• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.43-48
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• 2020

The demand for stable plasma has been on the rise because of the increased delivery power amount in the chamber for improving productivity, and fast and accurate plasma impedance matching become a crucial performance measure for radio frequency (RF) power system in semiconductor manufacturing equipment. In this paper, the overall impedance matching was understood, and voltage and current values were extracted with voltage - current (VI) probe to measure plasma impedance in real-time. Actual matching data were analyzed to derive calibration coefficient for V and I measurements to understand the characteristics of VI probe, and we demonstrated the tendency of RF impedance matching according to changes in load impedance. This preliminary empirical research can contribute to fast RF matching as well as advanced equipment control for the next level of detailed investigation on embedded system based-RF matching controller.

• Journal of the Semiconductor & Display Technology
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• v.13 no.4
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• pp.43-48
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• 2014

Two-level inverter has some disadvantages like high harmonics contained in the output current, efficiency limit and stress to switching device as IGBT and FET. Many researches have reported multi-level inverter to complement two-level inverter of problems. In this paper, we suggest MPPT algorithm of multi-string three-level solar inverter that considered nowadays. We added midpoint controller in order to implement the MPPT algorithm because the three-level inverter has to need midpoint controller and procured the stability of direct current link. We verify the superiority of multi-string T-Type inverter and the algorithm we suggested with solar irradiance variation experiment and MPPT efficiency measurement. The MPPT efficiency was confirmed with a high efficiency more than 99.97%.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.118-123
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• 2023

Partially magnetized capacitively coupled plasma (CCP) sources are investigated using a two-dimensional kinetic simulation code named EDIPIC-2D. A converging numerical solution was obtained for CCP with a 60 MHz power source, while properly capturing the dynamics of electrons and power absorption over a single RF period. The effects of magnetic fields with different orientations were evaluated. Axial magnetic fields caused changes in the spatial distribution of plasma density, affecting the loss channel. Transverse magnetic fields enhanced stochastic heating near the powered electrode, leading to an increase in plasma density while the significant E×B drift loss compensated for this rise.

• Journal of the Ergonomics Society of Korea
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• v.30 no.1
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• pp.117-125
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• 2011

While human error happens repeatedly in the semiconductor industry in Korea, which has brought a tremendous loss from manpower, welfare etc., there are limitations to human error prevention activities. When a semiconductor company introduces new machines and facilities from Japan or Germany, the companies often do not consider human factors in the design. Also, semiconductor companies are so occupied with promoting increased productivity, their attention to human errors has been pushed aside. Negative aspects of technical exchange associated with safety management are one aspect of the industry's nature. A semiconductor company recently began acknowledging on the back of TQM(Total Quality Management) that human error has a decisive effect on the safety. There are a number of uncontrollable and hard to handle event sets because the nature of these events with a human error may often be threatened or very intensive. It is strongly required that systemic studies should be performed to grasp the whole picture of a current situation for hazard factors. This study aims to examine the human error approach through the case of human error prevention field activities in a semiconductor industry compared with the activities and experience in nuclear power plants.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.187-187
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• 2007

This paper presents the electrical properties of SiGe HBTs designed with bottom collector and single metal layer structure for RF power amplifier. Base layer was formed with graded-SiGe/Si structures and the collector place to the bottom of the device. Bottom collector and single metal layer structures could significantly simplify the fabrication process. We studied about the influence of SiGe base thickness, number of emitter fingers and temperature dependence (< $200^{\circ}C$) on electrical properties. The feasible application in 1~2GHz frequency from measured data $BV_{CEO}$ ~10V, $f_r$~14 GHz, ${\beta\simeq}110$, NF~1 dB using packaged SiGe HBTs. We will discuss the temperature dependent current flow through the e-b, b-c junctions to understand stability and performance of the device.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.253.1-253.1
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• 2007

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.4
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• pp.216-224
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• 2009

The endless scaling down of the semiconductor process made the impact of the power network noise on the performance of the state-of-the-art chip a serious design problem. This paper compares the performances of two popular circuit reduction approaches used to improve the efficiency of power network noise analysis: moment matching-based model order reduction (MOR) and node elimination-based MOR. As the benchmarks, we chose PRIMA and R2Power as the matching-based MOR and the node elimination-based MOR. Experimental results indicate that the accuracy, efficiency, and memory requirement of both methods very strongly depend on the structure of the given circuit, i.e., numbers of the nodes and sources, and the number of moments to preserve for PRIMA. PRIMA has higher accuracy in general, while the error of R2Power is also in the acceptable range. On the other hand, PRIMA has the higher efficiency than R2Power, only when the numbers of nodes and sources are small enough. Otherwise, R2Power clearly outperforms PRIMA in efficiency. In the memory requirement, the memory size of PRIMA increases very quickly as the numbers of nodes, sources, and preserved moments increase.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.15-22
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• 2019

In these days, importance of the power electronic devices and modules keeps increasing due to electric vehicles and energy saving requirements. However, current silicon-based power devices showed several limitations. Therefore, wide band gap (WBG) semiconductors such as SiC, GaN, and $Ga_2O_3$ have been developed to replace the silicon power devices. WBG devices show superior performances in terms of device operation in harsh environments such as higher temperatures, voltages and switching speed than silicon-based technology. In power devices, the reliability of the devices and module package is the critically important to guarantee the normal operation and lifetime of the devices. In this paper, we reviewed the recent trends of the power devices based on WBG semiconductors as well as expected future technology. We also presented an overview of the recent package module and fabrication technologies such as direct bonded copper and active metal brazing technology. In addition, the recent heat management technologies of the power modules, which should be improved due to the increased power density in high temperature environments, are described.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.2
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• pp.20-27
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• 2011

A CMOS Image Sensor(CIS) mounted on mobile appliances always needs a low power consumption because of the battery life cycle. In this paper, we propose novel power reduction techniques such as a data flip-flop circuit with leakage current elimination, a low power single slope A/D converter with a novel comparator, and etc. Based on 0.13um CMOS process, the chip satisfies QVGA resolution($320{\times}240$ pixels) whose pitch is 2.25um and whose structure is 4-Tr active pixel sensor. From the experimental results, the ADC in the middle of CIS has a 10-b resolution, the operating speed of CIS is 16 frame/s, and the power dissipation is 25mW at 3.3V(Analog)/1.8V(Digital) power supply. When we compare the proposed CIS with conventional ones, the power consumption is reduced approximately by 22% in sleep mode, 20% in operating mode.

• Journal of Power Electronics
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• v.12 no.1
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• pp.19-23
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• 2012

This paper presents a practical methodology for realistic simulation on reverse characteristics of Wide Bandgap (WBG) SiC and GaN p-n junctions. The adjustment on certain physic-based model parameters, such as the trap density and photo-generation for SiC junction, and impact ionization coefficients and critical field for GaN junction are described. The adjusted parameters were used in Synopsys Medici simulation to obtain a realistic p-n junction avalanche breakdown voltage. The simulation results were verified through benchmarking against independent data reported by others.