• Journal of the Korean Society for Railway
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• v.13 no.5
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• pp.504-508
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• 2010

The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO (Gate Turnoff Thyristor) technology. The IGBT combines the advantages of a power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) and a bipolar power transistor. The change of electrical characteristics for IGBT is mainly coming from the change of characteristics of MOSFET at the input gate and the PNP transistors at the output. The change of threshold voltage, which is one of the important design parameters, is brought by charge trapping at the gate oxide under the environment that radiation exists. The energy loss will be also studied as the inductance values are changed. In this paper, the electrical characteristics are simulated by SPICE, and compared for variation of inductance and threshold voltage based on IGBT.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.247.1-247.1
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• 2014

The capacitive coupled plasma is used widely in the semiconductor industries. Especially, the uniformity of the industrial plasma is heavily related with defect ratio of devices. Therefore, the industries need the capacitive coupled plasma source which can generate the uniform plasma and control the plasma's uniformity. To achieving the uniformity of the large area plasma, we designed multi-powered electrodes. We controlled the uniformity by controlling the power of each electrode. After this work, we started to research another concept of the plasma device. We make the plasma chamber that has multi-ground electrodes imaginary (CST microwave studio) and simulate the electric field. The shape of the multi-ground electrodes is ring type, and it is same as the shape of the multi-power electrodes that we researched before. The diameter of the side electrode's edge is 300mm. We assumed that the plasma uniformity is related with the impedance of ground electrodes. Therefore we simulated the imaginary chamber in three cases. First, we connected L (inductor) and C (capacitor) at the center of multi-ground electrodes. Second, we changed electric conductivity of multi-ground electrode. Third, we changed the insulator's thickness between the center ground electrode and the side ground electrode. The driving frequency is 2, 13.56 and 100 MHz. We switched our multi-powered electrode system to multi-ground electrode system. After switching, we measured the plasma uniformity after installing a variable vacuum capacitor at the ground line. We investigate the effect of ground electrodes' impedance to plasma uniformity.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1203-1204
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• 2006

Recently, utility network is getting more and more complicated and huge. In addition to, demands of power conversion devices which have non-linear switching devices are getting more and more increased. Consequently, according to the non-linear power semiconductor devices, current harmonics are unavoidable. Those current harmonics flow back to utility network and become one of the reasons which make the voltage distortion. On the other hands, voltage sag from sudden increasing loads is also one of the terrible problems inside of utility network. In order to compensate the current harmonics and voltage sag problem, AF(Active Filter) systems could be a good solution method and SMES(Superconducting Magnetic Energy Storage) system is a very good promising source due to the high response time of charge and discharge. Therefore, the combined system of AF and SMES is a wonderful device to compensate both harmonics current and voltage sag. However, unfortunately SMES needs a superconducting magnetic coil. Because of the introduction of superconducting magnetic coil, quench problem caused by unexpected reasons is always existed. In case of discharge operation, quench is a significantly harmful factor according as it decreases the energy capacity of SMES. Therefore, this paper presents a decision method of the specification of the AF-SMES system considering internal fault condition. Especially, authors analyzed the change of the original energy capacity of SMES regarding to the size of resistance caused by quench of superconducting magnetic coil. Finally, based on this simulation, authors manufactured actual Active Filter System using DSP.

• Journal of the Korean Society of Safety
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• v.27 no.3
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• pp.57-62
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• 2012

The purpose of this paper is to find dangerous factors of a water purifier when water leaks due to inappropriate use and analyze the patterns of damaged parts in order to provide data for the examination of the cause of the problem. If the water purifier is inspected and managed by a non-specialist, when the FLC(Float Level Controller) at the top is inclined, water leakage may occur to the water purifier. The leaked water flows onto the cables and hoses and enters the thermostat terminal, heater, PCB, power supply connection connector, etc., becoming a dangerous factor that may cause a system failure, fire, etc. Due to the water that entered the input terminal, low noise and white smoke were generated at first. However, the flame gradually propagated due to the continuous inflow of moisture. It was found that when moisture reached the PCB, a carbonized conductive path was formed at the varistor terminal, input terminal, semiconductor device terminal, etc., and the flame became larger, which might result in a fire. From the metal microscope analysis of a damaged condenser terminal, it was found that the amorphous structure unique to copper cable disappeared, and voids, boundary surface and disorderly fine particles occurred. Also, in the case of the connector into which moisture penetrated, fusion and deformation occurred at the cable connection clips. The result of analysis of the power supply cable connector using a thermal image camera showed that most of the heat was generated from the cable connection clips and the temperature at the connection center was normal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.523-524
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• 2007

This paper discusses the planarization process of thick copper film structure used for power supply device. Chemical mechanical polishing(CMP) has been used to remove a metal film and obtain a surface planarization which is essential for the semiconductor devices. For the thick metal removal, however, the long process time and other problems such as dishing, delamination and metal layer peeling are being issued, Compared to the traditional CMP process, Electro-chemical mechanical planarization(ECMP) is suggested to solve these problems. The two-step process composed of the ECMP and the conventional CMP is used for this experiment. The first step is the removal of several tens ${\mu}m$ of bulk copper on patterned wafer with ECMP process. The second step is the removal of residual copper layer aimed at a surface planarization. For more objective comparison, the traditional CMP was also performed. As an experimental result, total process time and process defects are extremely reduced by the two-step process.

