• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.99.1-99.1
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• 2016

The materials for an electronic packaging provide diverse important functions including electrical contact to transfer signals from devices, isolation to protect from the environment and a path for heat conduction away from the devices. The packaging materials composed of metals, ceramics, polymers or combinations are crucial to the device operating properly and reliably. The demand of effective charge and heat transfer continuous to be challenge for the high-speed and high-power devices. Nanomaterials including graphene, carbon nanotube and boron nitride, have been designed for the purpose of exploiting the high thermal, electrical and mechanical properties by combining in the matrix of metal or polymer. In addition, considering the inherent electrical and surface properties of graphene, it is expected that graphene would be a good candidate for the surface layer of a template in the electroforming process. In this talk, I will present recent our on-going works in nanomaterials for microelectronic packaging: 1) porous graphene/Cu for heat dissipations, 2) carbon-metal composites for interconnects and 3) nanomaterials-epoxy composites as a thermal interface materials for electronic packaging.

• Electronics and Telecommunications Trends
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• v.39 no.3
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• pp.98-106
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• 2024

Advanced packaging is emerging as a core technology owing to the increasing demand for multifunctional and highly integrated semiconductors to achieve low power and high performance following digital transformation. It may allow to overcome current limitations of semiconductor process miniaturization and enables single packaging of individual devices. The introduction of advanced packaging facilitates the integration of various chips into one device, and it is emerging as a competitive edge in the industry with high added value, possibly replacing traditional packaging that focuses on electrical connections and the protection of semiconductor devices.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.17-24
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• 2020

As an interconnect scaling faces a technical bottleneck, the device stacking technologies have been developed for miniaturization, low cost and high performance. To manufacture a stacked device structure, a vertical interconnect becomes a key process to enable signal and power integrities. Most bonding materials used in stacked structures are currently solder or Cu pillar with Sn cap, but copper is emerging as the most important bonding material due to fine-pitch patternability and high electrical performance. Copper bonding has advantages such as CMOS compatible process, high electrical and thermal conductivities, and excellent mechanical integrity, but it has major disadvantages of high bonding temperature, quick oxidation, and planarization requirement. There are many copper bonding processes such as dielectric bonding, copper direct bonding, copper-oxide hybrid bonding, copper-polymer hybrid bonding, etc.. As copper bonding evolves, copper-oxide hybrid bonding is considered as the most promising bonding process for vertically stacked device structure. This paper reviews current research trends of copper bonding focusing on the key process of Cu-SiO₂ hybrid bonding.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.3-6
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• 2004

Power semiconductor devices are being compact, high performance and intelligent thanks to recent remarkable developments of silicon design, process and related packaging technologies. Developments of MOS-gate transistors such as MOSFET and IGBT are dominant thanks to their advantages on high speed operation. In conjunction with package technology, silicon technologies such as trench, charge balance and NPT will support future power semiconductors. In addition, wide band gap material such as SiC and GaN are being studies for next generation power semiconductor devices.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.29 no.3
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• pp.223-228
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• 2023

Sustainable energy supplies without the recharging and replacement of the charge storage device have become increasingly important. Among various energy harvesters, the triboelectric nanogenerator (TENG) has attracted considerable attention due to its high instantaneous output power, broad selection of available materials, eco-friendly and inexpensive fabrication process, and various working modes customized for target applications. In this study, the amount of voltage and current generated was measured by applying the PSD profile random vibration test of the electronic vibration tester and ISTA 3A according to the time of Anodized Aluminum Oxide (AAO) pore widening of the manufactured TENG device Teflon and AAO. The discharge and charging tests of the integrated module during the random simulated transport environment and the recognition distance of RFID were measured while agricultural products (onion) were loaded into the returnable folding plastic box. As a result, it was found that AAO alumina etching processing time to maximize TENG performance was optimal at 31 min in terms of voltage and current generation, and the integrated module applied with the TENG module showed a charging effect even during the continuous use of RFID, so the voltage was kept constant without discharge. In addition, the RFID recognition distance of the integrated module was measured as a maximum of 1.4 m. Therefore, it was found that the surface condition of AAO, a TENG element, has a great influence on the power generation of the integrated module, and due to the characteristics of TENG, the power generation increases as the surface dries, so it is judged that the power generation can be increased if the surface drying treatment (ozone treatment, etc.) of AAO is applied in the future.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.1-13
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• 2014

