• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.278-291
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• 2008

For the semiconductor manufacturing processes, so many vacuum systems are needed with large power consumption for vacuum pumps. Semiconductor device manufacturing makers are concerned about the power consumption and have to address this because it is related with the environmental issues. So many solutions including the design and the control of them by vacuum pump manufacturers to reduce the power consumption of vacuum pump are proposed. However, how to use vacuum pumps by users and the conditions for vacuum pump to be used are also very important to reduce the power consumption. In this article, how to reduce the power consumption of vacuum pumps is explained briefly and what the impact of semiconductor technology trend on the power consumption is considered very briefly.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.9
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• pp.1013-1020
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• 1992

The conductivity variation of a high resistivity bulk silicon semiconductor, whose electrodes were deposited with aluminum vapor, was studied experimentally by measuring the X-ray intensity and current flow, which was developed by X-ray radiation while applying a pulse voltage to the silicon, in a load resistor connected to the semiconductor. The current flow observed immediately as the X-ray radiated, and when the X-ray decreased. It was found from the observation of switching current for the X-ray intensity and the voltage applied in the semiconductor that the switching current of the semiconductor increased as the intensity of the X-ray and the applied voltage increased. In case of lower applied voltage, the switching current for higher applied voltage depended on the intensity of the X-ray radiated due to the saturation of electron and hole.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.05a
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• pp.845-848
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• 2009

Power semiconductor devices are semiconductor devices used as switches or rectifiers in power electronics circuits. Theyare also caleed power devices or when used in integrated circuits, called power ICs. Some common power devices are the power diode, thyristor, power MOSFET and IGBT (insulated gate bipolar transistor). A power diode or MOSFET operates on similar principles to its low-power counterpart, but is able to carry a larger amount of current and typically is able to support a larger reverse-bias voltage in the off-state. Structural changes are often made in power devices to accommodate the higher current density, higher power dissipation and/or higher reverse breakdown voltage. The vast majority of the discrete (i.e non integrated) power devices are built using a vertical structure, whereas small-signal devices employ a lateral structure. With the vertical structure, the current rating of the device is proportional to its area, and the voltage blocking capability is achieved in the height of the die. With this structure, one of the connections of the device is located on the bottom of the semiconductor.

• Bulletin of the Korean Chemical Society
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• v.32 no.4
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• pp.1204-1208
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• 2011

Nanoscopic $Co_3O_4$ particles were prepared using avian egg membrane as a template at $800^{\circ}C$. The prepared materials were subjected to XRD, SEM, TEM and Raman spectroscopic studies. Cyclic voltammetry study shows a single step oxidation and reduction process. Electrochemical lithium insertion behavior of the materials was examined in coin cells of the 2032 configuration. The material showed a discharge capacity 600mAh/g even after 20 cycles.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.99.4-99
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• 1998

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.585-586
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• 2008

In this paper, a novel beta-multiplier reference current source circuit for the 800mV power-supply voltage is presented. In order to cope with the narrow input common-mode range of the OpAmp in the reference circuit, shunt resistive voltage divider branches were deployed. High gain OpAmp was designed to compensate intrinsic low output resistance of the MOS transistors. The proposed reference circuit was designed in a standard 0.18um CMOS process with nominal Vth of 420mV and -450mV for nMOS and pMOS transistor respectively. The total power consumption including OpAmp is less than 50uW.

• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.391-395
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• 2003

In this work, we have designed Gilbert cell downconversion mixer using 0.25um Anam CMOS process, we also have analyzed Conversion gain and IIP3 using Taylor series in our own unique way. Especially, bulk terminal is used as LO( Local Oscillator) input for reduction of power consumption and supply voltage. Supply voltage used in this design is lower than 1.8V and core current is less than 500uA. The simulation experiments showed that the conversion gain, IIP3, and power consumption were -1 dB, 4.46dBm, and 0.8mW, respectively.

• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.1119-1122
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• 2000

This paper describes on RF circuit simulation technique, especially on a RF modeling and a model extraction of a LDMOS(Lateral Diffused MOS) that has gate-width (Wg) dependence. Small-signal model parameters of the LDMOSs with various gate-widths extracted from S-parameter data are applied to make the relation between the RF performances and gate-width. It is proved that a source inductance (Ls) was not applicable to scaling rules. These extracted small-signal model parameters are also utilized to remove extrinsic elements in an extraction of a large-signal model (using HP Root MOSFET Model). Therefore, we can omit an additional measurement to extract extrinsic elements. When the large-signal model with Ls having the above gate-width dependence is applied to a high-power LDMOS module, the simulated performances (Output power, etc.) are in a good agreement with experimental results. It is proved that our extracted model and RF circuit simulation have a good accuracy.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.1
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• pp.27-34
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• 2017

Recently, a demand in sustainable green technologies is requiring the lead free bonding for high power module packaging due to the environmental pollution. The Transient-liquid phase (TLP) bonding can be a good alternative to a high Pb-bearing soldering. Basically, TLP bonding is known as the combination of soldering and diffusion bonding. Since the low melting temperature material is fully consumed after TLP bonding, the remelting temperature of joint layer becomes higher than the operating temperature of the power module. Also, TLP bonding is cost-effective process than metal nanopaste bonding such as Ag. In this paper, various TLP bonding techniques for power semiconductor were described.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.276-281
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• 2012

Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. Generally most of field effect concentrations shows on the edge of power devices. Can be improve the breakdown characteristic using edge termination technology. In this paper, considering the variables that affect the breakdown voltage and optimization of parameters result for 600 V Super Junction MOSFET Field ring.