A Study of Concentration Profiles in Amorphous Silicon by Phosphorus Doping and Ion Implantation

비정질 실리콘에서 인의 도핑과 이온주입에 따른 농도분포에 대한 연구

  • Published : 1999.01.01

Abstract

In this study, the undoped amorphous layers and phosphorus doped amorphous layers are fabricated using LPCVD at 531$^{\circ}C$ with SiH$_4$ gas or at same temperature with PH$_3$ gas during deposition, respectively. The thickness of deposited amorphous layer from this experiments was 5000 ${\AA}$. In this experiments, undoped amorphous layers are deposited with SiH$_4$and Si$_2$H$\_$6/ gas in a low pressure reactor using LPCVD. These amorphous layers can be doped for poly-silicon by phosphorus ion implantation. The experiments of this study are carried out by phosphorus ion implantation with energy 40 keV into P doped and undoped amorphous silicon layers. The distribution of phosphorus profiles are measured by SIMS(Cameca 6f). Recoiling effects and two dimensional profiles are also explained by comparisions of experimental and simulated data. Finally range moments of SIMS profiles are calculated and compared with simulation results.

Keywords

References

  1. The Science and Engineering of Microelectronic Fabrication S. A. Campbell
  2. Technologie hochintegrierter Schaltungen D. Widmann;H. Mader;H. Friedrich
  3. Thin Solid Films no.60 The Kinetics of the Deposition of Silicon by Silane Pyrolysis at Low Temperatures and Atmospheric Pressure W. A. Bryant
  4. J. Cryst. Growth no.54 Low Pressure Deposition of Polycrystalline Silicon from Silane C. H. J. Van Den Brekel;L. J. M. Bollen
  5. J. Electrochem. Soc. no.125 Structure and Stability of Low Pressure Chemically Vapor-Deposited Silicon Films T. I. Kamins;M. M. Mandurah;K. C. Saraswat
  6. J. Electrochem. Soc. no.127 Structure and properties of LPCVD Silicon Films T. I. Kamins
  7. J. Electrochem. Soc. no.126 Phosphorus Doping of Low Pressure Chemically Vapor-Deposited Silicon Films M. M. Mandurah;K. C. Saraswat;T. I. Kamins
  8. J. Appl. Phys. no.51 Dopant Segregation in Polycrystalline Silicon M. M. Mandurah;K. C. Saraswat;C. R. Helms;T. I. Kamins
  9. Solid State Electron no.22 Characterization of Phosphorus Implanted Low Pressure Chemical Vapor Deposited Polycrystalline Silicon G. Yaron
  10. Nucl. Inst. Meth. v.B19/20 Ion Implantation intonon-planar targets: Monte Carlo Simulations and analytical models H. Ryssel;J. Lorenz;W. Kruger
  11. Nucl. Inst. Meth. v.174 A Monte Carlo computer program for the transport of energetic ions in amorphous Targets J. P. Biersack;L. G. Haggmark
  12. Computer Simulation of Ion-Solid Interactions W. Eckstein
  13. User's Guide ICECREM 1992 Fraunhofer Arbeitsgruppe fur Integrierte Schaltungen Artilleriestasse 12-14, 8520 Erlangen ICECREM
  14. Solid State Electronics v.36 no.4 A new stable method for linearization of discretized basic semiconductor equations M. S. Obrecht