The paper gives an overview of the concepts, basic requirements, and trends regarding packaging technologies of power modules in hybrid (HEV) and electric vehicles (EV). Power electronics is gaining more and more importance in the automotive sector due to the slow but steady progress of introducing partially or even fully electric powered vehicles. The demands for power electronic devices and systems are manifold, and concerns besides aspects such as energy efficiency, cooling and costs especially robustness and lifetime issues. Higher operation temperatures and the current density increase of new IGBT (Insulated Gate Bipolar Transistor) generations make it more and more complicated to meet the quality requirements for power electronic modules. Especially the increasing heat dissipation inside the silicon (Si) leads to maximum operation temperatures of nearly $200^{\circ}C$. As a result new packaging technologies are needed to face the demands of power modules in the future. Wide-band gap (WBG) semiconductors such as silicon carbide (SiC) or gallium nitride (GaN) have the potential to considerably enhance the energy efficiency and to reduce the weight of power electronic systems in EVs due to their improved electrical and thermal properties in comparison to Si based solutions. In this paper, we will introduce various package materials, advanced packaging technologies, heat dissipation and thermal management of advanced power modules with extended reliability for EV applications. In addition, SiC and GaN based WBG power modules will be introduced.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.9-14
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• 2012

Robust power delivery and distribution are considered one of the major challenges in electronic devices today. As a technology develops (i.e. frequency and complexity, increase and size decreases), both power density and power supply noise increase, and voltage supply margin decreases. In addition, thermal problem is induced due to high power and poor power distribution. Until now most of studies to improve power delivery and distribution have been focused on device circuit or system architecture designs. Interconnect process technologies to resolve power delivery issues have not greatly been explored so far, but recently it becomes of great interest as power increases and voltage specification decreases in a smaller chip size.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.43-51
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• 2023

In this paper, we introduce the development trends of power devices which is the key component for power conversion system in electric vehicles, and discuss the characteristics of the next-generation wide-bandgap (WBG) power devices. We provide an overview of the characteristics of the present mainstream Si insulated gate bipolar transistor (IGBT) devices and technology roadmap of Si IGBT by different manufacturers. Next, recent progress and advantages of SiC metal-oxide-semiconductor field-effect transistor (MOSFET) which are the most important unipolar devices, is described compared with conventional Si IGBT. Furthermore, due to the limitations of the current GaN power device technology, the issues encountered in applying the power conversion module for electric vehicles were described.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.15-22
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• 2019

In these days, importance of the power electronic devices and modules keeps increasing due to electric vehicles and energy saving requirements. However, current silicon-based power devices showed several limitations. Therefore, wide band gap (WBG) semiconductors such as SiC, GaN, and $Ga_2O_3$ have been developed to replace the silicon power devices. WBG devices show superior performances in terms of device operation in harsh environments such as higher temperatures, voltages and switching speed than silicon-based technology. In power devices, the reliability of the devices and module package is the critically important to guarantee the normal operation and lifetime of the devices. In this paper, we reviewed the recent trends of the power devices based on WBG semiconductors as well as expected future technology. We also presented an overview of the recent package module and fabrication technologies such as direct bonded copper and active metal brazing technology. In addition, the recent heat management technologies of the power modules, which should be improved due to the increased power density in high temperature environments, are described.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.331-338
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• 2005

The rapid advances in high power light sources and arrays as encountered in incandescent lamps have induced dramatic increases in die heat flux and power consumption at all levels of high power LED packaging. The lifetime of such devices and device arrays is determined by their temperature and thermal transients controlled by the powering and cooling, because they are usually operated under rough environmental conditions. The reliability of packaged electronics strongly depends on the die attach quality, because any void or a small delamination may cause instant temperature increase in the die, leading sooner or later to failure in the operation. Die attach materials have a key role in the thermal management of high power LED packages by providing the low thermal resistance between the heat generating LED chips and the heat dissipating heat slug. In this paper, thermal transient characteristics of die attach in high power LED package have been studied based on the thermal transient analysis using the evaluation of the structure function of the heat flow path. With high power LED packages fabricated by die attach materials such as Ag paste, solder paste and Au/Sn eutectic bonding, we have demonstrated characteristics such as cross-section analysis, shear test and visual inspection after shear test of die attach and how to detect die attach failures and to measure thermal resistance values of die attach in high power LED package. From the structure function oi the thermal transient characteristics, we could know the result that die attach quality of Au/Sn eutectic bonding presented the thermal resistance of about 3.5K/W. It was much better than those of Ag paste and solder paste presented the thermal resistance of about 11.5${\~}$14.2K/W and 4.4${\~}$4.6K/W, respectively.