• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.5
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• pp.393-396
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• 2018

Herein, a 94-GHz low-noise amplifier (LNA) using the 65-nm CMOS process is presented. The LNA is composed of a four-stage differential common-source amplifier and impedance matching is accomplished with transformers. The fabricated LNA chip shows a peak gain of 25 dB at 94 GHz and has a 3-dB bandwidth at 5.5 GHz. The chip consumes 46 mW of DC power from a 1.2-V supply, and the total chip area, including the pads, is $0.3mm^2$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.10
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• pp.832-835
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• 2017

In this paper, V-band differential low noise amplifier(LNA) using 65-nm CMOS process for high speed wireless data communication is presented. The LNA is composed of 3-stage common-source differential amplifiers with neutralization of feedback capacitances using MOS capacitors and impedance matching utilizing transformers. The fabricated LNA has a peak gain of 23 dB at 63 GHz and 3 dB bandwidth of 6 GHz. The chip area of LNA is $0.3mm^2$ and the LNA consumes 32 mW DC power from 1.2 V supply voltage.

• Proceedings of the IEEK Conference
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• summer
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• pp.199-203
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• 2004

In this paper, we only describe the digital block of two-channel 18-bit analog-to-digital (A/D) converter employing sigma-delta method and xl28 decimation. The device contains two fourth comb filters with 1-bit input from sigma­delta modulator. each followed by a digital half band FIR(Finite Impulse Response) filters. The external analog sigma-delta modulators are sampled at 6.144MHz and the digital words are output at 48kHz. The fourth-order comb filter has designed 3 types of ways for optimal power consumption and signal-to-noise ratio. The following 3 digital filters are designed with 12tap, 22tap and 116tap to meet the specification. These filters eliminate images of the base band audio signal that exist at multiples of the input sample rate. We also designed these filters with 8bit and 16bit filter coefficient to analysis signal-to-noise ratio and hardware complexity. It also included digital output interface block for I2S serial data protocol, test circuit and internal input vector generator. It is fabricated with 0.35um HYNIX standard CMOS cell library with 3.3V supply voltage and the chip size is 2000um by 2000um. The function and the performance have been verified using Verilog XL logic simulator and Matlab tool.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.505-506
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• 2006

In this paper, the linearization technique for CMOS low-noise amplifier (LNA) using the derivative superposition method through the multiple gated transistors configuration is presented. LNA based on 0.13um RF CMOS process has been implemented with a modified cascode configuration using multiple gated common source transistors to fulfill a high linearity. Compared with a conventional cascode type LNA, the third order input intercept point (IIP3) per DC power consumption (IIP3/DC) is improved by 3.85 dB. The LNA achieved 2.5-dBm IIP3 with 13.4-dB gain, 3.6 dB NF at 2.4 GHz consuming 8.56 mA from a 1.5-V supply.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.499-500
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• 2006

This paper presents a fast switching CMOS frequency synthesizer with a new coarse tuning method for PHS applications. To achieve the fast lock-time and the low phase noise performance, an efficient bandwidth control scheme is proposed. Charge pump up/down current mismatches are compensated with the current mismatch compensation block. Also, the proposed coarse tuning method selects the optimal tuning capacitances of the LC-VCO to optimize the phase noise and the lock-time. The measured lock-time is about $20{\mu}s$. This chip is fabricated with $0.25{\mu}m$ CMOS technology, and the die area is $0.7mm{\times}2.1mm$. The power consumption is 54mW at 2.7V supply voltage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.12
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• pp.45-51
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• 2011

This paper presents a wideband low-noise amplifier (LNA) covering 800MHz~5.8GHz for various wireless communication standards by utilizing in a 0.13um CMOS technology. Particularly, the LNA consists of two stages to improve the low-noise characteristics, that is, a cascode input stage and an output buffer with noise cancellation technique. Also, a feedback resistor is exploited to help achieve wideband impedance matching and wide bandwidth. Measure results demonstrate the bandwidth of 811MHz~5.8GHz, the maximum gain of 11.7dB within the bandwidth, the noise figure of 2.58~5.11dB. The chip occupies the area of $0.7{\times}0.9mm^2$, including pads. DC measurements reveal the power consumption of 12mW from a single 1.2V supply.

• ETRI Journal
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• v.30 no.1
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• pp.33-46
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• 2008

This paper presents the experimental results of a low-power low-cost RF transceiver for the 915 MHz band IEEE 802.15.4b standard. Low power and low cost are achieved by optimizing the transceiver architecture and circuit design techniques. The proposed transceiver shares the analog baseband section for both receive and transmit modes to reduce the silicon area. The RF transceiver consumes 11.2 mA in receive mode and 22.5 mA in transmit mode under a supply voltage of 1.8 V, in which 5 mA of quadrature voltage controlled oscillator is included. The proposed transceiver is implemented in a 0.18 ${\mu}m$ CMOS process and occupies 10 $mm^2$ of silicon area.

• ETRI Journal
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• v.31 no.6
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• pp.717-724
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• 2009

This paper describes a 1.2 V 12 b 60 MS/s CMOS analog front-end (AFE) employing low-power and flexible design techniques for image signal processing. An op-amp preset technique and programmable capacitor array scheme are used in a variable gain amplifier to reduce the power consumption with a small area of the AFE. A pipelined analog-to-digital converter with variable resolution and a clock detector provide operation flexibility with regard to resolution and speed. The AFE is fabricated in a 0.13 ${\mu}m$ CMOS process and shows a gain error of 0.68 LSB with 0.0352 dB gain steps and a differential/integral nonlinearity of 0.64/1.58 LSB. The signal-to-noise ratio of the AFE is 59.7 dB at a 60 MHz sampling frequency. The AFE occupies 1.73 $mm^2$ and dissipates 64 mW from a 1.2 V supply. Also, the performance of the proposed AFE is demonstrated by an implementation of an image signal processing platform for digital camcorders.

• The Transactions of the Korean Institute of Power Electronics
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• v.21 no.1
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• pp.58-64
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• 2016

This study presents a design method for a single-loop voltage controller that is suitable for an arbitrary waveform generator (AWG). The voltage control algorithm of AWG should ensure high dynamic performance and should attain sufficient robustness to disturbances such as inverter nonlinearity, sensor noise, and load current. By analyzing the power circuit of AWG, control limitation and control target are presented to improve the dynamic performance of AWG. The proposed voltage control algorithm is composed of a single-loop output voltage control, an inverter current feedback term to improve transient response, and a load current feedforward term to prevent voltage distortion. The guideline for setting control gain is presented based on output filter parameters and digital time delay. The performance of the proposed algorithm is proven by experimental results through comparison with the conventional algorithm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.255-260
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• 2018

In recent years, increasing electricity use has led to considerable interest in green energy. In order to effectively supply, cut off, and operate an electric power system, many electric power facilities such as gas insulation switch (GIS), cable, and large substation facilities with higher densities are being developed to meet demand. However, because of the increased use of aging electric power facilities, safety problems are emerging. Electromagnetic wave and leakage current detection are mainly used as sensing methods to detect live-line partial discharges. Although electromagnetic sensors are excellent at providing an initial diagnosis and very reliable, it is difficult to precisely determine the fault point, while leakage current sensors require a connection to the ground line and are very vulnerable to line noise. The partial discharge characteristic in particular is accompanied by statistical irregularity, and it has been reported that proper statistical processing of data is very important. Therefore, in this paper, we present the results of analyzing ${\Phi}-q-n$ cluster distributions of partial discharge characteristics by using K-means clustering to develop an expert partial discharge diagnosis system generated in a GIS facility.