• 반도체디스플레이기술학회지
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• 제23권2호
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• pp.100-106
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• 2024

To generate the plasma required in dry cleaning processes, the plasma chamber must be supplied with a high-quality AC voltage with a voltage of more than 1 kV and a frequency of 400 kHz. In the existing research, many methods to supply high power have been studied, but how to improve the quality of the power for high-quality plasma has been relatively little studied. In this paper, we propose a study to improve the quality of RF power circuit for high-quality plasma generation in dry cleaning method. Existing methods in the environment of full-bridge-based RF power circuits must perform PWM duty control in the light load region. This causes distortions in the waveform, resulting in poor power quality, which directly leads to poor plasma quality. To solve these problems, a half-bridge switching method is proposed and the improvement in waveform quality is verified. To verify the feasibility of the design and control algorithm proposed in this paper, an RF power circuit prototype is fabricated and the proposed design and control method is verified through simulation and actual experiments under dummy load.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 Proceedings ICPE 98 1998 International Conference on Power Electronics
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• pp.1003-1007
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• 1998

In recent years inverter power sources are more and more used for resistance welding processes. In this paper some results of investigation into the static and dynamic behavior of high-current rectifier diodes used in these inverter power sources will be discussed. By means of digital simulation, losses and efficiency have been determined depending on the power semiconductor parameters.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.271-271
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• 2012

Many studies have been investigated on high density plasma source (Electron Cyclotron Resonance, Inductively Coupled Plasma, Helicon plasma) for large area source after It is announced that productivity of plasma process depends on plasma density. In this presentation, we will propose the new concept of the multiple source, which consists of a parallel connection of ICP sources and helicon plasma sources. For plasma uniformity, equivalent power (especially, equivalent current in ICP & Helicon) should distribute on each source. We design power feeding line as coaxial transmission line with same length of ground line in each source for equivalent power distribution. And we confirm the equivalent power distribution with simulation and experimental result. Based on basic study, we develop the plasma source for oxidation in semiconductor process. we will discuss the relationship between the processing parameters (With or WithOut magnet, operating pressure, input power ). In ICP, plasma density uniformity is uniform. In ICP with magnet (or Helicon) plasma density is not uniform. As a result, new design (magnet arrangement and gas distributor and etc..) are needed for uniform plasma density in ICP with magnet and Helicon.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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• pp.301-303
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• 2001

In this paper we present a Capacitor Charging Power Supply (CCPS) using a series-resonant three-level inverter topology to improve voltage regulation and use semiconductor switches having low blocking voltage capability such as MOSFETs. This inverter can be operated with two modes, Full Power Mode (FPM) and Half Power Mode (HPM). In FPM inverter supplies the high frequency step up transformer with full DC-link voltage and in HPM with half DC-link voltage. HPM switching method will be adopted when CCPS output voltage reaches the preset target value and operates in refresh mode-charge is maintained on the capacitor. In this topology each semiconductor devices blocks a half of the DC-link voltage[2]. A 15kW, 30kV CCPS has been built and will be tested for an electric precipitator application. The CCPS operates from an input voltage of 500VDC and has a variable output voltage between 10 to 30kV and 1kHz repetition rate at 44nF capacitive load [3]. A resonant frequency of 67.9kHz was selected and a voltage regulation of $0.83\%$ has been achieved through the use of half power mode without using the forced cut off the switch current [1]. The theory of operation, circuit topology and test results are given.

• Journal of Power Electronics
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• 제9권3호
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• pp.464-471
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• 2009

This paper introduces a new Motion-$SPM^{TM}$ (Smart Power Modules) module in Single In-line Package (SIP), which is a fully optimized intelligent integrated IGBT inverter module for up to 1kW low power motor drive applications. This module offers a sophisticated, integrated solution and tremendous design flexibility. It also takes advantage of pliability for the arrangement of heat-sink due to two types of lead forms. It comes to be realized by employing non-punch-through (NPT) IGBT with a fast recovery diode and highly integrated building block, which features built-in HVICs and a gate driver that offers more simplicity and compactness leading to reduced costs and high reliability of the entire system. This module also provides technical advantages such as the optimized cost effective thermal performances through IMS (Insulated Metal Substrate), the high latch immunity. This paper provides an overall description of the Motion-$SPM^{TM}$ in SIP as well as actual application issues such as electrical characteristics, thermal performance, circuit configurations and power ratings.

