• Journal of electromagnetic engineering and science
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• 제16권1호
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• pp.44-51
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• 2016

A commercial $0.25{\mu}m$ GaN process is used to implement 6-18 GHz wideband power amplifier (PA) monolithic microwave integrated circuits (MMICs). GaN HEMTs are advantageous for enhancing RF power due to high breakdown voltages. However, the large-signal models provided by the foundry service cannot guarantee model accuracy up to frequencies close to their maximum oscillation frequency ($F_{max}$). Generally, the optimum output load point of a PA varies severely according to frequency, which creates difficulties in generating watt-level output power through the octave bandwidth. This study overcomes these issues by the development of in-house large-signal models that include a thermal model and by applying distributed L-C output load matching to reactive matched amplifiers. The proposed GaN PAs have successfully accomplished output power over 5 W through the octave bandwidth.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.221-224
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• 2005

This paper discribes the nonlinear distortion of a pHEMT power amplifier. In the paper, we have used some commercially available power amplifiers for analyzing the relationship between the $IMD_3$ and ACPR for wireless LAN. And the $IMD_3$ results using two-tone test have been compared with ACPR to satisfy the requited 802.11g standard ACPR value. Measurement result shows that $IMD_3$ of 20MHz tone-spacing need to be more than 18.45dBc for power amplifiers. The WCDMA signal is fed into the power amplifier, for analyzing relationship between the asymmetrical $IMD_3$ and ACLR. With measurement result, the asymmetrical $IMD_3$ characteristic has increased with the increase of two-tone spacing. $IMD_3$ measurement result with maximum 20MHz of the two-tone spacing, shows that the difference between $IMD_3(lower)$ and $IMD_3(upper)$ is about 7dB. And the measured ACLR shows 5dB difference at -4MHz and +4MHz offset from center frequency.

• 전자통신동향분석
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• 제37권5호
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• pp.11-21
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• 2022

GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.

• 전자공학회논문지A
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• 제32A권1호
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• pp.119-128
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• 1995

We report hybrid and passive mode-locking results of tilted-stripe AlGaAs semiconductor laser traveling wave amplifiers with saturable absorbers. Dependence ofthe pulse width on the mode locking frequency, the bandwidth of spectral filters, and the bias current of the laser amplifier are investigated. We generate 4 ps optical pulses by using the hybrid mode locking technique. The repetition rate and the peak power of generated pulses are 516 MHz and 170 mW, respectively. The tuning range of uor mode locked laser is 10 nm with the center wavelength of 780 nm. We also generate 2.6 ps optical pulses with peak power of 830 mW by using the passive mode locking technique.

• 한국광학회:학술대회논문집
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• 한국광학회 2009년도 창립 20주년기념 특별학술발표회
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• pp.343-344
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• 2009

Pump wavelength dependence of the gain spectra was investigated by simulating the model of single-pumped fiber optical parametric amplifiers (FOPAs). Conditions for the single-pumped FOPAs having broad bandwidths with relatively large gains were optimized and the gain bandwidth was found to be as large as 146.4 nm when signal power and pump power were 316 nW and 7 W, respectively.

• 센서학회지
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• 제33권1호
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• pp.12-17
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• 2024

Floating inverter amplifiers (FIAs) have recently garnered considerable attention owing to their high energy efficiency and inherent resilience to input common-mode voltages and process-voltage-temperature variations. Since the voltage gain of a simple FIA is low, it is typically cascaded or cascoded to achieve a higher voltage gain. However, cascading poses stability concerns in closed-loop applications, while cascoding limits the output swing. This study introduces a gain-enhanced FIA that features cross-coupled body biasing. Through simulations, it is demonstrated that the proposed FIA designed using a 28-nm complementary metal-oxide-semiconductor technology with a 1-V power supply can achieve a high voltage gain (> 90 dB) suitable for dynamic open-loop applications. The proposed FIA can also be used as a closed-loop amplifier by adjusting the amount of positive feedback due to the cross-coupled body biasing. The capability of achieving a high gain with minimum-length devices makes the proposed FIA a promising candidate for low-power, high-speed sensor interface systems.

• 한국정보통신학회논문지
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• 제6권5호
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• pp.724-730
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• 2002

디지털 통신시스템에서는 인접채널에 대한 간섭을 최대한 줄이기 위하여 필연적으로 선형 전력증폭기가 요구된다. 선형 전력증폭기는 매우 다양하며, 그 중에서도 전방제환 전력증폭기는 구조상 광 대역이면서 선형화 정도가 매우 우수하기 때문에 많이 이용된다. 전방궤환 전력증폭기는 지연 선로의 손실로 인하여 전체효율이 감소한다. 본 논문에서는 이러한 지연 선로를 손실이 매우 작은 지연 여파기를 사용함으로써 효율과 선형성을 동시에 개선하였다. 측정 결과, ACLR이 약 17.43(dB) 개선되었으며, 이것은 지연 여파기를 사용함으로써 3.44(dB) 더 개선되었음을 나타낸다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.637-640
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• 1998

A 35 ㎓ GaAs MMIC power amplifier was designed using a monolithic technology with AlGaAs/InGaAs/GaAs power PM-HEMTs, rectangualr spiral inductors and Si3N4 MIM capacitors. The GaAs power MESFETs in the input and output stages have total gate widths of 120 um and 320 um, respectively. Total S21 gain of 10.82dB and S11 of -16.26 dB were obtained from the designed MMIC power amplifier at 35 ㎓. And the chip size of the MMIC amplifier was 1.4$\times$0.8 $\textrm{mm}^2$

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(1)
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• pp.179-182
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• 2002

In this paper, 2-stage Power amplifier with external bias controller for\ulcorner IMT-2000 handsets was designed using SiGe HBT with excellent linearity to 1\ulcornereduce size and weight. The designed amplifier has 26.5 dBm output power, 33% power added efficiency, and 22 dB linear power gain in 1920-1980MHz frequency range.

• 한국전자파학회논문지
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• 제20권2호
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• pp.107-114
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• 2009

본 논문에서는 저출력에서의 효율을 높이기 위한 전력 증폭기 시스템과 이 시스템에 필요한 재구성성이 있는 전력 분배기를 제안한다. 저출력에서의 효율을 높이게 되면, 무선 통신용 선형 전력 증폭기의 평균 효율을 높일 수 있다. 제안한 전력 분배기는 출력의 크기에 따라 고출력 모드와 저출력 모드로 동작한다. 각 모드에서 신호의 경로가 재구성되고 임피던스 정합도 이루어진다. 이러한 재구성성이 있는 전력 분배기는 두 개의 $\lambda/4$ 결합 선로(coupled line)와 두 개의 스위치로 구성된다. 제작된 전력 분배기는 중심주파수 0.9 GHz에서 고출력 모드일 때 반사손실($S_{11}$)과 삽입손실($S_{21}$)이 각각 -16.49 dB와 -0.83 dB, 저출력 모드일 때 반사 손실($S_{11}$)과 삽입손실($S_{31}$)이 각각 -16.28 dB와 -0.73 dB였다. 이 결과를 통해 각 모드에서 신호의 경로가 재구성되며 임피던스 정합이 이루어지는 것을 확인하였다.