• Journal of the Korean Society for Precision Engineering
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• v.34 no.2
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• pp.107-114
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• 2017

In this investigation, we describe a metrological technique for surface and thickness profiles of a silicon (Si) wafer by using a 6 degree of freedom (DOF) stitching method. Low coherence scanning interferometry employing near infrared light, partially transparent to a Si wafer, is adopted to simultaneously measure the surface and thickness profiles of the wafer. For the large field of view, a stitching method of the sub-aperture measurement is added to the measurement system; also, 6 DOF parameters, including the lateral positioning errors and the rotational error, are considered. In the experiment, surface profiles of a double-sided polished wafer with a 100 mm diameter were measured with the sub-aperture of an 18 mm diameter at $10\times10$ locations and the surface profiles of both sides were stitched with the sub-aperture maps. As a result, the nominal thickness of the wafer was $483.2{\mu}m$ and the calculated PV values of both surfaces were $16.57{\mu}m$ and $17.12{\mu}m$, respectively.

• Tribology and Lubricants
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• v.11 no.5
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• pp.99-107
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• 1995

This paper reported research results to develop an algorithm of on-lin evaluation of surface profiles and roughness generated by turning. The developed module consisted of computer simulation of surface profiles using mechanism of cutting mark formation and cutting vibrations, and online measurement of cutting vibrations. The relative cutting vibrations between tool and worpkiece were measured through an inductance pickup at the rate of one sample per rotation of the workpiece. The sampling process was monitored using an encoder to avoid conceling out the phase lag between waves. The digital cutting signals from the Analog-to-Digital converter were transferred to the simulation module of surface profile where the surface profiles were generated. The developed algorithm or surface generation in a hard turning was analyzed through computer simulations to consider the stochastic and dynamic nature of cutting process. Cutting tests were performed using AISI 304 Stainless Steel and carbide inserts in practical range of cutting conditions. Experimental results showed good correlation between the surface profiles and roughness obtained using the developed algorithm and the surface texture measured using a surface profilemeter. The research provided the feasibility to monitor surface characteristics during tribelogical tests considering wear effect on surface texture in machining.

• Progress in Superconductivity and Cryogenics
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• v.17 no.1
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• pp.17-20
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• 2015

Coated conductor is an important candidate for power cable applications due to its high current density. Even for DC power cable transmission, we must study the transport properties of HTS tapes after slow and fast discharge. In order to evaluate relation of the magnetic field with applied current we developed a scanning magnetic field measurements system by employing a Hall probe. This work presents the measurements of the magnetic fields above a coated conductor by varying applied current pattern. In the work, a transport current of 100 A, less than the critical current, is applied to YBCO coated conductor. We measured the residual magnetic field distributions after cut off the transport current with slow and fast operations. The results show differences of the magnetic field profiles and the corresponding current profiles by an inverse solution from the magnetic field measurement between these two operations because of the hysteresis of coated conductor excited by the transport current.

• Journal of Korean Society for Atmospheric Environment
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• v.12 no.4
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• pp.459-472
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• 1996

An experimental investigation on the wind flow over smooth bell-shaped two-dimensional hills with hill slopes (the ratio of height to half width) of 0.3 and 0.5 is performed in an atmospheric boundary-layer wind tunnel. Two categories of the models are used in the present investigation; six two-dimensional single-hills, and four continuous double-hills. The measurements of the flow field and surface static-pressure distribution are carried out over the Reynolds number (based on the hill height) of 1.9 $\times 10^4, 3.3 \times 10^4, and 5.6 \times 10^4$. The velocity profiles and turbulence characteristics are measured by the pitot-tube and X-type hot-wire anemometer, respectively. The undisturbed boundary-layer profile on the bottom surface of the wind tunnel is reasonably consistent with the power-law profile with $\alpha = 7.0 (1/\alpha$ is the power-law exponent) and shows good spanwise uniformities. The profiles of turbulent intensity are found to be consistent along the centerline of the wind tunnel. The measured non-dimensional speed-up profiles at the hill crest show good agreements with the predictions of Jackson and Hunt's linear theory. The flow separation occurs in the hill slope of 0.5, and the oil-ink dot method is used to find the reattachment points in the leeside of the hill. The measured reattachment points are compared with the numerical predictions. Comparisons of the mean velocity profiles and surface pressure distributions between the numerical predictions and the experimental results show good agreements.

