• 한국군사과학기술학회지
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• 제24권5호
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• pp.503-510
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• 2021

This paper presents a system that measures the acceleration of the shock caused by the explosion of the precursor warhead for the tandem projectile. The proposed system, which is implemented based on the MIL-STD-810G, Method 517.1, consists of a miniaturized shock measurement device, a cable, accelerometers, and a trigger circuit. The shock measurement device has a size of ¢102 × 171 mm and cable has a length of 3 m. The operational confirmation test is conducted by implementing the measurement system. The Analysis of shock data(accelerometer output data) is carried out using Shock Response Spectrum(SRS), pseudo velocity and plot of acceleration time transient. Through measurement analysis, one can predict the damage of electronics in projectile when precursor warhead is exploded.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2003년도 춘계학술발표대회 요약집
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• pp.197-197
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• 2003

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.585-588
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• 2003

Bi-2223 superconducting wires were fabricated by stacking, drawing process with different precursor powders and different heat-treatment histories. The precursor powders were 2 kinds of Pb content. And a part of the tapes were experienced pre-annealing process which caused tetragonal structure of Bi-2212 phase to orthorhombic structure of it was during drawing process. We confirmed the transformation of Bi-2212 phase from tetragonal structure to orthorhombic structure and reduction of second phases. AC magnetization analysis were performed in order to investigate the fraction of Bi-2223 phase in Bi-2223/Ag HTS tape. The cross sections of 55 filaments and 61 filaments were investigated after rolled in order to understand deformation mechanism of superconducting cores. We could achieve best Ic of 70 A class at the Bi-2223/Ag tape using low Pb content of precursor powder and experienced pre-annealing process. AC magnetization analysis was useful to investigate the fraction of Bi-2223 phase in the Bi-2223/Ag tape.

• 분석과학
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• 제25권1호
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• pp.3-6
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• 2012

내구성 및 내알칼리성이 우수한 다공성 결정화 유리를 제조하기 위하여, zirconium propoxide의 몰농도비가 높은 금속알콕사이드를 출발물질로 하여 $xZrO_2-(1-x)SiO_2$ 구조의 유리전구체를 졸-겔법으로 합성하였다. 본 연구에서는 유리전구체를 500에서 $1,100^{\circ}C$의 범위에서 열처리하여, 열처리 조건이 유리전구체의 결정구조에 미치는 영향을 조사하였다. X-선 회절분석에 의하면, $600^{\circ}C$이상에서 결정피크가 발달하기 시작하였으며, 850$^{\circ}C$이상에 도달하면, 결정성은 확연하게 증가하였다. 그리고 열처리 온도가 증가함에 따라 결정 피크가 발달하며 $2{\theta}$ 값이 $35^{\circ}$, $50^{\circ}$ 및 $60^{\circ}$에서 각각 baddelyite, tetragonal-$ZrO_2$, zircon의 특성피크를 나타냈다.

• 한국분말재료학회지
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• 제23권2호
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• pp.136-142
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• 2016

As precursors of cathode materials for lithium ion batteries, $Ni_{1/3}Co_{1/3}Mn_{1/3}(OH)_2$ powders are prepared in a continuously stirred tank reactor via a co-precipitation reaction between aqueous metal sulfates and NaOH in the presence of $NH_4OH$ in air or nitrogen ambient. Calcination of the precursors with $Li_2CO_3$ for 8 h at $1,000^{\circ}C$ in air produces dense spherical cathode materials. The precursors and final powders are characterized by X-ray diffraction (XRD), scanning electron microscopy, particle size analysis, tap density measurement, and thermal gravimetric analysis. The precursor powders obtained in air or nitrogen ambient show XRD patterns identified as $Ni_{1/3}Co_{1/3}Mn_{1/3}(OH)_2$. Regardless of the atmosphere, the final powders exhibit the XRD patterns of $LiNi_{1/3}Co_{1/3}Mn_{1/3}O_2$ (NCM). The precursor powders obtained in air have larger particle size and lower tap density than those obtained in nitrogen ambient. NCM powders show similar tendencies in terms of particle size and tap density. Electrochemical characterization is performed after fabricating a coin cell using NCM as the cathode and Li metal as the anode. The NCM powders from the precursors obtained in air and those from the precursors obtained in nitrogen have similar initial charge/discharge capacities and cycle life. In conclusion, the powders co-precipitated in air can be utilized as precursor materials, replacing those synthesized in the presence of nitrogen injection, which is the usual industrial practice.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.363-363
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• 2014

