• Title/Summary/Keyword: Power-assisted

Search Result 447, Processing Time 0.027 seconds

A Study on the Argon Laser Assisted Thermochemical Micro Etching (레이저를 이용한 미세에칭에 관한 연구)

  • 박준민;정해도
    • Proceedings of the Korean Society of Precision Engineering Conference
    • /
    • 2001.04a
    • /
    • pp.844-847
    • /
    • 2001
  • The application of laser direct etching has been discussed, and believed that the process is a very powerful method for micro machining. This study is focused on the micro patterning technology using laser direct etching process with no chemical damage of the material surface. A new introduced concept of energy synergy effect for surface micro machining is the combination of chemically ion reaction and laser thermal process. The etchant can't etch the material in room temperature, and used Ar laser has not power enough to machine. But, the machining is occurred in local area of the material by the combined energy. Using this process, the material is especially prevented from chemical damage for electric property. We have tested this new concept, and achieved a line with $1{mu}m$ width. The Ar laser with 488nm wavelength was used. The material was Si(100) wafer, and etchant is KOH solution. The application and flexibility of this process is in great hopes for MEMS structures and fabrication of the micro electric device parts.

  • PDF

A Cavity-Assisted Atom Detector (CAAD) (캐비티-유도된 원자측정 장치)

  • Chough, Young-Tak;Hyuncheol Nha;Kyungwon An
    • Proceedings of the Optical Society of Korea Conference
    • /
    • 2000.02a
    • /
    • pp.124-125
    • /
    • 2000
  • We introduce a scheme with a maximized efficiency of detecting atoms passing through an optical standing-wave mode cavity. Consider a standing-wave optical cavity illuminated by a weak probe beam through one of its mirrors where the transmission through the other mirror is monitored by a photodetector. If an atom is put in the cavity, the atom-cavity coupling shifts the resonance frequency of the system via the so-called normal mode splitting, and thereby the transmission power will drop. In fact, this type of atom detection scheme has been used in recent single atom trap experiments In practice, however, the field in a standing-wave mode will have a geometrical structure having nodes and antinodes that when the atom traverses the cavity through one of the nodes, there will be no such effect of atom-field interaction. (omitted)

  • PDF

Influence of Parameters on Adhesion Strength on TiN Film by using R.F. Plasma Assisted Chemical Vapor Deposition (PACVD로 증착된 TiN 박막의 밀착성에 관하여)

  • Shin, Y.S.;Kim, M.I.
    • Journal of the Korean Society for Heat Treatment
    • /
    • v.3 no.1
    • /
    • pp.17-24
    • /
    • 1990
  • In this study, TiN film was deposited onto steel by R.F.-PACVD in order to investigate the influence of parameters on the adhesion strength between film and substrate. Experimental results showed that adhesion strength by SAT is different from by optical microscopy. Adhesion strength is increased when the deposition temperature increases and is influenced by R.F. power and electrode distance. Especially heat treatment on the substrate has influenced over the adhesion strength, so it showed the 22 Newtons in adhesion strength by SAT and adhesion strength is decreased when deposition thickeness is thick and hardness is high. Also if the film is thick and high hardness simultaneous, the film was delaminated seriously.

  • PDF

Penning Discharge Assisted Chimical Vapor Deposition of Silicon (Penning 방전을 이용한 실리콘 CVD)

  • 김태훈;이지화
    • Journal of the Korean Vacuum Society
    • /
    • v.5 no.1
    • /
    • pp.77-84
    • /
    • 1996
  • Silicon deposition by Penning discharge was carried out using a mixture of 5% $SiH_4/H_2$ and Ar gas, and the effects of the deposition conditions(gas mixing raito, substrate temperature. discharge power etc.) on the growth rate, crystallinity and morphology of the films deposited were investigated. The magnetic field(800 G) confined the plasma in the region between the two cathodes and enhanced the discharge current by a factor of a few hundreds below 1 mTorr. The magnetic field-enhanced plasma density resulted in a very large deposition rate of about 300 $\AA$/min at $SiH_4$ flow rate of 0.7 sccm and the substrate temperature of $800^{\circ}C$. Characterization of the films by Raman spectroscopy, X-ray diffraction, and scanning electron microscopy revealed that an epitaxial film with a smooth surface grows above 80$0^{\circ}C$, an amorphous film below $400^{\circ}C$, and a rough polycrystalline film at intermediate temperatures.

  • PDF

Fabrication of Freeform Aluminum mirrors for Wide Field Infrared Telescopes

  • Jeong, Byeongjoon;Gwak, Jeongha;Pak, Soojong;Kim, Geon Hee;Lee, Kwang Jo;Park, Junbeom;Lee, Hye-In;Park, Woojin;Ji, Tae-Geun
    • The Bulletin of The Korean Astronomical Society
    • /
    • v.42 no.1
    • /
    • pp.57.3-58
    • /
    • 2017
  • Single Point Diamond Turning (SPDT) is a cost-effective technique to fabricate metallic mirrors. In particular, the servo-assisted diamond turning option is highly useful for the fabrication of freeform surfaces. However, the SPDT process leaves periodic tool marks on machined mirror surfaces, leading to undesirable diffraction effect, as well as the deviation of input beam. In order to solve this problem, we propose new SPDT machining conditions to minimize tool marks. We will also show the results from optical measurement and Power Spectral Density (PSD) analysis to evaluate the expectable performance for applications in wide field infrared telescopes.

