• 제목/요약/키워드: Power devices

검색결과 4,689건 처리시간 0.035초

Electrical Modeling of Renewable Energy Sources and Energy Storage Devices

  • Williamson, Sheldon S.;Rimmalapudi, S.Chowdary;Emadi, Ali
    • Journal of Power Electronics
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    • 제4권2호
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    • pp.117-126
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    • 2004
  • This paper focuses on the electrical modeling techniques of renewable energy sources and storage devices such as batteries, fuel cells (FCs), photovoltaic (PVs) arrays, ultra-capacitors (UCs), and flywheel energy storage systems (FESS). All of these devices are being investigated recently for their typical storage and supply capabilities for various industrial applications. Hence, these devices must be modeled precisely taking into account the concerned practical issues. An obvious advantage of electrically modeling these renewable energy sources and storage devices is the fact that they can easily be simulated in real-time in any CAD simulation program. This paper reviews several types of suitable models for each of the above-mentioned devices and the most appropriate model amongst them is presented. Furthermore, a few important applications of these devices shall also be highlighted.

차세대 GaN RF 전력증폭 소자 및 집적회로 기술 동향 (Technical Trends in Next-Generation GaN RF Power Devices and Integrated Circuits)

  • 이상흥;임종원;강동민;백용순
    • 전자통신동향분석
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    • 제34권5호
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    • pp.71-80
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    • 2019
  • Gallium nitride (GaN) can be used in high-voltage, high-power-density/-power, and high-speed devices owing to its characteristics of wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. In this study, we investigate the technology trends for X-/Ku-band GaN RF power devices and MMIC power amplifiers, focusing on gate-length scaling, channel structure, and power density for GaN RF power devices and output power level and output power density for GaN MMIC power amplifiers. Additionally, we review the technology trends in gallium arsenide (GaAs) RF power devices and MMIC power amplifiers and analyze the technology trends in RF power devices and MMIC power amplifiers based on both GaAs and GaN. Furthermore, we discuss the current direction of national research by examining the national and international technology trends with respect to X-/Ku-band power devices and MMIC power amplifiers.

차세대 전력반도체 소자 및 패키지 접합 기술 (Recent Overview on Power Semiconductor Devices and Package Module Technology)

  • 김경호;좌성훈
    • 마이크로전자및패키징학회지
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    • 제26권3호
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    • pp.15-22
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    • 2019
  • In these days, importance of the power electronic devices and modules keeps increasing due to electric vehicles and energy saving requirements. However, current silicon-based power devices showed several limitations. Therefore, wide band gap (WBG) semiconductors such as SiC, GaN, and $Ga_2O_3$ have been developed to replace the silicon power devices. WBG devices show superior performances in terms of device operation in harsh environments such as higher temperatures, voltages and switching speed than silicon-based technology. In power devices, the reliability of the devices and module package is the critically important to guarantee the normal operation and lifetime of the devices. In this paper, we reviewed the recent trends of the power devices based on WBG semiconductors as well as expected future technology. We also presented an overview of the recent package module and fabrication technologies such as direct bonded copper and active metal brazing technology. In addition, the recent heat management technologies of the power modules, which should be improved due to the increased power density in high temperature environments, are described.

An Estimation Method for the Efficiency of Light-Emitting Diode (LED) Devices

  • Tao, Xuehui;Yang, Bin
    • Journal of Power Electronics
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    • 제16권2호
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    • pp.815-822
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    • 2016
  • The efficiency of light-emitting diode (LED) devices is a significant factor that reflects the capability of these devices to convert electrical power into optical power. In this study, a method for estimating the efficiency of LED devices is proposed. An efficiency model and a heat power model are established as convenient tools for LED performance evaluation. Such models can aid in the design of LED drivers and in the reliability evaluation of LED devices. The proposed estimation method for the efficiency and heat power of LED devices is verified by experimentally testing two types of commercial LED devices.

하드웨어 저전력 기능을 활용한 웨어러블 운영체제의 하이브리드 가버너 (Hybrid Governor for Wearable OS Using H/W Low-power Features)

  • 이성엽;김형신
    • 대한임베디드공학회논문지
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    • 제13권3호
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    • pp.117-124
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    • 2018
  • Wearable devices have become widespread. Fitness band is one of common wearable devices, providing useful functions. It helps users to monitor and collect their status such as heart rate and travel distance. Wearable devices, including fitness bands, are designed in small size and it ends up having small battery capacity. In that regard, it is necessary to expand the lifetime of wearable devices. Conventional power management scheme of wearable devices is based on DVFS Ondemand Governor and peripheral control by timeout event, such as turning off the LCD. In this paper, we propose a hybrid governor applying hardware supporting low power mode such as sleep mode to exploit the periodicity of fitness band task. In addition, we show hybrid governor outperforms in power consumption than conventional power management scheme of wearable devices based on Ondemand Governor through experiments.

