b_2$ $O_{5}$ and Mn $O_2$for 0.95PbZ $r_{x}$ $Ti_{x}$ $O_3$+0.05Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$ compositions have been investigated. In the composition of 0.95PbZ $r_{0.54}$ $Ti_{0.46}$ $O_3$+0.05Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$the Values Of $k_{p}$ find and $\varepsilon$$_{33}$ $^{T}$ are maximized, but $Q_{m}$ Was minimized ( $k_{p}$ =0.51, $Q_{m}$ =1750). The grain size was suppressed and the uniformity of grain was improved with doping concentration of N $b_2$ $O_{5}$ for 0.95PbZ $r_{0.54}$ $Ti_{0.46}$ $O_3$+0.005Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$sample. The values of $k_{p}$ increased and the values of $Q_{m}$ slightly decreased when 0.5 wt% of N $b_2$ $O_{5}$ is doped. And the values of $k_{p}$ was the same formation of the N $b_2$ $O_{5}$ dopant when 0.5 wt% of M $n_2$ $O_{5}$ is doped. But the values of $Q_{m}$ was deeply decreased when 0.5 wt% of Mn $O_2$is doped. As a experiment results under high electric field driving, this piezoelectric ceramics are very stable. Conclusively, piezoelectric ceramic compsiton investigated at this paper is suitable for application to high power piezoelectric devices.. devices..ices.. devices..

• 한국산림과학회지
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• 제65권1호
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• pp.43-47
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• 1984

한국산(韓國産)과 미국산(美國産) 모래밭버섯 균근균(菌根菌)(Pisolithus tinctorius : Pt)의 포자접종효과(胞子接種効果)를 비교(比較)하기 위하여 리기테다 소나무 파종상(播種床)에 접종(接種)을 하였다. methyl bromide로 훈증(薰蒸)된 묘포장(苗圃場)에 $1m^2$당(當)의 1g의 Pt포자(胞子)를 접종(接種)하고 파종(播種)하여 당년(當年) 가을에 묘고생장(苗高生長)을 조사(調査)하였는데 미국(美國) Pt로 접종(接種)된 묘목(苗木)은 한국(韓國) Pt로 접종(接種)된 것보다 묘고(苗高)에서 15% 더 컸으며, 훈증(薰蒸)만 하고 접종처리(接種處理)되지 않은 묘목(苗木)을 중간정도의 생장(生長)을 보였다. 따라서 한국(韓國) Pt의 묘목(苗木)는 별로 없는 것으로 추측된다. 그 다음해 실시한 볕도의 실험(實驗)에서, 토양훈증(土壤薰蒸) 후 미국(美國) Pt 혹은 韓國 Pt로 접종(接種)한 묘목(苗木)은 훈증(薰蒸)없이 자생균근균(自生菌根菌)으로 감양(感梁)된 묘목(苗木)보다 당년(當年)에 묘고(苗高)에서 각각 66%와 60% 더 컸다. 이것은 Pt 접종효과(接種効果)와 토양훈증효과(土壤薰蒸効果)가 함께 나타난 것으로 생각된다. 본 실험(實驗)은 균근균(菌根菌) 포자(胞子)를 접종원(接種原)으로 사용할 수 있는 가능성을 보여주는 것이며, 미국(美國) Pt와 같이 어떤 지역(地域)에 적응한 Pt 균(菌)의 선발(選拔)이 중요하다는 것과 한국(韓國)에서도 우수한 균근균(菌根菌)을 선발(選拔)할 필요가 있다는 것을 나타내고 있다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1793-1795
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• 2004

지금까지 변전소나 개폐소에서 전류, 전압을 계측하는 수단으로서 주로 철심과 권선으로 구성되어진 변류기(CT), 계기용 변압기(PT, PD)가 사용되어 왔다 최근, 2차측의 계측기나 보호 Relay의 Digital화가 진전되어, 또한 이것을 Digital Network으로 종합한 Intelligent 변전소의 구축이 검토되어짐에 따라 Digital Network에 대응한 신형 CT, VD가 요구되어 지고 있다. 상기와 같은 요구로 인해 당사에서는 CT는 검출부에 Rogowski Coil을 적용하며 그 후단에 적분기를 설치하였으면, VD는 검출부에 중간 전극을 이용해서 분압하는 방식인 Capacitive Voltage Divider를 사용하고 증폭기를 삽입하여, 각각 요구되는 전압 신호를 얻었다. 이러한 신형 CT/VD의 적용으로 종래의 CT/PT가 차지하는 공간이 필요 없게 되어 컴팩트한 GIS의 구조가 능하게 되어 있다.

• The Korean Journal of Physiology and Pharmacology
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• 제2권3호
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• pp.395-401
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• 1998

We have synthesized new platinum(II) analogs containing 1,2-diaminocyclohexane (dach) as a carrier ligand, 1,3-bis(diphenylphosphino) propane (DPPP) /1,2-bis(diphenylphosphino)ethane (DPPE) as a leaving group and nitrates to improve solubility. In the present study, the cytotoxicity of $[Pt(trans-l-dach)(DPPP)]\;2NO_3$ (KHPC-001) and $[Pt(trans-l-dach)(DPPE)]\;2NO_3$ (KHPC-002) was evaluated and compared on various P-388 cancer cell lines and porcine kidney cell line ($LLC-PK_1$). The new platinum complexes demonstrated high efficacy on P-388 mouse leukemia cell line as well as cisplatin-resistant (P-388/CDDP) and adriamycin-resistant (P-388/ADR) P-388 cell lines. The intracellular platinum content was measured by a flame atomic absorption spectrophotometer (FAAS), and it was comparable to the results of $IC_{50}$ of the three complexes on $LLC-PK_1$ and P-388/S cells, while only DPPE compound was accumulated in high volume in P-388/ADR and P-388/CDDP cells. While the DNA-interstrand cross-links of KHPC-001, KHPC-002 and cisplatin were similar on P-388/S leukemia cells, these new platinum complexes were much less DNA cross-linking to a kidney derived cell line, $LLC-PK_1$. These results indicate that KHPC-001 and KHPC-002 are a third-generation platinum complexes with potent antitumor activity and low nephrotoxicity.