  • PDF

The Surface Damage of SBT Thin Film Etched in $Ar/CF_{4}/Cl_{2}$ Plasma ($Ar/CF_{4}/Cl_{2}$ 유도결합 플라즈마에 의한 SBT 박막의 표면 손상)

  • Kim, Dong-Pyo;Kim, Chang-Il;Lee, Cheol-In;Kim, Tae-Hyung;Lee, Won-Jae;Yu, Byung-Gon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.11b
    • /
    • pp.26-29
    • /
    • 2001
  • $SrBi_2Ta_2O_{9}$ thin films were etched at high-density $Cl_2/CF_4/Ar$ in inductively coupled plasma system. The etching of SBT thin films in $Cl_2/CF_4/Ar$ were chemically assisted reactive ion etching. The maximum etch rate was 1300 $\AA$/min at 900W in $Cl_2(20)/CF_4(20)/Ar(80)$. As rf power increase, radicals (F, Cl) and ion(Ar) increase. The influence of plasma induced damage during etching process was investigated in terms of the surface morphology and th phase of X-ray diffraction. The chemical residue was investigated with secondary ion mass sperometry.

  • PDF

Study on Remote Monitoring System for manned island electrification in Korea (하화도 태양광발전시스템의 원격측정 시스템 연구)

  • Lee, Man-Geun;Jung, Myung-Woong;Kim, Bu-Ho
    • Solar Energy
    • /
    • v.16 no.2
    • /
    • pp.7-14
    • /
    • 1996
  • Korean goverment is promoting "the Rural Electrification Project" to replace the diesel generators with PV power supply. The PV-diesel hybrid system are proven more cost effective than that of the existing, especially in the. case of small islands(less than 70 households). In this paper, we intend to introduce the Hahwado island PV system assisted with diesel generator and remote monitoring systems as observator. The purpose of this observator is to have minimum maintenance, to improve economical effciency and system reliability by checking the system periodically at certain time interval, and to make diagnosis of its operating situations. The remote monitoring system was designed to communicate between the central and local site through exclusive telephone line on real-time base, using Window '95 version.

  • PDF

The Effects of Various Apodization Functions on the Filtering Characteristics of the Grating-Assisted SOI Strip Waveguides

  • Karimi, Azadeh;Emami, Farzin;Nozhat, Najmeh
    • Journal of the Optical Society of Korea
    • /
    • v.18 no.2
    • /
    • pp.101-109
    • /
    • 2014
  • In this paper, four apodization functions are proposed for silicon-on-insulator (SOI) strip waveguides with sidewall-corrugated gratings. The effects of apodization functions on the full width at half maximum (FWHM), the side-lobe level, and the reflectivity of the reflection spectrum are studied using the coupled-mode theory (CMT) and the transfer-matrix method (TMM). The results show that applying proposed apodization functions creates very good filtering characteristics. Among investigated apodized waveguides, the apodization functions of Polynomial and z-power have the best performance in reducing side-lobes, where the side-lobe oscillations are entirely removed. Four functions are also used for precise adjustment of the bandwidth. Simulation results show that the minimum and maximum values of the FWHM are 0.74 nm and 8.48 nm respectively. In some investigated functions, changing the apodization parameters decreases the reflectivity which is compensated by increasing the grating length.

A Study on Cutting Mechanism and Heat Transfer Analysis in Laser Cutting Process (FDM을 이용한 레이저 절단 공정에서의 절단 메카니즘 및 절단폭의 해석)

  • 박준홍;한국찬;나석주
    • Transactions of the Korean Society of Mechanical Engineers
    • /
    • v.17 no.10
    • /
    • pp.2418-2425
    • /
    • 1993
  • A two-dimensional transient heat transfer model for reactive gas assisted laser cutting process with a moving Gaussian heat source is developed using a numerical finite difference technique. The kerf width, melting front shape and temperature distribution were calculated by using the boundary-fitted coordinate system to handle the ejection of workpiece material and heat input from reaction and evaporation. An analytical solution for cutting front movement was adopted and numerical simulation was performed to calculate the temperature distribution and melting front thickness. To calculate the moving velocity of cutting front, the normal distribution of the cutting gas velocity was used. The kerf width was revealed to be dependent on the cutting velocity, laser power and cutting gas velocity.

Ultra High Conductivity Diamond Composites

  • Bollina, Ravi;Stoiber, Monika
    • Proceedings of the Korean Powder Metallurgy Institute Conference
    • /
    • 2006.09b
    • /
    • pp.922-923
    • /
    • 2006
  • Thermal management is one of the critical aspects in the design of highly integrated microelectronic devices. The reliability of electronic components is limited not only to operating temperature but also by the thermal stresses caused during the operation. The need for higher power densities calls for use of advanced heat spreader materials. A copper diamond composite has been developed with high thermal conductivity $(\lambda)$ and tailorable coefficient of thermal expansion (CTE). Copper diamond composites are processed via gas pressure assisted infiltration with different copper alloys. Emphasis has been placed on the addition of trace elements in deisgning the copper alloys to facilitate a compromise between thermal conductivity and mechanical adhesion. The interfaces between the alloy and the diamond are related to the thermal properties of these copper composites.

  • PDF