• ETRI Journal
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• v.41 no.2
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• pp.254-261
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• 2019

Distinct from conventional energy-harvesting (EH) technologies, such as the use of photovoltaic, piezoelectric, and thermoelectric effects, betavoltaic energy conversion can consistently generate uniform electric power, independent of environmental variations, and provide a constant output of high DC voltage, even under conditions of ultra-low-power EH. It can also dramatically reduce the energy loss incurred in the processes of voltage boosting and regulation. This study realized betavoltaic cells comprised of p-i-n junctions based on silicon carbide, fabricated through a customized semiconductor recipe, and a Ni foil plated with a Ni-63 radioisotope. The betavoltaic energy converter (BEC) includes an array of 16 parallel-connected betavoltaic cells. Experimental results demonstrate that the series and parallel connections of two BECs result in an open-circuit voltage $V_{oc}$ of 3.06 V with a short-circuit current $I_{sc}$ of 48.5 nA, and a $V_{oc}$ of 1.50 V with an $I_{sc}$ of 92.6 nA, respectively. The capacitor charging efficiency in terms of the current generated from the two series-connected BECs was measured to be approximately 90.7%.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.12
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• pp.1618-1623
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• 2019

In this paper, inductive couplers realizing broadband powerline communication (PLC) are fabricated using Fe-based nanocrystalline alloy and their performance is analyzed. As a result of the field tests using the distribution automation system (DAS), the couplers achieve comparatively excellent data communication in the principal frequency band of broadband PLC although there is a difference in communication rate depending on the presence or absence of a branch. In addition, it has been confirmed that the communication speed is maintained for a real-time transmission even in a high current environment although there is a difference in the transmission rate depending on the distance. Hence, it is considered that the inductive couplers can be used as a core device to realize the intelligent power network by exploiting them for the monitoring and remote controlling of the power plant equipments for the DAS located in the inaccessible areas.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.1
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• pp.64-71
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• 2020

eFuse OTP memory IP is required to trim the analog circuit of the gate driving chip of the power semiconductor device. Conventional NMOS diode-type eFuse OTP memory cells have a small cell size, but require one more deep N-well (DNW) mask. In this paper, we propose a small PMOS-diode type eFuse OTP memory cell without the need for additional processing in the CMOS process. The proposed PMOS-diode type eFuse OTP memory cell is composed of a PMOS transistor formed in the N-WELL and an eFuse link, which is a memory element and uses a pn junction diode parasitic in the PMOS transistor. A core driving circuit for driving the array of PMOS diode-type eFuse memory cells is proposed, and the SPICE simulation results show that the proposed core circuit can be used to sense post-program resistance of 61㏀. The layout sizes of PMOS-diode type eFuse OTP memory cell and 512b eFuse OTP memory IP designed using 0.13㎛ BCD process are 3.475㎛ × 4.21㎛ (= 14.62975㎛2) and 119.315㎛ × 341.95㎛ (= 0.0408mm2), respectively. After testing at the wafer level, it was confirmed that it was normally programmed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1034-1046
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• 2013

In this paper, a design of a GaN HEMT power amplifier using output matching circuit with arbitrary harmonic impedances is presented. The adopted GaN HEMT device, TGF2023-02 of TriQuint Semiconductor, was packaged in commercial package. The optimal impedances of the GaN HEMT package are extracted from load-pull simulation at package input and output reference planes. The targets of load-pull simulation are the highest output power at fundamental frequency and the highest efficiency at $2^{nd}$ and $3^{rd}$ harmonic frequencies. Because of fixture in the package, the extracted impedances shows arbitrary harmonic impedances. In order to match the optimal impedances, output matchin circuit which has 4 transmission lines is presented. Characteristic impedances and electrical lengths of the transmission lines are mathmatically calculated. The power amplfiier with $54.6{\times}40mm^2$ shows the output power of 8 W at the fundamental frequency of 2.5 GHz, the efficiency above 55 %, and harmonic suppression of above 35 dBc at the $2^{nd}$ and the $3^{rd}$ harmonics.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.8
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• pp.28-34
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• 2000

Pyroelectric properties of the $Pb(Zr_{0.9}Ti_{0.1})O_3$ ceramics having the rhombohedral structure have been studied by using the dynamic measurement method. The pyroelectric responses of the $Pb(Zr_{0.9}Ti_{0.1})O_3$ ceramics are characterized in both low and high medulation frequency regions and their frequency depences are observed. In the low frequency region (2~200Hz), the change of polarization increases and shows the maximum since the reorientation rate of domains is higher than the modulation frequency. Inthe high frequency region (200~2000Hz), the pyroelectrci response decreases as the frequency increases, because the reorientation of domains is suppressed and so the change of polarization decreases. Pyroelectric coefficient, figure of merit, noise equivalent power and detectivity of the $Pb(Zr_{0.9}Ti_{0.1})O_3$ ceramics are measured as $1.6{\times}10^{-8}C/cm^2{\cdot},\;1.6{\times}10^{-11}C{\cdot}cm/J,\;2.4{\times}10^{-7}W/Hz^{1/2}\;and\;4.17{\times}10^6cm{\cdot}Hz^{1/2}/W$, respectively.