Ruthenium (Ru) has attractive material properties due to its promising characteristics such as a low resistivity ($7.1{\mu}{\Omega}{\cdot}cm$ in the bulk), a high work function of 4.7 eV, and feasibility for the dry etch process. These properties make Ru films appropriate for various applications in the state-of-art semiconductor device technologies. Thus, it has been widely investigated as an electrode for capacitor in the dynamic random access memory (DRAM), a metal gate for metal-oxide semiconductor field effect transistor (MOSFET), and a seed layer for Cu metallization. Due to the continuous shrinkage of microelectronic devices, better deposition processes for Ru thin films are critically required with excellent step coverages in high aspect ratio (AR) structures. In these respects, atomic layer deposition (ALD) is a viable solution for preparing Ru thin films because it enables atomic-scale control of the film thickness with excellent conformality. A recent investigation reported that the nucleation of ALD-Ru film was enhanced considerably by using a zero-valent metallorganic precursor, compared to the utilization of precursors with higher metal valences. In this study, we will present our research results on the synthesis and characterization of novel ruthenium complexes. The ruthenium compounds were easy synthesized by the reaction of ruthenium halide with appropriate organic ligands in protic solvent, and characterized by NMR, elemental analysis and thermogravimetric analysis. The molecular structures of the complexes were studied by single crystal diffraction. ALD of Ru film was demonstrated using the new Ru metallorganic precursor and O2 as the Ru source and reactant, respectively, at the deposition temperatures of $300-350^{\circ}C$. Self-limited reaction behavior was observed as increasing Ru precursor and O2 pulse time, suggesting that newly developed Ru precursor is applicable for ALD process. Detailed discussions on the chemical and structural properties of Ru thin films as well as its growth behavior using new Ru precursor will be also presented.

• 분석과학
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• 제21권2호
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• pp.123-128
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• 2008

졸-겔법에 의한 코디어라이트계 전구체(precursor) 제조 시 마그네슘 에톡사이드를 사용하면 황금색을 띠는 불투명한 전구체 용액이 되고, 조핵제인 5%-$Zr(OC_3H_7)_4$ 첨가 시에는 투명한 코디어라이트를 얻을 수 있다. 적외선 흡수 분광 분석에서 $SiO_2$ 성분은 $1045cm^{-1}$에서 흡수 피크를 확인 할 수 있었으며, 동시에 $1140cm^{-1}$과 $940cm^{-1}$의 두 개 피크 분리는 열처리 한 겔체인 $SiO_4$ 신축 진동이고, $Al_2O_3$ 성분은 $580cm^{-1}$과 $680cm^{-1}$의 흡수 피크로 보아 $Al_2O_6$ 망목 구조이고, MgO 성분은 $575cm^{-1}$에서 MgO 신축 진동 임을 알 수 있었다. X-선 회절 분석에서 코디어라이트계 전구체 : 물 몰비 1:5의 경우 반응 소결 온도 $1000^{\circ}C$ 이상에서는 ${\mu}$-cordierite 결정상이 나타남을 알 수 있었고, 코디어라이트계 전구체 : 암모니아 몰비 1:5 건조 겔체의 경우 $1050^{\circ}C$에서는 ${\mu}$-cordierite와 ${\alpha}$-cordierite가 공존 하다가 $1100^{\circ}C$에서는 ${\alpha}$-cordierite만이 존재함을 알 수 있었다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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• pp.118-118
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• 2000