• 한국시뮬레이션학회논문지
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• 제4권2호
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• pp.41-60
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• 1995

The IGBT(Insulated Gate Bipolar Transistor) is a power semiconductor device that has gained acceptance among circuit design engineers for motor drive and power converter applications. IGBT devices(International Rectifier, Proposed proposed model etc) have the best features of both power MOSFETs and power bipolar transistors, i.e., efficient voltage gate drive requirememts and high current density capability. When designing circuit and systems that utilize IGBTs or other power semiconductor devices, circuit simulations are needed to examine how the devices affect the behavior of the circuit. The interaction of the IGBT with the load circuit can be described using the device model and the state equation of the load circuit. The voltage rise rate at turn-off for inductive loads varies significantly for IGBTs with different base life times, and this rate of rise is important in determing the voltage overshoot for a given series resistor-inductor load circuit. Excessive voltage overshoot is potentially destructive, so a snubber protection circuit may be required. The protection circuit requirements are unique for the IGBT and can be examined using the model. The IGBT model in this paper is verified by comparing the results of the model with experimented results for various circuit operating conditions. The model performs well and describes experimented results accurately for the range of static and dynamic condition in which the device is intended to be operated.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권4호
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• pp.524-533
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• 2017

This paper presents a novel reset scheme for mm-scale sensing systems with stringent volume and area constraints. In such systems, multi-layer structure is required to maximize the silicon area per volume and minimize the system size. The multi-layer structure requires wirebonding connections for power delivery and communication among layers, but the area overhead for wirebonding pads can be significant. The proposed reset scheme exploits already existing power wires and thus does not require additional wires for system-wide reset operation. To implement the proposed reset scheme, a power management unit is designed to impose reset condition, and a reset detector is designed to interpret the reset condition indicated by the power wires. The reset detector uses a coupling capacitor for the initial power-up and a feedback path to hold the developed supply voltage. The prototype reset detector is fabricated in a $180-{\mu}m$ CMOS process, and the measurement results with the prototype mm-scale system confirmed robust reset operation over a wide range of temperatures and voltages.

• Journal of Advanced Marine Engineering and Technology
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• 제30권8호
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• pp.901-906
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• 2006

In this paper, the power amplifier using active bias circuits for LDMOS(Lateral Diffused Metal Oxide Semiconductor) MRF-21180 is designed and fabricated. According to change the temperature, the gate voltage of LDMOS is controlled by the fabricated active bias circuits which is made of PNP transistor to suppress drain current. The driving amplifier using MRF-21125 and MRF-21060 is made to drive the LDMOS MRF-21180 power amplifier. The variation of current consumption in the fabricated 60 watt power amplifier has an excellent characteristics of less than 0.1 A, whereas a passive biasing circuit dissipates more than 0.5 A. The implemented power amplifier has the gain over 9 dB, the gain flatness of less than $\pm$0.1 dB and input and output return loss of less than -6 dB over the frequency range 2.11 $\sim$ 2.17 GHz. The DC operation point of this power amplifier at temperature variation 0 $^{\circ}C$ to 60 $^{\circ}C$ is fixed by active bias circuit.

• 한국철도학회논문집
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• 제14권5호
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• pp.411-415
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• 2011

DC/DC컨버터는 임의의 직류전원을 부하가 요구하는 형태의 직류전원으로 변환시키는 전력변환기이다. 전압모드 DC/DC 컨버터는 주기적으로 입력측에서 출력측으로 전달되는 에너지를 제어하는 기능을 수행하기 위해 MOSFET(산화물-반도체 전계 효과 트랜지스터), 인덕터, PWM 제어기(오실레이터, 연산증폭기, 비교기로 구성)를 이용한다. 본 논문에서 PWM(펄스폭 변조) 모듈과 스위칭모드로 제어하는 기본적인 승압과 강압컨버터를 연구하고, 전기적 특성을 SPICE로 시뮬레이션을 수행하며, 전력의 효율을 각 소자의 변화와 사양에 따라 분석하는데 있다.

• 동력기계공학회지
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• 제4권1호
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• pp.45-50
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• 2000

Circuit breakers have traditionally employed mechanical methods to interrupt excessive currents. According to power semiconductor technology advances in power electronic device, some mechanical breakers are replaced with solid state equivalents. Advantages of the contactors using semiconductor devices include faster fault interrupting, fault current limiting, no arc to contain or extinguish and intelligent power control, and high reliability. This paper describes the design of a static $100{\pm}10%V$ and 0 to 50A DC self-protected contactor with 85A "magnetic tripping" and 100A interruption current at $2.2A/{\mu}s$ short circuit of load condition using a new power device the HARRIS MCT (600V-75A). The self-protection circuit of this system is designed by the classical ZnO varistor for energy absorption and turn-off snubber circuit ("C" or "RCD") of the MCT.