• The Bulletin of The Korean Astronomical Society
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• v.39 no.1
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• pp.38.2-38.2
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• 2014

Radial light profiles of bars are known to be related to the morphology of their host galaxies in a way that bars in early type disk galaxies show flat radial light profile, while bars in late type disk galaxies show exponential profile. To quantify how flat or steep bar profiles are, we have performed detailed two-dimensional decompositions on 3.6 micron images for 144 barred galaxies from the Spitzer Survey of Stellar Structure in Galaxies (S4G), and then modeled bar profiles with Sersic functions. We find that bars in classical bulge, higher bulge-to-total (B/T) galaxies are flatter than bars in bulgeless, lower B/T galaxies. In particular, we find that the presence of a bulge almost always guarantees that the bar is flat. Conversely, bulgeless galaxies, mostly have bars with steep profiles. This implies that the light profile of bars may be a dynamical age indicator of bars. We also find that the shape of bars are boxy and do not change with B/T. This indicates that as galaxies evolve, bars change their light profile while keeping their outermost shape boxy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• Wind and Structures
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• v.21 no.3
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• pp.289-309
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• 2015

Vertical profiles of mean and fluctuating wind velocities over water waves were studied, by performing Large-Eddy Simulations (LES) on a fully developed turbulent boundary layer over simplified water waves. The water waves were simplified to two-dimensional, periodic and non-evolving. Different wave steepness defined by $a/{\lambda}$ (a : wave amplitude; ${\lambda}$ : wavelength) and wave age defined by $c/U_b$ (c: phase velocity of the wave; $U_b$ : bulk velocity of the air) were considered, in order to elaborate the characteristics of mean and fluctuating wind profiles. Results shows that, compared to a static wave, a moving wave plays a lesser aerodynamic role as roughness as it moves downstream slower or a little faster than air, and plays more aerodynamic roles when it moves downstream much faster than air or moves in the opposite direction to air. The changes of gradient height, power law index, roughness length and friction velocity with wave age and wave amplitude are presented, which shed light on the wind characteristics over real sea surfaces for wind engineering applications.

• Geomechanics and Engineering
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• v.12 no.2
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• pp.223-238
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• 2017

In this study, bearing capacities and settlement profiles of six irregularly shaped footings located on sand have been experimentally and analytically investigated under the effect of axial loading. The main variable considered in the study was the geometry of the footings. The axial loads were applied from the center of gravities of the test specimens. Consequently, the effect of footing shape on the variation of the bearing capacities and settlement profiles have been investigated in this paper. The three dimensional finite element analyses of the test specimens were conducted using the PLAXIS 3D software. The finite element model results are in acceptable agreement with the results obtained using experimental investigation. In addition, the usability of the finite element technique by design engineers to determine the bearing capacities and settlement profiles of irregularly shaped footings was investigated. From the results of the study, it was observed that the geometric properties of the footings significantly influenced the variation of the bearing capacities and settlement profiles.

• Journal of Institute of Control, Robotics and Systems
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• v.11 no.10
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• pp.830-836
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• 2005

Application of microarray technologies which monitor simultaneously the expression pattern of thousands of individual genes in different biological systems results in a tremendous increase of the amount of available gene expression data and have provided new insights into gene expression during drug development, within disease processes, and across species. There is a great need of data mining methods allowing straightforward interpretation, visualization and analysis of the relevant information contained in gene expression profiles. Specially, classifying biological samples into known classes or phenotypes is an important practical application for microarray gene expression profiles. Gene expression profiles obtained from tissue samples of patients thus allowcancer classification. In this research, molecular classification of microarray gene expression data is applied for multi-class cancer using computational biology such gene selection, principal component analysis and fuzzy clustering. The proposed method was applied to microarray data from leukemia patients; specifically, it was used to interpret the gene expression pattern and analyze the leukemia subtype whose expression profiles correlated with four cases of acute leukemia gene expression. A basic understanding of the microarray data analysis is also introduced.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.12 no.1
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• pp.18-26
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• 1999

In this study, the undoped amorphous layers and phosphorus doped amorphous layers are fabricated using LPCVD at 531$^{\circ}C$ with SiH$_4$ gas or at same temperature with PH$_3$ gas during deposition, respectively. The thickness of deposited amorphous layer from this experiments was 5000 ${\AA}$. In this experiments, undoped amorphous layers are deposited with SiH$_4$and Si$_2$H$\_$6/ gas in a low pressure reactor using LPCVD. These amorphous layers can be doped for poly-silicon by phosphorus ion implantation. The experiments of this study are carried out by phosphorus ion implantation with energy 40 keV into P doped and undoped amorphous silicon layers. The distribution of phosphorus profiles are measured by SIMS(Cameca 6f). Recoiling effects and two dimensional profiles are also explained by comparisions of experimental and simulated data. Finally range moments of SIMS profiles are calculated and compared with simulation results.