New single-source precursor, [AlCI3:NH2tBu] was synthesized for AlN thin f film processing with AICI3 (Aluminum Chloride) and tBuNH2 (tert-butylamine). AlN thin films for packaging aspplication were deposited on sapphire substrate by a atmosph하ie-pressure MOCVD. In most of other study methyl-based AI precursors w were used for source, But herein Aluminum Chloride was used for as AI source i in order to prevent the carbon contamination in the films and stabilize the p precursor. New precursor showed the very high gas vapor pressure so it allowed to m make the film under atmospheric-pressure and get the high purified film. High q quality AlN thin film was obtained at 700 to $900^{\circ}C$. The new precursor was p purified by a sublimation technique and help to fabricate high purity film. It s showed high vapor pressure, which is able to a critieal factor for the high purity a and atmospheric CVD of AlN. High Quality AIN thin film was obtained at $700-900^{\circ}C$. The AIN film was characterized by RBS

• 한국재료학회지
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• 제9권2호
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• pp.155-162
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• 1999

Zirconia thin films of uniform structure were fabricated by plasma-enhanced metal-organic chemical vapor deposition. Deposition conditions such as substrate temperature were observed to have much influence on the formation of zirconia films, therefore the mechanism of decomposition of $Zr[TMHD]_4$precursor and film growth were examined by XRD, FT-IR etc., as well as the determination of the optimal deposition condition. From temperature dependence on zirconia, below the deposition temperature of 523K, the amorphous zirconia was formed while the crystalline of zirconia with preferred orientation of cubic (200) was obtained above the temperature. Deposits at low temperatures were investigated by FT-IR and the absorption band of films revealed that the zirconia thin film was in amorphous structure and has the same organic band as that of Zr precursor. In case of high temperature, it was found that Zr precursor was completely decomposed and crystalline zirconia was obtained. In addition, at 623K the higher RF power yielded the increased crystallinity of zirconia implying an increase in decomposition rate of precursor. However, it seems that RF power has nothing with the zirconia deposition process at 773K. It was found that the proper bubbler temperature of TEX>$Zr[TMHD]<_4$ precursor is needed along with high flow rate of carrier gas. Through AFM analysis it was determined that the growth mechanism of the zirconia thin film showed island model.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.230.2-230.2
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• 2015

Nanoparticles of magnesium ferrite are used as a heterogeneous catalyst, humidity sensor, oxygen sensor and cure of local hyperthermia. These applications usually utilize the magnetic behavior of these nanoparticles. Moreover, magnetic properties of nanoferrites exhibit rather complex behavior compared to bulk ferrite. The magnetic properties of ferrites are complicated by spins at vortices, surface spins. Reports till date indicate strong dependency on the structural parameters, oxidation state of metal ions and their presence in octahedral and tetrahedral environment. Thus we have carried out investigation on magnesium ferrite nanoparticles in order to study coordination, oxidation state and structural distortion. For present work, magnesium ferrite nanoparticles were synthesized using nitrates of metal ions and citric acid. Fe L-edge spectra measured for these nanoparticles shows attributes of $Fe^{3+}$ in high spin state. Moreover O K-edge spectra for these nanoparticles exhibit spectral features that arises due to unoccupied states of O 2p character hybridized with metal ions. Mg K-edge spectra shows spectral features at 1304, 1307, 1311 and 1324 eV for nanoparticles obtained after annealing at 400, 500, 600, 800, 1000, and $1200^{\circ}C$. Apart from this, spectra for precursor and nanoparticles obtained at $300^{\circ}C$ exhibit a broad peak centered around 1305 eV. A shoulde rlike structure is present at 1301 eV in spectra for precursor. This feature does not appear after annealing. After annealing a small kink appear at ~1297 eV in Mg K-edge spectra for all nanoparticles. This indicates changes in local electronic structure during annealing of precursor. Observed behavior of change in local electronic structure will be discussed on the basis of existing theories.