• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.9 no.5
• /
• pp.51-56
• /
• 1995

The transistors of single phase 3 level PWM Inverter compose output power transistors and neutral point clamping transistors, which are NPN transistors. Waveforms of driving signals for this are PWM waves for power transistors and period operating waves for neutral point clamping transistors, which signals made W-type modulation from rectangular and sine wave. The output power transistors operate at ON-time complementary and neutral point clamping transistors operate at OFF-time complementary respectively. Therefore, each transistors operate in half period at parallel. Characteristics of this inverter circuit is parallel switching method about series switching method of general inverter. As modulation of 3 level drive signals made from full-wave rectifier of sine wave and rectangular wave, which are level wave about 3 level of complementary transistor inverter. So, this circuit composed complementary operation inverter of NPN transistors only compare with PNP-NPN complementary inverter, which have high power 3 level inverter of complementary operation.

• Proceedings of the KIEE Conference
• /
• 2002.11d
• /
• pp.286-293
• /
• 2002

Photovoltaic systems normally use a maximum power point tracking (MPPT) technique to continuously deliver the highest possible power to the load when variations in the insolation and temperature occur. A simple method of tracking the maximum power points (MPPs) and forcing the boost converter system to operate close to these Points is presented through deriving small-signal model and transfer function of boost converter. This paper aims at modeling boost converter including equivalent series resistance of input reservoir capacitor by state-space-averaging method and PWM switch model. In the future, properly designed controller for compensation will be constructed in real system for maximum photovoltaic power tracking control.

• Computational Structural Engineering
• /
• v.6 no.3
• /
• pp.89-97
• /
• 1993

General formulation to analyse the rectangular thin plate on a soil medium by energy method is developed. In the problem, Boussinesque's formular needs to be integrated after assuming the contact stress distribution. Two different functions, i.e., power series and Chebychev polynomials are used to approximate the contact stress distribution. It was found that Chebychev polynomials are better function to describe the contact stress than power series. Chebychev polynomials considering stress singularity around plate boundary is recommended as the desirable shape function for future research.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.35 no.7
• /
• pp.272-277
• /
• 1986

The system that follows to the resonance frequency of high frequency MOSFET inverter and varies according to the changes of load characteristics is proposed. Also we suggested a method how to select the resonant load type between series and parallel circuit for a given inverter type. It leads to the conclusion that in the case of high impedance loads, parallel resonant circuits are preferable, on the other hand, for low impedance loads, series resonant circuits are more preferable. For frequency tracking, a PLL circuit is used as main control element to detect the phase difference of current and voltage of load. The realized apparatus composed of control circuit and voltage type full-bridged MOSFET elements as main parts of inverter. A stable frequency follow-up characteristics are obtained for 1.2MHz, 1.5KW high frequency output and power is always supplied to the load with unity power factor.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.5 no.1
• /
• pp.39-45
• /
• 2000

최근에 전력용 반도체 스위치의 정격이 커지면서 IGBT와 같은 소자는 그 편리성과 대용량화로 점차 많은 응용분야에 이용되고 있다. 특히 보다 높은 전압 정격을 용구하는 중·대용량 분야, 소용량이면서 고압 정격을 요구하는 분야의 저가의 전력용 반도체 고압 스위치가 요구되는 분야 등에서 높은 정격을 가지는 IGBT스위치를 구현하기 위하여 그 소자들간의 직렬로 연결하는 것이 필수적이다. 본 논문에서는 수 kV의 동작전압을 가지는 스위치를 실현하기 위하여 기존의 직렬 연결된 IGBT에 제안된 보조회로를 삽입하였다. 본 논문에서는 IGBT를 이용한 고압스위칭 동작원리와 그 기능을 검증하기 위해 4개의 IGBT를 직렬연결한 3kV/45A급 스위치를 제작하여 과도상태 및 정상상태에서의 전압 분배를 실험하였다.

