• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.63-66
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• 2002

Bi-layer Mo films were deposited on sodalime glass substrates using DC magnetron sputtering. As the gas pressure and power density, the resistivity varied from $1.5{\times}10^{-5}$ to $4.97{\times}10^{-4}{\Omega}{\cdot}cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The microstructure of the compressive stress films which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. Also, The highest efficiency was 15.2% on 0.2 $cm^2$. The fill factor, open circuit voltage and short circuit current were 63 %, 570 m V and 42.6 $mA/cm^2$ respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.560-566
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• 2004

In this paper, the electrical and emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma (ICP) with the variation of argon gas pressure and RF power. The RF output was applied to the antenna in the range of 5∼50 W at 13.56 MHz. The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of －100V∼＋100V. When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from 10 to 30 W. Also, when the RF power was increased, electron density was increased. Also, the emission spectrum, Ar- I lins, luminance were investigated. At this time, the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10∼60 mTorr, 10∼300 W, respectively. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1079-1084
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• 2002

Because complex insulation method is used in EHV(extra high voltage) insulation systems, macro Interfaces between two different bulk materials which affect the stability of insulation system exist inevitably. Interface between toughened epoxy and silicone rubber was selected as a interface in EHV insulation systems and tested AC interfacial breakdown properties with variation of many conditions to influence on electrical Properties, such as interfacial pressure, roughness and oil. Specimen was designed to reduce the effect of charge transport from electrode in the process of breakdown and to have the tangential electrical potential with the direction of the interface between epoxy and silicone rubber by using FEM(finite elements method). It could control the interfacial pressure, roughness and viscosity of oil. From the result of this study, it was shown that the interfacial breakdown voltage is improved by increasing interfacial Pressure and oil. In particular, the dielectric strength saturates at certain interracial Pressure level. The decreasing ratio of the interfacial breakdown voltage in non-oiled specimen was increased by the temperature rising, while oiled specimen was not affected by temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.812-816
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• 2000

It is very important to understand the correlation of between inter dielectric(ILD) CMP process and various facility factors supplied to equipment to equipment system. In this paper, the correlation between the various facility factors supplied to CMP equipment system and ILD-CMP process was studied. To prevent the partial over-polishing(edge hot-spot) generated in the wafer edge area during polishing, we analyze various facilities supplied at supply system. With facility shortage of D.I water(DIW) pressure, we introduced an adding purified $N_2$(P$N_2$)gas in polishing head cleaning station for increasing a cleaning effect. DIW pressure and P$N_2$gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. We estimated two factors (DIW pressure and P$N_2$gas) for the improvement of CMP process. Especially, we obtained a uniform planarity in patterned wafer and prohibited more than 90% wafer edge over-polishing. In this study, we acknowledged that facility factors supplied to equipment system played an important role in ILD-CMP process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.735-738
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• 2000

This paper shows experimentally that oxide layer on the p-type Si-substrate can grow at low temperature(500$^{\circ}C$∼600$^{\circ}C$) using high pressure water vapor system. As the result of experiment, oxide layer growth rate is about 0.19${\AA}$/min at 500$^{\circ}C$, 0.43${\AA}$/min at 550$^{\circ}C$, 1.2${\AA}$/min at 600$^{\circ}C$ respectively. So, we know oxide layer growth follows reaction-controlled mechanism in given temperature range. Consequently, granting that oxide layer growth rate increases linearly to temperature over 600$^{\circ}C$, we can expect oxide growth rate is 5.2${\AA}$/min at 1000$^{\circ}C$. High pressure oxidation of silicon is particularly attractive for the thick oxidation of power MOSFET, because thermal oxide layers can grow at relatively low temperature in run times comparable to typical high-temperature, 1 atm conditions. For higher-temperature, high-pressure oxidation, the oxidation time is reduced significantly

• Journal of The Korean Society of Agricultural Engineers
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• v.54 no.5
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• pp.103-111
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• 2012

In this study, the full-scale laboratory model test on utilization of recycled aggregates and crushed stone as vertical drains to use an alternative material of sand in soft ground is performed. The settlement and pore water pressure were measured to evaluate the discharge capacity and filed application, and the results were compared and analyzed through the finite element method. The measured and estimated settlement in all vertical drain materials decreases gradually with the load increase. The measured settlement 6.55~8.63 mm, and the estimated by the Hyperbolic model was 7.45~7.92 mm. So the model used for the analysis can be applied to the settlement estimation of the actual field. The variations of pore water pressure with time showed constantly regardless of the load in all vertical drainage materials. The pore water pressure was similarity to that of sand after rapid drawdown. Therefore, it was applicable to the field because discharge capacity was enough to be an alternative material to the sand which had been being used as the vertical drains.

• 전기의세계
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• v.29 no.8
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• pp.519-523
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• 1980

The traditional mechanical manometer is improved to develop more convenient and precise manometer in continuous measurement of the gas pressure in medium-low vacuum range (1x10$^{-1}$ -10 Torr.) Glass (solid) is used as a detector material of the improved manometer. Using the strain gauge adhered to thin glass board, mechanical strain corresponding to variation of pressure in measurement system is converted into quantity of electricity, and the quantity of electricity is amplified. Experiments have also shown that the improved manometer have more advantages in reproducibility, measured sensibility, and responsible velocity than taditional one.

• Proceedings of the KWS Conference
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• 2000.10a
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• pp.192-195
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• 2000

This paper describes a fundamental investigation of the friction welding condition for pure copper/pure titanium and the effect of friction time, upset pressure on the mechanical and metallurgical properties of friction welding. Under the constant upset pressure, the tensile strength make a little difference with an increase in friction time. At the constant friction time, the tensile strength increased with an increase in upset pressure. The tensile fracture of Cu to Ti joint occurred in Cu base material near interface.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.581-584
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• 2008

At the inlet and outlet differential pressure and The fluid velocity over 32m/s are damaged (Plug, sheet ring, trim) About reduction trim parts of the control valve. AOV of the differential pressure 1,500psi become often the damage in the nuclear power plant. Damages of AOV studied CFD analysis and improvement program. Multi-stage trim designs which decrease a fluid kinetic energy are demanded and AOV parts are demanded case hardening and material change.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.849-853
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• 2002

A specific experimental method, the split Hopkinson pressure bar (SHPB) technique has been widely used to determine the dynamic material properties under the impact compressive loading conditions with strain-rate of the order of 103/s~104/s. In this paper, dynamic deformation behaviors of rubber materials widely used for the isolation of vibration from varying structures under dynamic loading are determined using a Split Hopkinson Pressure Bar technique.