• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.491-491
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• 2011

Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.

• 반도체디스플레이기술학회지
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• 제15권1호
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• pp.65-69
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• 2016

We have investigated the possibility of recycling of an organic material that is wasted during thermal evaporation. To this end, we have collected a wasted organic material (N,N'-diphenly-N,N'-bis(1,1'-biphenyl)-4,4'-diamine(NPB)) from a vacuum chamber, purified it by recrystallization, and fabricated bilayer organic light-emitting diodes (OLEDs) with the recycled NPB. It is found that the surface roughness of thin films coated with the purified NPB is much enhanced. OLEDs fabricated by thermal evaporation of the purified NPB show lower device efficiency than OLEDs with the original NPB. However, the power efficiency of OLED fabricated by spin coating of the purified NPB is comparable with that of OLED with the original NPB. Therefore, such a recycling method by recrystallization would be more suitable for solution-processed OLEDs.

• 반도체디스플레이기술학회지
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• 제22권1호
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• pp.23-27
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• 2023

Organic light-emitting diode(OLED) is very thin organic films which are hundreds of nanometers. Unlike bottom-emission OLED(BEOLED), top-emission OLED(TEOLED) emits light out the front, opaque moisture absorbents or metal foils can't be used to prevent moisture and oxygen. And it is difficult to have flexible characteristics with glass encapsulation, so thin film encapsulation which can compensate for those two disadvantages is mainly used. In this study, Al₂O₃ thin films by atomic layer deposition(ALD) were examined by changing the argon gas purge flow rate and we applied this Al₂O₃ thin films to the encapsulation of TEOLED. Ag / ITO / N,N'-Di-[(1-naphthyl)-N,N'-diphenyl]-1,1'-biphenyl-4,4'-diamine / tris-(8-hydroxyquinoline) aluminum/ LiF / Mg:Ag (1:9) were used to fabricate OLED device. The characteristics such as brightness, current density, and power efficiency are compared. And it was confirmed that with a thickness of 40 nm Al₂O₃ thin film encapsulation process did not affect OLED properties. And it was enough to maintain a proper OLED operation for about 9 hours.

• 한국전기전자재료학회논문지
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• 제36권5호
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• pp.500-504
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• 2023

In this study, the heteroepitaxial thin film growth of β-Ga₂O₃ was studied according to the position of the susceptor in mist-CVD. The position of the susceptor and substrate was moved step by step from the center of the hot zone to the inlet of mist in the range of 0~50 mm. It was confirmed that the average thickness increased to 292 nm (D1), 521 nm (D2), and 580 nm (D3) as the position of the susceptor moved away from the center of the hot zone region. The thickness of the lower region of the substrate is increased compared to the upper region. The surface roughness of the lower region of the substrate also increased because the nucleation density increased due to the increase in the lifetime of the mist droplets and the increased mist density. Therefore, thin film growth of β-Ga₂O₃ in mist-CVD is performed by appropriately adjusting the position of the susceptor (or substrate) in consideration of the mist velocity, evaporation amount, and temperature difference with the substrate, thereby determining the crystallinity of the thin film, the thickness distribution, and the thickness of the thin film. Therefore, these results can provide insights for optimizing the mist-CVD process and producing high-quality β-Ga₂O₃ thin films for various optical and electronic applications.

• 전력전자학회논문지
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• 제7권3호
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• pp.253-261
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• 2002

본 논문에서는 TMS320F240 DSP를 통해 제어되는 디지털 히스테리시스 제어기를 사용한 Switched Reluctance Motor(SRM)의 위치제어시스템을 제안하였다. SRM은 구조가 간단하고 효율이 놀지만 전동기 구동 특성상 전력용 반도체 소자를 이용한 구동 시스템이 필수적이기 때문에 일반 전동기 제어시스템에 비해 전체 시스템의 제작비용이 증가하게 된다. 이러한 단점을 극복하고 SRM의 활용성을 높이기 위해서는 제어용 드라이브가 필수적으로 요구되는 서보시스템으로서와 SRM 제어시스템을 개발하는 것이다. 따라서 본 연구에서는 시스템 개발과 구현에 있어 아날로그 히스테리시스 제어기를 사용할 경우 하드웨어적인 방법에 의한 파라메타 수정 및 제작의 문제점을 해결하고 전체적인 시스템의 개발단가를 낮추기 위해 DSP내에서의 연산을 통해 제어되는 디지털 히스테리시스 제어기를 설계하여 SRM의 위치제어 시스템을 구현하였으며, 실헐을 통해 제어 및 응답특성을 고찰함으초써 서보 구동 시스템으로서의 SRM의 이용 가능성을 확인하였다.