물리적인 전력소자 모델을 이용한 직$\cdot$병렬운전 특성 해석 (Analysis of Series and Parallel Operation Characteristics using Physical Models of Power Devices)

  • 윤재학;박건태
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2002년도 추계학술대회 논문집
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    • pp.213-217
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    • 2002
  • Power devices for high power drivers that need high switching speed (IGCT, HVIGBT) have been continuously developed. However, serial and parallel connections using several much cheaper, lower power capacity of devices than an expensive high power device are very useful methods in the aspect of cost down and high power application. Even the current and voltage unbalance problem is occurred at each devices. This unbalance characteristics are mainly caused by the differences of physical characteristics of each devices and the line inductance (stray inductance) of bus bars that consist of current path. This paper deals simulation analysis of serial connection of IGCTs and parallel connection of IGCTs using physical model of devices. And also, introduces the method to reduce the voltage and current unbalance problem.

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Application of Lyapunov Theory and Fuzzy Logic to Control Shunt FACTS Devices for Enhancing Transient Stability in Multimachine System

  • Kumkratug, P.
    • Journal of Electrical Engineering and Technology
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    • 제7권5호
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    • pp.672-680
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    • 2012
  • This paper proposes the control strategy of the shunt Flexible AC Transmission System (FACTS) devices to improve transient stability in multimachine power system. The multimachine power system has high nonlinear response after severe disturbance. The concept of Lyapunov energy function is applied to derive nonlinear control strategy and it was found that the time derivative of line voltage is not only can apply to control the shunt FACTS devices in multimachine system but also is locally measurable signal. The fuzzy logic control is also applied to overcome the uncertainty of various disturbances in multimachine power system. This paper presents the method of investigating the effect of the shunt FACTS devices on transient stability improvement. The proposed control strategy and the method of simulation are tested on the new England power system. It was found that the shunt FACTS devices based on the proposed nonlinear control strategy can improve transient stability of multimachine power system.

FACTS기기의 유효전력 제어특성을 고려한 모선간 송전용량 평가 알고리즘 (An Algorithm for BITC Evaluation considering the Power Control Characteristics of FACTS Devices)

  • 윤용범;추진부
    • 대한전기학회논문지:전력기술부문A
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    • 제48권2호
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    • pp.113-118
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    • 1999
  • In this, sensitivity based approach to estimate BITC(bilateral interchange transfer capacity) considering the real power flow control function of FACTS devices is presented. The real power flow setting of the FACTS devices is adjusted so that it transfers the power flow from the first violation point of transmission capacity to other transmission lines in the power system, thus allowing more power to be transferred from the specified generator bus to the specified load bus. The transfer between the two bus locations is increased from this new operating condition until a violation of transmission capacity limits occurs or until the setting of the FACTS devices can no longer be adjusted. The proposed algorithm is illustrated using examples of small and real life power system.

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A study on 154kV protective relaying systems for HTS power devices application in Korea

  • Lee, Seung-Ryul;Yoon, Jae-Young;Lee, Byong-Jun
    • 한국초전도ㆍ저온공학회논문지
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    • 제9권4호
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    • pp.28-31
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    • 2007
  • This paper describes the consideration of 154kV protective relaying systems for applying HTS(High Temperature Superconducting) power devices to Korean power system. We investigates firstly 154kV relay systems of Korean power system and then do a basic study on the relay systems in the power system with superconducting devices. For the more detailed result, the study using EMTDC relay system modeling will be done from the viewpoint of superconducting devices application in the future.

전력용반도체 산업분석 및 시사점 (The Study of Industrial Trends in Power Semiconductor Industry)

  • 전황수
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2009년도 춘계학술대회
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    • pp.845-848
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    • 2009
  • 전력용반도체(Power Management IC)는 전력의 변환이나 제어용으로 최적화되어 있는 전력장치용 반도체 소자로서 전자기기에 들어오는 전력을 그 전자기기에 맞게 변경하는 역할을 하며, 일반 반도체에 비해서 고내압화, 큰 전류화, 고주파수화 되어 있다. 전력용반도체는 전기가 쓰이는 제품에는 다 들어가며, 자동차, 공업제품, 컴퓨터와 주변기기, 통신, 가전제품, 모바일 기술, 대체 에너지 등에 대한 수요 증가가 시장의 성장을 촉진한다. 전력용반도체 개발을 통해 대일무역적자 해소 기여, 취약한 비메모리 산업의 육성을 통한 반도체산업의 균형발전, 신성장동력 창출을 통한 미래 경제발전을 도모할 수 있다. 본 고에서는 반도체 부문의 미래 유망품목인 전력용반도체의 필요성 및 중요성, 시장현황 및 전망을 중심으로 살펴보고 결론에서 정책적 시사점을 도출하고자 한다.

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