• 한국공작기계학회논문집
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• 제18권1호
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• pp.68-75
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• 2009

A major disadvantage of thermal nanoimprint lithography(NIL) is the thermal cycle, that is, heating over glass transition temperature and then cooling below it, which requires a significant amount of processing time and limits the throughput. One of the methods to overcome this disadvantage is to make the processing temperature lower Accordingly, it is necessary to determine the effects on the processing parameters for thermal NIL at reduced temperatures and to optimize the parameters. This starts with a clear understanding of polymer material behavior during the NIL process. In this work, the squeezing and filling of thin polymer films into nanocavities during the low temperature thermal NIL have been investigated based upon a two-dimensional viscoelastic finite element analysis in order to understand how the process conditions affect a pattern quality; Pressure and initial polymer resist thickness dependency of cavity filling behaviors has been investigated.

• 반도체디스플레이기술학회지
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• 제20권2호
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• pp.82-86
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• 2021

In this study, we investigated the oxygen partial pressure effect of ITO films for electrodes of oxide-based Thin-Film Transistor (TFT). Firstly, we deposited single ITO films on the glass substrate at room temperature. ITO films were prepared at the various partial pressures of oxygen gas 0-7.4% (O₂/(Ar+O₂)). As increasing oxygen on the process of film deposition, electrical properties were improved and optical transmittance increased in the visible light range (300-800 nm). For the electrode of TFT, we fabricated a TFT device (W/L=1000/200 ㎛) with ITO films as the source and drain electrode on the silicon wafer. Except for the TFT device combined with ITO film prepared at the oxygen partial pressure ratio of 7.4%, We confirmed that TFT devices with ITO films via FTS system operated as a driving device at threshold voltage (V_th) of 4V.

• 화약ㆍ발파
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• 제39권1호
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• pp.10-21
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• 2021

암석이나 콘크리트와 같은 취성재료는 재료에 동하중이 가해질 때에는 큰 변형률속도 의존성을 보인다. 이는 취성재료의 역학적 성질이 하중속도에 따라 크게 변화할 수 있음을 의미한다. 이런 성질 때문에 취성재료의 변형률속도 의존성은 발파공학이나 암석동역학 문제를 풀 때 반드시 고려해야 할 중요한 사항들 중의 하나이다. 하지만 불행하게도 국내의 경우, 암석이나 여타의 취성재료들의 동적물성을 특성화하는 연구들은 아직 미진한 상태에 있다. 본 연구에서는 거창 화강암과 고강도 콘크리트 시편의 동적특성을 파악하기 위해 홉킨슨 압력봉을 이용하여 동적 인장시험을 실시하였다. 시험방법으로는 ISRM이 제안한 동적 압열시험과 박리시험을 채택하였다. 일반적으로, 고변형률속도 하에서는 후자의 방법이 더 우수한 것으로 알려져 있다. 이들 두 종류의 시험을 실시한 결과, 시편들의 동적 인장강도가 거의 비슷하게 나타났다. 하지만 저자들은 애초에 시험방법에 따라 측정강도가 상이할 것으로 예상했었다. 따라서 서로 다른 방법을 적용했음에도 측정 강도가 비슷하게 나타난 것은 오히려 시험과정에서 어떤 오류가 개입된 것으로도 볼 수 있으므로 후속연구를 통해 이 부분에 대해 상세조사를 수행할 예정이다.

• 터널과지하공간
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• 제5권3호
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• pp.251-265
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• 1995

One of the most important matters in stress measurement by hydraulic fracturing technique is the determination of the breakdown pressure, reopening pressure, and shut-in pressure, since these values are the basic input data for the calculation of the in-situ stress. The control of the fracture propagation is also important when the hydraulic fracturing technique is applied to the development of groundwater system, geothermal energy, oil, and natural gas. In this study, a laboratory scale hydraulic fracturing device was built and a series of model tests were conducted with cube blocks of Machon gabbro. A new method called 'flatjack method' was adopted to determine shut-in pressure. The initial stress calculated from the shut-in pressure measured by flatjack method showed much higher accuracy than the stress determined by the conventional method. The dependency of the direction of fracture propagation on the state of the initial stresses was measured by introducin g artificial slots in the borehole made by water jet system. Numerical modeling by BEM was also performed to simulate the fracture propagation process. Both results form numerical and laboratory tests showed good agreement. From this study which provides the extensive results on the determination of shut-in pressure and the control of fracture propagation which are the critical issue in the recent hydraulic fracturing, it is conclued that in-situ stress measurement and the control of fracture propagation could be achived more accurately.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 춘계학술대회 논문집
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• pp.1058-1062
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• 1997

