• Title/Summary/Keyword: Power switching IGBTs

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An Improved Gate Control Scheme for Overvoltage Clamping Under High Power IGBTs Switching (IGBT 스위칭시 괴전압 제한을 위한 게이트 구동기법)

  • 김완중;최창호;현동석
    • Proceedings of the KIPE Conference
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    • 1998.07a
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    • pp.323-327
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    • 1998
  • Under high power IGBTs Switching, a large overvoltage is induced across the IGBT module due to the stray inductance in the circuit. This paper proposes a new gate drive circuit for high power IGBTs which can actively suppress the overvoltage across the driven IGBT at turn-off while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage can be limited much effectively at the fault collector current. Experimental results under various normal and fault conditions prove the effectiveness of the proposed.

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A New Active Gate Drive Circuit for High Power IGBTs (대용량 IGBT를 위한 새로운 능동 게이트 구동회로)

  • 서범석;현동석
    • The Transactions of the Korean Institute of Power Electronics
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    • v.4 no.2
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    • pp.111-121
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    • 1999
  • This paper deals with an active gate drive (AGD) technolo밍T for high power IGBTs. It is based on an optimal c combination of several requirements necessmy for good switching performance under hard switching conditions, The s scheme specifically combines together the slow drive requirements for low noise and switching stress and the fast driver requirements for high speed switching and low switching energy loss The gate drive can also effectively dampen oscillations during low cunent turnlongrightarrowon transient in the IGBT, This paper looks at the conflicting requirements of the c conventional gate dlive circuit design and the experimental results show that the proposed threelongleftarrowstage active gate dlive t technique can be an effective solution.

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Constant Frequency Adjustable Power Active Voltage Clamped Soft Switching High Frequency Inverter using The 4th-Generation Trench-Gate IGBTs

  • Miyauchi T.;Hirota I.;Omori H.;Terai H.;Abdullah Al Mamun;Nakaoka M.
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.236-241
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    • 2001
  • This paper presents a novel prototype of active voltage-clamping capacitor-assisted edge resonant soft switching PWM inverter operating at a constant frequency variable power (VPCF) regulation scheme, which is suitable for consumer high-power induction-heating cooking appliances. New generation IGBT with a trench gate is particularly improved in order to reduce conduction loss due to its lowered saturation voltage characteristics. The soft switching load resonant and quasi-resonant inverter designed distinctively using the latest IGBTs is evaluated from an experimental point of view.

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Improved Circuit Model for Simulating IGBT Switching Transients in VSCs

  • Haleem, Naushath Mohamed;Rajapakse, Athula D.;Gole, Aniruddha M.
    • Journal of Power Electronics
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    • v.18 no.6
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    • pp.1901-1911
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    • 2018
  • This study presents a circuit model for simulating the switching transients of insulated-gate bipolar transistors (IGBTs) with inductive load switching. The modeling approach used in this study considers the behavior of IGBTs and freewheeling diodes during the transient process and ignores the complex semiconductor physics-based relationships and parameters. The proposed circuit model can accurately simulate the switching behavior due to the detailed consideration of device-circuit interactions and the nonlinear nature of model parameters, such as internal capacitances. The developed model is incorporated in an IGBT loss calculation module of an electromagnetic transient simulation program to enable the estimation of switching losses in voltage source converters embedded in large power systems.

Single Phase Utility Frequency AC-High Frequency AC Matrix Converter Using One-Chip Reverse Blocking IGBTs based Bidirectional Switches

  • Hisayuki, Sugimura;Kwon, Soon-Kurl;Lee, Hyun-Woo;Mutsuo, Nakaoka
    • Proceedings of the KIEE Conference
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    • 2006.10d
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    • pp.125-128
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    • 2006
  • This paper presents a novel type soft switching PWM power frequency AC-AC converter using bidirectional active switches or single phase utility frequency AC-high frequency AC matrix converter. This converter can directly convert utility frequency AC (UFAC, 50Hz/60Hz) power to high frequency AC (HFAC) power ranging more than 20kHz up to 100kHz. A novel soft switching PWM prototype of high frequency multi-resonant PWM controlled UFAC-HFAC matrix converter using antiparallel one-chip reverse blocking IGBTs manufactured by IXYS corp. is based on the soft switching resonance with asymmetrical duty cycle PWM strategy. This single phase UFAC-HFAC matrix converter has some remarkable features as electrolytic capacitor DC busline linkless topology, unity power factor correction and sine-wave line current shaping, simple configuration with minimum circuit components, high efficiency and downsizing. This series load resonant UFAC-HFAC matrix converter, incorporating bidirectional active power switches is developed and implemented for high efficiency consumer induction heated food cooking appliances in home uses and business-uses. Its operating performances as soft switching operating ranges and high frequency effective power regulation characteristics are illustrated and discussed on the basis of simulation and experimental results.

