• KOREAN JOURNAL OF CROP SCIENCE
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• v.58 no.3
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• pp.260-266
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• 2013

The study was carried out to determine the gel pasting properties of barley (Hordeum vulgare L. cv. Geoncheonheugbori) as affected by different proton beam irradiation. The ${\lambda}max$, blue value, and amylose content were significantly associated with increasing proton beam irradiation. The pasting time in barley flour irradiated with proton beam ranged 0.09 to 0.16 min shorter than nonirradiated barley flour. Gel pasting temperature ranged 57.4 to $60.5^{\circ}C$. Gel pasting temperature in barley flour decreased with increasing proton beam irradiation. Proton beam irradiation caused a significant decrease in the onset temperature (To), peak temperature (Tp), conclusion temperature (Tc) and enthalpy change (${\Delta}H$). Gelatinization range (R) in barley starch was more broaden than that of non-irradiated barley starch. Barley starches gave the strong diffraction peak at around $2{\Theta}$ values$15^{\circ}$, $18^{\circ}$, $20^{\circ}$, and $23^{\circ}$ $2{\Theta}$. Peak intensity tended to increase with increased proton beam irradiation. The granule crystallinity is closely associated with decreased amylose and increased amylopectin component. The crystallinity degree of barley starch irradiated with proton beam was significantly increased and it ranged from 24.9 to 32.9% compared to the non-irradiated barley starches. It might be deduced that proton beam irradiation causes significant changes of properties of starch viscosity in rice, especially at high irradiation of proton beam.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.732-736
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• 2009

Protons are irradiated into SOl wafers under total dose of 100 krad, 500 krad, 1 Mrad and 2 Mrad to analyze the irradiation effect. The electrical properties are analyzed by pseudo MOSFET technology after proton irradiation. The wafers are annealed to stabilize generated defects in a nitrogen atmosphere at $300^{\circ}C$ for 1 hour because proton irradiation induces a lot of unstable defects in the surface silicon film. Both negative and positive turn-on voltages are shifted to negative direction after the irradiation. The more proton total dose, the more turn on voltage shifts. It means that positive oxide trap charge is generated in the buried oxide(BOX). The minority carrier lifetime which is analyzed by the drain current transient characteristics decreases with the increase of proton total dose. The proton irradiation makes crystal defects in the silicon film, and consequently, the crystal defects reduce the carrier lifetime and mobility. As these results, it can be concluded that pseudo MOSFET is a useful technology for the analysis of irradiated SOI wafer.

• Corrosion Science and Technology
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• v.20 no.3
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• pp.158-168
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• 2021

Austenitic 316 stainless steel was irradiated with protons accelerated by an energy of 2 MeV at 360 ℃, the various defects induced by this proton irradiation were characterized with microscopic equipment. In our observations irradiation defects such as dislocations and micro-voids were clearly revealed. The typical irradiation defects observed differed according to depth, indicating the evolution of irradiation defects follows the characteristics of radiation damage profiles that depend on depth. Surface oxidation tests were conducted under the simulated primary water conditions of a pressurized water reactor (PWR) to understand the role irradiation defects play in surface oxidation behavior and also to investigate the resultant irradiation assisted stress corrosion cracking (IASCC) susceptibility that occurs after exposure to PWR primary water. We found that Cr and Fe became depleted while Ni was enriched at the grain boundary beneath the surface oxidation layer both in the non-irradiated and proton-irradiated specimens. However, the degree of Cr/Fe depletion and Ni enrichment was much higher in the proton-irradiated sample than in the non-irradiated one owing to radiation-induced segregation and the irradiation defects. The microstructural and microchemical changes induced by proton irradiation all appear to significantly increase the susceptibility of austenitic 316 stainless steel to IASCC.

• Journal of Magnetics
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• v.21 no.2
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• pp.159-163
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• 2016

Antiferromagnet (AFM)/ferromagnet (FM) bilayer structures are widely used in the magnetic devices of sensor and memory applications, as AFM materials can induce unidirectional anisotropy of the FM material via exchange coupling. The strength of the exchange coupling is known to be sensitive to quality of the interface of the AFM/FM bilayers. In this study, we utilize proton irradiation to modify the interface structures and investigate its effect on the magnetic properties of AFM/FM structures, including the exchange bias and magnetic thermoelectric effect. The magnetic properties of IrMn/CoFeB structures with various IrMn thicknesses are characterized after they are exposed to a proton beam of 3 MeV and $1{\sim}5{\times}10^{14}ions/cm^2$. We observe that the magnetic moment is gradually reduced as the amount of the dose is increased. On the other hand, the exchange bias field and thermoelectric voltage are not significantly affected by proton irradiation. This indicates that proton irradiation has more of an influence on the bulk property of the FM CoFeB layer and less of an effect on the IrMn/CoFeB interface.