Development of laser induced chemical etching technologt with KrF laser are carried out in this study for micromachining of silicon wafer. The paper is devoted to experimental identification of excimer laser induced mechanism of silicon under chlorine pressures(0.02~500torr). Experimental results on pulsed KrF excimer laser etching of silicon in chorine atmosphere are presented. Etching rate dependency on laser fluence and chlorine pressure are discussed on the basis of experimental analysis, it is concluded that accurate digital micro machining process of silicon wafer can achieved by KrF laser induced chemical etching technology.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.167-170
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• 2003

The thermal and hydraulic characteristics of the cooling passage for HTS power cable should be carefully investigated to get the highly reliable and economic operation. In this study, the pressure drop and temperature change of the coolant flowing the corrugated passage was estimated using the simple one-dimensional approach, and the temperature distribution in the radial direction was calculated. The results show the dependency of the mass flow rate, thermal conductivities on the cooling performance of the HTS cable.

• 대한화학회지
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• 제43권3호
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• pp.357-360
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• 1999

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.879-881
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• 1999

Radical and ion densities in a CF4 plasma have been calculated as a function of input power density. 9as pressure and feed gas flow rate using simple 0 dimensional global model. Fluorine atom is found to be the most abundant neutral particle. Highly fragmented species such as CF and CF+ become dominant neutral and ionic radical at the high power condition. As the pressure increases. ion density increases but ionization rate decreases due to the decrease in electron temperature. The fractional dissociation of CF4 feed gas decreases with pressure after increasing at the low pressure range. Electron density and temperature are almost independent of flow rate within calculation conditions studied. The fractional dissociation of CF4 monotonically decreases with flow rate. which results in increase in CF3 and decrease in CF density. The calculation results show that the SiO2 etch selectivity improvement correlates to the increase in the relative density of fluorocarbon ion and neutral radicals which has high C/F ratio.

• Applied Science and Convergence Technology
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• 제25권6호
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• pp.138-144
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• 2016

The discharge characteristics of pulse-driven coplanar micro barrier discharges for an ultraviolet (UV) light source using Ne-Xe mixture have been investigated using a two-dimensional fluid simulation at near-atmospheric pressure. The densities of electrons, the radiative excited states, the metastable excited states, and the power loss are investigated with the variations of gas pressure and the gap distance. With a fixed gap distance, the number of the radiative states $Xe^*(^3P_1)$ increases with the increasing driving voltage, but this number shows weak dependency on the gas when that pressure is over 400 Torr. However, the number of the radiative states increases with the increase of the gap distance at a fixed voltage, while the power loss decreases. Therefore, a long gap discharge has higher efficiency for UV generation than does a short gap discharge. A slight change in the electrode tilt angle enhances the number of radiative species 2 or 3 times with the same operation conditions. Therefore, the intensity and efficiency of the UV light source can be controlled independently by changing the gap distance and the electrode structure.

• 대한화학회지
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• 제16권6호
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• pp.341-348
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• 1972

질소의 흡착 등온곡선을 이용하여 흡착체의 동공부피 분포를 계산하는 과정에서 표면장력의 곡률 의존도 고려 효과를 조사하였다. 즉, 장세헌 등에 의한 표면장력의 곡률 의존도식과 캘빈 식으로부터 주어진 압력에서의 캘빈반경을 구하고, 이것으로부터 흡착체의 동공부피 분포를 계산하였다. 이와 같이하여 얻은 계산 결과를 표면장력의 곡률 의존도를 고려하지 아니한 종래방법에 의한 계산 결과와 비교하였다. 일반적으로 곡률 의존도를 고려해주면 동공부피 분포 곡선의 극대부분이 큰 동공 쪽으로 이동한다. 또한 모세관 응축이 일어나는 상대압력이 종래까지 생각했던 것보다 훨씬 낮아지고 있다. 이러한 효과들은 흡착체의 동공들이 미세해 질수록 더욱 현저하게 일어난다.