• Proceedings of the SAREK Conference
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• 2009.06a
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• pp.1326-1331
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• 2009

Drying process in the cylindrical thin film layer of sludge with the thickness less than a few millimeters has been investigated. Thin film drying is specially designed and used to dry the viscous materials like sewage sludge. The thin film layer of sludge is dried on the metallic cylindrical surface through which thermal energy is supplied to the layer during drying. The wall temperature is assumed to be constant during drying in the present study for the simplification. In order to solve the equations, the mass transfer rate on the drying surface should be determined. The mass flux of evaporated water vapor on the surface is estimated with the formulation given in the literature. The effect of some physical parameters on drying has been examined to figure out the drying characteristics of the sludge layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.370-374
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure ($10^{-4}$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing.

• Journal of Powder Materials
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• v.13 no.1 s.54
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• pp.57-61
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• 2006

The present work illustrates the use of water-soluble cupric salts as ingredients of binder for injection molding of $W-10 wt\%$ Cu. Parts produced are dense, homogeneous and have good surface finish, compared to those produced using conventional binder system. This new binder system provides also process-simplification benefit. $CuCl_2\;and\;Cu(NO_3)_2$ with the purity of $98\%$ was selected for this study. Rapid sintering process involving thermal decomposing was successful in densification for 1h. Final density that is about $93\%$ of theoretical value could be obtained, and are distinguishable from conventionally processed W-Cu composites.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.9 no.5
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• pp.83-89
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• 2010

In this paper, the dynamic response of a CNC 5 Axles machining center was analyzed and then controlled passively by using the dynamic absorber. For the simplification of the theoretical approach, the CNC 5 Axles machining center was modeled as a flexible beam(Bed) having a point mass(Column), two discrete systems(a Table-set and a dynamic absorber). Specifically by using the dynamic absorber, the dynamic response of a Table-set which be caused by the vibration of a flexible beam, was reduced down to the infinitesimal level. The optimal design factors of the dynamic absorber were obtained from the minimization of the cost function. It was found that the natural frequencies of a UT-380 machining center be varied due to the movement of the Table-set. In view of the dynamic response of a Table-set, the larger spring stiffness and mass of the dynamic absorber were found to give the greater reduction.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.5
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• pp.1092-1097
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• 2007

Ontology construction has need of many time and cost. This is why it is difficult to build a commercial semantic web. To solve the problem, we must automatically construct ontology. In this paper, we propose an automatic ontology generation system from web documents containing important informations of the web. The proposed system has two steps. One is simplification process which generates simple sentences from all sentences in the documents. Another is ontology generation process with transfer rules. Our system is very useful fur application domains in which many documents are updated or inserted frequently such as online shopping malls.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.128-132
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure($10^{-4}$ times) When In and. Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing

• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.79-84
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• 2010

Formation of TSV (Through-Si-Via) with an Au seed layer and Cu filling to the via, simplification of bumping process for three dimensional stacking of Si dice were investigated. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process using $SF_6$ and $C_4F_8$ plasmas alternately. The vias were 40 ${\mu}m$ in diameter, 80 ${\mu}m$ in depth, and were produced by etching for 1.92 ks. On the via side wall, a dielectric layer of $SiO_2$ was formed by thermal oxidation, and an adhesion layer of Ti, and a seed layer of Au were applied by sputtering. Electroplating with pulsed DC was applied to fill the via holes with Cu. The plating condition was at a forward pulse current density of 1000 mA/$dm^2$ for 5 s and a reverse pulse current density of 190 mA/$dm^2$ for 25 s. By using these parameters, sound Cu filling was obtained in the vias with a total plating time of 57.6 ks. Sn bumping was performed on the Cu plugs without lithography process. The bumps were produced on the Si die successfully by the simplified process without serious defect.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.5
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• pp.697-704
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• 2003

In this paper, the visual tracking system for arbitrary shaped moving object is proposed. The established tracking system can be divided into model based method that needs previous model for target object and image based method that uses image feature. In the model based method, the reliable tracking is possible, but simplification of the shape is necessary and the application is restricted to definite target mod el. On the other hand, in the image based method, the process speed can be increased, but the shape information is lost and the tracking system is sensitive to image noise. The proposed tracking system is composed of the extraction process that recognizes the existence of moving object and tracking process that extracts dynamic characteristics and shape information of the target objects. Specially, active contour model is used to effectively track the object that is undergoing shape change. In initializatio n process of the contour model, the semi-automatic operation can be avoided and the convergence speed of the contour can be increased by the proposed effective initialization method. Also, for the efficient solution of the correspondence problem in multiple objects tracking, the variation function that uses the variation of position structure in image frame and snake energy level is proposed. In order to verify the validity and effectiveness of the proposed tracking system, real time tracking experiment for multiple moving objects is implemented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.240-241
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• 2007

In general, high temperature superconducting coated conductors have intermediary buffers layer consisting of seed, diffusion barrier and cap layers. Simplification of the oxide materials buffer architecture in the fabrication of high temperature superconducting coated conductors is required because the deposition of multi-layers buffer architecture leads to a longer manufacturing time and a higher cost process of coated conductors. Thus, single buffer layer deposition seems to be important for practical coated conductor manufacturing process. In this study, a single gradient layered buffer deposition process of YZO for low cost coated conductors has been tried using DC reactive sputtering technique. About several thick YZO gradient single buffer layers deposited by DC co-sputtering process were found to act as a diffusion layer.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.17-17
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• 2000

The issue of reflow profiling continues to be a complex topic. The pains often associated with profiling can be reduced greatly if certain guidelines are followed and if there is a strong understanding of the variables that can be encountered during the reflow process. This paper shall discuss the appropriate guidelines and trouble shooting methods for reflow profiling, and in particular shall focus upon the benefits of implementing the linear ramp-to-spike profile. Delta T(T) is defined as the variation of temperature found on an assembly during the reflow process. Too large of a T can result in soldering defects, so to combat T a Ramp-Soak-Spike(RSS) reflow profile often is utilized. However, when using a newer-style reflow oven, the T often is minimized or eliminated, thus, the soak zone of the reflow profile becomes an unnecessary step. Because of this, the implementation of a linear Ramp-To-Spike(RTS) reflow profile should be considered. Benefits such as reduced energy costs, reduced solder defects, increased efficiency, improved wetting, and a simplification of the reflow profile process may be experienced when using the RTS profile. Included in this paper are the suggested process parameters for setting up the RSS and RTS profiles and the chemical and metallurgical reactions that occur at each set point of these profiles. The paper concludes with a discussion and pictures of several profile-related defects. Each of these defects is described, analyzed, and instructions are given for troublshooting these defects.