• Journal of Radiation Industry
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• v.6 no.3
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• pp.223-229
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• 2012

In this study, we investigated the biological damage and stress responses induced by ion beam (proton beam) irradiation as a basis for the development of protective measures against space radiation. We examined the biological effects of proton beam produced by MC-50 cyclotron at KIRAMS on the cultured cells and mice. The proton beam energy used in this study was 34.9 MeV and the absorption dose rate for cells and mice were $0.509Gy\;sec^{-1}$ and $0.65Gy\;sec^{-1}$, respectively. The cell survival rates measured by plating efficiency showed the different sensitivity and dose-relationship between CHO cells and Balb/3T3 cells. HGPRT gene mutation frequency in Balb/3T3 was $15{\times}10^{-6}Gy^{-1}$, which was similar to the reported value of X-ray. When stress signaling proteins were examined in Balb/3T3 cells, $I{\kappa}B-{\alpha}$ decreased markedly whereas p53, phospho-p53, and Rb increased after proton beam irradiation, which implied that the stress signaling pathways were activated by proton beam irradiation. In addition, cellular senescence was induced in IMR-90 cells. In the experiments with C57BL/6 mouse, the immune cells (white blood cells, lymphocytes) in the peripheral blood were greatly reduced following proton beam irradiation whereas red blood cells and platelets showed relatively little change. These results can be utilized as basic data for studying the biological effects of proton beam using MC-50 cyclotron with respect to proton therapy research as well as space radiation research.

• Nuclear Engineering and Technology
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• v.48 no.3
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• pp.758-764
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• 2016

Specimens of stainless steel reactor internals were irradiated with 240 keV protons and 6 MeV Xe ions at room temperature. Nanoindentation constant stiffness measurement tests were carried out to study the hardness variations. An irradiation hardening effect was observed in proton- and Xe-irradiated specimens and more irradiation damage causes a larger hardness increment. The Nix-Gao model was used to extract the bulk-equivalent hardness of irradiation-damaged region and critical indentation depth. A different hardening level under H and Xe irradiation was obtained and the discrepancies of displacement damage rate and ion species may be the probable reasons. It was observed that the hardness of Xe-irradiated specimens saturate at about 2 displacement/atom (dpa), whereas in the case of proton irradiation, the saturation hardness may be more than 7 dpa. This discrepancy may be due to the different damage distributions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1073-1077
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• 2006

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with $1{\times}10^{12}/cm^2$ doze from the back side of the wafer. The I-V, breakdown voltage, and turn-off delay time of the device were analyzed and compared with those of un-irradiated device and e-beam irradiated device which was conventional method for minority carrier lifetime reduction. For proton irradiated device, the breakdown voltage and the on-state voltage were 733 V and 1.85 V which were originally 749 V and 1.25 V, respectively. The turn-off time has been reduced to 170 ns, which was originally $6{\mu}s$ for the un-irradiated device. The proton irradiated device was superior to e-beam irradiated device for the breakdown voltage and the on-state voltage which were 698 V and 1.95 V, respectively, nevertheless turn-off time of proton irradiated device was reduced to about 60 % compared to that of the e-beam irradiated device.

• Korean Journal of Plant Resources
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• v.24 no.3
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• pp.304-308
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• 2011

The survival rate and thermal, crystal, and physicochemical properties of starches in chinese yam tubers irradiated to proton beam were determined. Survival rate was decreased with increased proton beam irradiation. Amylose content of D. opposita starches from different proton beam ranged from 13.2% to 17.8%. D. opposita starch at 5 Gy showed the highest ${\Delta}H_{gel}$ values (12.0 J/g) while D. opposita starch at 25 Gy showed the lowest values (10.1 J/g). Several parameters such as PKV (peak viscosity), HPV (Hot peak viscosity) and CPV (Cooling peak viscosity) decreased with the increase in irradiation dose. The degrees of crystallinity of the D. opposita starches at 5, 10, 15, 20 and 25 Gy were 37.2, 38.3, 38.9, 39.2 and 39.9%, respectively. It might be deduced that proton beam irradiation causes changes of starch, especially at high dose irradiation.

• Journal of the Korean Magnetic Resonance Society
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• v.12 no.2
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• pp.111-118
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• 2008

The mechanism of charge flow has been probed by measuring the $^{1}H$ chemical shift on a proton-irradiated ${KH_2}{PO_4}$ (KDP) single crystal. The proton irradiation caused the increase in $^{1}H$ chemical shift. It can be interpreted as the electronic charge transfer from the proton to oxygen atom, accompanied with the proton displacement along the hydrogen bond. For the high resolution $^{1}H$ chemical shift measurement, CRAMPS (Combined Rotation And Multiple Pulses) technique is utilized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.14-15
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• 2007

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. The proton irradiation was carried out at 5.56 MeV energy from the back side of processed wafers and at 2.39 MeV energy from the front side of the wafers. The on-state and off-state I-V characteristics and switching properties of the device were analyzed and compared with those of un-irradiated device and e-beam irradiated device which was conventional method for minority carrier lifetime reduction. The proton irradiated device by 5.56 MeV energy was superior to e-beam irradiated device for the on-state and off-state I-V characteristics, nevertheless turn-off time of proton irradiated device was superior to that of the e-beam irradiated device.