• 한국진공학회지
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• 제21권3호
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• pp.121-129
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• 2012

진공을 기초로 한 극판 전력이 인가된 유도 결합 플라즈마 소스에 관한 대부분의 연구는 자기 바이어스 효과에만 한정되어 있으며, 다양한 반도체 및 디스플레이 식각 공정에서 공정 결과와 소자 품질에 결정적인 역할을 하는 플라즈마 변수들(전자 온도, 플라즈마 밀도)과 극판 전력의 상관관계에 대한 연구는 거의 없는 실정이다. 본 연구에서는 극판 전력이 플라즈마 변수에 미치는 영향에 관한 내용을 다루고 있으며, 최근의 연구 결과에 대한 리뷰를 포함하고 있다. 플라즈마 밀도는 극판 전력 인가에 의하여 감소 또는 증가하였으며, Fluid global model에 의한 결과와 잘 일치하는 경향을 보였다. 전자 온도는 RF 바이어스에 의하여 증가하였으며, 전자 에너지 분포 측정을 통하여 전자 가열 메커니즘을 관찰하였다. 또한, 플라즈마 밀도의 공간 분포는 극판 전력에 의하여 더욱 균일해짐을 알 수 있었다. 이러한 극판 전력과 플라즈마 변수들의 상관관계와 전자 가열 메커니즘에 대한 연구는 방전 특성의 물리적 이해뿐만 아니라, 반도체 식각 공정에서 소자 품질 및 공정 개선을 위한 최적의 방전조건 도출과 외부 변수 제어에 큰 도움을 주리라 예상된다.

• 한국항행학회논문지
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• 제19권5호
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• pp.433-439
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• 2015

최근 컴퓨터, 전기, 전자, 통신, 반도체 장비 등의 전기적 외란에 민감한 부하 설비의 사용이 증가함에 따라 전력 품질에 대한 관심이 높아지고 있다. 더 나아가서는 정밀 부하 장비들에 가장 빈번하게 발생하는 순간 전압 강하는 전력 품질 향상을 위해 적정한 보상이 필요하게 된다. 이를 위해 전기 이중층 커패시터 (EDLC : electric double layer capacitor)를 사용한 순간전압강하 보상장치가 개발되어 적용되고 있다. 본 논문에서는 순간전압강하 보상장치 (DVR : dynamic voltage restorer)에 사용되는 전기 이중층 커패시터(EDLC)에 비해 동일 사이즈 대비 에너지 밀도가 높은 하이브리드 커패시터 (hybrid capacitor)를 적용하는 연구를 하였고, 또한, 유도등의 비상 전원으로써 10년 이상의 수명을 보증할 수 있는 제품으로 하이브리드 커패시터 (hybrid capacitor)의 적용 가능성을 확인하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권3호
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• pp.154-161
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• 2006

This paper describes the new types of ngative differential resistance (NDR) IC applications which use a monolithic quantum-effect device technology based on the RTD/HBT heterostructure design. As a digital IC, a low-power/high-speed MOBILE (MOnostable-BIstable transition Logic Element)-based D-flip flop IC operating in a non-return-to-zero (NRZ) mode is proposed and developed. The fabricated NRZ MOBILE D-flip flop shows high speed operation up to 34 Gb/s which is the highest speed to our knowledge as a MOBILE NRZ D-flip flop, implemented by the RTD/HBT technology. As an analog IC, a 14.75 GHz RTD/HBT differential-mode voltage-controlled oscillator (VCO) with extremely low power consumption and good phase noise characteristics is designed and fabricated. The VCO shows the low dc power consumption of 0.62 mW and good F.O.M of -185 dBc/Hz. Moreover, a high-speed CML-type multi-functional logic, which operates different logic function such as inverter, NAND, NOR, AND and OR in a circuit, is proposed and designed. The operation of the proposed CML-type multi-functional logic gate is simulated up to 30 Gb/s. These results indicate the potential of the RTD based ICs for high speed digital/analog applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.408-408
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• 2012

It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of $O_2$ gas on the etching characteristics of FePt thin films were investigated. FePt thin films were etched using ICPRIE in $CH_4/O_2/Ar$ gas mix. The etch rate and the etch selectivity were investigated in various $O_2$ concentrations. The etch profiles were studied in varying etch parameters such as coil rf power, dc-bias voltage, and gas pressure. TiN was employed as a hard mask. For observation etch profiles, field emission scanning electron microscopy (FESEM) was used.

• 한국전자통신학회논문지
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• 제9권5호
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• pp.561-566
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• 2014

발광 반도체칩을 주재료로 하는 LED의 열 문제를 해결하기 위해 1개의 보드에 밀집형으로 배열한 COB(Chip on Board)에 관한 관심이 증가하고 있다. 고출력 COB LED의 경우, 소비전력이 높아 발생되는 열을 해결하기 위한 방열이 필수적이며 소자의 온도가 상승하면 효율적인 광 방출을 저해하게 되며 열적 스트레스에 따라 소자의 수명이 급격히 저하된다. 이러한 열적인 문제점을 해결하기 위해 본 논문에서는 13.5W급 COB LED와 형상이 다른 4 개의 방열판을 패키징하여 Solidworks Flow Simulation을 통한 열적 특성을 분석한 후, 가장 우수한 특성을 가진 방열판 형상을 실물로 제작하여 13.5W급 COB LED 다운라이트 소자와 결합시킨 다음, $1m^3$ 공간에서 접촉식 온도계와 비접촉식 온도계를 사용하여 LED 소자와 방열판 간의 열적 특성을 실물 실험을 통하여 분석 평가하였다.