Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Relationships between Carrier Lifetime and Surface Roughness in Silicon Wafer by Mechanical Damage

기계적 손상에 의한 실리콘 웨이퍼의 반송자 수명과 표면 거칠기와의 관계

  • 최치영 (경북대학교 무기재료공학과) ;
  • 조상희 (경북대학교 무기재료공학과)
  • Published : 1999.01.01
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Abstract

We investigated the effect of mechanical back side damage in viewpoint of electrical and surface morphological characteristics in Czochralski silicon wafer. The intensity of mechanical damage was evaluated by minority carrier recombination lifetime by laser excitation/microwave reflection photoconductance decay technique, atomic force microscope, optical microscope, wet oxidation/preferential etching methods. The data indicate that the higher the mechanical damage degree, the lower the minority carrier lifetime, and surface roughness, damage depth and density of oxidation induced stacking fault increased proportionally.

Keywords

References

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