• Steel and Composite Structures
• /
• v.9 no.5
• /
• pp.473-497
• /
• 2009

For the spatially coupled free vibration analysis of composite box beams resting on elastic foundation under the axial force, the exact solutions are presented by using the power series method based on the homogeneous form of simultaneous ordinary differential equations. The general vibrational theory for the composite box beam with arbitrary lamination is developed by introducing Vlasov°Øs assumption. Next, the equations of motion and force-displacement relationships are derived from the energy principle and explicit expressions for displacement parameters are presented based on power series expansions of displacement components. Finally, the dynamic stiffness matrix is calculated using force-displacement relationships. In addition, the finite element model based on the classical Hermitian interpolation polynomial is presented. To show the performances of the proposed dynamic stiffness matrix of composite box beam, the numerical solutions are presented and compared with the finite element solutions using the Hermitian beam elements and the results from other researchers. Particularly, the effects of the fiber orientation, the axial force, the elastic foundation, and the boundary condition on the vibrational behavior of composite box beam are investigated parametrically. Also the emphasis is given in showing the phenomenon of vibration mode change.

• KIEE International Transactions on Power Engineering
• /
• v.4A no.3
• /
• pp.141-145
• /
• 2004

FACTS devices, such as the Thyristor Controlled Series Compensator (TCSC) and Static Var Compensators (SVC), can help increase system load margin to improve static voltage stability. In power systems, because of the high cost and the effect value, the optimal placement for FACTS devices must be determined. This paper investigates the use of the series device (SVC) and the parallel device (TCSC) from the point of load margin to increase voltage stability. It considers the sensitivity of load margin to the line reactance and eigenvector of the collapse. The study has been carried out on the IEEE 14 Bus Test System to verify the validity and efficiency of the method. It reveals that incorporation of FACTS devices significantly enhance load margin as well as system stability.

• Structural Engineering and Mechanics
• /
• v.41 no.5
• /
• pp.605-615
• /
• 2012

In this paper, guided circumferential wave propagating in an orthotropic viscoelastic cylindrical curved plate subjected to traction-free conditions is investigated in the frame of the Kelvin-Voight viscoelastic theory. The obtained three wave equations are decoupled into two groups, Lamb-like wave and SH wave. They are separately solved by the Legendre polynomial series approach. The availability of the method is confirmed through the comparison with the published data of the SH wave for a viscoelastic flat plate. The dispersion curves and attenuation curves for the carbon fiber and prepreg cylindrical plates are illustrated and the viscous effect on dispersion curves is shown. The influences of the ratio of radius to thickness are analyzed.

• Journal of the Korean Society of Safety
• /
• v.3 no.1
• /
• pp.21-29
• /
• 1988

Conventional pwm switching power supply have the disadvantage some aspects of size, light weight, noise and system stability. High frequency Series Resonant Converter (SRC), described in this paper, almost improve above disadvantages. We use the state plane technique as analysis method. This technique is powerful tool which can clearly analyze the peak stress of the state variables inside the converter, Here, we can define each operation mode from frequency ratio Fsn, switching frequency to resonant frequency, and we analyze the output performance in each operation mode. To verify the theoretical analysis, we compose the actual converter, and the experimental results are compared with analysis.

• Korean Journal of Mathematics
• /
• v.29 no.3
• /
• pp.483-492
• /
• 2021

This article concerns the property that for any element a in a ring, if a²ⁿ = aⁿ for some n ≥ 2 then a² = a. The class of rings with this property is large, but there also exist many kinds of rings without that, for example, rings of characteristic ≠2 and finite fields of characteristic ≥ 3. Rings with such a property is called reduced-over-idempotent. The study of reduced-over-idempotent rings is based on the fact that the characteristic is 2 and every nonzero non-identity element generates an infinite multiplicative semigroup without identity. It is proved that the reduced-over-idempotent property pass to polynomial rings, and we provide power series rings with a partial affirmative argument. It is also proved that every finitely generated subring of a locally finite reduced-over-idempotent ring is isomorphic to a finite direct product of copies of the prime field {0, 1}. A method to construct reduced-over-idempotent fields is also provided.