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A Study on Active Voltage Control of Series Connected IGBTs (IGBT소자 직렬연결 구동 연구)

  • Hong, S.W.;Yang, H.J.;Kim, J.M.;Lee, H.S.;Chang, B.H.;Oh, K.I.
    • Proceedings of the KIEE Conference
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    • 1998.07f
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    • pp.1966-1968
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    • 1998
  • This paper describes a gate drive circuit for series connected IGBTs in high voltage applications. The proposed control criterion of the gate circuit is to actively limit the voltages during switching transients, while minimizing switching transient and losses. In order to achieve the control criterion, an analog closed loop control scheme is adopted. The performance of gate drive circuit is examined experimentally by the series connection of three IGBTs with conventional snubber circuits. The experimental results show the voltage balancing by an active control under wide variation in loads and imbalance conditions.

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Soft-Switched PWM DC-DC High-Power Converter with Quasi Resonant-Poles and Parasitic Reactive Resonant Components of High-Voltage Transformer (부분 공진형 소프트 스위칭 PWM DC-DC 고전압 컨버터)

  • 김용주;신대철
    • The Transactions of the Korean Institute of Power Electronics
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    • v.4 no.4
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    • pp.384-394
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    • 1999
  • This paper deals with a fixed frequency full-bridge inverter type DC-DC high-power converter with high frequency high voltage(HFHV) transformer-coupled stage, which operates under quasi-resonant ZVS transition priciple in spite of a wide PWM-based voltage regulation processing and largely-changed load conditions. This multi-resonant(MR) converter topology is composed of a series capacitor-connected parallel resonant tank which makes the most of parasitic circuit reactive components of HFHV transformer and two additional quasi-resonant pole circuits incorporated into the bridge legs. The soft-switching operation and practical efficacy of this new converter circuit using the latest IGBTs are actually ascertained through 50kV trially-produced converter system operating using 20kHz/30kHz high voltage(HV) transformers which is applied for driving the diagnostic HV X-ray tube load in medical equipments. It is proved from a practical point of view that the switching losses of IGBTs and their electrical dynamic stresses relating to EMI noise can be considerably reduced under a high frequency(HF) switching-based phase-shift PWM control process for a load setting requirements.

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PERFORMANCE EVALUATIONS OF ADVANCED GENERATION IGBTS AND MCT IN SINGLE-ENDED RESONANT INVERTER

  • Ishimaru, N.;Fujita, A.;Hirota, I.;Yamashita, H.;Omori, H.;Nakamizo, Tetsuo;Shirakawa, S.;Nakaoka, Mutsuo.
    • Proceedings of the KIPE Conference
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    • 1998.10a
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    • pp.851-854
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    • 1998
  • In recent years, a cost-effective voltage-source type single-ended resonant-load inverter using MOS gate power switching devices and its related resonant inverter topologies have been commonly used for induction-heated cooking appliances because of relatively-lowered switching losses, simple circuit topology, low cost, compactness and low harmonic current in utility AC side. This paper present some comparative performance evaluations of IGBTs as sample devices in each generation and MOS controlled Thyristor(MCT) incorporated into the voltage-source type single-ended load resonant inverter for induction-heating rice cookers used for consumer power electronic applications, in which the output power can be regulated on the basis of Frequency Modulation Scheme.

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Zero Voltage Soft Switching PWM High-Frequency Inverter with Active Inductor Snubber for Induction Heated Roller in New Type Copy Machine

  • Muraoka S.;Feng Y.L.;Kunimoto H.;Chandhaket S.;Okuno A.;Nakaoka M.
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.75-79
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    • 2001
  • This paper presents a novel version of an active voltage clamped ZVS-PWM high frequency inverter using IGBTs for electromagnetic induction eddy current-based rolling drum heating in new generation copy and printing machines in consumer business use. The operating principle of this inverter circuit and unique features are described herein. Its constant frequency duty cycle (asymmetrical PWM) controlled voltage source quasi-resonant soft switching high frequency inverter employing IGBTs is proposed, which is capable of achieving stable and efficient zero voltage soft switching commutation over a widely specified power regulation range from full power to low power. The operating performances in a steady state of this inverter is discussed and evaluated on basis of simulation and experimental results as an induction heated roller in new generation copy machine.

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Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs

  • Wu, Yu;Sun, Yaojie;Lin, Yandan
    • Journal of Power Electronics
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    • v.14 no.4
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    • pp.788-795
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    • 2014
  • This paper demonstrates the dynamic behaviors of paralleled high power IGBTs using trench and fieldstop technologies. Four IGBTs are paralleled and standard deviation is adopted to represent the imbalance. Experiments are conducted under three different operation conditions and at different temperatures ranging from $-25^{\circ}C$ to $125^{\circ}C$. The experimental results show that operation at very low and very high temperatures usually aggravates the switching behaviors. There is a trade-off between the balance and the losses at low temperatures. These results can help in the design of heat sinks in paralleling applications confronting very low temperatures.