• The KSFM Journal of Fluid Machinery
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• v.19 no.4
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• pp.39-42
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• 2016

A PFA lined ball valve, which is machined with fluorinated resin PFA to its inner part for improving corrosion resistance, non-stickness, heat-resistance, has been widely used to the chemical/pharmaceutical industries, the semiconductor/LCD manufacturing processes, etc. with the high purity chemicals as working fluid. EPA stated that 60% of all fugitive emissions come from the valve stem packing in a typical petroleum or chemical processing plant. They monitor regulated components for leaks and maintain seal performance at acceptable levels. Korean industrial standards only deals with the bubble test for in-line leakage of valves, which has the detectable leak rate of $10^{-4}$ [$mbar{\cdot}L{\cdot}s^{-1}$], therefore, it is not sufficient to check fugitive emissions. In this study, we conducted Helium leak detection from a PFA lined ball valve and evaluated fugitive emissions according to ISO 15848-1, which has the detectable leak rate of $10^{-9}$ [$mbar{\cdot}L{\cdot}s^{-1}$], for manufacturing the high-reliable PFA lined ball valves against fugitive emissions.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.4
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• pp.435-442
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• 2004

This paper presents a hermetic MEMS on-chip package bonded by a closed-loop AuSn solder-line. We design three different package specimens, including a substrate heated specimen without interconnection-line (SHX), a substrate heated specimen with interconnection-line (SHI) and a locally heated specimen with interconnection-line (LHI). Pressurized helium leak test has been carried out for hermetic seal evaluation in addition to the critical pressure test for bonding strength measurement. Substrate heating method (SHX, SHI) requires the bonding time of 40min. at 400min, while local heating method (LHI) requires 4 min. at the heating power of 6.76W. In the hermetic seal test. SHX, SHI and LHI show the leak rates of 5.4$\pm$6.7${\times}$$^{-10}$ mbar-l/s, 13.5$\pm$9.8${\times}$$^{-10}$ mbar-l/s and 18.5$\pm$9.9${\times}$$^{-10}$ mbar-l/s, respectively, for an identical package chamber volume of 6.89$\pm$0.2${\times}$$^{-10}$. In the critical pressure test, no fracture is found in the bonded specimens up to the applied pressure of 1$\pm$0.1MPa, resulting in the minimum bonding strength of 3.53$\pm$0.07MPa. We find that the present on-chip packaging using a closed AuSn solder-line shows strong potential for hermetic MEMS packaging with interconnection-line due to the hermetic seal performance and the shorter bonding time for mass production.